CN202121519U - Efficient inverter with direct current electromagnetic interference resistance - Google Patents
Efficient inverter with direct current electromagnetic interference resistance Download PDFInfo
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- CN202121519U CN202121519U CN2011200517293U CN201120051729U CN202121519U CN 202121519 U CN202121519 U CN 202121519U CN 2011200517293 U CN2011200517293 U CN 2011200517293U CN 201120051729 U CN201120051729 U CN 201120051729U CN 202121519 U CN202121519 U CN 202121519U
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Abstract
The utility model relates to an efficient inverter with simple structure, which is suitable to promote the efficiency of an inverter and improve the direct current electromagnetic interference resistance, and comprises four MOS transistors, two IGBTs, two diodes and two filtering inductances, wherein in the working process, a microcontroller allows the first IGBT to be conductive for half power frequency period, simultaneously the first and fourth MOS transistors and the second IGBT are cut off, the second and third MOS transistors perform high frequency synchronization switching under the synchronization triggering of high frequency trigger signals, such that the outer side ends of the first and second filtering inductances output the positive semi-period of an alternating current power supply; and the microcontroller allows the second IGBT to be conductive for half power frequency period, simultaneously the second and third MOS transistors and the first IGBT are cut off, the first and fourth MOS transistors perform high frequency synchronization switching under the synchronization triggering of high frequency trigger signals, such that the outer side ends of the first and second filtering inductances output the negative semi-period of the alternating current power supply, repeatedly like this.
Description
Technical field
The utility model relates to the technical field of inverter, the high-efficiency inversion device that outstanding reference and a kind of anti-direct solenoid are disturbed.
Background technology
Inverter is a kind of device for converting electric energy, the main realization by direct current to the power conversion that exchanges.Combining inverter comprises photovoltaic combining inverter, wind energy combining inverter, fuel cell combining inverter etc.The energy efficient that combining inverter can produce regenerative resource can convert into can and be connected to civil power with civil power same frequency, synchronous alternating current.
Divide by its circuit form: semi-bridge inversion power supply and full bridge inverse conversion power.Wherein, the control mode of full-bridge inverter power supply has two kinds: single-polarity PWM modulation, bipolarity PWM modulation.Bipolarity PWM modulates two switching tube complementary drive of same brachium pontis; Because the inconsistency of switching tube conducting, cut-off characteristics and the control circuit parameter of Dead Time is inconsistent; Possibly cause two switching tubes conducting simultaneously of same brachium pontis, and then cause switching tube to damage.Single-polarity PWM control has: all have only a switching tube to make high frequency in the civil power positive-negative half-cycle and switch, cause the utilance of outputting inductance to descend, and then reduced the efficient of inverter power supply; Simultaneously, the DC EMI of this kind control mode (direct solenoid interference) problem is also very outstanding.
The utility model content
The technical problem that the utility model will solve provide a kind of simple in structure, be suitable for promoting inverter efficiency and improve the high-efficiency inversion device that direct solenoid is disturbed.
In order to solve the problems of the technologies described above; The high-efficiency inversion device that the utility model provides a kind of anti-direct solenoid to disturb is characterized in comprising: four metal-oxide-semiconductor S1, S2, S3 and S4, two IGBT pipe S5 and S6, two diode D1 and D2 and two filter inductance L1 and L2; The current input terminal of first, second metal-oxide-semiconductor S1, S2 links to each other with the positive pole of DC power supply SG; The current output terminal of the first metal-oxide-semiconductor S1 links to each other with the current input terminal of IGBT pipe S5 with the 3rd metal-oxide-semiconductor S3 simultaneously; Three, the current output terminal of the 4th metal-oxide-semiconductor S3, S4 links to each other with the negative pole of DC power supply SG; The current output terminal of the second metal-oxide-semiconductor S2 links to each other with the current input terminal of the 2nd IGBT pipe S6 and the interior side terminal of the second filter inductance L2 simultaneously, and the current output terminal of the 2nd IGBT pipe S6 links to each other with the current input terminal of the 4th metal-oxide-semiconductor S4 and the anode of the first diode D1 simultaneously; The current output terminal of the first metal-oxide-semiconductor S1 links to each other with the negative electrode of the first diode D1 and the interior side terminal of the first filter inductance L1 simultaneously, and the outboard end of first, second filter inductance L1, L2 is an ac power output; The current output terminal of the one IGBT pipe S5 links to each other with the anode of the second diode D2, and the negative electrode of the second diode D2 links to each other with the interior side terminal of the second filter inductance L2.
Further, the positive and negative electrode two ends of said DC power supply SG are provided with filter capacitor C1, are used to reduce inversion link input ripple.DC power supply SG is the dc energy generation device, for example: solar panel, wind energy, fuel cell etc.
Further; The control end of said the first, the 4th metal-oxide-semiconductor S1, S4 links to each other with the first high-frequency pulse signal output of a microcontroller MCU through a modulation circuit respectively, and the control end of said second, third metal-oxide-semiconductor S2, S3 links to each other with the second high-frequency pulse signal output of microcontroller MCU through modulation circuit respectively; Said two IGBT pipe S5 links to each other with two power frequency pulse signal output ends of microcontroller MCU respectively with S6; Outside termination AC load or the electrical network Grid of the said first filter inductance L1 and the second filter inductance L2.
Further, said modulation circuit is used for the high-frequency pulse signal and a sinusoidal signal of microcontroller MCU output are modulated into the high frequency trigger signal that is used to drive said four metal-oxide-semiconductor S1, S2, S3 and S4; AC power Vgrid same frequency and same-phase on said sinusoidal signal and said AC load or the electrical network Grid.
Further; Said microcontroller MCU is connected with the phase detector that is used to detect the AC power Vgrid phase place on the said electrical network Grid; So that the phase place of the AC power Vgrid on the phase place of said sinusoidal signal and the said electrical network Grid is identical; Make the first power frequency pulse signal and the said sinusoidal signal same-phase that are used to control IGBT pipe S5 of microcontroller MCU output simultaneously, make the second power frequency pulse signal and the said sinusoidal signal antiphase that are used to control the 2nd IGBT pipe S6 of microcontroller MCU output.
The technique scheme of the utility model is compared prior art and had the following advantages: the high-efficiency inversion device of (1) the utility model is with respect to the conventional full bridge circuit; On each brachium pontis, all increased a high frequency transistor; Feasible no matter at positive half cycle or negative half period; Two inductance are worked simultaneously, when improving the inductance utilance, have improved DC EMI problem.For traditional inverter circuit structure, this structure has improved the utilance of inductance, has reduced the afterflow path, and then has promoted overall efficiency; Reduce the DC EMI of machine simultaneously, made the inverter various aspects of performance promote.(2), because the introducing of current following device; Make energy storage device (being capacitor C 1) not participate in the afterflow process; The current potential that A among Fig. 1, B are 2 current potential in the afterflow process keeps equal basically, and inverter mode and afterflow state A, 2 potential change amounts of B are less, and this has reduced DC EMI problem.(3), four transistors of the employing of the inverter in the utility model are all done the high frequency switching; No matter this makes in positive-negative half-cycle; The current potential of the interior side terminal of two filter inductance L1 and L2 all is high-frequency impulse, and its outer side terminal is a civil power, and this has improved the utilance of filter inductance.(4), the utility model introduces continuous current circuit, makes continuous current circuit shorten, and promoted efficient thereby reduce the wastage.All can have two transistors to do high frequency at civil power positive and negative half cycle and switch, corresponding low-frequency transistor and diode are done afterflow.Have a low-frequency transistor at civil power plus or minus half cycle and participate in power conversion.Neither participation power conversion of the parasitic diode of all crystals pipe and afterflow.
Description of drawings
For the content that makes the utility model is more clearly understood, below basis specific embodiment and combine accompanying drawing, the utility model is done further detailed explanation, wherein
Fig. 1 is the structural representation of the high-efficiency inversion device among the embodiment;
Fig. 2 is the circuit block diagram of the control section of the high-efficiency inversion device among the embodiment;
Oscillogram when Fig. 3 is the high-efficiency inversion device work among the embodiment on each parts;
Current circuit sketch map when Fig. 4 exports positive half cycle alternating current for the high-efficiency inversion device among the embodiment;
Continuous current circuit sketch map when Fig. 5 exports positive half cycle alternating current for the high-efficiency inversion device among the embodiment;
Current circuit sketch map when Fig. 6 is the high-efficiency inversion device output negative half period alternating current among the embodiment;
Continuous current circuit sketch map when Fig. 7 is the high-efficiency inversion device output negative half period alternating current among the embodiment.
Embodiment
See Fig. 1-7; The high-efficiency inversion device that the anti-direct solenoid of present embodiment is disturbed comprises: in order to solve the problems of the technologies described above; The utility model provides a kind of high-efficiency inversion device, is characterized in comprising: four metal-oxide-semiconductor S1, S2, S3 and S4, two IGBT pipe S5 and S6, two diode D1 and D2 and two filter inductance L1 and L2; The current input terminal of first, second metal-oxide-semiconductor S1, S2 links to each other with the positive pole of DC power supply SG; The current output terminal of the first metal-oxide-semiconductor S1 links to each other with the current input terminal of IGBT pipe S5 with the 3rd metal-oxide-semiconductor S3 simultaneously; Three, the current output terminal of the 4th metal-oxide-semiconductor S3, S4 links to each other with the negative pole of DC power supply SG; The current output terminal of the second metal-oxide-semiconductor S2 links to each other with the current input terminal of the 2nd IGBT pipe S6 and the interior side terminal of the second filter inductance L2 simultaneously, and the current output terminal of the 2nd IGBT pipe S6 links to each other with the current input terminal of the 4th metal-oxide-semiconductor S4 and the anode of the first diode D1 simultaneously; The current output terminal of the first metal-oxide-semiconductor S1 links to each other with the negative electrode of the first diode D1 and the interior side terminal of the first filter inductance L1 simultaneously, and the outboard end of first, second filter inductance L1, L2 is an ac power output; The current output terminal of the one IGBT pipe S5 links to each other with the anode of the second diode D2, and the negative electrode of the second diode D2 links to each other with the interior side terminal of the second filter inductance L2.
The positive and negative electrode two ends of said DC power supply SG are provided with filter capacitor C1.
The control end of said the first, the 4th metal-oxide-semiconductor S1, S4 links to each other with the first high-frequency pulse signal output of a microcontroller MCU through a modulation circuit respectively, and the control end of said second, third metal-oxide-semiconductor S2, S3 links to each other with the second high-frequency pulse signal output of microcontroller MCU through modulation circuit respectively; Said two IGBT pipe S5 links to each other with two power frequency pulse signal output ends of microcontroller MCU respectively with S6; Outside termination AC load or the electrical network Grid of the said first filter inductance L1 and the second filter inductance L2; Said modulation circuit is used for the high-frequency pulse signal and a sinusoidal signal of microcontroller MCU output are modulated into the high frequency trigger signal that is used to drive said four metal-oxide-semiconductor S1, S2, S3 and S4; AC power Vgrid same frequency and same-phase on said sinusoidal signal and said AC load or the electrical network Grid.
During work; Said microcontroller MCU makes half power frequency period of IGBT pipe S5 conducting; The first, the 4th metal-oxide-semiconductor S1, S4 and the 2nd IGBT pipe S6 are ended; And make second, third metal-oxide-semiconductor S2, S3 do under the synchronous triggering of said high frequency trigger signal high frequency switch synchronously (promptly by and the conducting two states between make high frequency and switch synchronously), so that the positive half cycle of the outboard end output AC power source Vgrid of first, second filter inductance L1, L2; Said then microcontroller MCU makes half power frequency period of the 2nd IGBT pipe S6 conducting; Second, third metal-oxide-semiconductor S2, S3 and IGBT pipe S5 are ended; The first, the 4th metal-oxide-semiconductor S1, S4 make high frequency and switch synchronously under the synchronous triggering of said high frequency trigger signal; So that the negative half period of the outboard end output AC power source Vgrid of first, second filter inductance L1, L2, so repeatedly.
Between the positive half period of the outboard end output AC power source Vgrid of said first, second filter inductance L1, L2; When said high frequency trigger signal is high level; Second, third metal-oxide-semiconductor S2, S3 conducting, the negative pole of the positive pole of DC power supply SG, the second metal-oxide-semiconductor S2, the second filter inductance L2, AC load or electrical network Grid, the first filter inductance L1, the 3rd twin crystal pipe S3 and DC power supply SG constitutes current circuit successively; When high frequency trigger signal was low level, second, third metal-oxide-semiconductor S2, S3 ended, and the second filter inductance L2, AC load or electrical network Grid, the first filter inductance L1, IGBT pipe S5 and the second diode D2 constitute continuous current circuit successively.
Between the negative half-cycle of the outboard end output AC power source Vgrid of said first, second filter inductance L1, L2; When high frequency trigger signal is high level; The first, the 4th metal-oxide-semiconductor S1, S4 conducting, the negative pole of the positive pole of DC power supply SG, the first metal-oxide-semiconductor S1, the first filter inductance L1, AC load or electrical network Grid, the second filter inductance L2, the 4th twin crystal pipe S4 and DC power supply SG constitutes current circuit successively; When high-frequency pulse signal was low level, the first, the 4th metal-oxide-semiconductor S1, S4 ended, and the first filter inductance L1, AC load or electrical network Grid, the second filter inductance L2, the 2nd IGBT pipe S6 and the first diode D1 constitute continuous current circuit successively.
Said microcontroller MCU is connected with the phase detector that is used to detect the AC power Vgrid phase place on the said electrical network Grid; So that the phase place of the AC power Vgrid on the phase place of said sinusoidal signal and the said electrical network Grid is identical; Make the first power frequency pulse signal and the said sinusoidal signal same-phase that are used to control IGBT pipe S5 of microcontroller MCU output simultaneously, make the second power frequency pulse signal and the said sinusoidal signal antiphase that are used to control the 2nd IGBT pipe S6 of microcontroller MCU output.
The control end of said four metal-oxide-semiconductor S1, S2, S3 and S4 is the grid of said metal-oxide-semiconductor; The control end of two IGBT pipe S5 and S6 is the grid that said IGBT manages; The current output terminal of said four metal-oxide-semiconductor S1, S2, S3 and S4 is the source electrode of metal-oxide-semiconductor; The current output terminal of two IGBT pipe S5 and S6 is the emitter of IGBT pipe, and the current input terminal of said four metal-oxide-semiconductor S1, S2, S3 and S4 is the drain electrode of metal-oxide-semiconductor, and the current input terminal of two ICBT pipe S5 and S6 is the collector electrode that IGBT manages.
Said high-frequency pulse signal is the high-frequency pulse signal of 10-100KHz.
Obviously, the foregoing description only be for explain clearly that the utility model does for example, and be not to be qualification to the execution mode of the utility model.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all execution modes.And conspicuous variation that these spirit that belong to the utility model are extended out or change still are among the protection range of the utility model.
Claims (3)
1. the high-efficiency inversion device that anti-direct solenoid is disturbed is characterized in that comprising: IGBT pipe (S5 and S6), two diodes (D1 and D2) and two filter inductances (L1 and L2) of the metal-oxide-semiconductor of four same models (S1, S2, S3 and S4), two same models;
The current input terminal of first, second metal-oxide-semiconductor (S1, S2) links to each other with the positive pole of DC power supply (SG); The current output terminal of first metal-oxide-semiconductor (S1) links to each other with the current input terminal of the 3rd metal-oxide-semiconductor (S3) with IGBT pipe (S5) simultaneously; Three, the current output terminal of the 4th metal-oxide-semiconductor (S3, S4) links to each other with the negative pole of DC power supply (SG); The current output terminal of second metal-oxide-semiconductor (S2) links to each other with the current input terminal of the 2nd IGBT pipe (S6) and the interior side terminal of second filter inductance (L2) simultaneously, and the current output terminal of the 2nd IGBT pipe (S6) links to each other with the current input terminal of the 4th metal-oxide-semiconductor (S4) and the anode of first diode (D1) simultaneously;
The current output terminal of first metal-oxide-semiconductor (S1) links to each other with the negative electrode of first diode (D1) and the interior side terminal of first filter inductance (L1) simultaneously, and the outboard end of first, second filter inductance (L1, L2) is an ac power output;
The current output terminal of the one IGBT pipe (S5) links to each other with the anode of second diode (D2), and the negative electrode of second diode (D2) links to each other with the interior side terminal of second filter inductance (L2); The positive and negative electrode two ends of stating DC power supply (SG) are provided with filter capacitor (C1).
2. the high-efficiency inversion device that anti-direct solenoid according to claim 1 is disturbed; It is characterized in that: the control end of said the first, the 4th metal-oxide-semiconductor (S1, S4) links to each other with the first high-frequency pulse signal output of a microcontroller (MCU) through a modulation circuit respectively, and the control end of said second, third metal-oxide-semiconductor (S2, S3) links to each other with the second high-frequency pulse signal output of microcontroller (MCU) through modulation circuit respectively; Said two IGBT pipes (S5 and S6) link to each other with two power frequency pulse signal output ends of microcontroller (MCU) respectively; The outside termination AC load of said first filter inductance (L1) and second filter inductance (L2) or electrical network (Grid).
3. the high-efficiency inversion device that anti-direct solenoid according to claim 2 is disturbed, it is characterized in that: said microcontroller (MCU) is connected with the phase detector of AC power (Vgrid) phase place that is used to detect on the said electrical network (Grid).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011200517293U CN202121519U (en) | 2011-03-02 | 2011-03-02 | Efficient inverter with direct current electromagnetic interference resistance |
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| CN2011200517293U CN202121519U (en) | 2011-03-02 | 2011-03-02 | Efficient inverter with direct current electromagnetic interference resistance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611344A (en) * | 2012-03-21 | 2012-07-25 | 苏州欧姆尼克新能源科技有限公司 | Inverter circuit device for photovoltaic electricity generation |
-
2011
- 2011-03-02 CN CN2011200517293U patent/CN202121519U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611344A (en) * | 2012-03-21 | 2012-07-25 | 苏州欧姆尼克新能源科技有限公司 | Inverter circuit device for photovoltaic electricity generation |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518109 SHENZHEN, GUANGDONG PROVINCE TO: 518000 SHENZHEN, GUANGDONG PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20120405 Address after: 12 B building, 3 storey West building, Xicheng Industrial Zone, Xixiang street, Shenzhen, Guangdong, Baoan District 518000, China Patentee after: Shenzhen Growatt New Energy Technology Co., Ltd. Address before: 518109, No. 3, building A, building 2, building No. 12, West Industrial Zone, Xixiang street, Shenzhen, Guangdong, Baoan District Province, China, Patentee before: Shenzhen Growatt New Energy Co., Ltd. |
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| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 518000, Shiyan City, Guangdong, Baoan District Province, on the west side of the village on the west side of the village, three industrial zone, five floors, the east of the Shenzhen Patentee after: Shenzhen Growatt New Energy Co., Ltd. Address before: 12 B building, 3 storey West building, Xicheng Industrial Zone, Xixiang street, Shenzhen, Guangdong, Baoan District 518000, China Patentee before: Shenzhen Growatt New Energy Technology Co., Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120118 |