CN202127036U - Equipment for preparing selective emitter of crystalline silicon solar battery - Google Patents
Equipment for preparing selective emitter of crystalline silicon solar battery Download PDFInfo
- Publication number
- CN202127036U CN202127036U CN2011202533290U CN201120253329U CN202127036U CN 202127036 U CN202127036 U CN 202127036U CN 2011202533290 U CN2011202533290 U CN 2011202533290U CN 201120253329 U CN201120253329 U CN 201120253329U CN 202127036 U CN202127036 U CN 202127036U
- Authority
- CN
- China
- Prior art keywords
- chamber
- laser
- vacuum
- equipment
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses equipment for preparing a selective emitter of a crystalline silicon solar battery, comprising continuous vacuum chambers, a gas circuit control system, an electronic control system, a heating system, a laser system and an air bleed system, wherein the vacuum chamber 1 is a piece inlet chamber; the chamber 3 is a piece outlet chamber; the piece inlet and outlet chambers are provided with vacuum doors which can be opened and closed manually to be installed with lower pieces; the piece inlet chamber is provided with a preheating system for heating a base piece; the chamber 2 is a laser mixed vacuum chamber and is provided with two sets of laser systems which can vertically emit lasers onto a silicon piece by transmitting a glass window; and the two sets of laser systems comprise a light laser mixed system and a heavily laser mixed system, thereby forming the selective emitter. The vacuum chambers connected with one another by high vacuum valves, and independent stepless speed regulation is adopted for a transmission system. A vacuum unit comprises a mechanical pump set, a waste gas treatment device, a valve, a pipeline system and the like. A PLC (Programmable Logic Controller) of the electronic control system controls the pressure of gas, the heating temperature and the transmission system. The equipment can realize the quantitive production of selective emitters by adopting the technology of preparing the selective emitters by the lasers.
Description
Technical field
The utility model relates to a kind of crystal silicon solar energy battery production equipment field, especially a kind of equipment for preparing selective emitter of crystal silicon solar cell.
Background technology
The developing direction of solar cell is low-cost, high efficiency, and selective emitting electrode structure is to be hopeful to realize one of high efficiency method in the p-n junction crystal-silicon solar cell production technology.Selective emitting electrode structure has two characteristics: 1) under gate electrode line and near the highly doped dark diffusion region of formation; 2) form low-doped shallow diffusion region in other zones.
Under the gate electrode line and near the highly doped dark diffusion region of formation, highly dopedly form ohmic contact when doing electrode easily, and this regional volume resistance is less, thereby reduces the series resistance of solar cell, improve the fill factor, curve factor FF of battery.The dark diffusion of impurity can deepen to strengthen horizontal n+/p knot, and laterally n+/p ties and just ties the collection rate that can improve photo-generated carrier at the horizontal n+/n of doped regions and the formation of high-doped zone intersection, thereby improves the short circuit current Isc of battery.In addition, dark knot can prevent that electrode metal from permeating to the interface, reduces electrode metal is introduced impurity energy level in the forbidden band probability.
The low-doped bluk recombination probability that can reduce minority carrier in the solar cell region of activation; And can carry out surface passivation preferably; Reduce the surface recombination probability of minority carrier, thereby reduce the reverse saturation current of battery, improve the open circuit voltage Voc and the short circuit current Isc of battery.In addition; Because of the surface the closer to solar cell, the generation rate of photo-generated carrier is high more, and high more the closer to the collection rate of diffused junction photo-generated carrier; So shallow diffused junction can obtain high collection rate in the zone that high carrier produces, and improves the short circuit current Isc of battery.
In a word, this kind structure can improve the open circuit voltage Voc of solar cell, short circuit current Isc and fill factor, curve factor FF, thus make battery obtain high photoelectric conversion efficiency.
In the prior art, manufacture selective emitter of solar battery and use photoetching behind the phosphorus doping usually, secondary doping perhaps carries out burying grid behind the laser grooving then.These two kinds of method technologies are all comparatively loaded down with trivial details, and its equipment is more complicated also.The method technology of manufacturing selective emitter with twice doping of laser is very simple, is very suitable for practical application.The utility model is primarily aimed at this method, designs a kind of equipment that can fast realize this method continuously, in order to realize its large-scale production process.
The utility model content
The utility model purpose: the utility model technical problem to be solved is the method for preparing the crystal silicon solar cell selective generating utmost point to a kind of; Provide that a kind of technology is simple, reliable in quality, can realize large-scale production, workable the mix equipment of preparation selective emitter method of secondary laser that is applicable to, make its technology in actual production process, be able to use.
Technical scheme: the utility model mainly is made up of continous vacuum chamber, air-path control system, electric-control system, vacuum-pumping system.
Continous vacuum chamber and air-path control system pass through various electric components through wireway, valve etc. with electric-control system, are connected respectively through the vacuum components and parts with vacuum-pumping system.Wherein air-path control system is that sharp happy doping vacuum chamber in the continous vacuum chamber provides doping process gas; Process gas gets into the laser doping vacuum chamber through valve, mass flowmenter.Electric-control system is connected with continous vacuum chamber, air-path control system, vacuum unit respectively and implements control, and electric-control system mainly is turnover print, laser power, process gas pressure, print heating-up temperature, laser illumination print time etc. to the control of continous vacuum chamber; Electric-control system mainly is the switching time of air guide valve, the measurement of gas flowmeter etc. to the control of air-path control system; Electric-control system mainly is that mechanical pump starts, stops to the control of vacuum unit, the switching of vacuum valve and interlocking, bleeds the time etc.Wherein the vacuum unit is connected with the continous vacuum chamber, mainly the continous vacuum chamber is vacuumized, and for doping process gas provides the base vacuum degree, guarantees the doping quality; The fore pump exhaust outlet is connected with exhaust pipe in the vacuum unit, and waste gas enters atmosphere through handling after meeting environmental protection standard after pipeline is discharged.
The continous vacuum chamber is made up of turnover sheet chamber and laser doping vacuum chamber, and turnover sheet chamber is positioned at the both sides of chamber, and the laser doping vacuum chamber mediates.But the vacuum chamber material is the stainless steel of acid and alkali-resistance, adopts the 316L stainless steel usually, and the chamber monnolithic case is a rectangle, and inside is the multi-cavity cell structure.Vacuum door is equipped with in turnover sheet chamber, and conveniently to pick and place print, all the other each chambers link with vacuum valve, can adopt vacuum flap valve or vacuum gate valve, can be rapidly opened and closed when print transmits between each chamber.
Vacuum-packed windowpane is equipped with near the position of entering the sheet chamber in laser doping vacuum chamber top; Its dimensioned area is greater than the print area; Laser light dope system is equipped with in the windowpane top; Can send some roads x wire laser or face laser, the lateral length of laser guarantees that greater than the length of pending print the whole area of print can obtain laser radiation.Have another that vacuum-packed long and narrow windowpane is housed at the end near the slice chamber, its top is equipped with linear laser heavy doping system, and the preferred laser light dope of the utility model system is a continuous wave laser, and laser heavy doping system is a giant pulse laser.
The bottom of laser doping vacuum chamber is evenly distributed with the cloth air chamber of band qi-emitting hole, the inlet flange that is connected of follow-up feed channel is arranged on the cloth air chamber, and be connected with air-path control system.Enter the sheet chamber and the laser doping vacuum chamber is equipped with heater, can evenly heat print.The metal observation window is equipped with in each chamber front, and the back is connected with vacuum-pumping system by vacuum pipe and vacuum valve.Each chamber interior be equipped with can independent stepless speed regulation drive system and slide glass dolly, drive system is roller transmission or gear drive.Wherein the slide glass dolly is by aluminium sheet and elasticly can high temperature resistantly not allow volatile elastic pressuring plate to form, and flexure strip is fixed on appropriate location on the aluminium sheet through alignment pin.
The vacuum unit is made up of mechanical unit, high-vacuum pump and vacuum pipe.Wherein high-vacuum pump can adopt cryopump, molecular pump etc., is connected with high vacuum valve between high-vacuum pump and the vacuum chamber.The machinery unit links through foreline valve with high-vacuum pump, is connected through slightly taking out valve with vacuum chamber.Vacuum pipe adopts the stainless-steel vacuum pipe to be connected with the vacuum ripple pipe.
Air-path control system is mainly used in the flow control of realization to impurity gas.Critical piece comprises mass flowmenter, unidirectional valve, pneumatic stopping valve, air guide pipeline, pressure-reducing valve, gas cylinder.Process gas gets into laser doping vacuum chamber and even gas distribution by flowing out in the gas cylinder through pressure-reducing valve, mass flowmenter, unidirectional valve, pneumatic stopping valve; The required process gas of technology can mix in laser doping vacuum the piping outside the house earlier and gets into the laser doping vacuum chamber again, also can be introduced into the laser doping vacuum chamber and mix.Connect through stainless steel tube between each parts of air-path control system, the air-path control system control signal is provided by electric-control system (PLC).
Electric-control system mainly is made up of the PLC controller, and the PLC controller itself has fundamental procedure, is provided with variable element, and variable element is set through screen by operating personnel, and the parameter of setting is controlled the Be Controlled parts through PLC.Simultaneously, PLC also can be connected with PC, and the parameters in the technical process is carried out real-time tracking and memory storage, and computer is connected online, can realize Long-distance Control and monitoring to technology.
As a preferred version of the utility model, between said turnover sheet chamber and the laser doping chamber, can set up surge chamber, with the processing atmosphere that guarantees that better laser doping is indoor.
Useful achievement: the utility model is in the existing crystal silicon solar energy battery production process, adopts the laser radiation secondary doping to prepare new technology and the device designed of the selectivity generating utmost point.Can on crystalline silicon, realize preparing fast and efficiently selective emitter technology.Present design can satisfy the various process conditions of this new technology fully, and the function that three vacuum chambers will enter sheet, doping and slice chamber is separated, and makes it and can work simultaneously, has shortened the process time, is suitable for large-scale production in enormous quantities.Because the laser doping vacuum chamber can directly not be exposed among the atmosphere, and the atmospheric condition in the doping process is maintained a good state, and helps guaranteeing processing quality.The slide glass dolly has taken into full account the difference of output under fragility and the different production line condition of silicon chip, simplicity of design and can be according to the slide glass amount of output different adjustment per car.The drive system of three vacuum chambers can independent stepless speed regulation; Can fully guarantee to the demands of different of drive system, to change like the process conditions demand in the different processes stage; Drive system also can flexiblely satisfy its requirement, increases its compatibility of apparatus.Owing to do not adopt complicated structure, accurate cooperation, this programme realizes that easily good reproducibility and cost are lower, are highly suitable for quantizing to produce.
Description of drawings
Accompanying drawing 1 is system module figure
Accompanying drawing 2 is a system construction drawing
Accompanying drawing 3 is a cloth air chamber front view
Accompanying drawing 4 is a cloth air chamber vertical view
Accompanying drawing 5 is a live-roller schematic construction front view
Accompanying drawing 6 is a live-roller schematic construction vertical view
Accompanying drawing 7 is a silicon chip slide glass supporting plate front view
Accompanying drawing 8 is a silicon chip slide glass supporting plate vertical view
Specific embodiment
As shown in Figure 1, the utility model mainly is made up of laser doping vacuum chamber, air-path control system, electric-control system, vacuum-pumping system.Wherein electric-control system is to the laser doping vacuum chamber, and air-path control system, vacuum-pumping system are carried out control.
The connected mode of laser doping vacuum chamber and vacuum-pumping system is as shown in Figure 2, and wherein vacuum chamber 1,3 is respectively into sheet chamber, the slice chamber, and vacuum chamber 2 is a laser laser doping vacuum chamber.High-vacuum pump 42, mechanical unit 43 are connected by vacuum valve 41.The laser transmitting system 5a, 5b that places 2 tops, laser doping chamber is individually fixed in directly over the windowpane by support 6.Observation window 7 is positioned at the vacuum chamber side, and each vacuum chamber all has one.2 two ends, laser doping chamber are connected with high vacuum valve 8 with turnover sheet chamber, but advance the door for vacuum chamber 9 realization sealings of sheet chamber 1 inlet and slice chamber 3 outlet configuration hand switches.Be positioned at the bottom of laser doping chamber like Fig. 3,4, the gas tank of cloth shown in 5 10, its center and windowpane center are positioned on the vertical curve, with the live-roller below of windowpane place plane parallel.11 are the live-roller system, as shown in Figure 5, comprise movable sealing sleeve 11a and roller rod 11b, are positioned at the vacuum chamber below, and three vacuum chambers can be realized different transmission speeds respectively.Fig. 7, Fig. 8 are slide rack, are made up of aluminium sheet 15, plastics king compressing tablet 14, split pin 12 and alignment pin 13.
Further specify the utility model below in conjunction with accompanying drawing and embodiment.
156 * 156 P type silicon chips through the preorder PROCESS FOR TREATMENT are carried out selective emitter manufacture, establishing slide glass dolly slide glass amount is 10,10 minutes one stoves of productive temp.Calculate each vacuum-chamber dimensions according to slide glass dolly size, the vacuum degree that is reached by vacuum chamber size and productive temp and arts demand is confirmed the configuration of vacuum-pumping system.Its production process is following, to advancing the venting of sheet chamber, opens door for vacuum chamber, and slide rack is put on the vacuum chamber drive system roller.Close door for vacuum chamber, vacuumize, simultaneously, open pre-heating system in sheet chamber and the laser doping vacuum chamber entering sheet chamber, laser doping vacuum chamber, slice chamber.When vacuum degree reaches base vacuum and spends, in the laser doping vacuum chamber, feed impurity gas, work as preheat temperature; When pressure meets process conditions in heating time and the laser doping vacuum chamber; Open the into vacuum valve between the sheet chamber and laser doping vacuum chamber, the slide glass dolly is sent to the laser doping vacuum chamber, close vacuum valve then; Open laser simultaneously; Go out the speed of live-roller according to the Time Calculation of the ultra shallow junction of the 1 pair of silicon chip light dope of laser preparation, carve grid width according to this speed and silicon chip then and calculate huge laser and suspend the time interval of launching laser at every turn, set its parameter.After silicon chip is accomplished the light dope first time, arrive under second windowpane, huge laser carries out the compartment irradiation to its grid positions, realizes heavy doping.Carry out certain hour when doping, satisfy technology and mix when requiring, close laser and process gas, open the valve between laser doping vacuum chamber and the slice chamber, slide rack is sent into the slice chamber with drive system.Close vacuum valve simultaneously.To the venting of slice chamber, open slice chamber vacuum valve then, take out the slide glass dolly.
Present design can satisfy the various process conditions of this new technology fully, and the function that three vacuum chambers will enter sheet, doping and slice chamber is separated, and makes it and can work simultaneously, has shortened the process time.Since twice required condition of laser doping remove laser-related parameters, other parameter can be identical, these two technical processs is placed on same indoor, can save a vacuum chamber, can not influence its production efficiency and automaticity simultaneously.
Because the laser doping vacuum chamber can directly not be exposed among the atmosphere, and the atmospheric condition in the doping process is maintained a good state, and helps guaranteeing processing quality.The slide glass dolly has taken into full account the difference of output under fragility and the different production line condition of silicon chip, simplicity of design and can be according to the slide glass amount of output different adjustment per car.The drive system of three vacuum chambers can independent stepless speed regulation; Can fully guarantee to the demands of different of drive system, to change like the process conditions demand in the different processes stage; Drive system also can flexiblely satisfy its requirement, increases its compatibility of apparatus.As in the present embodiment, adopt the linear laser device, the setting of transmission speed and the requirement of laser power and doping depth then need be considered in the doping chamber in the doping process.Independent speed governing can realize under the situation that does not influence other process procedure, makes this change become easy.
The utility model provides a kind of Equipment Design scheme for preparing selective emitter of crystal silicon solar cell; Be a kind of new equipment scheme,, realize that specifically the method for this technical scheme and approach also have a lot according to the thinking and the method for present design corresponding to new technology; The above only is the preferred implementation of the utility model; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from patent art scheme principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection range of this patent.The all available prior art of each part not clear and definite in the present embodiment realizes.
Claims (8)
1. equipment for preparing selective emitter of crystal silicon solar cell; Comprise continuous vacuum chamber, air-path control system; Electric-control system, vacuum-pumping system, laser system etc.; It is characterized in that the continuous vacuum chamber is three Room, will advance sheet, slice, three process procedures of doping and separate; The laser doping system that is arranged in said laser doping chamber is two covers, and laser light dope system is used at the ultra shallow junction of surface of crystalline silicon preparation, and laser heavy doping system carries out heavy doping to the grid positions on the crystal silicon chip makes ultra shallow junction become selective emitter;
Segmentation can independent stepless speed regulation drive system, adapt to the different transfer rate of each segment process.
2. a kind of equipment for preparing selective emitter of crystal silicon solar cell as claimed in claim 1 is characterized in that said laser system is located at directly over the vacuum chamber, can see through windowpane and shine on the substrate.
3. a kind of equipment for preparing selective emitter of crystal silicon solar cell as claimed in claim 1 is characterized in that said light laser doping system is positioned at heavily laser doping system front.
4. a kind of equipment for preparing selective emitter of crystal silicon solar cell as claimed in claim 1 is characterized in that, advances in the sheet chamber to be provided with heater, can preheat substrate.
5. a kind of equipment for preparing selective emitter of crystal silicon solar cell as claimed in claim 1 is characterized in that being provided with heater in the laser doping vacuum chamber, in technical process, can carry out the background preheating to substrate.
6. a kind of equipment for preparing selective emitter of crystal silicon solar cell as claimed in claim 1, it is characterized in that the cloth air chamber be located at the laser doping vacuum chamber under, realize even distribution impurity gas.
7. a kind of equipment for preparing selective emitter of crystal silicon solar cell as claimed in claim 1 is characterized in that being made as between drive system and slide glass dolly the friction type transmission, guarantees that transfer rate is steadily even.
8. a kind of equipment for preparing selective emitter of crystal silicon solar cell as claimed in claim 1 is characterized in that can setting up surge chamber between said turnover sheet chamber and the laser doping chamber, can guarantee the processing atmosphere that laser doping is indoor better.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202533290U CN202127036U (en) | 2011-07-11 | 2011-07-11 | Equipment for preparing selective emitter of crystalline silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202533290U CN202127036U (en) | 2011-07-11 | 2011-07-11 | Equipment for preparing selective emitter of crystalline silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202127036U true CN202127036U (en) | 2012-01-25 |
Family
ID=45490099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202533290U Expired - Fee Related CN202127036U (en) | 2011-07-11 | 2011-07-11 | Equipment for preparing selective emitter of crystalline silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202127036U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219421A (en) * | 2013-03-27 | 2013-07-24 | 中国科学院上海光学精密机械研究所 | Method for manufacturing vertical multi-junction solar cell piece by laser |
-
2011
- 2011-07-11 CN CN2011202533290U patent/CN202127036U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219421A (en) * | 2013-03-27 | 2013-07-24 | 中国科学院上海光学精密机械研究所 | Method for manufacturing vertical multi-junction solar cell piece by laser |
| CN103219421B (en) * | 2013-03-27 | 2015-05-13 | 中国科学院上海光学精密机械研究所 | Method for manufacturing vertical multi-junction solar cell piece by laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8691619B2 (en) | Laminated structure for CIS based solar cell, and integrated structure and manufacturing method for CIS based thin-film solar cell | |
| CN103594561B (en) | Method for manufacturing Cu2ZnSn(S, Se)4 solar battery absorbing layer through oxide thin film in vulcanizing and selenizing mode | |
| CN103184347B (en) | Preparation method of high purity cadmium | |
| CN103151248B (en) | The disperser of zinc and method of diffusion thereof during a kind of photodetector makes | |
| CN106975855B (en) | Welding device suitable for manufacturing high-temperature superconducting joint | |
| CN202127036U (en) | Equipment for preparing selective emitter of crystalline silicon solar battery | |
| CN104900762A (en) | Automatic film photovoltaic dispensing interconnection system and method | |
| CN102820371A (en) | Device for preparing selective emitter of crystalline silicon solar cell | |
| CN102260907B (en) | Preparation method of ZnO nano homogeneous p-n junction array | |
| CN201336302Y (en) | Automatic silicon wafer loading machine | |
| CN204029833U (en) | Silicon chip and solar cell piece feeding device | |
| CN202192323U (en) | Automatic cutting device for solar cell plate welding strip | |
| CN203509276U (en) | Cooling device for welded solar cell panel | |
| CN105020912B (en) | Offset measuring and adjusting system and method for multiple cascaded trough-type solar heat collecting pipes | |
| CN203530506U (en) | Silicon chip diffusion furnace for solar battery | |
| CN203325957U (en) | Crystalline silicon oxidation processing device for solar energy cell sheet passivation | |
| CN203144492U (en) | Tungsten-base alloy scrap material recovery furnace | |
| CN103219421B (en) | Method for manufacturing vertical multi-junction solar cell piece by laser | |
| Birkmire | Recent progress and critical issues in thin film polycrystalline solar cells and modules | |
| CN103248270B (en) | GaAs solar energy three grades of Blast Furnace Top Gas Recovery Turbine Unit (TRT) of UTILIZATION OF VESIDUAL HEAT IN can be realized | |
| CN201678731U (en) | System of flat PECVD silicon nitride film | |
| CN102477583A (en) | Method for preparing ultra-shallow junctions by doping crystalline silicon film | |
| CN109524508A (en) | A kind of patch curing apparatus of solar battery | |
| CN209199970U (en) | A kind of transmission device of patch curing apparatus | |
| CN209071369U (en) | A kind of patch curing apparatus of solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120125 Termination date: 20120711 |