CN202218208U - Starting-up and shutting-down circuit adopting two metal oxide semiconductor (MOS) tubes - Google Patents
Starting-up and shutting-down circuit adopting two metal oxide semiconductor (MOS) tubes Download PDFInfo
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- CN202218208U CN202218208U CN 201120391459 CN201120391459U CN202218208U CN 202218208 U CN202218208 U CN 202218208U CN 201120391459 CN201120391459 CN 201120391459 CN 201120391459 U CN201120391459 U CN 201120391459U CN 202218208 U CN202218208 U CN 202218208U
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Abstract
The utility model discloses a starting-up and shutting-down circuit adopting two metal oxide semiconductor (MOS) tubes, which is mainly formed by an MOS tube trigger circuit, a starting-up and shutting-down machine main processing chip connected with the MOS tube trigger circuit simultaneously, a VRTC circuit and a starting-up and shutting-down machine signal input circuit. The starting-up and shutting-down circuit has the advantage that a starting-up and shutting-down function which must be achieved by physical keys before can be achieved by a wireless circuit mode. Compared with a triode circuit, due to the fact that the MOS tubes are voltage drivers, as long as the input signal voltage reaches the set threshold value, a system can be driven to be started up or shut down. However, the triode is a current driver, the input signal current must reach the threshold value, and the system can be driven to be started up or shut down. In addition, the driving signal voltage required by the MOS tube is higher than that of the triode.
Description
Technical field
The utility model relates to on/off circuit, specifically is meant the on/off circuit that adopts two metal-oxide-semiconductors.
Background technology
Common key switch machine circuit is can start shooting immediately behind the press key equipment by start, and behind inferior button, equipment shuts down immediately.And in some electronic product equipment; Portable equipment particularly like mobile phone etc., all is the long key switch machine control circuit that adopts: the for example switching on and shutting down of mobile phone; When the switching on and shutting down process of general mobile phone is start; Need the action press the sufficiently long switch switch of switch switch, if the time of pressing key less than time of mobile phone in advance, equipment can not produce any switching on and shutting down and operate (promptly long key switch machine just produces boot action by equipment behind the switching on and shutting down time long enough exactly).The benefit of doing like this be prevent many such as electronic equipment switch switches such as mobile phone be not intended to push, cause being placed in the bag or pocket in the start or the shutdown action of electronic equipment execution error.For the handheld electronic product such as mobile phone, necessary when the circuit of such power on/off function and characteristic is arranged.Realization prevents that the long button of false triggering from extending power on/off function, and a kind of easy way is to utilize discrete original paper such as RC time-delay to add the auxiliary circuit realization, and it is simple to have principle, cheap; Easy design, but its time-delay accuracy is low, can only partly prevent the false touch circuit, adopts special-purpose switching on and shutting down chip to realize; Reliability is high, simplicity of design, but professional because of it; So price is more expensive, common market is difficult for buying, and amateurish making or other Application and implementation are difficult for.
Foregoing is in order that be directed against the on/off circuit of hand trigger-type, and in many radio communications, in the controlled in wireless field, the majority that on/off circuit usually adopts is the design of automatic time switch machine.This automatic time switch machine circuit need not Artificial Control, can solve the human cost problem.But control in real time many, the scheme of automatic switching can not be as the object that adopts.Demand based on real-time control; Therefore, we need a kind of ability to the signal of RFID aerial signal after rectification, through this on/off circuit; Switching on and shutting down signal that can triggering system, thus reach the on/off circuit of the purpose of the wireless signal triggering system switching on and shutting down of using RFID.
The utility model content
It is a kind of simple in structure that the purpose of the utility model is to provide, and cost is low, can carry out wireless signal and trigger, and adopts the on/off circuit of two metal-oxide-semiconductors.
The implementation of the utility model is following: adopt the on/off circuit of two metal-oxide-semiconductors, mainly be made up of metal-oxide-semiconductor circuits for triggering and the switching on and shutting down master process chip, VRTC circuit, the switching on and shutting down signal input circuit that are connected in the metal-oxide-semiconductor circuits for triggering simultaneously.
Said metal-oxide-semiconductor circuits for triggering mainly are made up of a NMOS pipe T9 and a PMOS pipe T8, and the D utmost point pin of said NMOS pipe T9 is connected with the G utmost point pin of PMOS pipe T8; The G utmost point pin of said NMOS pipe T9 is connected with the switching on and shutting down signal input circuit; The S utmost point pin of said PMOS pipe T8 is connected with the VRTC circuit; The D utmost point pin of said PMOS pipe T8 is connected with switching on and shutting down master process chip; The S utmost point pin ground connection of said NMOS pipe T9.
Said switching on and shutting down master process chip comprises the ON/OFF pin, and the D utmost point pin of said PMOS pipe T8 is connected with the ON/OFF pin of switching on and shutting down master process chip.
Said PMOS pipe T8 also is parallel with pull-up resistor R80, and the two ends of said pull-up resistor R80 are connected with G utmost point pin with the S utmost point pin of PMOS pipe T8 respectively.
Also be in series with current-limiting resistance R34 between said PMOS pipe T8 and the NMOS pipe T9, the two ends of said current-limiting resistance R34 are connected with the G utmost point pin of PMOS pipe T8 and the D utmost point pin of NMOS pipe T9 respectively, and said current-limiting resistance R34 is a 0R resistance.
Said PMOS pipe T8 also is in series with a pull down resistor R35, and the end of said pull down resistor R35 is connected the other end ground connection of pull down resistor R35 with the D utmost point pin of PMOS pipe T8 simultaneously with the ON/OFF pin.
Said NMOS pipe T9 also is in series with a pull down resistor R79, and the end of said pull down resistor R79 is connected the other end ground connection of pull down resistor R79 with the G utmost point pin of switching on and shutting down signal input circuit and NMOS pipe T9 simultaneously.
Also be in series with a current-limiting resistance R32 between said pull down resistor R79 and the switching on and shutting down signal input circuit.
Said current-limiting resistance R32 is a 0R resistance.
Also lead to a signal testing point TP_VRTC on the S utmost point pin of said PMOS pipe T8 and the connecting line of VRTC circuit; Also lead to a signal testing point TP_ON/OFF on the D utmost point pin of said PMOS pipe T8 and the connecting line of switching on and shutting down master process chip.
Based on foregoing, the switch triggering principle of the utility model is: after switching on and shutting down signal input circuit input switch machine signal was high level, the G utmost point signal of NMOS pipe T9 was changed to high level; This moment, NMOS managed the S utmost point and the conducting of the D utmost point of T9, because the S utmost point ground connection of NMOS pipe T9, so the D utmost point of triode T9 is switched on back ground connection; This moment is because the D utmost point of NMOS pipe T9 connects the G utmost point of PMOS pipe T8; Therefore, the G utmost point ground connection of PMOS pipe T8 is Gu PMOS pipe T8 is switched on; Make and connect the S utmost point conducting that PMOS manages the D utmost point and the PMOS pipe T8 of T8; Therefore the switching on and shutting down power supply signal of the switching on and shutting down signal of PMOS pipe T8 and PMOS pipe T8 is switched on, the VRTC circuit output switching on and shutting down power supply signal that the S utmost point of PMOS pipe T8 connects, the D utmost point receiving key machine signal of PMOS pipe T8.Thereby the switching on and shutting down signal of system is triggered, thereby makes system begin the switching on and shutting down flow process.The pull-up resistor R80 that uses in the circuit, pull down resistor R79 and pull down resistor R35 can guarantee respectively that PMOS pipe T8 and the off state of NMOS pipe T9 when no signal import stablize, and current-limiting resistance R34 that seals in and current-limiting resistance R32 guarantee then that signal code is not too large and triode is caused damage.Current-limiting resistance R34 and current-limiting resistance R32 cooperate pull-up resistor R80, pull down resistor R79 and pull down resistor R35 simultaneously, can adjust the threshold voltage of input signal trigger switch machine, guarantee that the operation of switching on and shutting down and read-write card is synchronous.
The advantage of the utility model is: this on/off circuit, maximum innovation are with the power on/off function that must use physical button to realize in the past, then are realized by the radio-circuit mode.The utility model circuit is compared with transistor circuit, because metal-oxide-semiconductor is the driven device, promptly as long as applied signal voltage reaches the setting threshold values; Get final product the drive system switching on and shutting down; And triode is a current driving apparatus, must reach threshold value by current input signal, could the drive system switching on and shutting down.In addition the drive signal voltage that needs of metal-oxide-semiconductor than triode than higher.These two kinds of designs can be applied to different occasions, select triode and metal-oxide-semiconductor with encapsulation for use, on same PCB, also can realize the debugging test of two kinds of circuit, and need not adopt two kinds of PCB designs.
Description of drawings
Fig. 1 is the utility model overall structure sketch map.
Embodiment
Embodiment one
As shown in Figure 1.
Adopt the on/off circuit of two metal-oxide-semiconductors, mainly constitute by metal-oxide-semiconductor circuits for triggering and the switching on and shutting down master process chip, VRTC circuit, the switching on and shutting down signal input circuit that are connected in the metal-oxide-semiconductor circuits for triggering simultaneously.
The metal-oxide-semiconductor circuits for triggering mainly are made up of a NMOS pipe T9 and a PMOS pipe T8, and the D utmost point pin of said NMOS pipe T9 is connected with the G utmost point pin of PMOS pipe T8; The G utmost point pin of said NMOS pipe T9 is connected with the switching on and shutting down signal input circuit; The S utmost point pin of said PMOS pipe T8 is connected with the VRTC circuit; The D utmost point pin of said PMOS pipe T8 is connected with switching on and shutting down master process chip; The S utmost point pin ground connection of said NMOS pipe T9.
Switching on and shutting down master process chip comprises the ON/OFF pin, and the D utmost point pin of said PMOS pipe T8 is connected with the ON/OFF pin of switching on and shutting down master process chip.
PMOS pipe T8 also is parallel with pull-up resistor R80, and the two ends of said pull-up resistor R80 are connected with G utmost point pin with the S utmost point pin of PMOS pipe T8 respectively.
Also be in series with current-limiting resistance R34 between PMOS pipe T8 and the NMOS pipe T9, the two ends of said current-limiting resistance R34 are connected with the G utmost point pin of PMOS pipe T8 and the D utmost point pin of NMOS pipe T9 respectively, and said current-limiting resistance R34 is a 0R resistance.
PMOS pipe T8 also is in series with a pull down resistor R35, and the end of said pull down resistor R35 is connected the other end ground connection of pull down resistor R35 with the D utmost point pin of PMOS pipe T8 simultaneously with the ON/OFF pin.
NMOS pipe T9 also is in series with a pull down resistor R79, and the end of said pull down resistor R79 is connected the other end ground connection of pull down resistor R79 with the G utmost point pin of switching on and shutting down signal input circuit and NMOS pipe T9 simultaneously.
Also be in series with a current-limiting resistance R32 between pull down resistor R79 and the switching on and shutting down signal input circuit.
Current-limiting resistance R32 is a 0R resistance.
Also lead to a signal testing point TP_VRTC on the S utmost point pin of PMOS pipe T8 and the connecting line of VRTC circuit; Also lead to a signal testing point TP_ON/OFF on the D utmost point pin of said PMOS pipe T8 and the connecting line of switching on and shutting down master process chip.
When high level after switching on and shutting down signal input circuit place input, NMOS pipe T9 manages T8 with PMOS and all is switched on.Carrying out the switching on and shutting down signal sends.The switching on and shutting down operational motion carries out.Simultaneously, the utility model is for convenient test.Also lead to a signal testing point TP_VRTC on the connecting line of the special S utmost point and VRTC circuit at PMOS pipe T8; And also lead to a signal testing point TP_ON/OFF on the connecting line of the D utmost point of PMOS pipe T8 and switching on and shutting down master process chip.Make things convenient for the test and the check and correction in later stage.
As stated, then can well realize the utility model.
Claims (10)
1. adopt the on/off circuit of two metal-oxide-semiconductors, it is characterized in that: mainly constitute by metal-oxide-semiconductor circuits for triggering and the switching on and shutting down master process chip, VRTC circuit, the switching on and shutting down signal input circuit that are connected in the metal-oxide-semiconductor circuits for triggering simultaneously.
2. the on/off circuit of two metal-oxide-semiconductors of employing according to claim 1 is characterized in that: said metal-oxide-semiconductor circuits for triggering mainly are made up of a NMOS pipe T9 and a PMOS pipe T8, and the D utmost point pin of said NMOS pipe T9 is connected with the G utmost point pin of PMOS pipe T8; The G utmost point pin of said NMOS pipe T9 is connected with the switching on and shutting down signal input circuit; The S utmost point pin of said PMOS pipe T8 is connected with the VRTC circuit; The D utmost point pin of said PMOS pipe T8 is connected with switching on and shutting down master process chip; The S utmost point pin ground connection of said NMOS pipe T9.
3. the on/off circuit of two triodes of employing according to claim 2 is characterized in that: said switching on and shutting down master process chip comprises the ON/OFF pin, and the D utmost point pin of said PMOS pipe T8 is connected with the ON/OFF pin of switching on and shutting down master process chip.
4. the on/off circuit of two triodes of employing according to claim 3 is characterized in that: said PMOS pipe T8 also is parallel with pull-up resistor R80, and the two ends of said pull-up resistor R80 are connected with G utmost point pin with the S utmost point pin of PMOS pipe T8 respectively.
5. the on/off circuit of two triodes of employing according to claim 3; It is characterized in that: also be in series with current-limiting resistance R34 between said PMOS pipe T8 and the NMOS pipe T9; The two ends of said current-limiting resistance R34 are connected with the G utmost point pin of PMOS pipe T8 and the D utmost point pin of NMOS pipe T9 respectively, and said current-limiting resistance R34 is a 0R resistance.
6. the on/off circuit of two triodes of employing according to claim 3; It is characterized in that: said PMOS pipe T8 also is in series with a pull down resistor R35; The end of said pull down resistor R35 is connected the other end ground connection of pull down resistor R35 with the D utmost point pin of PMOS pipe T8 simultaneously with the ON/OFF pin.
7. the on/off circuit of two triodes of employing according to claim 3; It is characterized in that: said NMOS pipe T9 also is in series with a pull down resistor R79; The end of said pull down resistor R79 is connected the other end ground connection of pull down resistor R79 with the G utmost point pin of switching on and shutting down signal input circuit and NMOS pipe T9 simultaneously.
8. the on/off circuit of two triodes of employing according to claim 7 is characterized in that: also be in series with a current-limiting resistance R32 between said pull down resistor R79 and the switching on and shutting down signal input circuit.
9. according to the on/off circuit of two triodes of the described employing of claim 8, it is characterized in that: said current-limiting resistance R32 is a 0R resistance.
10. according to the on/off circuit of two triodes of any described employing among the claim 2-9, it is characterized in that: also lead to a signal testing point TP_VRTC on the S utmost point pin of said PMOS pipe T8 and the connecting line of VRTC circuit; Also lead to a signal testing point TP_ON/OFF on the D utmost point pin of said PMOS pipe T8 and the connecting line of switching on and shutting down master process chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120391459 CN202218208U (en) | 2011-10-14 | 2011-10-14 | Starting-up and shutting-down circuit adopting two metal oxide semiconductor (MOS) tubes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120391459 CN202218208U (en) | 2011-10-14 | 2011-10-14 | Starting-up and shutting-down circuit adopting two metal oxide semiconductor (MOS) tubes |
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| Publication Number | Publication Date |
|---|---|
| CN202218208U true CN202218208U (en) | 2012-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120391459 Expired - Fee Related CN202218208U (en) | 2011-10-14 | 2011-10-14 | Starting-up and shutting-down circuit adopting two metal oxide semiconductor (MOS) tubes |
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| Country | Link |
|---|---|
| CN (1) | CN202218208U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103051317A (en) * | 2011-10-14 | 2013-04-17 | 成都锐奕信息技术有限公司 | On-off switch circuit triggered by wireless signal |
| CN103095264A (en) * | 2011-10-28 | 2013-05-08 | 成都高新区尼玛电子产品外观设计工作室 | Opening and closing machine circuit adopting two triodes |
| CN103092299A (en) * | 2011-10-31 | 2013-05-08 | 成都高新区尼玛电子产品外观设计工作室 | Reset design circuit of system power on/off signal pin |
| CN104536314A (en) * | 2014-12-04 | 2015-04-22 | 潍坊歌尔电子有限公司 | NFC-based startup control circuit, method and electronic device |
| CN104598848A (en) * | 2015-02-11 | 2015-05-06 | 山东诺安诺泰信息系统有限公司 | Waterproof protecting system for notebook computer |
| CN105872931A (en) * | 2016-04-11 | 2016-08-17 | 无锡中感微电子股份有限公司 | Improved starting-up detection circuit and system |
| CN111682868A (en) * | 2020-07-01 | 2020-09-18 | 上海兆芯集成电路有限公司 | Integrated circuit with a plurality of transistors |
-
2011
- 2011-10-14 CN CN 201120391459 patent/CN202218208U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103051317A (en) * | 2011-10-14 | 2013-04-17 | 成都锐奕信息技术有限公司 | On-off switch circuit triggered by wireless signal |
| CN103095264A (en) * | 2011-10-28 | 2013-05-08 | 成都高新区尼玛电子产品外观设计工作室 | Opening and closing machine circuit adopting two triodes |
| CN103092299A (en) * | 2011-10-31 | 2013-05-08 | 成都高新区尼玛电子产品外观设计工作室 | Reset design circuit of system power on/off signal pin |
| CN104536314A (en) * | 2014-12-04 | 2015-04-22 | 潍坊歌尔电子有限公司 | NFC-based startup control circuit, method and electronic device |
| CN104598848A (en) * | 2015-02-11 | 2015-05-06 | 山东诺安诺泰信息系统有限公司 | Waterproof protecting system for notebook computer |
| CN105872931A (en) * | 2016-04-11 | 2016-08-17 | 无锡中感微电子股份有限公司 | Improved starting-up detection circuit and system |
| CN105872931B (en) * | 2016-04-11 | 2019-03-01 | 无锡中感微电子股份有限公司 | Improved open machine examination slowdown monitoring circuit and system |
| CN111682868A (en) * | 2020-07-01 | 2020-09-18 | 上海兆芯集成电路有限公司 | Integrated circuit with a plurality of transistors |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120509 Termination date: 20141014 |
|
| EXPY | Termination of patent right or utility model |