CN202470750U - Crucible with separating plate - Google Patents
Crucible with separating plate Download PDFInfo
- Publication number
- CN202470750U CN202470750U CN201220052493XU CN201220052493U CN202470750U CN 202470750 U CN202470750 U CN 202470750U CN 201220052493X U CN201220052493X U CN 201220052493XU CN 201220052493 U CN201220052493 U CN 201220052493U CN 202470750 U CN202470750 U CN 202470750U
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- China
- Prior art keywords
- crucible
- separating plate
- graphite
- utility
- model
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to a crucible with a separating plate, which belongs to the crucible. A graphite separating plate is fixedly connected with the inner wall of a graphite crucible body. The crucible with the separating plate has advantages that the structure is novel, the inside of the crucible is divided, so that the heat field is uniform, the uniformity of the material is good, and the rate of the finished product is greatly improved.
Description
Technical field
The utility model belongs to crucible, refers in particular to a kind of crucible with dividing plate.
Background technology
The employed crucible of conventional high-temperature sintering is a tubular, and the crucible radial symmetry gradient is big, heating is uneven, it is not thorough to dissolve, and only is applicable to the production of common crystal, can not grow the crystal of special shape, is difficult to meet higher specification requirement.
Summary of the invention
The utility model provides a kind of crucible with dividing plate, to solve the problem that common crucible can not grow the special shape crystal.
The technical scheme of the utility model is: graphite septum is fixedly connected with the inwall of graphite crucible body.
The advantage of the utility model is: novel structure, and be divided in the crucible and make thermal field even, the good uniformity of material, yield rate improves a lot.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is that the A of Fig. 1 is to sketch map.
The specific embodiment
Press the distance and the quantity of the thickness decision graphite septum of required crystal, raw material are added in the graphite septum gap, raw material are processed through the mode that heats from the graphite crucible external, thus the crystal thickness that obtains requiring.
Claims (1)
1. crucible with dividing plate, it is characterized in that: graphite septum is fixedly connected with the inwall of graphite crucible body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220052493XU CN202470750U (en) | 2012-02-18 | 2012-02-18 | Crucible with separating plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220052493XU CN202470750U (en) | 2012-02-18 | 2012-02-18 | Crucible with separating plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202470750U true CN202470750U (en) | 2012-10-03 |
Family
ID=46918904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220052493XU Expired - Fee Related CN202470750U (en) | 2012-02-18 | 2012-02-18 | Crucible with separating plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202470750U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102899718A (en) * | 2012-10-25 | 2013-01-30 | 西安理工大学 | Silicon carbide crystal growth method for increasing crystal growth rate |
| CN102912444A (en) * | 2012-10-25 | 2013-02-06 | 西安理工大学 | Silicon carbide crystal growth crucible for increasing utilization rate of power sources |
| CN104843675A (en) * | 2015-06-10 | 2015-08-19 | 四川都江堰西马炭素有限公司 | Powder purifying method and powder purifying apparatus |
| CN105543965A (en) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | Crucible structure used for silicon carbide single crystal growth |
-
2012
- 2012-02-18 CN CN201220052493XU patent/CN202470750U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102899718A (en) * | 2012-10-25 | 2013-01-30 | 西安理工大学 | Silicon carbide crystal growth method for increasing crystal growth rate |
| CN102912444A (en) * | 2012-10-25 | 2013-02-06 | 西安理工大学 | Silicon carbide crystal growth crucible for increasing utilization rate of power sources |
| CN102912444B (en) * | 2012-10-25 | 2015-06-24 | 西安理工大学 | Silicon carbide crystal growth crucible for increasing utilization rate of power sources |
| CN102899718B (en) * | 2012-10-25 | 2015-07-29 | 西安理工大学 | For improving the Silicon carbide crystal growth method of crystal growth rate |
| CN104843675A (en) * | 2015-06-10 | 2015-08-19 | 四川都江堰西马炭素有限公司 | Powder purifying method and powder purifying apparatus |
| CN105543965A (en) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | Crucible structure used for silicon carbide single crystal growth |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121003 Termination date: 20150218 |
|
| EXPY | Termination of patent right or utility model |