CN202558964U - Electrode device for sapphire growth monocrystal crystal bar - Google Patents
Electrode device for sapphire growth monocrystal crystal bar Download PDFInfo
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- CN202558964U CN202558964U CN2012201799997U CN201220179999U CN202558964U CN 202558964 U CN202558964 U CN 202558964U CN 2012201799997 U CN2012201799997 U CN 2012201799997U CN 201220179999 U CN201220179999 U CN 201220179999U CN 202558964 U CN202558964 U CN 202558964U
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Abstract
Provided is an electrode device for a sapphire growth monocrystal crystal bar. An aluminium oxide sapphire monocrystal crystal bar growth furnace water-cooling electrode device is used for providing thermal fields required by crystal growth inside a growth furnace, electrodes are connected with a water inlet pipe and a water outlet pipe, the upper two ports are water outlets, the lower ports are water inlets, but the existing electrodes are complex in structure and difficult to install and maintain, meanwhile the formed thermal fields are not symmetrical enough along the axial direction, and the optimum condition of the crystal growth can not be met. The electrode device for the sapphire growth monocrystal crystal bar comprises two electrodes of the growth furnace, wherein two hollow annular conductive bodies are arranged up and down to constitute the two electrodes. One of the electrodes (2) is in welded connection with a vertical type hollow conductive long tubular column to constitute the water inlet (1), the other one of the electrodes is in welded connection with a vertical type hollow conductive short tubular column to constitute the water outlet (3), the water outlet is connected with an electrode joint cover plate (4), and the water inlet is connected with another electrode joint cover plate. The electrode device is used for the sapphire growth monocrystal crystal bar.
Description
Technical field:
the utility model relates to a kind of growing sapphire monocrystalline crystal bar and uses electrode device.
Background technology:
Al2O3 sapphire single-crystal boule growth stove water cooled electrode device is used for reactors provides crystal growth required thermal field; Electrode connects water inlet pipe and rising pipe; Above two interfaces be water outlet, below interface be water-in, but existing electrode is because complex structure is difficult for installation and maintenance; The thermal field that forms simultaneously is axially symmetrical inadequately, can't satisfy the top condition of crystal growth.
Summary of the invention:
The purpose of
the utility model provides a kind of growing sapphire monocrystalline crystal bar convenient for installation and maintenance and uses electrode device.
Above-mentioned purpose realizes through following technical scheme:
a kind of growing sapphire monocrystalline crystal bar is used electrode device; Its composition comprises: being arranged above and below by the ring-type electrical conductor of two hollows constitutes two electrodes of reactors; Described electrode welding vertical type hollow conduction long string constitutes water-in; Described electrode welding vertical type hollow conduction short string constitutes water outlet, and described water outlet connection electrodes connects shrouding disc, and described water-in connection electrodes connects shrouding disc.
described growing sapphire monocrystalline crystal bar is used electrode device, and described water-in connects with described electrode that groove communicates under the shrouding disc, and described water outlet connects with described electrode that groove communicates under the shrouding disc.
described growing sapphire monocrystalline crystal bar is used electrode device, and described electrode connects under the shrouding disc groove to be made up of through spatial disposition isolated heating tungsten filament, and described electrode connects the ring that groove under the shrouding disc connects described electrode.
Beneficial effect:
1. the water cooled electrode that adopts of the utility model have convenient for installation and maintenancely, and the thermal field of formation is symmetry fully axially, to form best crystal growth condition.
2. the electrode structure that adopts of the utility model can produce axial symmetrical thermal field, and the access node structure are simple and reliable owing to have symmetry, and the top condition of sapphire crystal growth can be provided.
Description of drawings:
accompanying drawing 1 is the structural representation of this product.
accompanying drawing 2 is vertical views of accompanying drawing 1.
Embodiment:
Embodiment 1:
a kind of growing sapphire monocrystalline crystal bar is used electrode device; Its composition comprises: being arranged above and below by the ring-type electrical conductor of two hollows constitutes two electrodes of reactors; Described electrode 2 welding vertical type hollow conduction long strings constitute water-in 1; Described electrode welding vertical type hollow conduction short string constitutes water outlet 3, and described water outlet connection electrodes connects shrouding disc 4, and described water-in connection electrodes connects shrouding disc.The material that connects shrouding disc is a red copper.
Embodiment 2:
embodiment 1 described growing sapphire monocrystalline crystal bar is used electrode device, and described water-in connects with described electrode that groove communicates under the shrouding disc, and described water outlet connects with described electrode that groove communicates under the shrouding disc.
Embodiment 3:
Embodiment 4:
the described growing sapphire monocrystalline of the foregoing description crystal bar is used electrode device; The ring-type electrical conductor of two hollows of employing is arranged above and below and constitutes two electrodes of reactors; Two vertical type hollow conductions of welding tubing string on each electrode; Be used to into water and water outlet; Intake-outlet connects with two electrodes respectively that groove communicates under the shrouding disc, and wherein to connect the shrouding disc groove be isolated heating tungsten filament is installed on respectively on the ring of two hollow water cooled electrodes up and down through two after the spatial disposition for two electrodes, provides crystal growth needed thermal field after the energising; This water cooled electrode has convenient for installation and maintenance, and the thermal field of formation is axially symmetrical fully, to form best crystal growth condition.
Working process:
The ring-type electrical conductor of two hollows of
employing is arranged above and below and constitutes two electrodes of reactors; Two vertical type hollow conductions of welding tubing string on each electrode; Be used to into water and water outlet; Water-in, water outlet connect with two electrodes respectively that groove communicates under the shrouding disc, and wherein to connect the shrouding disc groove be isolated heating tungsten filament is installed on respectively on the ring of two hollow water cooled electrodes up and down through two after the spatial disposition for two electrodes.
Claims (3)
1. a growing sapphire monocrystalline crystal bar is used electrode device; Its composition comprises: being arranged above and below by the ring-type electrical conductor of two hollows constitutes two electrodes of reactors; It is characterized in that: described electrode welding vertical type hollow conduction long string constitutes water-in; Described electrode welding vertical type hollow conduction short string constitutes water outlet, and described water outlet connection electrodes connects shrouding disc, and described water-in connection electrodes connects shrouding disc.
2. growing sapphire monocrystalline crystal bar according to claim 1 is used electrode device, it is characterized in that: described water-in connects with described electrode that groove communicates under the shrouding disc, and described water outlet connects with described electrode that groove communicates under the shrouding disc.
3. growing sapphire monocrystalline crystal bar according to claim 1 and 2 is used electrode device, it is characterized in that: described electrode connects under the shrouding disc groove to be made up of through spatial disposition isolated heating tungsten filament, and described electrode connects the ring that groove under the shrouding disc connects described electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201799997U CN202558964U (en) | 2012-04-26 | 2012-04-26 | Electrode device for sapphire growth monocrystal crystal bar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201799997U CN202558964U (en) | 2012-04-26 | 2012-04-26 | Electrode device for sapphire growth monocrystal crystal bar |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202558964U true CN202558964U (en) | 2012-11-28 |
Family
ID=47208640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012201799997U Expired - Fee Related CN202558964U (en) | 2012-04-26 | 2012-04-26 | Electrode device for sapphire growth monocrystal crystal bar |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202558964U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409794A (en) * | 2013-08-16 | 2013-11-27 | 哈尔滨工业大学 | Sapphire single-crystal resistor growth furnace |
-
2012
- 2012-04-26 CN CN2012201799997U patent/CN202558964U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409794A (en) * | 2013-08-16 | 2013-11-27 | 哈尔滨工业大学 | Sapphire single-crystal resistor growth furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HARBIN XINLI OPTOELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HARBIN JINGSHI PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20131230 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 150010 HARBIN, HEILONGJIANG PROVINCE TO: 150000 HARBIN, HEILONGJIANG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131230 Address after: 150000 No. 21, East Lake Road, Yingbin Road, Harbin hi tech Industrial Development Zone, Heilongjiang, China Patentee after: Harbin Xinli Optoelectronic Technology Co., Ltd. Address before: 150010, Harbin District, Heilongjiang hi tech Zone, Yingbin Road, East Lake street, North Road, Qinling Mountains Road, 200 meters Patentee before: Harbin Jingshi Photoelectric Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121128 Termination date: 20160426 |