CN202038868U - Polycrystalline silicon reduction device - Google Patents

Polycrystalline silicon reduction device Download PDF

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Publication number
CN202038868U
CN202038868U CN2011202661015U CN201120266101U CN202038868U CN 202038868 U CN202038868 U CN 202038868U CN 2011202661015 U CN2011202661015 U CN 2011202661015U CN 201120266101 U CN201120266101 U CN 201120266101U CN 202038868 U CN202038868 U CN 202038868U
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polycrystalline silicon
stage
silicon reducing
furnaces
polysilicon
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CN2011202661015U
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Chinese (zh)
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王春龙
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/10Process efficiency

Abstract

The utility model relates to a polycrystalline silicon reduction device, which comprises at least two polycrystalline silicon reduction furnaces. The polycrystalline silicon reduction furnaces are serially connected at multiple stages or are connected in parallel and then are serially connected at multiple stages. The number of the stages is at least two. At least one polycrystalline silicon reduction furnace is arranged at each stage. The polycrystalline silicon reduction device has the beneficial effects that: 1) heat exchange devices and condensing devices are omitted or the quantity or the power of the heat exchange devices, the condensing device and tail gas separation, refrigeration and recovery devices are greatly reduced, the investment in fixed assets and the occupied land are greatly reduced, and the consumed energy and the operating expenses of the devices are saved; 2) heat energy is fully utilized, energy is saved and environment is protected; 3) the emission of tail gas is greatly reduced; and 4) raw materials fully react, yield is improved and production capacity is improved.

Description

A kind of polysilicon reducing apparatus
Technical field
The utility model relates to a kind of polycrystalline silicon production device, especially a kind of polysilicon reducing apparatus that is used to produce polysilicon.
Background technology
Along with development of science and technology, the development of photovoltaic industry and semi-conductor industry is also more and swifter and more violent.As the polysilicon of the main raw material of photovoltaic industry and semi-conductor industry, its industrial requirement also is increasing.
At present, the method that industry is produced polysilicon has multiple, wherein hydrogen reduction method comparatively commonly.It is purifying good trichlorosilane and purify good hydrogen as raw material, be passed in the reaction vessel, and under high temperature, pressurized environment, chemical reaction takes place in reaction vessel for both, forms polysilicon, and is deposited on the heating element in the reaction vessel.Along with the continuation of chemical reaction, the polysilicon that is deposited on the heating element is more and more, and heating element is all covered gradually becomes the rhoptry that an appearance is wrapped in polysilicon, is commonly called as silicon rod.Chemical reaction in the reaction vessel will be proceeded, and polysilicon also can continue to be deposited on the silicon rod, makes the diameter of silicon rod strengthen gradually, to the last reaches predetermined diameter dimension, the chemical reaction in the stopped reaction container.
Industry is used polycrystalline silicon reducing furnace usually, as the reaction vessel of implementing above-mentioned chemical reaction.The performance quality of himself has great influence to the quality of the polysilicon of its production.Common its body of heater that includes base and be connected with base, and generally be many parallel reducing apparatus.Existing reducing apparatus subject matter is, reducing gas reaches reduction temperature in stove, and reduce crystallization, a large amount of heated air (SiHCl3) follows the SiCl4 of high temperature generation to discharge from tail gas simultaneously, because deposition process is too short, cause that disposable casting yield is low, energy loss in vain, energy consumption and tail gas amount in the tail gas be all very big, and these tail gas that are not reduced to solid-state polysilicon also need consume a large amount of refrigerants and cool off recovery, cause the cooling system investment to strengthen, running cost increases.With a kind of traditional polysilicon reducing apparatus as shown in Figure 1, be two polycrystalline silicon reducing furnace 1 parallel connections, its tail gas needs through the heat-exchanger rig radiating and cooling, pass through condenser condenses again, last tail gas separates freezing recovery, this device had both lost the heat energy in the tail gas, needed to set up heat-exchanger rig, condensing works and tail gas again and separated freezing recovery device, and energy consumption height, low the reaching of production capacity are invested greatly.
The utility model content
In order to overcome the problem that the polycrystalline silicon reducing furnace cost height, the energy input that have the industry use now are huge, yield poorly, the utility model provides a kind of polysilicon reducing apparatus, reduces production costs to reach, and reduces energy consumption, the purpose of enhancing productivity.
The technical solution of the utility model is as follows:
A kind of polysilicon reducing apparatus, comprise at least two polycrystalline silicon reducing furnaces, described polycrystalline silicon reducing furnace is that plural serial stage connects, or plural serial stage connection again after the parallel connection, the described multistage two-stage at least of being, every grade is provided with at least one polycrystalline silicon reducing furnace, and the quantity that the polycrystalline silicon reducing furnace that described polysilicon reducing apparatus is every grade is provided with reduces step by step.
Preferably, described polysilicon reducing apparatus is 4 grades, the described first step 4 described polycrystalline silicon reducing furnaces in parallel, the second stage 3 described polycrystalline silicon reducing furnaces in parallel, the third stage 2 described polycrystalline silicon reducing furnaces in parallel, the fourth stage is 1 described polycrystalline silicon reducing furnace, after gathering, the air outlet of 4 described polycrystalline silicon reducing furnaces of the described first step is communicated with the inlet mouth of described partial 3 described polycrystalline silicon reducing furnaces respectively, be communicated with the inlet mouth of 2 described polycrystalline silicon reducing furnaces of the described third stage respectively after gather the air outlet of 3 the described polycrystalline silicon reducing furnaces in the described second stage, the air outlet of 2 described polycrystalline silicon reducing furnaces of the described third stage is gathered the back and is communicated with the inlet mouth of 1 described polycrystalline silicon reducing furnace of the described fourth stage.
Preferably, described polysilicon reducing apparatus is 4 grades, the described first step 6 described polycrystalline silicon reducing furnaces in parallel, the second stage 4 described polycrystalline silicon reducing furnaces in parallel, the third stage 2 described polycrystalline silicon reducing furnaces in parallel, the fourth stage is 1 described polycrystalline silicon reducing furnace, after gathering, the air outlet of 6 described polycrystalline silicon reducing furnaces of the described first step is communicated with the inlet mouth of described partial 4 described polycrystalline silicon reducing furnaces respectively, be communicated with the inlet mouth of 2 described polycrystalline silicon reducing furnaces of the described third stage respectively after gather the air outlet of 4 the described polycrystalline silicon reducing furnaces in the described second stage, the air outlet of 2 described polycrystalline silicon reducing furnaces of the described third stage is gathered the back and is communicated with the inlet mouth of 1 described polycrystalline silicon reducing furnace of the described fourth stage.
The beneficial effects of the utility model are, 1, heat-exchanger rig and condensing works have been omitted, or significantly reduced heat-exchanger rig separates freezing recovery device with condensing works and tail gas quantity or power, greatly reduce the investment of fixed capital and to appropriation of land, and saved the energy expenditure and the working cost of this partial devices.2, heat energy is fully used, energy-conserving and environment-protective.3, the tail gas amount significantly reduces.4, raw material produces yield and improves through fully reaction, and production capacity improves.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a kind of structural representation of traditional polysilicon reducing apparatus;
Fig. 2 is the structural representation of the disclosed a kind of polysilicon reducing apparatus of the utility model.
The title of the numeral among the figure or the corresponding component of alphabetical representative:
1, polycrystalline silicon reducing furnace 14, inlet mouth 15, air outlet 2, heat-exchanger rig 3, condensing works 4, device for recovering tail gas
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
Embodiment 1, as shown in Figure 2, a kind of polysilicon reducing apparatus that is used to produce polysilicon that the utility model relates to, comprise 10 polycrystalline silicon reducing furnaces 1, described polycrystalline silicon reducing furnace 1 for after the parallel connection again 4 grades be connected in series, the quantity that the polycrystalline silicon reducing furnace 1 that described polysilicon reducing apparatus is every grade is provided with reduces step by step, be the described first step 4 described polycrystalline silicon reducing furnaces 1 in parallel, the second stage 3 described polycrystalline silicon reducing furnaces 1 in parallel, the third stage 2 described polycrystalline silicon reducing furnaces 1 in parallel, the fourth stage is 1 described polycrystalline silicon reducing furnace 1, after gathering, the air outlet 14 of 4 described polycrystalline silicon reducing furnaces 1 of the described first step is communicated with the inlet mouth 15 of described partial 3 described polycrystalline silicon reducing furnaces 1 respectively, be communicated with the inlet mouth 15 of 2 described polycrystalline silicon reducing furnaces 1 of the described third stage respectively after gather the air outlet 14 of 3 the described polycrystalline silicon reducing furnaces 1 in the described second stage, the air outlet 14 of 2 described polycrystalline silicon reducing furnaces 1 of the described third stage is gathered the back and is communicated with the inlet mouth 1 of 1 described polycrystalline silicon reducing furnace 1 of the described fourth stage.The air outlet 15 of the polycrystalline silicon reducing furnace 1 of the fourth stage connects heat-exchanger rig 2, condensing works 3 and device for recovering tail gas 4 successively.
Principle of work is, earlier purifying good trichlorosilane and purify good hydrogen as raw material, be passed in 4 reactor for polycrystalline silicon 1 of the first step, under high temperature, pressurized environment, chemical reaction takes place in both in 4 reactor for polycrystalline silicon 1, form polysilicon, and be deposited on the heating element in 4 reactor for polycrystalline silicon 1.Along with the continuation of chemical reaction, the polysilicon that is deposited on the heating element is more and more, and heating element is all covered gradually becomes the rhoptry that an appearance is wrapped in polysilicon, is commonly called as silicon rod.A large amount of heated air (SiHCl3) follows the SiCl4 of high temperature generation to discharge from the air outlet 14 of 4 reactor for polycrystalline silicon 1 simultaneously, and by pipe-line transportation in partial 3 polycrystalline silicon reducing furnaces 1, same chemical reaction continues to carry out in partial 3 polycrystalline silicon reducing furnaces 1, in like manner, the SiCl4 that remaining heated air (SiHCl3) follows high temperature to generate discharges from the air outlet 14 of 3 reactor for polycrystalline silicon 1, and by pipe-line transportation in 2 polycrystalline silicon reducing furnaces 1 of the third stage, continue reaction, and enter at last in 1 polycrystalline silicon reducing furnace 1 of the fourth stage and carry out after the last chemical reaction, enter heat-exchanger rig 2, can lead device 3 and device for recovering tail gas 4 to lower the temperature, condensation and Separation and Recovery, at this moment, gradual reaction consumption through 4 level polysilicon reduction furnaces 1, the amount of tail gas significantly reduces, greatly reduce the capacity and the energy consumption of subsequent processing device, in addition, unstripped gas is through reaction of high order, essence is the time that has increased reduction reaction greatly, reaction area and path, make the product yield of raw material also improve greatly, along with the chemical reactions in 10 reactor for polycrystalline silicon 1 altogether carry out, polysilicon also can continue to be deposited on the silicon rod, make the diameter of silicon rod strengthen gradually, to the last reach predetermined diameter dimension, the chemical reaction in the stopped reaction container.Simultaneously, no longer need install heat-exchanger rig 2, can lead device 3 and device for recovering tail gas 4 in each polycrystalline silicon reducing furnace 1 back, and only need install a cover in final stage, and reduce investment in fixed assets greatly and saved the soil, reduce the energy consumption and the operation and maintenance cost of relevant device simultaneously.
Embodiment 2, all the other are identical with embodiment 1, difference is, described polysilicon reducing apparatus is 4 grades, the described first step 6 described polycrystalline silicon reducing furnaces 1 in parallel, the second stage 4 described polycrystalline silicon reducing furnaces 1 in parallel, the third stage 2 described polycrystalline silicon reducing furnaces 1 in parallel, the fourth stage is 1 described polycrystalline silicon reducing furnace 1.
In the foregoing description, the progression of polycrystalline silicon reducing furnace 1 can be 2 grades, three grades or 5 grades, and decision according to actual needs.The quantity of every grade polycrystalline silicon reducing furnace 1 also can be come as required to determine arbitrarily, be reduced step by step as long as satisfy its quantity.
The beneficial effects of the utility model are, 1, heat-exchanger rig and condensing works have been omitted, or significantly reduced heat-exchanger rig separates freezing recovery device with condensing works and tail gas quantity or power, greatly reduce the investment of fixed capital and to appropriation of land, and saved the energy expenditure and the working cost of this partial devices.2, heat energy is fully used, energy-conserving and environment-protective.3, the tail gas amount significantly reduces.4, raw material produces yield and improves through fully reaction, and production capacity improves.
More than be description,, make this area professional and technical personnel can realize or use the utility model by above-mentioned explanation to the disclosed embodiments to the utility model embodiment.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from spirit or scope of the present utility model in other embodiments.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.

Claims (3)

1. polysilicon reducing apparatus, it is characterized in that, comprise at least two polycrystalline silicon reducing furnaces, described polycrystalline silicon reducing furnace is that plural serial stage connects, or plural serial stage connection again after the parallel connection, the described multistage two-stage at least of being, every grade is provided with at least one polycrystalline silicon reducing furnace, and the quantity that the polycrystalline silicon reducing furnace that described polysilicon reducing apparatus is every grade is provided with reduces step by step.
2. polysilicon reducing apparatus according to claim 1, it is characterized in that, described polysilicon reducing apparatus is 4 grades, the described first step 4 described polycrystalline silicon reducing furnaces in parallel, the second stage 3 described polycrystalline silicon reducing furnaces in parallel, the third stage 2 described polycrystalline silicon reducing furnaces in parallel, the fourth stage is 1 described polycrystalline silicon reducing furnace, after gathering, the air outlet of 4 described polycrystalline silicon reducing furnaces of the described first step is communicated with the inlet mouth of described partial 3 described polycrystalline silicon reducing furnaces respectively, be communicated with the inlet mouth of 2 described polycrystalline silicon reducing furnaces of the described third stage respectively after gather the air outlet of 3 the described polycrystalline silicon reducing furnaces in the described second stage, the air outlet of 2 described polycrystalline silicon reducing furnaces of the described third stage is gathered the back and is communicated with the inlet mouth of 1 described polycrystalline silicon reducing furnace of the described fourth stage.
3. polysilicon reducing apparatus according to claim 1, it is characterized in that, described polysilicon reducing apparatus is 4 grades, the described first step 6 described polycrystalline silicon reducing furnaces in parallel, the second stage 4 described polycrystalline silicon reducing furnaces in parallel, the third stage 2 described polycrystalline silicon reducing furnaces in parallel, the fourth stage is 1 described polycrystalline silicon reducing furnace, after gathering, the air outlet of 6 described polycrystalline silicon reducing furnaces of the described first step is communicated with the inlet mouth of described partial 4 described polycrystalline silicon reducing furnaces respectively, be communicated with the inlet mouth of 2 described polycrystalline silicon reducing furnaces of the described third stage respectively after gather the air outlet of 4 the described polycrystalline silicon reducing furnaces in the described second stage, the air outlet of 2 described polycrystalline silicon reducing furnaces of the described third stage is gathered the back and is communicated with the inlet mouth of 1 described polycrystalline silicon reducing furnace of the described fourth stage.
CN2011202661015U 2011-07-26 2011-07-26 Polycrystalline silicon reduction device Expired - Fee Related CN202038868U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102786056A (en) * 2012-09-03 2012-11-21 内蒙古盾安光伏科技有限公司 Device and method for polycrystalline reduction production
CN102897766A (en) * 2011-07-26 2013-01-30 王春龙 Polysilicon reduction apparatus
CN103508457A (en) * 2013-09-30 2014-01-15 天津大学 Production device provided with polycrystalline silicon decomposing furnaces and operation method for production device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102897766A (en) * 2011-07-26 2013-01-30 王春龙 Polysilicon reduction apparatus
CN102786056A (en) * 2012-09-03 2012-11-21 内蒙古盾安光伏科技有限公司 Device and method for polycrystalline reduction production
CN103508457A (en) * 2013-09-30 2014-01-15 天津大学 Production device provided with polycrystalline silicon decomposing furnaces and operation method for production device
CN103508457B (en) * 2013-09-30 2016-06-01 天津大学 Production equipment containing multiple stage polycrystalline silicon decomposing furnace and working method

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