CN202610382U - Seed crystal holder for preparation of monocrystalline silicon by czochralski technique - Google Patents
Seed crystal holder for preparation of monocrystalline silicon by czochralski technique Download PDFInfo
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- CN202610382U CN202610382U CN 201220198929 CN201220198929U CN202610382U CN 202610382 U CN202610382 U CN 202610382U CN 201220198929 CN201220198929 CN 201220198929 CN 201220198929 U CN201220198929 U CN 201220198929U CN 202610382 U CN202610382 U CN 202610382U
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Abstract
The utility model discloses a seed crystal holder for preparation of monocrystalline silicon by a czochralski technique. The seed crystal holder comprises a holder, wherein a seed crystal shaft linking device is arranged above the holder. The seed crystal holder is characterized in that a cavity which is through up and down is formed in the holder; a silicon seed crystal clamping opening is formed under the cavity; at least one location pinhole is formed in a side wall of the holder and sequentially penetrates through the side wall of the holder, the cavity and the right side wall of the holder; a location pin which corresponds to the location pinhole in shape is arranged in the location pinhole and sequentially penetrates through the location pinhole on the left side of the holder, the cavity and the location pinhole on the right side of the holder; and a location pin fixer is arranged on an external side wall of the holder to fix the location pin and the holder.
Description
Technical field
The utility model relates to a kind of seedholder that vertical pulling method prepares silicon single crystal that is used for.
Background technology
Silicon single-crystal is mainly used in photovoltaic and semiconductor applications as a kind of semiconductor material.Most semiconductor silicon single crystal adopts the manufacturing of CZ (Czochralski) vertical pulling method.Make in the silicon single-crystal process in vertical pulling method, silicon crystal is grown in the growth room, and the growth room comprises stainless steel cylinder, insulation inner core, insulation urceolus, graphite heater, quartz crucible, plumbago crucible etc.; In the growth room with the rare gas element argon gas as shielding gas, generally adopt following method of manufacture: high-purity polycrystalline is packed in the quartz crucible into heat fused; Then, will melt silicon and slightly do cooling, give certain condensate depression; The silicon single crystal (being called silicon seed) of a particular crystal orientation is packed in the clamper, and the upper end of clamper is connected with seed shaft through connecting parts, and silicon seed is fixed in the clamper lower end; Clamper is rotated under the drive of seed shaft; And make quartz crucible reverse rotation under the drive of graphite axis, silicon seed is slowly descended, and contact with silicon melt; Upwards promote silicon seed with certain speed then, the purpose of this process mainly is to eliminate the dislocation defects that forms because of thermal shocking in the silicon seed.When treating that silicon seed rises to certain-length, temperature and the pulling speed that silicon seed makes progress through the adjustment melt are grown up silicon seed, when crystalline diameter during near aimed dia, improve pulling speed, make single crystal be close to equal diameter and grow.In the last stage of process of growth, the silicon melt residue in the quartz crucible improves the crystalline pulling speed not for a long time; Suitably increase the power of heating simultaneously; Crystal is dwindled gradually, thereby form a tail shape centrum, when sharp enough hour of centrum; Crystal will break away from melt, thereby accomplishes the crystalline process of growth.
In the czochralski silicon monocrystal manufacturing processed, need a kind of silicon single crystal that particular crystal orientation is arranged, be commonly referred to seed crystal.It is by the cutting of the silicon single-crystal in certain crystal orientation or drills through and form.Crystal orientation commonly used is < 111 >, < 100 >, < 110>etc.Seed crystal is generally right cylinder or rectangular parallelepiped, is fixed on one and is called in the workpiece of seedholder, is held device and drives rotary lifting together.
In the czochralski silicon monocrystal manufacturing processed; Seedholder is essential parts; Silicon seed need be fixed in the seedholder well; Guarantee that seed crystal can not become flexible even come off in rotary lifting seed crystal process, the silicon monocrystal growth process is accomplished smoothly, so the structure of seedholder lower end will match with the shape of the silicon seed of clamping.In general, seedholder is processed by metal molybdenum material or graphite, and the connecting parts that connects with seed shaft is arranged on it, and the seedholder lower end can be used for fixedly silicon seed, and its shape basis is different and different with the shape of the silicon seed of clamping.
The silicon monocrystal growth deviation in driction is specified single crystal orientation, is called the crystal orientation and departs from, and the degree that departs from is called the crystal orientation degree of bias.At first, the profile of crystal orientation degree of bias affects vertical pulling dislocation-free monocrystalline silicon makes the crystal out of roundness increase, thereby increases the excess loss of crystal barreling; Secondly, need adjust the crystal orientation degree of bias to reach the crystal orientation requirement of silicon chip, the profile and the yield rate of the crystal orientation degree of bias affects silicon chip during the online cutting of silicon wafer ingot; At last, the crystal orientation depart to silicon single-crystal radially resistivity evenness very important influence is arranged.Therefore, the location of seed crystal is very important for the silicon single-crystal of growing high-quality.Our common seedholder has three kinds at present, respectively as follows:
The silicon seed that 1, a kind of rectangular parallelepiped is arranged; Upper end one side has a plurality of breach, and there is the cylinder of a vertical breach its seedholder lower end, and shape matches with the rectangular parallelepiped seed crystal; Silicon seed partly is embedded in the lower end of clamper; With the metal molybdenum filament the two is fixed together, molybdenum filament just in time gets in the breach of silicon seed, plays the fixedly effect of seed crystal.When this kind clamper was used to make the high weight crystal of major diameter, the gap portions at seed crystal ruptured easily, reduced the access times of seed crystal, the increase cost.Simultaneously, after repeatedly using, cause molybdenum filament loosening easily, influence the location of seed crystal because metal molybdenum is different with the coefficient of expansion of silicon, when serious in addition the generation seed crystal come off, grow and quality thereby influence crystalline.
What 2, use at present was the widest is a kind of right cylinder seed crystal; A cylindrical side has groove, and the right cylinder that is shaped as hollow of seedholder lower end wherein also has the hole with the identical size of metal molybdenum pin; Pack into the from lower to upper lower end of clamper of right cylinder silicon seed; The groove of silicon seed is relative with the clamper lateral orifices, and the molybdenum pin inserts in the hole, and plays the fixedly effect of silicon seed.Only fixed by steady brace between this kind clamper and the silicon seed, cause bearing accuracy low easily, the crystal orientation degree of bias is big, thereby influences the quality of crystalline growth.Behind long crystalline substance repeatedly, seed crystal also easily in the fracture of porose place, causes preparing procedure failure.
3, domestic utility model patent 02131185.4 (day for announcing 2005.05.04) has been reported a kind of used silicon seed clamper of Grown by CZ Method silicon single crystal that is used for; Clamper contains the cavity of a up big and down small and up/down perforation; Cavity shape satisfies the requirement of silicon seed shape; Silicon seed can inlay card in clamper, to bear the weight of the silicon single-crystal of constantly growing up.This seedholder can guarantee the safe handling of silicon seed, avoids silicon seed fracture, prolongs the work-ing life of seed crystal greatly, the silicon single-crystal of can be used to grow big volume, high weight.But, in the vertical pulling method crystal growing process, seed crystal and crucible opposite spin; The speed of rotation of common seed crystal is 2 ~ 4 times of crucible speed of rotation, and seed crystal can produce a centrifugal inertial force under high speed rotating, and seed crystal only relies on chamfered edge platform or rounding table top inlay card at the seedholder internal fixing; On the clamper none downwards and horizontal power fix; Under action of centrifugal force, cause seed crystal loosening easily, especially when there was error in the size adaptation of seed crystal and seedholder, loosening meeting was easier; More severe, can have a strong impact on the stability of crystal growth and the quality of monocrystalline.
The utility model content
The technical problem that the utility model will solve provides a kind of seedholder that vertical pulling method prepares silicon single crystal that is used for of the silicon crystal that can prepare major diameter and high weight.
In order to solve the problems of the technologies described above, the utility model provides a kind of seedholder that vertical pulling method prepares silicon single crystal that is used for, and comprises clamper, above said clamper, is provided with the seed shaft coupling unit; Be provided with the cavity of up/down perforation in the said clamper, said cavity below is provided with the silicon seed clamp port; The sidewall of said clamper is provided with the dowel hole of at least one, and said dowel hole runs through the right side wall of left side wall, cavity and the clamper of clamper successively; Correspond to the shape of dowel hole, in dowel hole, be provided with steady brace, said steady brace runs through the dowel hole on dowel hole, cavity and the clamper right side in clamper left side successively; The outer side wall of said clamper is provided with the steady brace fixer, and said steady brace fixer is fixed steady brace and clamper.
As the improvement that vertical pulling method prepares the seedholder of silicon single crystal that is used for to the utility model: the section of said dowel hole is a right-angled trapezium, and the oblique waist of said right-angled trapezium and the angle θ of right angle waist are 0 ° ~ 90 °.
As the further improvement that vertical pulling method prepares the seedholder of silicon single crystal that is used for to the utility model: the section of said dowel hole is a rectangle.
As the further improvement that vertical pulling method prepares the seedholder of silicon single crystal that is used for to the utility model: the side of said silicon seed clamp port is 10 ° ~ 30 ° with the angle of axle.
As the further improvement that vertical pulling method prepares the seedholder of silicon single crystal that is used for to the utility model: the side of said silicon seed clamp port is 15 ° with the angle of axle.
As the further improvement that vertical pulling method prepares the seedholder of silicon single crystal that is used for to the utility model: the cross section of dowel hole is rectangle, circle or Polygons.
Be used for the method for use that vertical pulling method prepares the seedholder of silicon single crystal, silicon seed comprises silicon seed top, silicon seed middle part and silicon seed bottom, on silicon seed top, corresponds to dowel hole the silicon seed clamping hole is set; Silicon seed top is overlapped in the cavity of packing into, and the silicon seed clamp port is blocked at the silicon seed middle part, and expose below the silicon seed clamp port silicon seed bottom; Said steady brace is successively through tightening behind dowel hole left side, silicon seed clamping hole and the dowel hole right side; Through the steady brace fixer steady brace and clamper are fixed again; After fixing silicon seed, the seed shaft in the single crystal growing furnace of clamper and vertical pulling method manufacturing silicon single-crystal is connected through the seed shaft coupling unit.
The utility model be used for seedholder that vertical pulling method prepares silicon single crystal in use, can be fixing silicon seed from top to bottom, also can be fixing silicon seed from top to bottom.
If adopt from top to bottom fixedly silicon seed owing to used steady brace that silicon seed is fixed on the clamper, the clamper lower end then adopted side with spool angle be 15 ° rounding platform; Guarantee that silicon seed is under the high speed rotation; Receive downward power, and be that silicon seed can be under the effect that receives gravity on 15 ° the rounding platform in the angle of side and axle; Along 15 ° the automatic correction position of rounding table top, the deviation control of guaranteeing silicon seed is in certain scope.
If adopt from top to bottom fixedly silicon seed, from directly silicon seed being inserted the clamper convenience of ten minutes down; And owing to used steady brace that silicon seed is fixed on the clamper; It is 15 ° round platform that the angle of side and axle has then been adopted in the clamper lower end, guarantees silicon seed when inserting clamper, and the orientation is correct; And at silicon seed under high speed rotation; After receiving power, can be adjustment automatically on 15 ° the round table surface in the angle of side and axle, the deviation control of guaranteeing silicon seed be in certain scope.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is done further explain.
Fig. 1 is used for the primary structure synoptic diagram that vertical pulling method prepares the seedholder of silicon single crystal among the embodiment 1 of the utility model;
The structural representation of Fig. 2 when to be that Fig. 1 is actual use;
Fig. 3 is used for the primary structure synoptic diagram that vertical pulling method prepares the seedholder of silicon single crystal among the embodiment 2 of the utility model;
The structural representation of Fig. 4 when to be that Fig. 3 is actual use;
Fig. 5 is used for the primary structure synoptic diagram that vertical pulling method prepares the seedholder of silicon single crystal among the embodiment 3 of the utility model;
The structural representation of Fig. 6 when to be that Fig. 5 is actual use;
Fig. 7 is the embodiment 1 of utility model and the structural representation of the silicon seed 3 among the embodiment 3;
Fig. 8 is the structural representation of the silicon seed 3 among the embodiment 2 of utility model.
Embodiment
Embodiment 1, Fig. 1 have provided a kind of seedholder that vertical pulling method prepares silicon single crystal that is used for; Comprise clamper 1, the material that clamper 1 adopts is metal molybdenum or graphite; Be fixed with seed shaft coupling unit 11 in the upper end of clamper 1; Seed shaft coupling unit 11 for single crystal growing furnace in the connecting parts that is connected of seed shaft (seed shaft coupling unit 11 for the connecting parts that is threaded or the connecting parts of pin connection), seed shaft coupling unit 11 is a known technology.
In clamper 1, be provided with the cavity 23 of up/down perforation; Cavity 23 is that (cavity 23 can be the cavity of prism or cylindrical shape for the cavity of cylindrical shape; Be the cavity of cylindrical shape among the figure of the utility model), cavity 23 belows are provided with silicon seed clamp port 22, and silicon seed clamp port 22 is that (silicon seed clamp port 22 can be terrace with edge, chamfered edge platform, round platform or reverse frustoconic shape to the reverse frustoconic shape; Fig. 1, Fig. 2, Fig. 5 and Fig. 6 are the reverse frustoconic shape, and Fig. 4 and Fig. 5 are truncated conical shape).
The limit number of above-described prism, terrace with edge or chamfered edge platform is 3 ~ 12 and is (in the utility model, the limit number is 4) well.The side of above-described terrace with edge, chamfered edge platform, round platform or rounding platform is 15 ° with the angle of axle.
Have the dowel hole 24 of at least one on the clamper 1, dowel hole 24 laterally runs through clamper 1 (be dowel hole 24 run through from the left side sidewall of clamper 1, through running through the right sidewall of clamper 1 behind the cavity 23 again) from left to right.
The section of dowel hole 24 is right-angled trapezium (or rectangle); The cross section of dowel hole 24 is circle (also can be circle hat or Polygons), and the sectional area of dowel hole 24 is a kind of form (perhaps the sectional area of dowel hole 24 is invariable) of gradual change from left to right.Correspond to dowel hole 24, in dowel hole 24, establish the steady brace 4 (shape of steady brace 4 is the shapes for the hole of satisfying dowel hole 24) that matches with dowel hole 24.Be fixed with circular steady brace fixer (the steady brace fixer is around outer side wall one circle of clamper 1) on above-described clamper 1 outer side wall, the steady brace fixer is fixing with clamper 1 with steady brace 4.
During actual the use, being used for the seedholder that vertical pulling method prepares silicon single crystal and should sandwiching silicon seed 3 at the utility model.Specific as follows:
Silicon seed 3 (silicon seed is existing the most frequently used silicon seed) comprises silicon seed top 31, below silicon seed top 31, is fixed with silicon seed middle part 32, below silicon seed middle part 32, is fixed with silicon seed bottom 33; In silicon seed top 31, corresponding to dowel hole 24 establishes silicon seed clamping hole 25 (aperture, two ends of silicon seed clamping hole 25 is respectively greater than the aperture on the corresponding dowel hole 24; When steady brace 4 inserted silicon seed clamping hole 25, certain adjustment space can be reserved in silicon seed top 31); Silicon seed top 31 is sleeved in the cavity 23, and silicon seed middle part 32 is stuck in the silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22.Silicon seed top 31 is right cylinder (or prism; Mainly the shape according to cavity 23 determines); Silicon seed bottom 33 is the right cylinder (or prism) littler than silicon seed top 31; Silicon seed middle part 32 is for from the rounding platform that diminishes gradually greatly (perhaps chamfered edge platform, the end that silicon seed middle part 32 is connected with silicon seed top 31 is big, 32 ends that are connected with silicon seed bottom 33 are little in the middle part of the silicon seed); The installation method of the silicon seed 3 of the utility model is for from top to bottom, and promptly insert from the upper end of cavity 23 silicon seed bottom 33, and till silicon seed middle part 32 snapped into silicon seed clamp port 22, the upper side of dowel hole 24 was sea line or horizontal plane.
The section of steady brace 4 is a right-angled trapezium, and the oblique waist of the section of steady brace 4 (being right-angled trapezium) and the angle theta of right angle waist are 10 °.
The section of dowel hole 24 is a right angle trapezoidal (the right angle waist is in the upper end, and tiltedly waist is in the lower end), and the angle theta of oblique waist of the section of dowel hole 24 (being right-angled trapezium) and right angle waist is 10 °.
At this moment, the cross section of dowel hole 24 can be rectangle, circle or Polygons:
When the cross section of dowel hole 24 was a rectangle, the wide of the cross section of dowel hole 24 (being rectangle) was invariable, and the cross section of dowel hole 24 (being rectangle) area diminishes from left to right gradually; This moment, the cross section of steady brace 4 also was a rectangle, and the wide of the cross section of steady brace 4 (being rectangle) is invariable, and the cross section of steady brace 4 (being rectangle) area diminishes from left to right gradually.
The cross section of dowel hole 24 is a bowlder, and the diameter of the cross section of dowel hole 24 (promptly round) diminishes from left to right gradually; This moment, the cross section of steady brace 4 also was circle, and the diameter of the cross section of steady brace 4 (promptly round) diminishes from left to right gradually.
When the cross section of dowel hole 24 was a Polygons, the limit number of the cross section of dowel hole 24 (being Polygons) is 3 ~ 12, and preferred limit number was 3 ~ 6 for well, and preferred limit number is 4.The height in the cross section of dowel hole 24 (being Polygons) diminishes from left to right gradually, wide the diminishing gradually from left to right of the cross section of dowel hole 24 (being Polygons); This moment, the cross section of steady brace 4 also was the Polygons identical with the cross section of dowel hole 24, and the height of the cross section of steady brace 4 (being Polygons) diminishes from left to right gradually, wide the diminishing gradually from left to right of the cross section of steady brace 4 (being Polygons); The leftmost height in the cross section of steady brace 4 must be high greater than 31 leftmost cross sections, silicon seed top; The cross section of steady brace 4 leftmost wide must be wide greater than 31 leftmost cross sections, silicon seed top (be steady brace 4 when inserting dowel hole 24, the high order end of steady brace 4 must be stuck in the high order end of dowel hole 24).
Concrete steps during actual the use are:
1, the cavity 23 that silicon seed 3 (comprising silicon seed top 31, silicon seed middle part 32 and silicon seed bottom 33) is inserted from top to bottom; In silicon seed top 31 is sleeved on cavity 23; Silicon seed middle part 32 is stuck in the silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22;
2, the right angle waist of a steady brace 4 is inserted from the left end of dowel hole 24 down, successively the right-hand member through silicon seed clamping hole 25 and dowel hole 24 (can to silicon seed 3 make progress perhaps downward fine setting);
3, the left end from steady brace 4 applies a power N (steady brace 4 is stuck in silicon seed clamping hole 25 and the dowel hole 24);
4, use the steady brace fixer with steady brace 4 bandings (the steady brace fixer is around clamper one week of 1 outer side wall, with the two ends of steady brace fixer connect fixing can be with steady brace 4 bandings);
5, clamper 1 and vertical pulling method are made seed shaft in the single crystal growing furnace of silicon single-crystal be connected (through clamper 1 upper end fixed seed shaft coupling unit 11).
In order to realize the purpose of the utility model; The fixing means of the silicon seed 3 of the utility model (being silicon seed top 31, silicon seed middle part 32 and silicon seed bottom 33) is on steady brace 4, to apply one (to use the steady brace fixer with steady brace 4 bandings by left-to-right power N; Can keep applying the effect behind the power N for a long time); Utilize the reactive force of steady brace 4 ramps make silicon seed top 31 make progress stressed N2 (when install from top to bottom on silicon seed top 31) or to lower stress N1 (when silicon seed top 31 when installing from top to bottom); Steady brace 4 adapts to silicon seed top 31 and connects; Make silicon seed top 31 lateral stressed; Can not cause looseningly under the centrifugal inertial force effect when the rotation of silicon seed top 31,, can proofread and correct fixing yet through laterally moving of steady brace 4 even when there is error in the shape at above-described silicon seed middle part 32 with 22 adaptations of above-described silicon seed clamp port; Thereby guaranteed the fixing flexibly of silicon seed top 31, do not influenced the crystal orientation degree of bias of silicon seed 3 (being silicon seed top 31, silicon seed middle part 32 and silicon seed bottom 33).
Embodiment 2, silicon seed top 31 are prism or right cylinder; Silicon seed bottom 33 is prism or the right cylinder bigger than silicon seed top 31; Silicon seed middle part 32 is for from little big terrace with edge or the round platform (end that silicon seed middle part 32 is connected with silicon seed top 31 is little, and 32 ends that are connected with silicon seed bottom 33 are big in the middle part of the silicon seed) of becoming gradually; Insert in the cavity 23 from the below of silicon seed clamp port 22 on the silicon seed top 31 of this moment, till silicon seed middle part 32 snaps into silicon seed clamp port 22.
Serve as reasons down when supreme when the installation method of the silicon seed 3 of the utility model, the downside of dowel hole 24 is sea line or horizontal plane.The section of dowel hole 24 is a right angle trapezoidal (the right angle waist is in the lower end, and tiltedly waist is in the upper end).The cross section of dowel hole 24 can be rectangle, circle or Polygons.Concrete is identical with embodiment 1.
Concrete steps during actual the use are:
1, the cavity 23 that silicon seed 3 (comprising silicon seed top 31, silicon seed middle part 32 and silicon seed bottom 33) is inserted from bottom to up; In silicon seed top 31 is sleeved on cavity 23; Silicon seed middle part 32 is stuck in the silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22;
2, the right angle waist of a steady brace 4 is inserted from the left end of dowel hole 24 up, successively the right-hand member through silicon seed clamping hole 25 and dowel hole 24 (can to silicon seed 3 make progress perhaps downward fine setting);
3, the left end from steady brace 4 applies a power N (steady brace 4 is stuck in silicon seed clamping hole 25 and dowel hole 24);
4, use the steady brace fixer with steady brace 4 bandings (the steady brace fixer is around clamper one week of 1 outer side wall, with the two ends of steady brace fixer connect fixing can be with steady brace 4 bandings).
5, clamper 1 and vertical pulling method are made seed shaft in the single crystal growing furnace of silicon single-crystal be connected (through clamper 1 upper end fixed seed shaft coupling unit 11).
Concrete steps during actual the use are:
1, the cavity 23 that silicon seed 3 (comprising silicon seed top 31, silicon seed middle part 32 and silicon seed bottom 33) is inserted from top to bottom; In silicon seed top 31 is sleeved on cavity 23; Silicon seed middle part 32 is stuck in the silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22;
2, the right angle waist of a steady brace 4 is inserted from an end of dowel hole 24 down, successively the other end (steady brace 4 is exposed some the other end at dowel hole 24 to get final product) through silicon seed clamping hole 25 and dowel hole 24;
3, the right angle waist with another root steady brace 4 inserts an end that inserts in step 1 through silicon seed clamping hole 25 and dowel hole 24 successively up from the other end of dowel hole 24;
4, exert oneself from the bottom of two steady braces 4 respectively, make two steady braces 4 be stuck in dowel hole 24 and the silicon seed clamping hole 25;
5, use the steady brace fixer with steady brace 4 bandings (the steady brace fixer is around clamper one week of 1 outer side wall, with the two ends of steady brace fixer connect fixing can be with steady brace 4 bandings);
6, clamper 1 and vertical pulling method are made seed shaft in the single crystal growing furnace of silicon single-crystal be connected (through clamper 1 upper end fixed seed shaft coupling unit 11).
The utility model has been designed a kind of seedholder that vertical pulling method prepares silicon single crystal that is used for of special shape; Cooperate silicon seed 3 to use; Can satisfy the development need of semiconductor silicon material, can be used for making the preparation of the semiconductor grade silicon single-crystal of unicircuit and other electron component.Adopt the silicon seed 3 bearing accuracies height that vertical pulling method prepares the seedholder cooperation of silicon single crystal that is used for of the utility model; The particular crystal orientation degree of bias of the growth crystal orientation degree of bias of mounted silicon seed 3 and the silicon seed 3 of preparation differs very little; Deviation can be controlled at 15 ' in; So can accurately control the crystalline crystal orientation degree of bias according to particular requirement, improve the monocrystalline quality.
Comparative Examples 1, with second kind of method commonly used in the background technology as a comparison example 1 compare with embodiment 2:
The data of in real operation, obtaining show; The particular crystal orientation degree of bias of silicon seed 3 of preparation is 5 ' to 10 ' between; After using Comparative Examples 1 described clamper 1 that silicon seed 3 is installed; When there is error in the size adaptation of clamper 1 and silicon seed 3 (especially after clamper 1 uses the long period); The crystalline crystal orientation degree of bias of its growth is between 0.5 ° to 3 °, and can't accurately control its crystal orientation degree of bias, in silicon single-crystal standard GB/T 12962-2005 standard the crystal orientation irrelevance of czochralski silicon monocrystal be not more than 2 °.Because the degree of bias big product percent of pass that causes in crystal orientation descends 2% to 10%.
The data of in real operation, obtaining show, use silicon seed 3 and the seedholder among the embodiment 2 after, the crystalline crystal orientation degree of bias of growth maintains 5 ' to 25 ' between.
Comparative Examples 2, with the third method commonly used in the background technology as a comparison example 2 compare with embodiment 1:
Comparative Examples 2 is a kind of silicon seed 3 of domestic utility model patent 02131185.4 design, and its main purpose is to adopt rounding platform or chamfered edge platform load, increases the monocrystalline weight that seed crystal can bear, to satisfy the silicon monocrystal growth needs of the high weight of major diameter.But; The data of in real operation, obtaining show; After using Comparative Examples 2 described clampers 1 that silicon seed 3 is installed; Silicon seed 3 is causing loosening (especially when there is error in the size adaptation of silicon seed 3 and clamper 1) under the centrifugal inertial force effect of high speed rotating easily, because the success ratio of the silicon seed 3 loosening crystal growths that cause descends 10% to 20%.And because the loosening crystalline crystal orientation degree of bias that causes between 0.5 ° to 3 °, and can't accurately be controlled its crystal orientation degree of bias, in silicon single-crystal standard GB/T 12962-2005 standard the crystal orientation irrelevance of czochralski silicon monocrystal be not more than 2 °.Because the degree of bias big product percent of pass that causes in crystal orientation descends 2% to 10%.
The data of obtaining in the real operation show; After using the silicon seed 3 and clamper 1 among the embodiment 1; Because the fixed action of silicon seed top 31 and steady brace 4; Even the size of silicon seed 3 and clamper 1 adapts to when existing than mistake, silicon seed 3 can not cause loosening under high speed rotating yet, can not impact the success ratio of crystal growth.And steady brace 4 employing inclined-planes are fixing flexibly, can not influence the crystalline crystal orientation degree of bias of growth, the crystal orientation degree of bias maintains 5 ' to 25 ' between.Be applicable to the silicon monocrystal growth of the high weight of major diameter and the control of the crystal orientation degree of bias and monocrystalline quality thereof.
The data that above Comparative Examples 1 and Comparative Examples 2 are obtained in real operation are by Instrument measurings such as X-ray orientation devices, and the process of mensuration is those skilled in the art known technology of one's own profession.
At last, it is also to be noted that what more than enumerate only is several specific embodiments of the utility model.Obviously, the utility model is not limited to above embodiment, and many distortion can also be arranged.All distortion that those of ordinary skill in the art can directly derive or associate from the disclosed content of the utility model all should be thought the protection domain of the utility model.
Claims (6)
1. be used for the seedholder that vertical pulling method prepares silicon single crystal, comprise clamper (1), be provided with seed shaft coupling unit (11) in the top of said clamper (1); It is characterized in that: be provided with the cavity (23) of up/down perforation in the said clamper (1), said cavity (23) below is provided with silicon seed clamp port (22);
The sidewall of said clamper (1) is provided with the dowel hole (24) of at least one, and said dowel hole (24) runs through the right side wall of left side wall, cavity (23) and the clamper (1) of clamper (1) from left to right successively;
Correspond to dowel hole (24); In dowel hole (24), be provided with steady brace (4), said steady brace (4) runs through the dowel hole (24) on dowel hole (24), cavity (23) and clamper (1) right side in clamper (1) left side successively;
The outer side wall of said clamper (1) is provided with the steady brace fixer, and said steady brace fixer is fixing with steady brace (4) and clamper (1).
2. according to claim 1ly be used for the seedholder that vertical pulling method prepares silicon single crystal, it is characterized in that: the section of said dowel hole (24) is a right-angled trapezium, and the oblique waist of said right-angled trapezium and the angle θ of right angle waist are 0 ° ~ 90 °.
3. according to claim 1ly be used for the seedholder that vertical pulling method prepares silicon single crystal, it is characterized in that: the section of said dowel hole (24) is a rectangle.
4. according to claim 2ly be used for the seedholder that vertical pulling method prepares silicon single crystal, it is characterized in that: the side of said silicon seed clamp port (22) is 10 ° ~ 30 ° with the angle of axle.
5. according to claim 4ly be used for the seedholder that vertical pulling method prepares silicon single crystal, it is characterized in that: the side of said silicon seed clamp port (22) is 15 ° with the angle of axle.
6. according to claim 5ly be used for the seedholder that vertical pulling method prepares silicon single crystal, it is characterized in that: the cross section of dowel hole (24) is rectangle, circle or Polygons.
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| CN 201220198929 CN202610382U (en) | 2012-05-04 | 2012-05-04 | Seed crystal holder for preparation of monocrystalline silicon by czochralski technique |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628179A (en) * | 2012-05-04 | 2012-08-08 | 杭州海纳半导体有限公司 | Seed crystal holder for producing monocrystalline silicon by straight-pulling method and usage thereof |
| CN110230093A (en) * | 2019-07-10 | 2019-09-13 | 深圳市全普科技有限公司 | A kind of seed crystal clamping pulling apparatus for monocrystalline silicon growing furnace |
-
2012
- 2012-05-04 CN CN 201220198929 patent/CN202610382U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628179A (en) * | 2012-05-04 | 2012-08-08 | 杭州海纳半导体有限公司 | Seed crystal holder for producing monocrystalline silicon by straight-pulling method and usage thereof |
| CN102628179B (en) * | 2012-05-04 | 2015-12-16 | 杭州海纳半导体有限公司 | Seedholder and the using method of silicon single crystal is prepared for vertical pulling method |
| CN110230093A (en) * | 2019-07-10 | 2019-09-13 | 深圳市全普科技有限公司 | A kind of seed crystal clamping pulling apparatus for monocrystalline silicon growing furnace |
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