CN202586298U - Power battery thermal management switching MOS tube short-circuit protection circuit - Google Patents
Power battery thermal management switching MOS tube short-circuit protection circuit Download PDFInfo
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- CN202586298U CN202586298U CN 201220217955 CN201220217955U CN202586298U CN 202586298 U CN202586298 U CN 202586298U CN 201220217955 CN201220217955 CN 201220217955 CN 201220217955 U CN201220217955 U CN 201220217955U CN 202586298 U CN202586298 U CN 202586298U
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Abstract
The utility model relates to a power battery thermal management switching MOS tube short-circuit protection circuit. The object of the utility model is to provide a power battery thermal management switching MOS tube short-circuit protection circuit which can decrease damage caused by MOS tube short circuit. The circuit includes a heating loop circuit for heating a power battery; a switching MOS tube short-circuit protection circuit used for short-circuit protection of an MOS tube; and a heating loop detection circuit used for perform real-time monitoring on heating control to determine whether the heating control is in a normal working state, wherein the heating loop circuit is connected with the switching MOS tube short-circuit protection circuit and the heating loop detection circuit respectively. The power battery thermal management switching MOS tube short-circuit protection circuit is advantageous in that a fuse can be automatically fused to avoid damage on the power battery under an unsupervised situation with an auxiliary power source being switched off; and damage on the power battery can be avoided through the heating loop detection circuit under a supervised situation with the auxiliary power source being switched on, thereby reducing damage caused by the MOS tube short circuit.
Description
Technical field
The utility model relates to the protective circuit correlative technology field, especially relates to a kind of electrokinetic cell heat management switch MOS tube short circuit protective circuit.
Background technology
Battery thermal management; Be according to the influence of temperature,, discharge and recharge temperature range based on the best of concrete battery in conjunction with the electrochemical properties and the heat production mechanism of battery to battery performance; Through rational design; Be based upon on the multidisciplinary multi-field bases such as materialogy, electrochemistry, thermal conduction study, molecular dynamics, working under situation too high or too low for temperature for the solution battery causes heat dissipation or thermal runaway problem, to promote a new technology of cell integrated performance.At pure electric automobile, hybrid-electric car and other are the dynamical system of power resources with moving battery, and the battery thermal management meaning is huge.Increasingly mature along with the electrokinetic cell thermal management technology; Increasing designer selects metal-oxide-semiconductor as the switch that adds thermal control, still, because the characteristic of metal-oxide-semiconductor; Cause metal-oxide-semiconductor in use to receive factor affecting such as static easily and short circuit damages; Cause heating control fails, can't normal turn-off, exhaust until battery electric quantity at last.
Chinese patent Granted publication number: CN 201860489U; Granted publication day is on June 8th, 2011; Disclose a kind of automotive lighting LED and driven short-circuit protection circuit; Comprise that input voltage vin, output voltage V out, LED, buffer circuit module, metal-oxide-semiconductor drive circuit module, P-MOS manage Q1, pwm chip and feedback circuit module; Input voltage vin is connected with output voltage V out with buffer circuit module, metal-oxide-semiconductor drive circuit module, P-MOS pipe Q1 successively, and said feedback circuit module and pwm chip are connected between output voltage V out and the input voltage vin, form feedback loop; And the LED short-circuit protection circuit module that links to each other with LED, said LED short-circuit protection circuit module comprises a plurality of switch modules and division module.The weak point of this utility model is, metal-oxide-semiconductor is easy to receive factor affecting such as static and short circuit damages in this protective circuit.
The utility model content
The utility model is in order to overcome in the prior art that metal-oxide-semiconductor on the protective circuit is easy to receive factor affecting such as static and the problem that short circuit damages provides a kind of reduction to cause the electrokinetic cell heat management switch MOS tube short circuit protective circuit of damage because of the metal-oxide-semiconductor short circuit.
To achieve these goals, the utility model adopts following technical scheme:
A kind of electrokinetic cell heat management switch MOS tube short circuit protective circuit of the utility model comprises the heating circuit circuit that is used for the electrokinetic cell heating; The switch MOS tube short circuit protective circuit that is used for the short-circuit protection metal-oxide-semiconductor; And to adding the thermal control heating circuit testing circuit whether operate as normal is monitored in real time, described heating circuit circuit connects switch MOS tube short circuit protective circuit and heating circuit testing circuit respectively.
Described heating circuit circuit is used for the heating of electrokinetic cell, and the inner metal-oxide-semiconductor that adopts is provided with fuse as the switch that adds thermal control, can break off heating circuit and protect electrokinetic cell.Described switch MOS tube short circuit protective circuit is used for detecting the metal-oxide-semiconductor of heating circuit circuit; Described heating circuit testing circuit is used for adding the whether real-time monitoring of operate as normal of thermal control; Described heating circuit circuit connects switch MOS tube short circuit protective circuit and heating circuit testing circuit respectively; It has two kinds of operating states, realizes through the accessory power supply in the circuit.When power supply, upload alarm signal through the heating circuit testing circuit and directly carry out the alert notice attendant and in time safeguard; When not having power supply, the fuse in the heating circuit circuit that can fuse is automatically protected electrokinetic cell.Design can reduce the damage that causes because of the metal-oxide-semiconductor short circuit like this, effectively avoids the unusual loss of electrokinetic cell.
As preferably; Described heating circuit circuit comprises quick fuse fuse, ptc heater, switch MOS pipe and switch MOS tube drive circuit; Described quick fuse fuse connects an end of positive source and ptc heater respectively, and described switch MOS pipe source electrode connects power cathode, and described switch MOS tube grid connects the switch MOS tube drive circuit; Described switch MOS pipe drain electrode connects the other end of ptc heater; Come the driving switch metal-oxide-semiconductor to start ptc heater through the switch MOS tube drive circuit electrokinetic cell is heated, the quick fuse fuse can break off heating circuit, to realize the short-circuit protection to the switch metal-oxide-semiconductor.
As preferably; Described switch MOS tube short circuit protective circuit comprises parallel resistance, first divider resistance, second divider resistance, the 3rd divider resistance, the 4th divider resistance, NMOS pipe, the 2nd NMOS pipe, short-circuit protection metal-oxide-semiconductor and accessory power supply; One end of said parallel resistance connects first divider resistance, second divider resistance and power cathode successively; Be connected the 3rd divider resistance between the drain electrode of described short-circuit protection metal-oxide-semiconductor and the grid; Be connected the 4th divider resistance between described short-circuit protection metal-oxide-semiconductor source electrode and the grid, described short-circuit protection metal-oxide-semiconductor source electrode connects power cathode, and described short-circuit protection metal-oxide-semiconductor drain electrode connects the other end of parallel resistance; The drain electrode of described NMOS pipe connects drain electrode of the 2nd NMOS pipe and short-circuit protection metal-oxide-semiconductor grid respectively; Described NMOS pipe source electrode connects the 2nd NMOS pipe source electrode and power cathode respectively, and a described NMOS tube grid connects the tie point of first divider resistance and second divider resistance, and described the 2nd NMOS tube grid connects accessory power supply; Described short-circuit protection metal-oxide-semiconductor drain electrode connects the tie point of quick fuse fuse and ptc heater, and described parallel resistance is parallelly connected with ptc heater.When accessory power supply did not start, the 2nd NMOS pipe was off state, if switch MOS pipe normal turn-off, NMOS pipe is opened, and the short-circuit protection metal-oxide-semiconductor is in off state; If the switch MOS tube short circuit damages, a NMOS manages shutoff, and the short-circuit protection metal-oxide-semiconductor is opened, and the quick fuse fuse is owing to the overcurrent quick-break, and the heating circuit circuit breaks off.When auxiliary power start, the 2nd NMOS pipe is opening, and the short-circuit protection metal-oxide-semiconductor is in off state always, at this moment, when the unusual short circuit of switch MOS pipe damages, notifies the attendant through the heating circuit testing circuit, carries out demolition and maintenance to damaging circuit.
As preferably, be connected with current-limiting resistance between described the 2nd NMOS tube grid and the accessory power supply, can effectively avoid when auxiliary power start, damaging the 2nd NMOS and manage owing to electric current is excessive.
As preferably; Between a described NMOS tube grid and the source electrode, between the 2nd NMOS tube grid and the source electrode and be connected with first voltage-stabiliser tube, second voltage-stabiliser tube and the 3rd voltage-stabiliser tube between short-circuit protection metal-oxide-semiconductor grid and the source electrode respectively; The negative electrode of said first voltage-stabiliser tube, second voltage-stabiliser tube and the 3rd voltage-stabiliser tube is connected a NMOS tube grid, the 2nd NMOS tube grid and short-circuit protection metal-oxide-semiconductor grid respectively, is used to protect NMOS pipe, the 2nd NMOS pipe and short-circuit protection metal-oxide-semiconductor driving voltage in normal range (NR).
As preferably, be connected with electric capacity between described short-circuit protection metal-oxide-semiconductor grid and the source electrode, be used to slow down the start-up time of short-circuit protection metal-oxide-semiconductor.
As preferably, described heating circuit testing circuit connects the tie point of the drain electrode of switch MOS pipe and ptc heater, is used for monitoring in real time the switch MOS plumber and makes state.
As preferably, described heating circuit testing circuit comprises warning circuit, through warning circuit can be real-time send alarm signal to attendant, make it in time carry out demolition and maintenance.
The beneficial effect of the utility model is: through heating circuit circuit and switch MOS tube short circuit protective circuit realized accessory power supply do not open and the no supervision state under, the fuse that fuses is automatically avoided the damage of electrokinetic cell; Realized opening and having under people's supervision state through heating circuit circuit, switch MOS tube short circuit protective circuit and heating circuit testing circuit at accessory power supply; Avoid the damage of electrokinetic cell through uploading alarm signal, cause damage thereby effectively reduced because of the metal-oxide-semiconductor short circuit.
Description of drawings
Fig. 1 is a kind of electrical block diagram of the utility model.
Among the figure: 1. heating circuit circuit, 2. switch MOS tube short circuit protective circuit, 3. heating circuit testing circuit, 11. quick fuse fuses, 12.PTC heater; 13. the switch MOS pipe, 14. switch MOS tube drive circuits, 21. parallel resistances, 22. first divider resistances; 23. second divider resistance, 24. first voltage-stabiliser tubes, 25. the one NMOS pipe, 26. the 2nd NMOS pipe; 27. the short-circuit protection metal-oxide-semiconductor, 28. the 3rd divider resistances, 29. the 4th divider resistances, 210. the 3rd voltage-stabiliser tubes; 211. electric capacity, 212. second voltage-stabiliser tubes, 213. current-limiting resistances, 214. accessory power supplys.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is done further description.
Among the embodiment as shown in Figure 1, a kind of electrokinetic cell heat management switch MOS tube short circuit protective circuit comprises the heating circuit circuit 1 that is used for the electrokinetic cell heating; The switch MOS tube short circuit protective circuit 2 that is used for the short-circuit protection metal-oxide-semiconductor; And to adding the thermal control heating circuit testing circuit 3 whether operate as normal is monitored in real time, heating circuit circuit 1 connects switch MOS tube short circuit protective circuit 2 and heating circuit testing circuit 3 respectively.Heating circuit circuit 1 comprises quick fuse fuse 11, ptc heater 12, switch MOS pipe 13 and switch MOS tube drive circuit 14; Quick fuse fuse 11 connects an end of positive source and ptc heater 12 respectively; Switch MOS pipe 13 source electrodes connect power cathode; Switch MOS pipe 13 grids connect switch MOS tube drive circuit 14, and 13 drain electrodes of switch MOS pipe connect the other end of ptc heater 12.Switch MOS tube short circuit protective circuit 2 comprises parallel resistance 21, first divider resistance 22, second divider resistance 23, the 3rd divider resistance 28, the 4th divider resistance 29, NMOS pipe the 25, the 2nd NMOS pipe 26, short-circuit protection metal-oxide-semiconductor 27 and accessory power supply 214; One end of parallel resistance 21 connects first divider resistance 22, second divider resistance 23 and the power cathode successively; Be connected the 3rd divider resistance 28 between short-circuit protection metal-oxide-semiconductor 27 drain electrode and the grid; Be connected the 4th divider resistance 29 between short-circuit protection metal-oxide-semiconductor 27 source electrodes and the grid; Short-circuit protection metal-oxide-semiconductor 27 source electrodes connect power cathode; Short-circuit protection metal-oxide-semiconductor 27 drain electrode connects the other end of parallel resistances 21, and 25 drain electrodes of NMOS pipe connect the 2nd NMOS pipe 26 drain electrode and short-circuit protection metal-oxide-semiconductor 27 grids respectively, and a NMOS manages 25 source electrodes and connects the 2nd NMOS respectively and manage 26 source electrodes and power cathode; The one NMOS manages the tie point that 25 grids connect first divider resistance 22 and second divider resistance 23; The 2nd NMOS manages 26 grids and connects accessory power supply 214, and 27 drain electrodes of short-circuit protection metal-oxide-semiconductor connect the tie point of quick fuse fuse 11 and ptc heater 12, and parallel resistance 21 is parallelly connected with ptc heater 12.The 2nd NMOS manages between 26 grids and the accessory power supply 214 and is connected with current-limiting resistance 213.The one NMOS manages between 25 grids and the source electrode, the 2nd NMOS manages between 26 grids and the source electrode and short-circuit protection metal-oxide-semiconductor 27 grids and source electrode between be connected with first voltage-stabiliser tube 24, second voltage-stabiliser tube 212 and the 3rd voltage-stabiliser tube 210, the first voltage-stabiliser tubes 24, second voltage-stabiliser tube 212 and the 3rd voltage-stabiliser tube 210 respectively negative electrode be connected respectively that a NMOS manages 25 grids, the 2nd NMOS manages 26 grids and short-circuit protection metal-oxide-semiconductor 27 grids.Be connected with electric capacity 211 between short-circuit protection metal-oxide-semiconductor 27 grids and the source electrode.Heating circuit testing circuit 3 connects the tie point of 13 drain electrodes of switch MOS pipe and ptc heater 12.Heating circuit testing circuit 3 comprises warning circuit.
Wherein, short-circuit protection metal-oxide-semiconductor 27 is used for the short-circuit protection of heating circuit circuit; The 3rd divider resistance 28, the 4th divider resistance 29 are used to provide the GS positive drive voltage of short-circuit protection metal-oxide-semiconductor 27; The 3rd voltage-stabiliser tube 210, the driving voltage that is used to protect short-circuit protection metal-oxide-semiconductor 27 is in normal range (NR); Electric capacity 211, the start-up time that is used to slow down short-circuit protection metal-oxide-semiconductor 27; The one NMOS pipe the 25, the 2nd NMOS pipe 26 is used to control short-circuit protection metal-oxide-semiconductor 27, is off state when making its operate as normal; First divider resistance 22, second divider resistance 23 are used to provide the GS positive drive voltage of NMOS pipe 25; First voltage-stabiliser tube 24, the driving voltage that is used to protect NMOS pipe 25 is in normal range (NR); Accessory power supply 216 is 12V, is used to drive the 2nd NMOS pipe 26; Current-limiting resistance 213 is used to limit flowing to the electric current that the 2nd NMOS manages 26 grids; Second voltage-stabiliser tube 212, the driving voltage that is used to protect the 2nd NMOS pipe 26 is in normal range (NR); Parallel resistance 21, parallelly connected with ptc heater 12, when the ptc heater in the heating circuit circuit 1 12 did not connect, the grid of NMOS pipe 25 was a high level, is used to turn-off short-circuit protection metal-oxide-semiconductor 27.Below switch metal-oxide-semiconductor short-circuit protection circuit 2 operation principles are described by following situation:
When 1, accessory power supply 214 did not start, electrokinetic cell was in the no supervision state.
The 2nd NMOS pipe 26 is an off state; When switch MOS pipe 13 normal turn-off; First divider resistance 22, second divider resistance 23 provide the GS positive drive voltage of NMOS pipe 25; The one NMOS pipe 25 is opened, and the G that makes short-circuit protection metal-oxide-semiconductor 27 is low level very, and short-circuit protection metal-oxide-semiconductor 27 is in off state; When switch MOS pipe 13 damages owing to reasons such as static, cause 13 short circuits of switch MOS pipe, the one NMOS pipe 25 G this moment low level very; The one NMOS pipe 25 is turn-offed; Because NMOS pipe 25 turn-offs, the 3rd divider resistance 28, the 4th divider resistance 29 provide the GS positive drive voltage of short-circuit protection metal-oxide-semiconductor 27, and short-circuit protection metal-oxide-semiconductor 27 is opened; After short-circuit protection metal-oxide-semiconductor 27 is opened; Quick fuse fuse 11 is owing to the overcurrent quick-break, and heating circuit breaks off, and avoids the unusual lasting power consumption of electrokinetic cell.
2, accessory power supply 214 starts, and electrokinetic cell is in the someone and supervises state.
The 2nd NMOS pipe 26 is an opening, and the G of short-circuit protection metal-oxide-semiconductor 27 is low level very, and short-circuit protection metal-oxide-semiconductor 27 is in off state always; At this moment; When the 13 unusual short circuits damages of switch MOS pipe, heating circuit testing circuit 3 will be uploaded alarm signal, after the attendant receives; Carry out demolition and maintenance to damaging circuit, break off unusual heating circuit.
Claims (8)
1. an electrokinetic cell heat management switch MOS tube short circuit protective circuit is characterized in that, comprising:
The heating circuit circuit (1) that is used for the electrokinetic cell heating;
The switch MOS tube short circuit protective circuit (2) that is used for the short-circuit protection metal-oxide-semiconductor;
And to adding the whether operate as normal heating circuit testing circuit (3) of monitoring in real time of thermal control,
Described heating circuit circuit (1) connects switch MOS tube short circuit protective circuit (2) and heating circuit testing circuit (3) respectively.
2. electrokinetic cell heat management switch MOS tube short circuit protective circuit according to claim 1; It is characterized in that; Described heating circuit circuit (1) comprises quick fuse fuse (11), ptc heater (12), switch MOS pipe (13) and switch MOS tube drive circuit (14); Described quick fuse fuse (11) connects an end of positive source and ptc heater (12) respectively; Described switch MOS pipe (13) source electrode connects power cathode, and described switch MOS pipe (13) grid connects switch MOS tube drive circuit (14), and described switch MOS pipe (13) drain electrode connects the other end of ptc heater (12).
3. electrokinetic cell heat management switch MOS tube short circuit protective circuit according to claim 2; It is characterized in that; Described switch MOS tube short circuit protective circuit (2) comprises that parallel resistance (21), first divider resistance (22), second divider resistance (23), the 3rd divider resistance (28), the 4th divider resistance (29), NMOS pipe (25), the 2nd NMOS manage (26), short-circuit protection metal-oxide-semiconductor (27) and accessory power supply (214); One end of said parallel resistance (21) connects first divider resistance (22), second divider resistance (23) and power cathode successively; Be connected the 3rd divider resistance (28) between described short-circuit protection metal-oxide-semiconductor (27) drain electrode and the grid; Be connected the 4th divider resistance (29) between described short-circuit protection metal-oxide-semiconductor (27) source electrode and the grid; Described short-circuit protection metal-oxide-semiconductor (27) source electrode connects power cathode; Described short-circuit protection metal-oxide-semiconductor (27) drain electrode connects the other end of parallel resistance (21); Described NMOS pipe (25) drain electrode connects the 2nd NMOS pipe (26) drain electrode and short-circuit protection metal-oxide-semiconductor (27) grid respectively; Described NMOS pipe (25) source electrode connects the 2nd NMOS pipe (26) source electrode and power cathode respectively, and described NMOS pipe (25) grid connects the tie point of first divider resistance (22) and second divider resistance (23), and described the 2nd NMOS pipe (26) grid connects accessory power supply (214); Described short-circuit protection metal-oxide-semiconductor (27) drain electrode connects the tie point of quick fuse fuse (11) and ptc heater (12), and described parallel resistance (21) is parallelly connected with ptc heater (12).
4. electrokinetic cell heat management switch MOS tube short circuit protective circuit according to claim 3 is characterized in that, is connected with current-limiting resistance (213) between described the 2nd NMOS pipe (26) grid and the accessory power supply (214).
5. electrokinetic cell heat management switch MOS tube short circuit protective circuit according to claim 3; It is characterized in that; A described NMOS manages between (25) grid and the source electrode, the 2nd NMOS manages between (26) grid and the source electrode and be connected with first voltage-stabiliser tube (24), second voltage-stabiliser tube (212) and the 3rd voltage-stabiliser tube (210) between short-circuit protection metal-oxide-semiconductor (27) grid and the source electrode respectively, and the negative electrode of said first voltage-stabiliser tube (24), second voltage-stabiliser tube (212) and the 3rd voltage-stabiliser tube (210) is connected NMOS pipe (25) grid, the 2nd NMOS pipe (26) grid and short-circuit protection metal-oxide-semiconductor (27) grid respectively.
6. according to claim 3 or 4 or 5 described electrokinetic cell heat management switch MOS tube short circuit protective circuits, it is characterized in that, be connected with electric capacity (211) between described short-circuit protection metal-oxide-semiconductor (27) grid and the source electrode.
7. according to claim 2 or 3 described electrokinetic cell heat management switch MOS tube short circuit protective circuits, it is characterized in that described heating circuit testing circuit (3) connects the tie point of switch MOS pipe (13) drain electrode and ptc heater (12).
8. according to claim 1 or 2 or 3 described electrokinetic cell heat management switch MOS tube short circuit protective circuits, it is characterized in that described heating circuit testing circuit (3) comprises warning circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220217955 CN202586298U (en) | 2012-05-16 | 2012-05-16 | Power battery thermal management switching MOS tube short-circuit protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220217955 CN202586298U (en) | 2012-05-16 | 2012-05-16 | Power battery thermal management switching MOS tube short-circuit protection circuit |
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| CN202586298U true CN202586298U (en) | 2012-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220217955 Expired - Fee Related CN202586298U (en) | 2012-05-16 | 2012-05-16 | Power battery thermal management switching MOS tube short-circuit protection circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104464783A (en) * | 2014-12-18 | 2015-03-25 | 江苏天安智联科技股份有限公司 | Car-mounted memory card interface short-circuit protection device |
| CN108736869A (en) * | 2018-04-27 | 2018-11-02 | 深圳市费思泰克科技有限公司 | Electronic load metal-oxide-semiconductor driver protects circuit |
| CN110265735A (en) * | 2019-06-18 | 2019-09-20 | 华霆（合肥）动力技术有限公司 | Battery thermal runaway protects system and electric car |
| CN110957540A (en) * | 2018-09-26 | 2020-04-03 | 惠州市蓝微电子有限公司 | Management system and method for identifying and processing MOS short circuit |
| CN112798917A (en) * | 2020-07-23 | 2021-05-14 | 浙江高泰昊能科技有限公司 | Heating MOS tube adhesion detection circuit and detection method thereof |
-
2012
- 2012-05-16 CN CN 201220217955 patent/CN202586298U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104464783A (en) * | 2014-12-18 | 2015-03-25 | 江苏天安智联科技股份有限公司 | Car-mounted memory card interface short-circuit protection device |
| CN108736869A (en) * | 2018-04-27 | 2018-11-02 | 深圳市费思泰克科技有限公司 | Electronic load metal-oxide-semiconductor driver protects circuit |
| CN110957540A (en) * | 2018-09-26 | 2020-04-03 | 惠州市蓝微电子有限公司 | Management system and method for identifying and processing MOS short circuit |
| CN110265735A (en) * | 2019-06-18 | 2019-09-20 | 华霆（合肥）动力技术有限公司 | Battery thermal runaway protects system and electric car |
| CN110265735B (en) * | 2019-06-18 | 2022-04-19 | 华霆（合肥）动力技术有限公司 | Battery thermal runaway protection system and electric automobile |
| CN112798917A (en) * | 2020-07-23 | 2021-05-14 | 浙江高泰昊能科技有限公司 | Heating MOS tube adhesion detection circuit and detection method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121205 Termination date: 20190516 |
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| CF01 | Termination of patent right due to non-payment of annual fee |