CN202523815U - Terahertz wave high-speed switching device - Google Patents
Terahertz wave high-speed switching device Download PDFInfo
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- CN202523815U CN202523815U CN2011205382521U CN201120538252U CN202523815U CN 202523815 U CN202523815 U CN 202523815U CN 2011205382521 U CN2011205382521 U CN 2011205382521U CN 201120538252 U CN201120538252 U CN 201120538252U CN 202523815 U CN202523815 U CN 202523815U
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- thz wave
- prism
- terahertz wave
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- high resistivity
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Abstract
The present utility model discloses a high-speed terahertz wave switching device. A metal thin film is arranged on a polymer, the polymer and the metal thin film are all cuboids, a semiterete glass prism is arranged on the metal thin film, the tangent plane of the semiterete high-resistance silicon prism is a rectangle, a rectangle of the lower bottom surface of the semiterete high-resistance silicon prism is parallel with the cuboid of the metal thin film and has a same size with the metal thin film, laser emitted by a laser emitter is emitted to the polymer through an additional laser input end, terahertz wave is input from a terahertz wave input end of one side surface of the semiterete high-resistance silicon prism and enters into the semiterete high-resistance silicon prism, then the terahertz wave is output from a terahertz wave output end of the other side surface of the semiterete high-resistance silicon prism after being reflected, and the output terahertz wave is detected by a terahertz wave detector of the end part of the terahertz wave output end. The device is compact in structure, fast in response speed, small in loss and low in manufacturing costs, and can satisfy application needs of terahertz wave imaging, terahertz wave communication, terahertz wave space astronomy and other fields.
Description
Technical field
The utility model relates to the THz wave applied technical field, is specifically related to a kind of terahertz wave switch device.
Background technology
Terahertz (THz, 1THz=10
12Hz) ripple be meant frequency from 0.1THz to 10THz between millimeter wave and infrared light the electromagnetic spectrum of spectral range zone.Terahertz time-domain spectroscopic technology is a kind of novel spectral measurement methods that has grown up since the eighties in 20th century.It with terahertz emission as detection source; Utilize the electro optic sampling or the photoconductive method of sampling directly to write down the amplitude time waveform of terahertz emission electric field; Obtain the spectral distribution of measuring-signal amplitude and phase place through Fourier transform, and then obtain material in information such as the absorption of terahertz wave band and chromatic dispersions.In recent years, terahertz emission becomes a kind of effective safety inspection means with its unique character.Terahertz emission has its distinctive advantage in the safety check field: (1) transient state property: the typical pulse-widths of terahertz pulse can be carried out time-resolved research to various materials (comprising liquid, semiconductor, superconductor, biological sample etc.) easily at picosecond magnitude.(2) low energy property: the energy of Terahertz photon has only the milli electron-volt, compares with X ray, can not destroy material to be detected because of ionization.(3) penetrability: terahertz emission has very strong penetration power for packaging material such as dielectric substance and plastics, cartons.In addition, Terahertz Technology at communication, medical diagnosis, health detection, environment control, chemistry and bio-sensing, reach field such as quality monitoring and all have a wide range of applications.Current Terahertz Technology becomes the focus of broad research in the world wide gradually, in the world about research institution's emerge in multitude of THz wave, and has obtained a lot of achievements in research.
Because the problem of Terahertz wave source is failed fine solution in the long duration, the THz wave science and technology development is restricted, thereby makes its application potential fail to bring into play.Multiple Terahertz wave source and checkout gear have successfully been developed at present in the world; Make that the THz wave technology obtains in fields such as imaging, medical diagnosis, radio communication, space astronomys to use gradually; Yet these systems need carry out switch control to THz wave; But existing THz wave switch exists, and switching response speed is slow, complex structure, making difficulty, deficiency such as cost an arm and a leg, and therefore is necessary very much to research and develop a kind of simple in structure, response speed is fast, cost of manufacture is low THz wave speed-sensitive switch.
Summary of the invention
The purpose of the utility model is the deficiency that overcomes prior art, and a kind of THz wave high-speed switching arrangement is provided.
Terahertz wave switch device comprises THz wave input, THz wave output, terahertz wave detector, generating laser, adds the laser input, half-cylindrical High Resistivity Si prism, metallic film, polymer; On polymer, be provided with metallic film; Polymer and metallic film are cuboid; Metallic film is provided with half-cylindrical glass prism; The tangent plane of half-cylindrical High Resistivity Si prism is a rectangle, and the rectangle of half-cylindrical High Resistivity Si prism bottom surface and equal and opposite in direction parallel with the metallic film cuboid, generating laser send laser and inject polymer through adding the laser input; THz wave is from the THz wave input input of half-cylindrical High Resistivity Si prism one side; Get into half-cylindrical High Resistivity Si prism, after the THz wave output output of half-cylindrical High Resistivity Si prism another side, survey the THz wave of output by the terahertz wave detector of THz wave output end after reflection.
The radius of described half-cylindrical glass prism is 10mm ~ 20mm.The thickness of described metallic film is 50nm ~ 60nm.The thickness of described polymer is 2 μ m ~ 20 μ m.
THz wave speed-sensitive switch method is when the laser input does not have the laser of adding; THz wave with 60 ° of angle incidents is imported from the THz wave input; Incide half-cylindrical High Resistivity Si prism side from half-cylindrical High Resistivity Si prism one flank side surface; Export the THz wave output to from the offside reflection of half-cylindrical High Resistivity Si prism another side, this moment, terahertz wave detector detected the THz wave of output; When adding the laser input when adding laser; The polymer dielectric constant changes; Resonance guided mode frequency produces and changes, and after half-cylindrical High Resistivity Si prism one flank side surface incident, exports the weakened of THz wave second output with the THz wave of 60 ° of angle incidents to from the offside reflection of half-cylindrical High Resistivity Si prism another side; At this moment, terahertz wave detector can not detect the THz wave of output.Owing to utilize to add the time that laser controlling polymer dielectric constant changes and to reach picosecond magnitude, therefore can realize speed-sensitive switch control to THz wave through this structure.
The THz wave high-speed switching arrangement of the utility model has compact conformation, and response speed is fast, and cost of manufacture is low, satisfies the requirement of using in fields such as THz wave imaging, THz wave communication, THz wave space astronomys.
Description of drawings
Fig. 1 is the planar structure sketch map of THz wave high-speed switching arrangement;
Fig. 2 is the perspective view of THz wave high-speed switching arrangement;
Fig. 3 is a High Resistivity Si prism structure sketch map;
Fig. 4 does not have to add laser when injecting, the guided mode figure of THz wave speed-sensitive switch structure;
Fig. 5 adds laser when injecting, the guided mode figure of THz wave speed-sensitive switch structure;
Fig. 6 does not have to add laser when injecting, the THz wave stable state transmission sketch map in the THz wave speed-sensitive switch structure;
Fig. 7 adds laser when injecting, the THz wave stable state transmission sketch map in the THz wave speed-sensitive switch structure.
Embodiment
Shown in Fig. 1 ~ 3; The THz wave speed-sensitive switch is characterized in that THz wave input 1, THz wave output 2, terahertz wave detector 3, generating laser 4, adds laser input 5, half-cylindrical High Resistivity Si prism 6, metallic film 7, polymer 8; On polymer 8, be provided with metallic film 7; Polymer 8 is cuboid with metallic film 7; Metallic film 7 is provided with half-cylindrical glass prism 6; The tangent plane of half-cylindrical High Resistivity Si prism 6 is a rectangle, the rectangle of half-cylindrical High Resistivity Si prism 6 bottom surfaces and the parallel and equal and opposite in direction of metallic film 7 cuboids, and generating laser 4 sends laser and injects polymer 8 through adding laser input 5; THz wave is from THz wave input 1 input of half-cylindrical High Resistivity Si prism 6 one sides; Get into half-cylindrical High Resistivity Si prism 6, after THz wave output 2 outputs of half-cylindrical High Resistivity Si prism 6 another sides, survey the THz wave of output by the terahertz wave detector 3 of THz wave output 2 ends after reflection.
Described half-cylindrical High Resistivity Si prism 6 radiuses are 10mm ~ 20mm.Described metallic film 7 thickness are 50nm ~ 60nm.Described polymer 8 thickness are 2 μ m ~ 20 μ m.
THz wave speed-sensitive switch method is:
The radius of half-cylindrical High Resistivity Si prism is 10mm; Metallic film material adopts silver, and thickness is 50nm; Polymeric material adopts the C513 polystyrene doped, and thickness is 10 μ m.When adding the no laser of laser input 5; THz wave with 60 ° of angle incidents is imported from THz wave input 1; Incide half-cylindrical High Resistivity Si prism 6 sides from half-cylindrical High Resistivity Si prism 6 one sides; Reflection exports THz wave output 2 to from half-cylindrical High Resistivity Si prism 6 another sides, and this moment, terahertz wave detector 3 detected the THz wave of output; When adding laser input 5 when adding laser; Polymer 8 dielectric constants change; Resonance guided mode frequency produces and changes, and after half-cylindrical High Resistivity Si prism 6 one side incidents, reflection exports the weakened of THz wave second output 5 to from half-cylindrical High Resistivity Si prism 6 another sides with the THz wave of 60 ° of angle incidents; At this moment, terahertz wave detector 3 can not detect the THz wave of output.Owing to utilize to add the time that laser controlling polymer 8 dielectric constants change and to reach picosecond magnitude, therefore can realize speed-sensitive switch control to THz wave through this structure.
0.3THz the THz wave switch of frequency:
The BWOs that selects Microtech to sell, wherein the backward wave tube model is elected QS2-500 (frequency is tunable in the 0.1-0.5THz frequency range) as.The THz wave frequency of selecting Terahertz communication to use is 0.3THz.The radius of the half-cylindrical High Resistivity Si prism of design is 10mm; Metallic film material adopts silver, and thickness is 50nm; Polymeric material adopts the C513 polystyrene doped, and thickness is 10 μ m.When adding the no laser of laser input 5; THz wave with 60 ° of angle incidents is imported from THz wave input 1; Incide half-cylindrical High Resistivity Si prism 6 sides from half-cylindrical High Resistivity Si prism 6 one sides; Reflection exports THz wave output 2 to from half-cylindrical High Resistivity Si prism 6 another sides, and this moment, terahertz wave detector 3 detected the THz wave of output; When adding laser input 5 when adding laser; Polymer 8 dielectric constants change; Resonance guided mode frequency produces and changes, and after half-cylindrical High Resistivity Si prism 6 one side incidents, reflection exports the weakened of THz wave second output 5 to from half-cylindrical High Resistivity Si prism 6 another sides with the THz wave of 60 ° of angle incidents; At this moment, terahertz wave detector 3 can not detect the THz wave of output.The nothing that obtains adds laser when injecting, THz wave stable state transmission situation such as accompanying drawing 6 in the THz wave speed-sensitive switch structure; Add laser when injecting, THz wave stable state transmission situation such as accompanying drawing 7 in the THz wave speed-sensitive switch structure.This structure can realize the switch control rate of THz wave is reached picosecond magnitude.
Claims (4)
1. a THz wave high-speed switching arrangement is characterized in that comprising THz wave input (1), THz wave output (2), terahertz wave detector (3), generating laser (4), adds laser input (5), half-cylindrical High Resistivity Si prism (6), metallic film (7), polymer (8); On polymer (8), be provided with metallic film (7); Polymer (8) and metallic film (7) are cuboid; Metallic film (7) is provided with half-cylindrical glass prism (6); The tangent plane of half-cylindrical High Resistivity Si prism (6) is a rectangle; The rectangle and the parallel and equal and opposite in direction of metallic film (7) cuboid of half-cylindrical High Resistivity Si prism (6) bottom surface; Generating laser (4) sends laser and injects polymer (8) through adding laser input (5), and THz wave gets into half-cylindrical High Resistivity Si prism (6) from THz wave input (1) input of half-cylindrical High Resistivity Si prism (6) one sides; After THz wave output (2) output of half-cylindrical High Resistivity Si prism (6) another side, survey the THz wave of output by the terahertz wave detector (3) of THz wave output (2) end after reflection.
2. a kind of THz wave high-speed switching arrangement as claimed in claim 1, the radius that it is characterized in that described half-cylindrical High Resistivity Si prism (6) is 10 ~ 20mm.
3. a kind of THz wave high-speed switching arrangement as claimed in claim 1, the thickness that it is characterized in that described metallic film (7) is 50 ~ 60nm.
4. a kind of THz wave high-speed switching arrangement as claimed in claim 1, the thickness that it is characterized in that described polymer (8) are 2 ~ 20 μ m.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011205382521U CN202523815U (en) | 2011-12-21 | 2011-12-21 | Terahertz wave high-speed switching device |
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| CN2011205382521U CN202523815U (en) | 2011-12-21 | 2011-12-21 | Terahertz wave high-speed switching device |
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| CN202523815U true CN202523815U (en) | 2012-11-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495508A (en) * | 2011-12-21 | 2012-06-13 | 中国计量学院 | High-speed THz switching device and method thereof |
| CN110661107A (en) * | 2019-11-13 | 2020-01-07 | 福州大学 | Tunable grating metamaterial terahertz wave absorber based on PE prism coupling and method |
-
2011
- 2011-12-21 CN CN2011205382521U patent/CN202523815U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495508A (en) * | 2011-12-21 | 2012-06-13 | 中国计量学院 | High-speed THz switching device and method thereof |
| CN110661107A (en) * | 2019-11-13 | 2020-01-07 | 福州大学 | Tunable grating metamaterial terahertz wave absorber based on PE prism coupling and method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121107 Termination date: 20121221 |