CN202322710U - Composite abrasive for chemical-mechanical polishing solution - Google Patents
Composite abrasive for chemical-mechanical polishing solution Download PDFInfo
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- CN202322710U CN202322710U CN2011204758481U CN201120475848U CN202322710U CN 202322710 U CN202322710 U CN 202322710U CN 2011204758481 U CN2011204758481 U CN 2011204758481U CN 201120475848 U CN201120475848 U CN 201120475848U CN 202322710 U CN202322710 U CN 202322710U
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- mechanical polishing
- abrasive
- compounded abrasive
- composite abrasive
- polishing
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Abstract
The utility model relates to a composite abrasive for a chemical-mechanical polishing solution. The composite abrasive contains a polystyrene inner core and an amorphous silicon dioxide shell layer coated outside the polystyrene inner core, wherein the particle size of the composite abrasive is 100-500nm. The composite abrasive can be applied to the chemical-mechanical polishing solution, especially the polishing solution of sapphire substrate materials, thus being conductive to improving the polishing rate and reducing the surface roughness after polishing.
Description
Technical field
The utility model belongs to the chemical mechanical polishing liquid field, is specifically related to the hud typed compounded abrasive of a kind of polystyrene/silica dioxide.
Background technology
Sapphire is claimed white stone again, and molecular formula is Al
2O
3, be the common name of alumina single crystal material.Sapphire has excellent chemicalstability, optical transparence and desirable mechanical property, and anti-chemistry corrosion, and wear resistance good (Mohs' hardness can reach 9 grades) is widely used in fields such as industry, national defence, scientific research.Because it is sapphire has good thermal property, electrical specification and dielectric characteristics, increasing as ruby laser, infrared and microwave system window, ultraviolet to the preparation material of near infrared light with part in the high-tech areas such as light-transmissive window, photodiode substrate material, accurate anti-friction bearing.
Sapphire, especially C face (0001 direction is also referred to as 0 degree plane or basal plane) sapphire can be used as the substrate material of third generation semi-conductor GaN growth.And use the requirement that sapphire surface has been proposed ultra-smooth as substrate material, especially to being used for the Sapphire Substrate sheet of GaN growth, roughness directly influences the perfection of transmittance and GaN and the performance of device.Along with the develop rapidly of photoelectric technology, photovoltaic increases the saphire substrate material demand day by day, thereby sapphire chemically machinery polished minimizing roughness has become present problem demanding prompt solution.
On the current market chemically machinery polished of saphire substrate material mainly be with silicon sol as polishing fluid, the staple of the inside abrasive material is nano oxidized silicon grain, on the one hand its particle diameter is too little, causes its polishing speed not high; On the other hand, silicon sol can not be stablized under neutrallty condition and deposits, and condenses easily and causes increasing the viscosity of polishing fluid, increases the surfaceness of saphire substrate material.
Therefore, the surfaceness that improves after polishing speed and minimizing material polish all is this area problem demanding prompt solution.
The utility model content
The utility model provides a kind of compounded abrasive that is used for chemical mechanical polishing liquid that gathers, and this compounded abrasive comprises the PS kernel and is coated on extranuclear amorphous silica shell in the said PS, and the particle diameter of said compounded abrasive is 100-500nm.
Described PS kernel, it forms for the styrene monomer polyreaction, and described PS kernel is particulate state, in a specific embodiments of the utility model, the spherical in shape or almost spherical of PS kernel.
Described amorphous silica shell, it is coated on around the said PS kernel, forms the slick shell of one deck surface.
In a specific embodiments of the utility model, the particle diameter of described PS kernel is 60-300nm, and described amorphous silica shell thickness is 20-100nm.Preferably, the particle diameter of described PS kernel is 70-150nm, and described amorphous silica shell thickness is 30-80nm.
In a specific embodiment of the utility model, the particle diameter of compounded abrasive is 192nm, and the particle diameter of PS kernel is 100nm, and the amorphous silica shell thickness is 46nm.In another specific embodiment of the utility model, the particle diameter of compounded abrasive is 191nm, and the particle diameter of PS kernel is 75nm, and the amorphous silica shell thickness is 58nm.
Adopt the hud typed compounded abrasive of polystyrene/silica dioxide of technique scheme; At first; The PS kernel of this compounded abrasive has elasticity, in polishing process, can play a shock absorption to polish pressure, can reduce the physical abuse that silica shell brings; Reduce the surfaceness after material polishes, the polishing material of the smooth surface that is easy to get; Secondly; Silicon-dioxide as shell has the physicochemical property similar with traditional silicon colloidal sol; A large amount of hydroxyls is contained on the surface, and surfactivity is high, good hydrophilic property; Outside surface and Mohs' hardness with smoother are moderate, can reduce the damage on polishing material surface and obtain the material of smooth surface.Moreover this compounded abrasive has bigger particle diameter, with polishing material bigger contact area is arranged, and can improve polishing speed effectively.
Description of drawings
Fig. 1,2 is respectively transmission electron microscope (TEM) image of embodiment 1, the 2 hud typed compounded abrasives of polystyrene/silica dioxide that obtain;
Fig. 3 is the structural representation of compounded abrasive;
Embodiment
Embodiment 1
The preparation of the hud typed compounded abrasive of polystyrene/silica dioxide
(1) styrene monomer of 6mL is joined in the mixed solution (wherein the volume ratio of ethanol and water is 14: 1) of 744mL ethanol and water; Pack into (disposing prolong, nitrogen inlet, temperature control detector, mechanical stirrer) in the round-bottomed flask of 4 necks of 2000mL; Constantly stir and form dispersion liquid (homogeneous system), stirring velocity 250-350rpm, the oxygen of feeding nitrogen purge the inside; After 10-30 minute; Begin to be heated to 65-75 ℃, the solution that afterwards the azo diisobutyl amidine hydrochloride of 100mg is dissolved in 50mL water is poured in the reaction system, under 70 ℃ of conditions heated and stirred 1-6 hour.Reaction is cooled to room temperature after finishing, and can obtain the alcosol of PS.
(2) ammoniacal liquor (28wt%) the conditioned reaction system pH of adding 20-30mL in the alcosol of the PS that above-mentioned steps (1) obtains; Stir; With the speed dropping 20mL TEOS of constant flow pump with 10-30mL/h, normal temperature stirs down can obtain compounded abrasive in 24 hours.Referring to Fig. 1 is the TEM image of compound abrasive grain.
(3) compounded abrasive that is obtained for step (2) adopts rotary evaporation to remove the ethanol of the inside, in evaporative process, constantly adds deionized water, can obtain the water-sol system of this compounded abrasive.
The median size of the hud typed compounded abrasive of polystyrene/silica dioxide that present embodiment 1 is obtained is approximately 192nm, and wherein the particle diameter of PS kernel 100 is about 100nm, and the thickness of amorphous silica shell 200 is about 46nm, and is as shown in Figure 3.
Embodiment 2
The preparation of the hud typed compounded abrasive of polystyrene/silica dioxide
(1) styrene monomer of 4mL is joined in the mixed solution (wherein the volume ratio of ethanol and water is 14: 1) of 746mL ethanol and water; Pack into (disposing prolong, nitrogen inlet, temperature control detector, mechanical stirrer) in the round-bottomed flask of 4 necks of 2000mL; Constantly stir and form dispersion liquid (homogeneous system), stirring velocity 250-350rpm, the oxygen of feeding nitrogen purge the inside; After 10-30 minute; Begin to be heated to 65-75 ℃, the solution that afterwards the azo diisobutyl amidine hydrochloride of 100mg is dissolved in 50mL water is poured in the reaction system, under 70 ℃ of conditions heated and stirred 1-6 hour.Reaction is cooled to room temperature after finishing, and can obtain the alcosol of PS.
(2) ammoniacal liquor (28wt%) the conditioned reaction system pH of adding 20-30mL in the alcosol of the PS that above-mentioned steps (1) obtains; Stir; With the speed dropping 25mL TEOS of constant flow pump with 10-30mL/h, normal temperature stirs down can obtain compounded abrasive in 24 hours.Referring to Fig. 2 is the TEM image of compound abrasive grain.
(3) compounded abrasive that is obtained for step (2) adopts rotary evaporation to remove the ethanol of the inside, in evaporative process, constantly adds deionized water, can obtain the water-sol system of this compounded abrasive.
The median size of the hud typed compounded abrasive of polystyrene/silica dioxide that present embodiment 2 is obtained is approximately 191nm, and wherein the particle diameter of PS kernel is about 75nm, and the thickness of amorphous silica shell is about 58nm.
Application examples 1
Saphire substrate material chemical mechanical polishing liquid 1
Its composition is following:
The hud typed compounded abrasive water-sol of polystyrene/silica dioxide system (in the compounded abrasive weight that the is wherein contained) 5wt% that embodiment 1 obtains
Glycocoll 0.2wt%
Ammoniacal liquor (28wt% concentration) 0.03wt%
The deionized water surplus
The pH value of the polishing fluid 1 that application examples 1 makes is about 9, uses it for the finishing polish of saphire substrate material, and the polishing material surface r.m.s. roughness (RMS) of acquisition is 0.6nm, and it is required to satisfy extension, and polishing speed is 17nm/min.
Application examples 2
Saphire substrate material chemical mechanical polishing liquid 2
Its composition is following:
The hud typed compounded abrasive water-sol of polystyrene/silica dioxide system (in the compounded abrasive weight that the is wherein contained) 10wt% that embodiment 1 obtains
Glycocoll 0.5wt%
TMAH 0.01wt%
The deionized water surplus
The pH value of the polishing fluid 2 that application examples 2 makes is about 9, uses it for the finishing polish of saphire substrate material, and the polishing material surface RMS of acquisition is 0.5nm, and it is required to satisfy extension, and polishing speed is 21nm/min.
Application examples 3
Saphire substrate material chemical mechanical polishing liquid 3
Its composition is following:
The hud typed compounded abrasive water-sol of polystyrene/silica dioxide system (in the compounded abrasive weight that the is wherein contained) 5wt% that embodiment 2 obtains
AEEA 0.2wt%
Ammoniacal liquor (28wt% concentration) 0.03wt%
The deionized water surplus
The pH value of the polishing fluid 3 that application examples 3 makes is about 9, uses it for the finishing polish of saphire substrate material, and the polishing material surface RMS of acquisition is 0.8nm, and it is required to satisfy extension, and polishing speed is 23nm/min.
Application examples 4
Saphire substrate material chemical mechanical polishing liquid 4
Its composition is following:
The hud typed compounded abrasive water-sol of polystyrene/silica dioxide system (in the compounded abrasive weight that the is wherein contained) 10wt% that embodiment 2 obtains
AEEA 0.2wt%
TMAH 0.01wt%
The deionized water surplus
The pH value of the polishing fluid 4 that application examples 4 makes is about 9, uses it for the finishing polish of saphire substrate material, and the polishing material surface RMS of acquisition is 0.4nm, and it is required to satisfy extension, and polishing speed is 31nm/min.
Claims (3)
1. compounded abrasive that is used for chemical mechanical polishing liquid; It is characterized in that: this compounded abrasive is the hud typed compounded abrasive of polystyrene/silica dioxide; It comprises the PS kernel and is coated on extranuclear amorphous silica shell in the said PS, and the particle diameter of said compounded abrasive is 100-500nm.
2. the compounded abrasive that is used for chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the particle diameter of described PS kernel is 60-300nm, and described amorphous silica shell thickness is 20-100nm.
3. the compounded abrasive that is used for chemical mechanical polishing liquid as claimed in claim 2 is characterized in that: the particle diameter of described PS kernel is 70-150nm, and described amorphous silica shell thickness is 30-80nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204758481U CN202322710U (en) | 2011-10-14 | 2011-11-25 | Composite abrasive for chemical-mechanical polishing solution |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110311464.0 | 2011-10-14 | ||
| CN201110311464 | 2011-10-14 | ||
| CN2011204758481U CN202322710U (en) | 2011-10-14 | 2011-11-25 | Composite abrasive for chemical-mechanical polishing solution |
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| CN202322710U true CN202322710U (en) | 2012-07-11 |
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| CN2011204758481U Expired - Fee Related CN202322710U (en) | 2011-10-14 | 2011-11-25 | Composite abrasive for chemical-mechanical polishing solution |
| CN2011103800772A Pending CN102417811A (en) | 2011-10-14 | 2011-11-25 | Composite grinding material for chemical mechanical polishing liquid, and preparation method and application of composite grinding material |
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| CN2011103800772A Pending CN102417811A (en) | 2011-10-14 | 2011-11-25 | Composite grinding material for chemical mechanical polishing liquid, and preparation method and application of composite grinding material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102417811A (en) * | 2011-10-14 | 2012-04-18 | 上海施科特光电材料有限公司 | Composite grinding material for chemical mechanical polishing liquid, and preparation method and application of composite grinding material |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103159878B (en) * | 2013-04-03 | 2016-04-13 | 湖南科技大学 | A kind of simple method preparing monodisperse cationic polystyrene microballoon sphere |
| CN103497340B (en) * | 2013-09-25 | 2015-11-18 | 上海新安纳电子科技有限公司 | A kind of preparation method of water-soluble polystyrene-silicon dioxide core-shell type composite particle |
| CN104149039B (en) * | 2014-07-09 | 2017-01-04 | 华侨大学 | A kind of method at ultra-fine abrasive material surface-coated silicon oxide |
| CN106978087B (en) * | 2017-03-20 | 2018-10-23 | 上海大学 | A kind of metatitanic acid coated aluminum oxide nucleocapsid abrasive grain polishing solution composition and preparation method thereof |
| CN108456508A (en) * | 2018-03-23 | 2018-08-28 | 长江存储科技有限责任公司 | Abrasive particles and its manufacturing method |
| CN109536041A (en) * | 2018-12-28 | 2019-03-29 | 天津洙诺科技有限公司 | A kind of sapphire ball cover processing polished liquid and preparation method thereof |
| CN113999654B (en) * | 2021-11-25 | 2022-09-20 | 河南崇锋新材料科技有限公司 | Superhard abrasive cluster and manufacturing method thereof |
| CN117050661A (en) * | 2023-06-21 | 2023-11-14 | 湖北兴福电子材料股份有限公司 | Green monocrystalline silicon coarse polishing solution |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003306664A (en) * | 2002-04-12 | 2003-10-31 | Mitsuboshi Belting Ltd | Resin composite abrasive material |
| CN1331919C (en) * | 2005-12-01 | 2007-08-15 | 上海交通大学 | Process for preparing polyphenylethylene/tin dioxide nucleic shell microball |
| CN202322710U (en) * | 2011-10-14 | 2012-07-11 | 上海施科特光电材料有限公司 | Composite abrasive for chemical-mechanical polishing solution |
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2011
- 2011-11-25 CN CN2011204758481U patent/CN202322710U/en not_active Expired - Fee Related
- 2011-11-25 CN CN2011103800772A patent/CN102417811A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102417811A (en) * | 2011-10-14 | 2012-04-18 | 上海施科特光电材料有限公司 | Composite grinding material for chemical mechanical polishing liquid, and preparation method and application of composite grinding material |
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| CN102417811A (en) | 2012-04-18 |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20131125 |