CN202576559U - Selenization and vulcanization reaction device for copper indium gallium selenide solar cell substrate - Google Patents
Selenization and vulcanization reaction device for copper indium gallium selenide solar cell substrate Download PDFInfo
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- CN202576559U CN202576559U CN2012201347294U CN201220134729U CN202576559U CN 202576559 U CN202576559 U CN 202576559U CN 2012201347294 U CN2012201347294 U CN 2012201347294U CN 201220134729 U CN201220134729 U CN 201220134729U CN 202576559 U CN202576559 U CN 202576559U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a selenization and vulcanization reaction device for a copper indium gallium selenide solar cell substrate. The selenization and vulcanization reaction device comprises an outer chamber, at least two reaction chambers, a plurality of heaters, heat reflecting layers and a conveyer, wherein the outer chamber is provided with an outer chamber entrance and an outer chamber exit which are used for the substrate to get in and out, and air spray isolation devices are respectively arranged at the outer chamber entrance and the outer chamber exit; the at least two reaction chambers are arranged in the outer chamber, each reaction chamber is provided with a reaction chamber entrance and a reaction chamber exit which are used for the substrate to get in and out, air spray isolation devices are respectively arranged at the reaction chamber entrance and the reaction chamber exit, and selenium steam pipes or sulfur steam pipes are respectively arranged on the reaction chambers; the heaters are arranged outside the reaction chambers; the heat reflecting layers cover the external surfaces of the reaction chambers, and the heaters are arranged between the reaction chambers and the heat reflecting layers; and the conveyer is used for conveying the substrate in and out of the reaction chambers. By using the selenization and vulcanization reaction device for the copper indium gallium selenide solar cell substrate, the selenization and vulcanization reaction of the substrate can be realized, and the process requirements of the selenization and vulcanization reaction are satisfied.
Description
Technical field
The utility model relates to a kind of production unit of solar cell, particularly a kind of selenizing of copper indium gallium selenium solar cell substrate and vulcanization reaction device.
Background technology
Copper indium gallium selenium solar cell has distinguishing features such as production cost is low, pollution is little, do not fail, low light level performance is good; Photoelectric transformation efficiency occupies first of the various thin-film solar cells; Approach crystal silicon solar energy battery; Cost then is 1/3rd of a crystal silicon cell, is called the novel thin film solar cell in the world, but its requirement to technology and preparation condition is very high.
Copper-indium-galliun-selenium film solar cell adopts soda-lime glass, film be formed with the first step, the deposition molybdenum film forms hearth electrode; In second step, deposited copper indium gallium film forms preformed layer; In the 3rd step, generate the CIGS crystal by selenizing and vulcanization reaction; In the 4th step, form cadmium sulphide membrane; In the 5th step, form the summit very thin films.Wherein selenizing and the vulcanization reaction in the 3rd step and generate the copper-indium-galliun-selenium crystal are most important steps in the above several steps.Carry out selenizing in the existing copper indium gallium selenium solar cell production process and vulcanization reaction does not have special equipment, each producer makes corresponding apparatus according to its processing condition to realize selenizing and vulcanization reaction.
The utility model content
The purpose of the utility model is to provide a kind of selenizing and vulcanization reaction device of copper indium gallium selenium solar cell substrate, satisfies the selenizing and the vulcanization reaction needs of substrate in the copper indium gallium selenium solar cell production process.
For realizing above-mentioned purpose; The selenizing of the copper indium gallium selenium solar cell substrate of the utility model and vulcanization reaction device; Comprise: outer chamber, it is provided with outer chamber inlet and the outer chamber outlet that is used for the substrate turnover, is respectively equipped with jet disrupter in said outer chamber inlet and the outer chamber outlet; Be positioned at intravital at least two reaction cavities of said exocoel; Each said reaction cavity is provided with reaction cavity inlet and the reaction cavity outlet that is used for the substrate turnover; Be respectively equipped with jet disrupter in said reaction cavity inlet and the reaction cavity outlet, be respectively equipped with selenium vapour pipe or sulphur vapour pipe on the said reaction cavity; Place the outer a plurality of well heaters of said reaction cavity; Be coated on the outer heat-reflecting layer of said reaction cavity, said well heater places between said reaction cavity and the heat-reflecting layer; And carry substrate to pass in and out the transfer roller of said reaction cavity.
Said outer chamber is provided with bleeding point.
Between two adjacent reaction cavities, be provided with a plurality of secondary heaters, said a plurality of secondary heaters are provided with second heat-reflecting layer outward.
Adopt the selenizing and the vulcanization reaction device of the copper indium gallium selenium solar cell substrate of the utility model, can realize the selenizing and the vulcanization reaction of substrate, guarantee the processing requirement of selenizing and vulcanization reaction.Adopt the utility model, can also only be used as selenizing or vulcanization reaction.
Description of drawings
Fig. 1 is the selenizing and the vulcanization reaction schematic representation of apparatus of the copper indium gallium selenium solar cell substrate of the utility model.
Embodiment
Referring to Fig. 1, the selenizing and the vulcanization reaction device of the copper indium gallium selenium solar cell substrate of the utility model comprise:
Outer chamber 10, it is provided with outer chamber inlet and the outer chamber outlet that is used for substrate 100 turnover, is respectively equipped with jet disrupter 11,12 in said outer chamber inlet and the outer chamber outlet;
Be positioned at least two reaction cavities 20 of said outer chamber 10; Each said reaction cavity 20 is provided with reaction cavity inlet and the reaction cavity outlet that is used for substrate 100 turnover; Be respectively equipped with jet disrupter 21,22 in said reaction cavity inlet and the reaction cavity outlet, be respectively equipped with selenium vapour pipe 40 or sulphur vapour pipe 50 on the said reaction cavity 20;
Place a plurality of well heaters 23 outside the said reaction cavity 20;
Be coated on the heat-reflecting layer 30 outside the said reaction cavity 20, said well heater 23 places between said reaction cavity 20 and the heat-reflecting layer 30; And
Carry the transfer roller 101 of the said reaction cavity 20 of substrate 100 turnover.
Said transfer roller 101 can be made up of a plurality of rollers or roller, and transfer roller 101 passes said outer chamber 10 and reaction cavity 20.Transfer roller 101 carries substrate 100 to get into a reaction cavity 20 through outer chamber inlet and reaction cavity inlet; After accomplishing selenizing or vulcanization reaction; Carry out selenizing or vulcanization reaction through getting into an adjacent reaction cavity 20 again after the reaction cavity outlet; After accomplishing the reaction of all reaction cavities again, export out through reaction cavity outlet and outer chamber.Outer chamber 10 is made up of metal, like stainless steel, carbon steel etc.
Connect selenium vapour pipe 40 or sulphur vapour pipe 50 on each reaction cavity 20 respectively, so that substrate 100 carries out selenizing or vulcanization reaction in corresponding reaction cavity 20.Concrete that reaction cavity connects selenium vapour pipe 40 or sulphur vapour pipe 50, can set according to the processing requirement of sun power substrate 100.
Said selenium vapour pipe 40 is connected a selenium vapour source 42 and sulphur vapour source 52 respectively with sulphur vapour pipe 50, is respectively applied for and in reaction cavity 20, carries selenium steam and sulphur steam.Be respectively equipped with a variable valve 41,51 on said selenium vapour pipe 40 and the sulphur vapour pipe 50, the adjustable flow perhaps can be closed corresponding variable valve when needs stop in reaction cavity 20, carrying selenium steam or sulphur steam.
Said jet disrupter the 11,12,21, the 22nd is discharged under certain pressure and flow by certain gas; Form the pressure air film; Thereby the physical construction that stops extraneous gas to flow into; The jet disrupter 11,12,21,22 of the utility model adopts argon gas or other rare gas element, also can adopt nitrogen, and rare gas element or nitrogen get into jet disrupter 11,12,21,22 through reducing valve and flow-controlling meter; Effluent air has hindered extraneous gas and has entered into reaction cavity 20 from jet disrupter 11,12,21,22, thereby has guaranteed the purity requirement of process environments.
For guaranteeing that substrate 100 carries out keeping between technology and the technology handing-over temperature of processing requirement at adjacent two reaction cavities 20; Can not that basic 100 temperature are low excessively; Between two adjacent reaction cavities 20, be provided with a plurality of secondary heaters 230, said a plurality of secondary heater 230 outer second heat-reflecting layers 300 that are provided with.Be transported to two substrates 100 between the reaction cavity 20 through 230 pairs of secondary heaters and heat, and come reflecting heat, improve thermo-efficiency through second heat-reflecting layer 300.Said secondary heater 230 can be resistance heating wire, infrared lamp etc.
What represent among Fig. 1 is that reaction cavity 20 is two a situation, and two reaction cavities 20 connect selenium vapour pipe 40 and sulphur vapour pipe 50 respectively.Below in conjunction with Fig. 1 sun power selenizing and sulfurized process are described.
In the production process of solar cell; After forming copper indium gallium film preformed layer on the substrate 100; Copper indium gallium film preformed layer faces up; Through conveyer 101 substrate 100 is delivered into first reaction cavity 20, this moment outer chamber 10 with reaction cavity 20 in preferably keep negative pressure, keep in said outer chamber 10 and the reaction cavity 20 negative pressure at 0.5KPa between the 100KPa.For keeping negative pressure, said outer chamber 10 is provided with the bleeding point 13 that links to each other with the vacuum fan (not shown).Outer chamber 10 is bled through bleeding point 13 through vacuum fan, forms negative pressure, and this moment, two reaction cavities 20 also formed negative pressure.
, promptly heated substrate 100 after getting into first reaction cavity 20 by reaction cavity 20 outside electrothermal devices 23.Well heater 23 can be resistance heating wire, infrared lamp etc.; The material of reaction cavity 20 can adopt metal such as stainless steel, carbon steel, aluminium etc.; Also can adopt non-metallic material such as graphite, pottery, well heater 23 heats the substrate 100 in the reaction cavity 20 through radiation and convection type.Certainly, reaction cavity 20 also can adopt transparent silica glass material to make, and can adopt the infrared lamp heating this moment, and ir radiation passes the reaction cavity 20 direct heating substrates 100 that silica glass is processed.Tamper 30 can make the heat of well heater 23 concentrate heated substrate, improves thermo-efficiency.
When substrate 100 is heated to a certain design temperature between 350 ℃ and 550 ℃; Open the variable valve 41 on the selenium steam pipe 40, the selenium steam in the selenium steam source 42 gets in the reaction cavity 20, and substrate 100 retains for some time in reaction cavity 20; Carry out selenylation reaction; This moment substrate 100 in reaction cavity 20 on transfer roller 101, can stop motionless, or reciprocal back and forth, or straight ahead.According to processing requirement, the variable valve 41 on the adjustable selenium steam pipe 40 is regulated the selenium steam flow.
Certain hour before selenylation reaction technology is accomplished is closed the variable valve 41 on the selenium steam pipe 40, lets residual selenium steam reaction finish.After reaction finished, substrate 100 exported out from the reaction chamber of first reaction cavity 20, and got into from the reaction chamber inlet of next reaction cavity 20.In the time of between two reaction cavities 20, heat the temperature that keeps or regulate substrate 100 through secondary heater 230.
When substrate gets into second reaction cavity; When substrate 100 is heated to a certain design temperature between 450 ℃ and 600 ℃, open the variable valve 51 on the sulfur vapor pipe 50, the sulfur vapor in the sulfur vapor source 52 gets into reaction cavity 20; Carry out vulcanization reaction; This moment substrate 100 in reaction cavity 20 on transfer roller 101, can stop motionless, or reciprocal back and forth, or straight ahead.According to processing requirement, the variable valve 51 on the adjustable sulfur vapor pipe 50 is regulated the sulfur vapor flow.
Certain hour before vulcanization reaction technology is accomplished is closed the variable valve 51 on the sulfur vapor pipe 50, lets the residual sulphur vapor reaction finish.
After above-mentioned vulcanization reaction technology was accomplished, substrate 100 temperature dropped to about 350 degree, and substrate 10 is exported from reaction cavity 20, outer chamber 10 through transfer roller 101, and selenizing and vulcanization reaction technology finish.
If in the time of also will carrying out repeatedly selenizing or vulcanization reaction according to arts demand to substrate 100; A plurality of reaction cavities 20 can be set; And on corresponding reaction cavity 20, connect selenium vapour pipe 40 or sulphur vapour pipe 50, and can realize repeatedly selenizing or vulcanization reaction with reference to said process.
Claims (6)
1. the selenizing of a copper indium gallium selenium solar cell substrate and vulcanization reaction device is characterized in that, comprising:
Outer chamber (10), it is provided with outer chamber inlet and the outer chamber outlet that is used for substrate (100) turnover, is respectively equipped with jet disrupter (11,12) in said outer chamber inlet and the outer chamber outlet;
Be positioned at least two reaction cavities (20) of said outer chamber (10); Each said reaction cavity (20) is provided with reaction cavity inlet and the reaction cavity outlet that is used for substrate (100) turnover; Be respectively equipped with jet disrupter (21,22) in said reaction cavity inlet and the reaction cavity outlet, be respectively equipped with selenium vapour pipe (40) or sulphur vapour pipe (50) on the said reaction cavity (20);
Place the outer a plurality of well heaters (23) of said reaction cavity (20);
Be coated on the outer heat-reflecting layer (30) of said reaction cavity (20), said well heater (23) places between said reaction cavity (20) and the heat-reflecting layer (30); And
Carry substrate (100) to pass in and out the transfer roller (101) of said reaction cavity (20).
2. the selenizing of copper indium gallium selenium solar cell substrate as claimed in claim 1 and vulcanization reaction device is characterized in that, said outer chamber (10) is provided with bleeding point (13).
3. the selenizing of copper indium gallium selenium solar cell substrate as claimed in claim 1 and vulcanization reaction device; It is characterized in that; Between adjacent two reaction cavities (20), be provided with a plurality of secondary heaters (230), outer second heat-reflecting layer (300) that is provided with of said a plurality of secondary heaters (230).
4. the selenizing of copper indium gallium selenium solar cell substrate as claimed in claim 3 and vulcanization reaction device is characterized in that, said secondary heater (230) is resistance heating wire or infrared lamp.
5. like the selenizing and the vulcanization reaction device of each described copper indium gallium selenium solar cell substrate in the claim 1 to 3, it is characterized in that said well heater (23) is resistance heating wire or infrared lamp.
6. like the selenizing and the vulcanization reaction device of each described copper indium gallium selenium solar cell substrate in the claim 1 to 3; It is characterized in that said reaction cavity (20) adopts wherein a kind of material of stainless steel, carbon steel, aluminium, graphite, silica glass and pottery to process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201347294U CN202576559U (en) | 2012-04-01 | 2012-04-01 | Selenization and vulcanization reaction device for copper indium gallium selenide solar cell substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201347294U CN202576559U (en) | 2012-04-01 | 2012-04-01 | Selenization and vulcanization reaction device for copper indium gallium selenide solar cell substrate |
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| CN202576559U true CN202576559U (en) | 2012-12-05 |
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| CN2012201347294U Expired - Fee Related CN202576559U (en) | 2012-04-01 | 2012-04-01 | Selenization and vulcanization reaction device for copper indium gallium selenide solar cell substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361627A (en) * | 2012-04-01 | 2013-10-23 | 英莱新能（上海）有限公司 | Copper-indium-gallium-selenium solar cell substrate selenization and sulfurization reactor |
-
2012
- 2012-04-01 CN CN2012201347294U patent/CN202576559U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361627A (en) * | 2012-04-01 | 2013-10-23 | 英莱新能（上海）有限公司 | Copper-indium-gallium-selenium solar cell substrate selenization and sulfurization reactor |
| CN103361627B (en) * | 2012-04-01 | 2015-09-09 | 英莱新能（上海）有限公司 | The selenizing of copper indium gallium selenium solar cell substrate and vulcanization reaction device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121205 Termination date: 20150401 |
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| EXPY | Termination of patent right or utility model |