CN202230890U - RF (radio-frequency) MEMS (micro electro mechanical system) switch - Google Patents
RF (radio-frequency) MEMS (micro electro mechanical system) switch Download PDFInfo
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- CN202230890U CN202230890U CN2011202230245U CN201120223024U CN202230890U CN 202230890 U CN202230890 U CN 202230890U CN 2011202230245 U CN2011202230245 U CN 2011202230245U CN 201120223024 U CN201120223024 U CN 201120223024U CN 202230890 U CN202230890 U CN 202230890U
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- mems switch
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Abstract
The utility model provides a RF (radio-frequency) MEMS (micro electro mechanical system) switch. The switch comprises a main body, a fixed terminal and a moveable terminal, wherein a jack is formed at one side of the body; the moveable terminal together with the fixed terminal is micro-assembled in the body; and the moveable terminal is positioned below the jack and mutually lapped and connected with the fixed terminal, so as to form the switching-on state of the switch. The moveable terminal and the fixed terminal of the RF MEMS switch are micro-assembled together to constitute a switch structure, only under the action of external force can the moveable terminal be separated from the fixed terminal, and the switch is not influenced by the temperature and humidity of external environment and interfered by an electromagnetic field, thus the RF MEMS switch is strong in anti-interference property. In addition, either an electrode for providing driving or other parts with the same action do not need to be additionally added in the RF MEMS switch, thus the structure of the RF MEMS switch is simple; and simultaneously, the bistable state structure of the switch can not be damaged because of common faults, such as contact adhesion and the like, caused by insufficient switching force.
Description
[technical field]
The utility model relates to a kind of MEMS, and (Micro Electro Mechanical System, MEMS) technical field particularly relate to a kind of radio frequency (RF, Radio-Frequency) micro electro-mechanical system switch and manufacturing approach thereof.
[background technology]
The belt switch coaxial connector is one of critical elements of electronic circuit systems such as radio communication; It requires to have stable switch connection and break off two states (being bistable structure) usually; Switch with the signal path on the circuit board transmission path that is used for communication module or equipment, use very extensively at aspects such as portable terminal, radio communication, radar detections.But development need along with miniaturization, low clearance, high-quality requirement; Especially low arriving less than the millimeter level; Even the requirement that gets extra small profile and wide frequency range to micron order; Substantially exceed the traditional conventional Machine Manufacturing Technology and can bear the technical scope of solution, thereby become a big in the industry technical barrier.
Utilize the MEMS technical matters can realize this extra small profile; And can reach the requirement of broad frequency range; The construction of switch that this MEMS technology realizes has the consistency height, is convenient to advantages such as integrated, that RF index is good; Common RF mems switch or switch module are to use drive forms such as comprising static driven, Electromagnetic Drive, thermoelectric driving, Piezoelectric Driving and marmem driving to realize short circuit in the RF transmission line or the miniaturized device that opens circuit in essence; Characteristics such as have that to insert that loss is low, electrical power dissipates little, isolation is high and the linearity is good, wherein static driven simple in structure because of it, be prone to process and be convenient to paid close attention to widely and use with the IC process compatible.
But the RF mems switch structure that these conventional ADS driving modes realize is to outside environment sensitive; The humiture that receives environment outside and the interference of electromagnetic field are bigger; Also need extra increase that the electrode of driving or the parts of other same function are provided; Structure is complicated, it is big to take up space, and also usually causes common fault such as contact adhesion to destroy the bistable structure of switch simultaneously because of the switch force deficiency.
[summary of the invention]
In view of above-mentioned condition, be necessary to provide a kind of RF mems switch that overcomes the problems referred to above.
A kind of RF mems switch comprises:
Main body, the one of which side offers jack;
Fixed terminal; And
Movable terminal is assembled in the said main body with said fixed terminal is little, and said movable terminal is positioned at said jack below, and overlaps each other with said fixed terminal and to link together, and forms the on-state of switch.。
The little assembling of the movable terminal of above-mentioned RF mems switch and fixed terminal constitutes a construction of switch together; Movable terminal must could separate with fixed terminal under the effect of external force; It does not receive the humiture and the interference of electromagnetic field of external environment condition, and therefore, above-mentioned RF mems switch anti-interference is stronger.And above-mentioned RFMEMS switch need not extra increase the electrode of driving or the parts of other same function is provided, and structure is simpler, also can not cause simultaneously common fault such as contact adhesion to destroy the bistable structure of switch because of the switch force deficiency.
Further, elastic deformation externally can take place under the effect of mechanical force in said movable terminal, and normally closed said fixed terminal is separated with said movable terminal, forms the off-state of switch.
Further, said main body is formed by the silicon chip wafer of insulation.
Further, said main body is formed by the insulating body that the surface has metal conducting layer.This metal conducting layer plays the effect of shielding external electromagnetic field, with the antijamming capability of this RF mems switch of further increase.
Further, said fixed terminal and movable terminal all are to be processed by the High Resistivity Si material, and its surface all is coated with the metallic conduction material.
Further; Said movable terminal comprises kink, from crossbeam portion that said kink one end extends and be fixed in the free-ended conductive contact of said crossbeam portion; Elastic deformation can take place in the power effect outside of said kink, and said conductive contact is separated with said fixed terminal.
Further, said fixed terminal comprises that the fixed part that is fixed in the said main body reaches from this vertically extending hook part of said fixed part one side group.
Further, said fixed terminal is processed by the High Resistivity Si material, and its surfaces coated is covered with the metallic conduction material.
Further, said movable terminal is processed by the High Resistivity Si material, and its surfaces coated is covered with the metallic conduction material.
Further, said metallic conduction material is a gold.
[description of drawings]
Fig. 1 is the front view of the RF mems switch of an embodiment;
Fig. 2 is the cutaway view along II-II line among Fig. 1;
Fig. 3 is RF mems switch shown in Figure 1 state diagram when inserting probe;
Fig. 4 is the flow chart of the manufacturing approach of RF mems switch shown in Figure 1;
Fig. 5 is first embodiment of the step of manufacturing two of RF mems switch shown in Figure 4;
Fig. 6 is second embodiment of the step of manufacturing two of RF mems switch shown in Figure 4.
[embodiment]
For the ease of understanding the utility model, will more comprehensively describe the utility model with reference to relevant drawings below.Provided the first-selected embodiment of the utility model in the accompanying drawing.But the utility model can be realized with many different forms, be not limited to embodiment described herein.On the contrary, provide the purpose of these embodiment be make the disclosure of the utility model comprehensively thorough more.
Need to prove, when element is called as " being fixed in " another element, it can be directly on another element or also can have element placed in the middle.When an element is considered to " connection " another element, it can be to be directly connected to another element or possibly to have element placed in the middle simultaneously.Term as used herein " below " and similar statement are just for illustrative purposes.
Only if definition is arranged in addition, the employed all technology of this paper are identical with the implication of the those skilled in the art's common sense that belongs to the utility model with scientific terminology.Among this paper in the specification of the utility model employed term be not intended to be restriction the utility model just in order to describe the purpose of concrete embodiment.Term as used herein " and/or " comprise one or more relevant Listed Items arbitrarily with all combinations.
See also Fig. 1 and Fig. 2, the RF mems switch 100 of present embodiment comprises main body 110, fixed terminal 120 and movable terminal 130.Fixed terminal 120 and movable terminal 130 are little together to be assembled in the main body 110.Said main body 110 is the insulator of essentially rectangular, and the one of which side offers jack 111.Movable terminal 130 is positioned at jack 110 belows of main body 110, and links together with fixed terminal 120 mutual overlap joints, forms the on-state of switch.
Particularly, elastic deformation takes place and separates with fixed terminal 120 in movable terminal 130 under external force, and promptly externally under the effect of mechanical force, normally closed fixed terminal 120 separates with movable terminal 130, forms the off-state of switch.
During use; Fixed terminal 120 and movable terminal 130 respectively with circuit in different links be electrically connected, under the state, fixed terminal 120 contacts with movable terminal 130 usually; Realize " connection " of circuit, promptly fixed terminal 120 is in normally off at work with movable terminal 130; Do the time spent as external thrust, movable terminal 130 separates with fixed terminal 120, promptly realizes " disconnection " of circuit, like this, reaches the switching function that institute's connection circuit is switched on and off.
The movable terminal 130 of above-mentioned RF mems switch 100 and fixed terminal 120 little assemblings constitute a construction of switch together; Movable terminal 130 must could separate with fixed terminal 120 under the effect of external force; It does not receive the humiture and the interference of electromagnetic field of external environment condition; Therefore, above-mentioned RF mems switch 100 anti-interferences are stronger.And above-mentioned RF mems switch 100 need not extra increase the electrode of driving or the parts of other same function is provided, and structure is simpler, also can not cause simultaneously common fault such as contact adhesion to destroy the bistable structure of switch because of the switch force deficiency.
Above-mentioned RF mems switch 100 preferably is processed into through the MEMS technology by the material of high mechanical modulus.Specifically in the present embodiment, said main body 110 is formed by the silicon chip wafer of insulation, with the ability that guarantees that enough mechanical strengths and moisture-proof change, and a kind of high insulation dielectric performance is provided; Fixed terminal 120 is processed by the High Resistivity Si material, and its surfaces coated is covered with the metallic conduction material; Movable terminal 130 is processed by the High Resistivity Si material, and its surfaces coated is covered with the metallic conduction material.The metallic conduction material is gold, silver, copper etc., is preferably gold.
Fixed terminal 120 comprises that the fixed part 121 that is fixed in the said main body 110 reaches from this vertically extending hook part 123 of fixed part 121 1 side groups.The length that extend hook part 123 is shorter, and fixed terminal 120 has the disturbance rejection ability when guaranteeing movable terminal 130 distortion.Preferably, the length of movable terminal 130 is roughly 8 times of fixed terminal 120.
In order to improve the extent of elasticity of movable terminal 130, movable terminal 130 comprises kink 131, crossbeam portion 133 and conductive contact 135.Elastic deformation can take place in kink 131 power effect outside, and an elastic anchorage force is provided, and conductive contact 135 is separated with fixed terminal 120.Concrete, kink 131 is roughly S shape laminated structure.Crossbeam portion 133 extends from kink 131 1 ends, is used to accept the outside application of force.Conductive contact 133 is fixed in the free end of crossbeam portion 133, is used for being electrically connected with fixed terminal 120.Wherein, crossbeam portion 133 is extended with enough length along its length so that enough arm of forces to be provided, thereby elastic force and the external force of keeping conductive contact 135 remove the ability of back elastic recovery to the home position.
Please consult Fig. 2 and Fig. 3 once more, in normal operation, the conductive contact 135 of movable terminal 130 contacts with the hook part 123 of fixed terminal 120, and at this moment, RF mems switch 100 is in conducting state.Be depressed into the crossbeam portion 133 of movable terminal 130 through the jack 111 of main body 110 when outside application of force thing 120 (like probe etc.); Elastic deformation takes place in crossbeam portion 133; Conductive contact 135 is separated with the hook part 123 of fixed terminal 120, and at this moment, RF mems switch 100 is in off-state.Therefore, RF mems switch 100 only could be accomplished switch motion under the effect of external force.
Further; In another embodiment (not illustrating in the drawings); Above-mentioned main body 110 insulating body that the surface has a metal conducting layer of serving as reasons forms; Described metal conducting layer plays the effect of shielding external electromagnetic field, with the antijamming capability of this RF mems switch of further increase for being formed on the surface of insulating body through modes such as coating, range upon range of/deposition or assemblings.
See also Fig. 4, the manufacturing approach of the RF mems switch 100 of an embodiment, it comprises the steps:
Step S201 provides a substrate, and said substrate is preferably the High Resistivity Si embryonic plate.
Step S202 adopts semiconductor technology that fixed terminal 120 and movable terminal 130 are processed in said substrate;
Step S203 is with said fixed terminal 120 and movable terminal 130 little constructions of switch that are assembled into; And
Step S204 is packaged into the RF mems switch with said construction of switch.
See also Fig. 5, wherein, in a specific embodiment, step S202 further comprises the steps:
Step S2021 carries out photoetching, deep reaction ion etching, removes photoresist said substrate, forms the switch supporting construction;
Step S2022 is at the positive and negative difference plated metal conductive materials of said switch supporting construction; And
Step S2023 carries out scribing to said switch supporting construction, forms independent said movable terminal 130 and fixed terminal 120.
See also Fig. 6, in another embodiment, step S202 further comprises the steps:
Step S3021 carries out photoetching, deep reaction ion etching, removes photoresist said switch supporting construction, forms the switch supporting construction;
Step S3022 carries out photoetching to the front of said switch supporting construction, covers the zone that does not need the plated metal conductive materials;
Step S3023, the plated metal conductive materials in the front of said switch supporting construction, and remove photoresist;
Step S3024 carries out photoetching to the reverse side of said switch supporting construction, covers the zone that does not need the plated metal conductive materials;
Step S3025 at the reverse side plated metal conductive materials of said switch supporting construction, and removes photoresist; And
Step S3026 carries out scribing to said switch supporting construction, forms interconnective said movable terminal 130 and fixed terminal 120, and wherein said movable terminal 130 is the said zone that does not need the plated metal conductive materials with said fixed terminal 120 connecting places.
Need to prove that above-mentioned switch supporting mechanism is the embryo spare that forms switch.
Above-mentioned RF mems switch manufacturing approach constitutes a construction of switch together with movable terminal and the little assembling of fixed terminal; Movable terminal must could separate with fixed terminal under the effect of external force; It does not receive influence and the interference of electromagnetic field of the humiture of external environment condition; Therefore, the RF mems switch anti-interference of above-mentioned RF mems switch manufacturing approach manufacturing is stronger.And, need not extra increase the electrode of driving or the parts of other same function are provided, structure is simpler, also can cause simultaneously common fault such as contact adhesion to destroy the bistable structure of switch because of the switch force deficiency.
The above embodiment has only expressed several kinds of execution modes of the utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to the protection range of the utility model.Therefore, the protection range of the utility model patent should be as the criterion with accompanying claims.
Claims (9)
1. a RF mems switch is characterized in that, said RF mems switch comprises:
Main body, the one of which side offers jack;
Fixed terminal; And
Movable terminal is assembled in the said main body with said fixed terminal is little, and said movable terminal is positioned at said jack below, and overlaps each other with said fixed terminal and to link together, and forms the on-state of switch.
2. RF mems switch as claimed in claim 1 is characterized in that, said movable terminal externally under the effect of mechanical force elastic deformation can take place, and normally closed said fixed terminal is separated with said movable terminal, forms the off-state of switch.
3. according to claim 1 or claim 2 RF mems switch is characterized in that, said main body is formed by the silicon chip wafer of insulation.
4. according to claim 1 or claim 2 RF mems switch is characterized in that said main body is formed by the insulating body that the surface has metal conducting layer.
5. RF mems switch as claimed in claim 4; It is characterized in that; Said movable terminal comprises kink, from crossbeam portion that said kink one end extends and be fixed in the free-ended conductive contact of said crossbeam portion; Elastic deformation can take place in the power effect outside of said kink, and said conductive contact is separated with said fixed terminal.
6. RF mems switch as claimed in claim 4 is characterized in that, said fixed terminal comprises that the fixed part that is fixed in the said main body reaches from this vertically extending hook part of said fixed part one side group.
7. RF mems switch as claimed in claim 1 is characterized in that said fixed terminal is processed by the High Resistivity Si material, and its surfaces coated is covered with the metallic conduction material.
8. RF mems switch as claimed in claim 1 is characterized in that said movable terminal is processed by the High Resistivity Si material, and its surfaces coated is covered with the metallic conduction material.
9. like claim 7 or 8 described RF mems switches, it is characterized in that said metallic conduction material is a gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202230245U CN202230890U (en) | 2011-06-28 | 2011-06-28 | RF (radio-frequency) MEMS (micro electro mechanical system) switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202230245U CN202230890U (en) | 2011-06-28 | 2011-06-28 | RF (radio-frequency) MEMS (micro electro mechanical system) switch |
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| Publication Number | Publication Date |
|---|---|
| CN202230890U true CN202230890U (en) | 2012-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202230245U Expired - Lifetime CN202230890U (en) | 2011-06-28 | 2011-06-28 | RF (radio-frequency) MEMS (micro electro mechanical system) switch |
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| Country | Link |
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| CN (1) | CN202230890U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104970792A (en) * | 2014-05-30 | 2015-10-14 | 株式会社百利达 | Measuring device |
-
2011
- 2011-06-28 CN CN2011202230245U patent/CN202230890U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104970792A (en) * | 2014-05-30 | 2015-10-14 | 株式会社百利达 | Measuring device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: ELECTRIC CONNECTION PRECISE TECHNOLOGY CO., LTD. Free format text: FORMER NAME: SHENZHEN ELECTRIC CONNECTOR TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 518100 8-A building, Jin Ying Industrial Zone, West Tian Village, Gongming subdistrict, Guangming District, Guangdong, Shenzhen Patentee after: SHENZHEN ELECTRIC CONNECTOR TECHNOLOGY CO.,LTD Address before: 518100 8-A building, Jin Ying Industrial Zone, West Tian Village, Gongming subdistrict, Guangming District, Guangdong, Shenzhen Patentee before: Shenzhen Electric Connector Technology Co., Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518100 8-A building, Jin Ying Industrial Zone, West Tian Village, Gongming subdistrict, Guangming District, Guangdong, Shenzhen Patentee after: ELECTRIC CONNECTOR TECHNOLOGY CO., LTD. Address before: 518100 8-A building, Jin Ying Industrial Zone, West Tian Village, Gongming subdistrict, Guangming District, Guangdong, Shenzhen Patentee before: SHENZHEN ELECTRIC CONNECTOR TECHNOLOGY CO.,LTD |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120523 |