CN202183001U - Thin film transistor panel - Google Patents
Thin film transistor panel Download PDFInfo
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- CN202183001U CN202183001U CN201120206344XU CN201120206344U CN202183001U CN 202183001 U CN202183001 U CN 202183001U CN 201120206344X U CN201120206344X U CN 201120206344XU CN 201120206344 U CN201120206344 U CN 201120206344U CN 202183001 U CN202183001 U CN 202183001U
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- transparent conductive
- conductive material
- protrusion
- film transistor
- thin
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Abstract
The utility model discloses a thin film transistor panel comprising a substrate, an insulating layer and a transparent conductive material, wherein protruding objects are arranged on the surface of the insulating layer facing away from the substrate; the distance between the two adjacent protruding objects is in the range of 1-10 mu m; and the transparent conductive material is arranged on the top surface and the side surfaces of each protruding object of the insulating layer or on the top surface and a plane around the bottom of each protruding object or on the top surface, the side surface and a plane around the bottom of each protruding object.
Description
[technical field]
The utility model relates to a kind of liquid crystal display device, particularly relates to a kind of thin-film transistor display panel, comprises substrate, insulation course, transparent conductive material;
[background technology]
In the existing thin-film transistor display panel, have the gap between the two adjacent strip transparency conductive electrodes 4, as shown in Figure 1; This electric field that has caused the liquid crystal of subregion to receive is not enough; Liquid crystal does not tilt, and is as shown in Figure 2, thereby very low in the penetrance of these gap areas; As shown in Figure 3, influenced the display effect of liquid crystal panel.Making this thin-film transistor display panel needs the board of high-res exposure ability, and processing procedure is had great difficulty.
So, be necessary to provide a kind of thin-film transistor display panel and manufacturing approach thereof, to solve the existing in prior technology problem.
[utility model content]
The purpose of the utility model is to provide a kind of thin-film transistor display panel, thereby causes penetrance low with the electric field deficiency that solves the subregional liquid crystal reception in thin-film transistor display panel middle part, the technical matters that display effect is limited.
For addressing the above problem, the utility model has been constructed a kind of thin-film transistor display panel, comprises substrate; Insulation course; Transparent conductive material, said the insulation course one side of said substrate dorsad are provided with protrusion, and the span of the spacing of adjacent two said protrusions is 1-10 μ m (micron); Said transparent conductive material is arranged on the end face and side of said protrusion of said insulation course, perhaps on the plane of end face and bottom periphery, perhaps on the plane of end face, side and bottom periphery, said insulation course and said protrusion be same material and layer not.
In the thin-film transistor display panel of the utility model; If said transparency electrode is arranged on the plane of end face and bottom periphery of said protrusion of said insulation course; Perhaps on the plane of end face, side and bottom periphery, the said transparent conductive material on two adjacent said protrusions links to each other.
In the thin-film transistor display panel of the utility model, the said said transparent conductive material that is arranged on the said protrusion be strip or sheet.
In the thin-film transistor display panel of the utility model, the span of the height of said protrusion is the 10-100 nanometer.
In the thin-film transistor display panel of the utility model, the cross sectional shape of said protrusion is the shape or the irregular shape of rule.
In the above-mentioned thin-film transistor display panel, the cross sectional shape of said protrusion is a rectangle.
In the above-mentioned thin-film transistor display panel, the cross sectional shape of said protrusion is trapezoidal.
In the above-mentioned thin-film transistor display panel, the cross sectional shape of said protrusion is a triangle.
In the above-mentioned thin-film transistor display panel, the cross sectional shape of said protrusion is a parallelogram.
In the above-mentioned thin-film transistor display panel, the cross sectional shape of said protrusion is semicircle.
The utility model has been eliminated the blind area that liquid crystal does not tilt between two transparency conductive electrodes in the prior art with respect to prior art, and the penetrance in the viewing area is even, has strengthened display effect.
For letting the foregoing of the utility model can be more obviously understandable, hereinafter is special lifts preferred embodiment, and cooperates appended graphicly, elaborates as follows:
[description of drawings]
Fig. 1 is the thin film transistor (TFT) of thin-film transistor display panel in the prior art and the vertical view of pixel region;
Fig. 2 is the partial view in A-A ' cross section among Fig. 1;
Fig. 3 is the synoptic diagram of the penetrance of thin-film transistor display panel among Fig. 2;
Fig. 4 is the vertical view of first preferred embodiment of the thin-film transistor display panel of the utility model;
Fig. 5 is the partial view in B-B ' cross section among Fig. 4;
Fig. 6 is the synoptic diagram of the penetrance of thin-film transistor display panel among Fig. 5;
Fig. 7 is the synoptic diagram of second preferred embodiment of the thin-film transistor display panel of the utility model;
Fig. 8 is the synoptic diagram of the penetrance of thin-film transistor display panel among Fig. 7;
Fig. 9 is the vertical view of the 3rd preferred embodiment of the thin-film transistor display panel of the utility model;
Figure 10 is the partial view in C-C ' cross section among Fig. 9;
Figure 11 is the synoptic diagram of the penetrance of thin-film transistor display panel among Figure 10;
Figure 12 is the synoptic diagram of the 4th preferred embodiment of the thin-film transistor display panel of the utility model;
Figure 13 is the synoptic diagram of the penetrance of thin-film transistor display panel among Figure 12;
Figure 14 is the synoptic diagram of the 5th preferred embodiment of the thin-film transistor display panel of the utility model;
Figure 15 is the synoptic diagram of the penetrance of thin-film transistor display panel among Figure 14;
Figure 16 is the process flow diagram of the manufacturing approach preferred embodiment of the utility model thin-film transistor display panel.
[embodiment]
Below the explanation of each embodiment be with reference to additional graphic, can be in order to illustration the utility model in order to the specific embodiment of implementing.The direction term that the utility model is mentioned, for example " on ", D score, " preceding ", " back ", " left side ", " right side ", " interior ", " outward ", " side " etc., only be direction with reference to annexed drawings.Therefore, the direction term of use is in order to explanation and understands the utility model, but not in order to restriction the utility model.
In the drawings, the unit of structural similarity is to represent with same numeral.
With reference to figure 4 and Fig. 5, Fig. 4 is the vertical view of first preferred embodiment of the thin-film transistor display panel of the utility model, and Fig. 5 is the partial view in B-B ' cross section among Fig. 4.Transparent conductive material (first transparent conductive material 12 and second transparent conductive material 15) is a strip.Insulation course 5 is arranged on the substrate 6, and insulation course 5 one side of substrate 6 dorsad is provided with protrusion 7, and protrusion 7 has end face 8, first side 9 and second side 10.In the present embodiment, the cross section of protrusion 7 is rectangles, and insulation course 5 is that same material and layer are other with protrusion 7.The end face 8 of protrusion 7 is provided with first transparent conductive material 12, and the plane 11 at the root place of protrusion 7 is provided with second transparent conductive material 15.Colored filter 2 is arranged on the public electrode 1, and liquid crystal layer 3 places between public electrode 1 and the transparent material (first transparent conductive material 12 and second transparent conductive material 15).In the present embodiment, second side 10 of first side 9 of second transparent conductive material 15 and protrusion 7 and adjacent protrusion 7 contacts.The fixed thickness of the thickness of first transparent conductive material 12 and second transparent conductive material 15; Here; Fixed thickness is defined as on first transparent conductive material 12 and second transparent conductive material 15 and chooses two zones arbitrarily, and the thickness in these two zones differs and is no more than 10%.The height H of protrusion 7 all can be in 10-100nm (nanometer) value.The spacing of two adjacent protrusions 7 is D, and the span of D is 1-10 μ m (micron).In the utility model; Because protrusion 7 is set on insulation course 5; And on the plane 11 at end face of protrusion 78 and protrusion 7 roots place, transparent conductive material (first transparent conductive material 12 and second transparent conductive material 15) is set all, so has eliminated the blind area that liquid crystal of the prior art does not tilt, promoted penetrance; As shown in Figure 6; The corresponding penetrance in first transparent conductive material, 12 zones is more or less the same with the corresponding penetrance in second transparent conductive material, 15 zones among Fig. 6, because two transparent conductive materials have certain drop in vertical direction, promptly sending a little of electric field is staggeredly arranged simultaneously; Increased the effect of electric field, promoted penetrance liquid crystal.
With reference to figure 7, Fig. 7 is the synoptic diagram of second preferred embodiment of the thin-film transistor display panel of the utility model.Transparent conductive material (integral body that first transparent conductive material 12, the 3rd transparent conductive material 13 and second transparent conductive material 15 are formed) is a strip, and vertical view and Fig. 4 of the thin-film transistor display panel of present embodiment are similar.Insulation course 5 is arranged on the substrate 6, and insulation course 5 one side of substrate 6 dorsad is provided with protrusion 7, and protrusion 7 has end face 8, first side 9 and second side 10, and insulation course 5 is that same material and layer are other with protrusion 7.In the present embodiment, the cross section of protrusion 7 is right-angled trapezium.Be respectively equipped with first transparent conductive material 12 and the 3rd transparent conductive material 13 on the end face 8 of protrusion 7, second side 10; The 3rd transparent conductive material 13 extends to the plane 11 at protrusion 7 roots place; Be connected with second transparent conductive material 15; Preferably, first transparent conductive material 12 links to each other with the 3rd transparent conductive material 13.Colored filter 2 is arranged on the public electrode 1, and liquid crystal layer 3 places between public electrode 1 and the transparent material (integral body that first transparent conductive material 12, the 3rd transparent conductive material 13 and second transparent conductive material 15 are formed).The fixed thickness of first transparent conductive material 12 and the 3rd transparent conductive material 13; Here; Fixed thickness is defined as on first transparent conductive material 12, the 3rd transparent conductive material 13 and second transparent conductive material 15 and chooses two zones arbitrarily, and the thickness in these two zones differs and is no more than 10%.The span of the height H of protrusion 7 is 10-100nm.The spacing of two adjacent protrusions 7 is D, and the span of D is 1-10 μ m.As shown in Figure 8, the corresponding penetrances in the 3rd transparent conductive material 13 zone are more or less the same with the corresponding penetrances in first transparent conductive material, 12 zones, have promptly eliminated in the prior art blind area that the liquid crystal between the two adjacent transparent conductive materials does not tilt.
With reference to figure 9 and Figure 10, Fig. 9 is the vertical view of the 3rd preferred embodiment of the thin-film transistor display panel of the utility model, and Figure 10 is the partial view in C-C ' cross section among Fig. 9.Transparent conductive material (integral body that first transparent conductive material 12, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are formed) is a sheet.Insulation course 5 is arranged on the substrate 6, and insulation course 5 one side of substrate 6 dorsad is provided with protrusion 7, and protrusion 7 has end face 8, first side 9 and second side 10, and the cross sectional shape of protrusion 7 is isosceles trapezoids, and insulation course 5 is that same material and layer are other with protrusion 7.First transparent conductive material 12 is arranged on the end face 8 of protrusion 7; The 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are separately positioned on first side 9 and second side 10, and second transparent conductive material 15 is arranged on the plane 11 at protrusion 7 roots place.Colored filter 2 is arranged on the public electrode 1, and liquid crystal layer 3 places between public electrode 1 and the transparent material (integral body that first transparent conductive material 12, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are formed).The fixed thickness of first transparent conductive material 12, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14; Here; Fixed thickness is defined as on first transparent conductive material 12, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 and chooses two zones arbitrarily, and the thickness in these two zones differs each other and is no more than 10%.The height of protrusion 7 is H, and the span of H is 10-100nm.The spacing of two adjacent protrusions 7 is D, and the span of D is 1-10 μ m.With reference to Figure 11, the penetrance curve is very smooth, eliminates the trough about penetrance that occurs in the prior art, has strengthened display effect.
With reference to Figure 12, Figure 12 is the synoptic diagram of the 4th preferred embodiment of the thin-film transistor display panel of the utility model.Transparent conductive material (integral body that first transparent conductive material, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are formed) is a sheet, and vertical view and Fig. 9 of the thin-film transistor display panel of present embodiment are similar.Insulation course 5 is arranged on the substrate 6, and insulation course 5 one side of substrate 6 dorsad is provided with protrusion 7, and protrusion 7 has end face 8, first side 9 and second side 10, and the cross sectional shape of protrusion 7 is rectangles, and insulation course 5 is that same material and layer are other with protrusion 7.First transparent conductive material 12 is arranged on the end face 8 of protrusion 7; The 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are separately positioned on first side 13 and second side 14, and second transparent conductive material 15 is arranged on the plane 11 at protrusion 7 roots place.Transparent conductive material on two adjacent protrusions 7 links to each other.Colored filter 2 is arranged on the public electrode 1, and liquid crystal layer 3 places between public electrode 1 and the transparent material (integral body that first transparent conductive material 12, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are formed).The fixed thickness of first transparent conductive material 12, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14; Here; Fixed thickness is defined as on first transparent conductive material 12, second transparent conductive material 15, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 and chooses two zones arbitrarily, and the thickness in these two zones differs each other and is no more than 10%.The height of protrusion 7 is H, and the span of H is 10-100nm.The spacing of two adjacent protrusions 7 is D, and the span of D is 1-10 μ m.Figure 13, the penetrance curve is very smooth, eliminates the trough about penetrance that occurs in the prior art, has strengthened display effect.
With reference to Figure 14, Figure 14 is the synoptic diagram of the 5th preferred embodiment of the thin-film transistor display panel of the utility model.Transparent conductive material (integral body that first transparent conductive material 12, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are formed) is a sheet, and vertical view and Fig. 9 of the thin-film transistor display panel of present embodiment are similar.Insulation course 5 is arranged on the substrate 6, and insulation course 5 one side of substrate 6 dorsad is provided with protrusion 7, and protrusion 7 has end face 8, first side 9 and second side 10; Protrusion 7 is non-regular shape; First side 9 and 10 of second sides of protrusion 7 all are curved surfaces, especially, and in the present embodiment; First side 9 and second side 10 of protrusion 7 all are quadrant arc surfaces, and insulation course 5 is that same material and layer are other with protrusion 7.First transparent conductive material 12 is arranged on the end face 8 of protrusion 7; The 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are separately positioned on first side 13 and second side 14, and the transparent conductive material on the relative side of adjacent two protrusions 7 links to each other.Colored filter 2 is arranged on the public electrode 1, and liquid crystal layer 3 places between public electrode 1 and the transparent material (integral body that first transparent conductive material 12, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14 are formed).The fixed thickness of first transparent conductive material 12, the 3rd transparent conductive material 13 and the 4th transparent conductive material 14, here, fixed thickness is defined as chooses two zones arbitrarily on transparent material, and the thickness in these two zones differs each other and is no more than 10%.The height of protrusion 7 is H, and the span of H is 10-100nm.The spacing of two adjacent protrusions 7 is D, and the span of D is 1-10 μ m.Figure 15, the penetrance curve is very smooth, eliminates the trough about penetrance that occurs in the prior art, has strengthened display effect.
In the thin-film transistor display panel of the utility model, the cross sectional shape of protrusion 7 can also be regular shapes such as triangle, parallelogram, semicircle except being the above-mentioned shape, can also be other irregular shape.
With reference to Figure 16, Figure 16 is the preferred embodiment process flow diagram of manufacturing approach of the thin-film transistor display panel of the utility model.In step 1601, insulation course 5 is set on the one side of substrate 6 backlight.In step 1602, to said insulation course 5 dorsad the one side of substrate 6 to carry out etching be 1-10 μ m with the span of the spacing that forms 7, two adjacent said protrusions 7 of protrusion.In step 1603, remove the residue that produces after the etching on the insulation course 5.In step 1604; Carried out on the etched one side transparent conductive material being set at insulation course 5; Particularly; The transparent conductive material that the mode that can use magnetron sputtering or deposition has carried out being provided with on the etched one side fixed thickness at insulation course here, fixed thickness is meant two zones choosing transparent conductive material arbitrarily, the thickness in these two zones differs and is no more than 10%; In addition, can also use the mode of deposition to carry out the unfixed transparent conductive material of deposit thickness on the etched one side, here at insulation course; Thickness is not meant fixedly between two adjacent protrusions that the thickness of the transparent conductive material on (plane 11 that comprises first side 9, second side 10 and the protrusion 7 roots place of protrusion 7) differs with thickness at the transparent conductive material of protrusion 7 end faces 8 and surpasses 10%, especially, if the former is greater than the latter; On the surface of the transparent conductive material between adjacent two protrusions 7, carry out etching so, make the transparent conductive material fixed thickness after the etching, here; Fixed thickness is meant two zones choosing transparent conductive material arbitrarily, and the thickness in these two zones differs and is no more than 10%, after the etching; Remove the residue on the transparent conductive material,, on the surface of the transparent conductive material of protrusion 7 end faces 8, carry out etching so if the former is less than the latter; Make the transparent conductive material fixed thickness after the etching; Here, fixed thickness is meant two zones choosing transparent conductive material arbitrarily, and the thickness in these two zones differs and is no more than 10%; After the etching, remove the residue on the transparent conductive material.
In sum; Though the utility model discloses as above with preferred embodiment; But above-mentioned preferred embodiment is not that those of ordinary skill in the art is in spirit that does not break away from the utility model and scope in order to restriction the utility model; All can do various changes and retouching, so the protection domain of the utility model is as the criterion with the scope that claim defines.
Claims (10)
1. a thin-film transistor display panel comprises substrate, insulation course, and transparent conductive material is characterized in that:
The said insulation course one side of said substrate dorsad is provided with protrusion, and the span of the spacing of adjacent two said protrusions is the 1-10 micron;
Said transparent conductive material is arranged on the end face and side of said protrusion of said insulation course, perhaps on the plane of end face and bottom periphery, perhaps on the plane of end face, side and bottom periphery, said insulation course and said protrusion be same material and layer not.
2. thin-film transistor display panel according to claim 1; It is characterized in that; If said transparency electrode is arranged on the plane of end face and bottom periphery of said protrusion of said insulation course; Perhaps on the plane of end face, side and bottom periphery, the said transparent conductive material on two adjacent said protrusions links to each other.
3. thin-film transistor display panel according to claim 1 is characterized in that, be arranged on said transparent conductive material on the said protrusion and be strip or sheet.
4. thin-film transistor display panel according to claim 1 is characterized in that, the span of the height of said protrusion is the 10-100 nanometer.
5. thin-film transistor display panel according to claim 1 is characterized in that, the cross sectional shape of said protrusion is the shape or the irregular shape of rule.
6. thin-film transistor display panel according to claim 5 is characterized in that, the cross sectional shape of said protrusion is a rectangle.
7. thin-film transistor display panel according to claim 5 is characterized in that, the cross sectional shape of said protrusion is trapezoidal.
8. thin-film transistor display panel according to claim 5 is characterized in that, the cross sectional shape of said protrusion is a triangle.
9. thin-film transistor display panel according to claim 5 is characterized in that, the cross sectional shape of said protrusion is a parallelogram.
10. thin-film transistor display panel according to claim 5 is characterized in that, the cross sectional shape of said protrusion is semicircle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120206344XU CN202183001U (en) | 2011-06-19 | 2011-06-19 | Thin film transistor panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120206344XU CN202183001U (en) | 2011-06-19 | 2011-06-19 | Thin film transistor panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202183001U true CN202183001U (en) | 2012-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120206344XU Expired - Lifetime CN202183001U (en) | 2011-06-19 | 2011-06-19 | Thin film transistor panel |
Country Status (1)
| Country | Link |
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| CN (1) | CN202183001U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368132A (en) * | 2011-06-19 | 2012-03-07 | 深圳市华星光电技术有限公司 | Thin-film transistor panel and production method thereof |
-
2011
- 2011-06-19 CN CN201120206344XU patent/CN202183001U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102368132A (en) * | 2011-06-19 | 2012-03-07 | 深圳市华星光电技术有限公司 | Thin-film transistor panel and production method thereof |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120404 |
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| CX01 | Expiry of patent term |