CN202049131U - Capacitive relative humidity sensor of microelectronic mechanical system - Google Patents

Capacitive relative humidity sensor of microelectronic mechanical system Download PDF

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Publication number
CN202049131U
CN202049131U CN2011201162819U CN201120116281U CN202049131U CN 202049131 U CN202049131 U CN 202049131U CN 2011201162819 U CN2011201162819 U CN 2011201162819U CN 201120116281 U CN201120116281 U CN 201120116281U CN 202049131 U CN202049131 U CN 202049131U
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China
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capacitance electrode
electrode
common port
humidity sensor
free end
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CN2011201162819U
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Chinese (zh)
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赵成龙
黄庆安
秦明
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Southeast University
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Southeast University
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Abstract

The utility model discloses a capacitive relevant humidity sensor of a microelectronic mechanical system, which is characterized in that the humidity sensor comprises a substrate (1) provided with a cavity (5), an oxidization layer (2) arranged on the substrate (1), a first capacitor electrode (3) and a second capacitor electrode (4), wherein the first capacitor electrode (3) and the second capacitor electrode (4) are respectively arranged on the oxidization layer (2) an above the cavity (5); the first capacitor electrode (3) comprises a plurality of parallel first electrodes (33) and a first common port (31) for connecting the first electrodes (33) together; each first electrode (33) is provided with a first free end (31) opposite to the first common port (31); and the first electrode (33) is connected with the first common port (31) and the first free end (32). The capacitive relevant humidity sensor of the microelectronic mechanical system has low cost, high precision, strong anti-interference performance and desirable long-term stability.

Description

The microelectromechanical systems Relative Humidity Sensor
Technical field
The utility model relates to a kind of MEMS(microelectromechanical systems based on standard CMOS (complementary metal oxide semiconductor (CMOS)) technology) Relative Humidity Sensor, especially a kind of MEMS relative humidity sensor that adopts air as the humidity sensitive medium.
Background technology
Moisture measurement has important use in fields such as industrial and agricultural production, national defence aviation, weather forecast, health care, food processing, environmental protection.Humidity sensor has developed a lot of years as the important component part in the humidity measurement system.Develop into the miniature humidity sensor that can adopt standard CMOS process to make at present by traditional humidity sensors such as initial psychrometer, hair hygrometers.The humidity sensor that processes with standard CMOS process has low in energy consumption, advantages such as volume is little, price is low, good product consistency, is the focus of humidity sensor research in recent years.In addition, utilize standard CMOS process easily that humidity sensor and testing circuit monolithic is integrated, can improve the stability and the antijamming capability of Humidity Detection system like this.2004, Chinese Gu Lei has proposed the relative humidity sensor that a kind of CMOS of utilization technology is made, the sensing unit of this humidity sensor is the interdigital capacitor structure, palisade polysilicon heating resistor is placed the below of broach shape electrode, adopt polyimide as the humidity sensitive medium, highly sensitive, the linearity is good, but the hysteresis characteristic of sensor is not fine, and response is slower, heater circuit work can improve the temperature of humidity sensitive unit, and then accelerates the response speed of sensor, but the power consumption of sensor is increased.2006, Chinese Peng Shaohua has proposed a kind of humidity sensor of CMOS process compatible, this humidity sensor adopts polyimide as the humidity sensitive medium, testing circuit and humidity sensitive electric capacity monolithic is integrated, the humidity sensitive changes in capacitance is converted into change in voltage output, be convenient to the rear end detection system and carry out signal sampling and processing, but the humidity sensor response speed of this structure is slower.
Summary of the invention
Technical matters:The technical problems to be solved in the utility model is to propose MEMS Relative Humidity Sensor a kind of and the standard CMOS process compatibility, and it is fast to have response speed, linearity height, advantage such as temperature drift is little, and is simple in structure, and substrate is parasitic little.
Technical scheme:For solving the problems of the technologies described above, the utility model proposes a kind of MEMS Relative Humidity Sensor, this humidity sensor comprises the substrate that is provided with cavity, be located at the oxide layer on the substrate, be separately positioned on first capacitance electrode and second capacitance electrode on the oxide layer, first capacitance electrode and second capacitance electrode are arranged on the cavity top, first capacitance electrode comprises some first parallel electrodes, first common port that first electrode is linked together, each first electrode is provided with first free end relative with first common port, first electrode connects first common port and first free end, second capacitance electrode comprises some second parallel electrodes, second common port that second electrode is linked together, each second electrode is provided with second free end relative with second common port, and second electrode connects second common port and second free end; First free end does not contact with second common port, and second free end does not contact with first common port.
Preferably, be provided with second capacitance electrode between the first adjacent capacitance electrode, be provided with first capacitance electrode between the second adjacent capacitance electrode, first common port of first capacitance electrode and first free end all are fixed on the oxide layer, and second common port and second free end of the second capacitance electrode phase all are fixed on the oxide layer.
Preferably, first capacitance electrode, second capacitance electrode are respectively the aluminium electrode.
Beneficial effect:The utility model processing step is simple, utilizes standard CMOS process to combine with the MEMS process technology and makes, and cost is low, the precision height, and strong interference immunity, long-time stability are good.The humidity sensor that the utility model proposes adopts air as the humidity sensitive medium, linearity height, temperature drift is little, the oxide layer corrosion of substrate and top thereof is formed cavity, be air between the above and below of capacitance electrode and the capacitance electrode like this, make the response speed of sensor accelerate, the substrate ghost effect reduces.
Description of drawings
Fig. 1 is the vertical view of the MEMS Relative Humidity Sensor that provides of the utility model, has among the figure: oxide layer 2, the first electrodes 33, the second electrodes 43, first common port, 31, the second common ports, 41, the first free ends, 32, the second free ends 42, first press welding block, 34, the second press welding blocks 44, cavity 5; Fig. 2 is the sectional view of the MEMS Relative Humidity Sensor that provides of the utility model, has among the figure: substrate 1, oxide layer 2, the first capacitance electrodes 3, the second capacitance electrodes 4, cavity 5.
Embodiment
Below in conjunction with accompanying drawing the utility model is described further.
The utility model is a kind of MEMS Relative Humidity Sensor, by substrate, oxide layer, capacitance electrode is formed, oxide layer is located on the substrate, capacitance electrode is located on the oxide layer, capacitance electrode is drawn by press welding block, the oxide layer of corrosion substrate and top thereof, form cavity, make to be air between the above and below of capacitance electrode and the capacitance electrode, capacitance electrode is broach shape electrode and is staggered, the free end of the common port of every group of broach shape electrode and broach shape electrode all is fixed on the oxide layer, to guarantee the physical strength of capacitance electrode.
Referring to Fig. 1-2, the utility model is a kind of MEMS Relative Humidity Sensor, by substrate 1, oxide layer 2, first capacitance electrode 3, second capacitance electrode 4 is formed, oxide layer 2 is located on the substrate 1, first capacitance electrode 3 and second capacitance electrode 4 are located on the oxide layer 2, first capacitance electrode 3 and second capacitance electrode 4 are drawn respectively by first press welding block 34 and second press welding block 44, the oxide layer 2 of corrosion substrate 1 and top thereof, form cavity 5, make the below of the win capacitance electrode 3 and second capacitance electrode 4 also be air, first capacitance electrode 3 and second capacitance electrode 4 are broach shape electrode and are staggered, first free end 32 and second free end 42 of first common port 31 of every group of broach shape electrode and second common port 41 and broach shape electrode all are fixed on the oxide layer 2, to guarantee the physical strength of first capacitance electrode 3 and second capacitance electrode 4.
A kind of MEMS Relative Humidity Sensor that the utility model provides, referring to Fig. 1, Fig. 2, this humidity sensor comprises a kind of MEMS Relative Humidity Sensor, this humidity sensor comprises the substrate 1 that is provided with cavity 5, be located at the oxide layer 2 on the substrate 1, be separately positioned on first capacitance electrode 3 and second capacitance electrode 4 on the oxide layer 2, first capacitance electrode 3 and second capacitance electrode 4 are arranged on cavity 5 tops, first capacitance electrode 3 comprises some first parallel electrodes 33, first common port 31 that first electrode 33 is linked together, each first electrode 33 is provided with first free end 32 relative with first common port 31, first electrode 33 connects first common port 31 and first free end 32, second capacitance electrode 4 comprises some second parallel electrodes 43, second common port 41 that second electrode 43 is linked together, each second electrode 43 is provided with second free end 42, the second electrodes 43 relative with second common port 41 and connects second common port 41 and second free ends 42; First free end 32 does not contact with second common port 41, and second free end 42 does not contact with first common port 31.
Be provided with second capacitance electrode 4 between the first adjacent capacitance electrode 3, be provided with first capacitance electrode 3 between the second adjacent capacitance electrode 4, first common port 31 and first free end 32 of first capacitance electrode 3 all are fixed on the oxide layer 2, and second common port 41 and second free end 42 of second capacitance electrode, 4 phases all are fixed on the oxide layer 2.
Wherein, first capacitance electrode 3 is drawn by first press welding block 34, and second capacitance electrode 4 is drawn by second press welding block 44.
First capacitance electrode 3, second capacitance electrode 4 are respectively the aluminium electrode.
Substrate 1 is a body silicon in the present embodiment, oxide layer 2 is a silicon dioxide, first capacitance electrode 3 and second capacitance electrode 4 are the aluminium electrode, the utility model can be made of following technology: growth layer of oxide layer 2 on silicon substrate 1, then at silicon substrate 1 back side deposit one deck silicon nitride, restraining barrier as the silicon substrate corrosion, form first capacitance electrode 3 and second capacitance electrode 4 and first press welding block 34 and second press welding block 44 in silicon substrate 1 positive sputtered aluminum and etching, the silicon nitride barrier at the etching silicon chip back side forms the corrosion window of silicon substrate 1, utilize the body silicon anisotropic etching to corrode then from silicon substrate 1 back side to oxide layer 2 directions, the etchant solution of selecting for use to the corrosion rate of oxide layer 2 much smaller than the corrosion rate of this etchant solution to silicon substrate 1, when being corroded to oxide layer 2, silicon substrate 1 thinks that the corrosion of silicon substrate 1 finishes, at this moment in silicon substrate 1, obtain a cavity, the oxide layer 2 of this cavity top eroded just obtain cavity 5, this moment, the below of first capacitance electrode 3 and second capacitance electrode 4 also be an air, the silicon nitride barrier at silicon substrate 1 back side was eroded at last again.
The electric capacity that first capacitance electrode 3 and second capacitance electrode 4 constitute with air as the humidity sensitive medium, when ambient humidity changes, the specific inductive capacity of air can change, thereby make the humidity sensitive capacitance change, utilize capacitive detection circuit the humidity sensitive changes in capacitance to be detected the information that just can obtain ambient humidity again.Owing to be air between the above and below of first capacitance electrode 3 and second capacitance electrode 4 and first capacitance electrode 3 and second capacitance electrode 4, when ambient humidity changed, sensor is response fast.

Claims (3)

1. microelectromechanical systems Relative Humidity Sensor, it is characterized in that: this humidity sensor comprises the substrate (1) that is provided with cavity (5), be located at the oxide layer (2) on the substrate (1), be separately positioned on first capacitance electrode (3) and second capacitance electrode (4) on the oxide layer (2), first capacitance electrode (3) and second capacitance electrode (4) are arranged on cavity (5) top, first capacitance electrode (3) comprises some parallel first electrodes (33), first common port (31) that first electrode (33) is linked together, each first electrode (33) is provided with first free end (32) relative with first common port (31), first electrode (33) connects first common port (31) and first free end (32), second capacitance electrode (4) comprises some parallel second electrodes (43), second common port (41) that second electrode (43) is linked together, each second electrode (43) is provided with second free end (42) relative with second common port (41), and second electrode (43) connects second common port (41) and second free end (42); First free end (32) does not contact with second common port (41), and second free end (42) does not contact with first common port (31).
2. microelectromechanical systems Relative Humidity Sensor according to claim 1, it is characterized in that: be provided with second capacitance electrode (4) between adjacent first capacitance electrode (3), be provided with first capacitance electrode (3) between adjacent second capacitance electrode (4), first common port (31) of first capacitance electrode (3) and first free end (32) all are fixed on the oxide layer (2), and second common port (41) and second free end (42) of second capacitance electrode (4) phase all are fixed on the oxide layer (2).
3. microelectromechanical systems Relative Humidity Sensor according to claim 1 and 2 is characterized in that: first capacitance electrode (3), second capacitance electrode (4) are respectively the aluminium electrode.
CN2011201162819U 2011-04-20 2011-04-20 Capacitive relative humidity sensor of microelectronic mechanical system Expired - Fee Related CN202049131U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102262107A (en) * 2011-04-20 2011-11-30 东南大学 Capacitive relative humidity sensor for micro-electromechanical system
CN103792268A (en) * 2014-02-19 2014-05-14 苏州能斯达电子科技有限公司 Differential capacitance type hydrogen sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102262107A (en) * 2011-04-20 2011-11-30 东南大学 Capacitive relative humidity sensor for micro-electromechanical system
CN103792268A (en) * 2014-02-19 2014-05-14 苏州能斯达电子科技有限公司 Differential capacitance type hydrogen sensor
CN103792268B (en) * 2014-02-19 2015-12-09 苏州能斯达电子科技有限公司 A kind of differential capacitance type hydrogen gas sensor

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Granted publication date: 20111123

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