CN201981013U - Trichlorosilane production system - Google Patents
Trichlorosilane production system Download PDFInfo
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- CN201981013U CN201981013U CN2011200570717U CN201120057071U CN201981013U CN 201981013 U CN201981013 U CN 201981013U CN 2011200570717 U CN2011200570717 U CN 2011200570717U CN 201120057071 U CN201120057071 U CN 201120057071U CN 201981013 U CN201981013 U CN 201981013U
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- rectifying tower
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Abstract
A trichlorosilane production system comprises a hydrogenation reactor with a first inlet, a second inlet and an outlet, a condenser communicated with the outlet of the hydrogenation reactor, a hydrogen storer and a condensing material storer which are respectively communicated with the condenser, a first rectifying tower communicated with the condensing material storer, a second rectifying tower communicated with the first rectifying tower, a silicon chloride storer communicated with the second rectifying tower, a silicon chloride carburetor communicated with the silicon chloride storer, a mixer which is respectively communicated with the hydrogen storer and the silicon chloride carburetor, a heater communicated with the mixer and the first inlet of the hydrogenation reactor, a dichlorosilane storer communicated with the first rectifying tower, and a dichlorosilane carburetor which is respectively communicated with the dichlorosilane storer and the second inlet of the hydrogenation reactor. The trichlorosilane production system achieves the dynamic balance of the content of dichlorosilane during operation, not only improves yield, but also reduces consumption of raw materials, thereby obviously lowering cost.
Description
Technical field
The utility model relates to the trichlorosilane production system.
Background technology
The silicon tetrachloride as by-product that at present domestic and international most of polysilicon factory produces when all adopting hot hydrogenation process process for producing polysilicon, have only minority factory to adopt cold hydrogenation technology, and these use the factory of cold hydrogenation technology, all the dichloro-dihydro silicon that produces in the cold hydrogenation production process is separated as byproduct individual curing (referring to Fig. 1), thereby not only reduced production efficiency, and wasted manpower and materials, increased considerably cost.
The utility model content
The purpose of this utility model provides a kind of high-level efficiency, trichlorosilane production system cheaply.
According to trichlorosilane production system of the present utility model, comprising:
Hydrogenation reactor with first inlet, second entrance and exit;
The condenser that is communicated with the outlet of hydrogenation reactor;
Hydrogen storer that is communicated with condenser respectively and condensation material storer;
First rectifying tower that is communicated with condensation material storer;
Second rectifying tower that is communicated with first rectifying tower;
The silicon tetrachloride storer that is communicated with second rectifying tower;
The silicon tetrachloride vaporizer that is communicated with the silicon tetrachloride storer;
The mixing tank that is communicated with hydrogen storer and silicon tetrachloride vaporizer respectively;
The well heater that is communicated with mixing tank, well heater also are communicated with first inlet of hydrogenation reactor;
The dichloro-dihydro silicon memory that is communicated with first rectifying tower; And
The dichloro-dihydro silicon vaporizer that is communicated with the dichloro-dihydro silicon memory, dichloro-dihydro silicon vaporizer also are communicated with second inlet of hydrogenation reactor.
Hydrogenation reactor can also have the 3rd inlet that is used to receive silica flour and catalyzer.
Trichlorosilane production system of the present utility model is separated dichloro-dihydro silicon from hydrogenation reaction product, still lead to back in the hydrogenation reactor after the vaporization, and make the content of dichloro-dihydro silicon reach running balance in operational process.This had both improved output, had reduced consumption of raw materials again, thereby had significantly reduced cost.In addition, in trichlorosilane production system of the present utility model,, therefore increased speed of reaction and improved production efficiency because the free radical of silicon is more active in the dichloro-dihydro silicon.
Description of drawings
Fig. 1 is the block diagram of existing trichlorosilane production system.
Fig. 2 is the block diagram according to trichlorosilane production system of the present utility model.
Embodiment
Referring to Fig. 2, it shows according to trichlorosilane (SiHCl of the present utility model
3) production system.This system comprises: the hydrogenation reactor 1 with first inlet, second entrance and exit; The condenser 2 that is communicated with the outlet of hydrogenation reactor 1; Hydrogen storer 9 that is communicated with condenser 2 and condensation material storer 3 respectively; First rectifying tower 4 that is communicated with condensation material storer 3; Second rectifying tower 5 that is communicated with first rectifying tower 4; Silicon tetrachloride (the SiCl that is communicated with second rectifying tower 5
4) storer 6; The silicon tetrachloride vaporizer 7 that is communicated with silicon tetrachloride storer 6; The mixing tank 8 that is communicated with hydrogen storer 9 and silicon tetrachloride vaporizer 7 respectively; The well heater 12 that is communicated with mixing tank 8; Well heater 12 also is communicated with first inlet of hydrogenation reactor 1; Dichloro-dihydro silicon (the SiH that is communicated with first rectifying tower 4
2Cl
2) storer 10; And the dichloro-dihydro silicon vaporizer 11 that is communicated with dichloro-dihydro silicon memory 10, dichloro-dihydro silicon vaporizer 11 also is communicated with second inlet of hydrogenation reactor 1.
The operating process of trichlorosilane production system of the present utility model is below described.
After vaporizing in silicon tetrachloride vaporizer 7 from the silicon tetrachloride of silicon tetrachloride storer 6 with from the hydrogen of hydrogen storer 9 behind mixing tank 8 uniform mixing, be heated to 590-610 ℃ by well heater 12, be preferably 600 ℃, be introduced into first inlet of hydrogenation reactor 1 then.Be introduced into second inlet of hydrogenation reactor 1 after in dichloro-dihydro silicon vaporizer 11, vaporizing from the dichloro-dihydro silicon of dichloro-dihydro silicon memory 10.Silica flour and catalyzer commonly used are introduced into the 3rd inlet of hydrogenation reactor 1.
After above-mentioned substance in hydrogenation reactor 1 hydrogenation takes place, will comprise gas or hydrogenation reaction product directed toward condenser 2 after the reaction of hydrogen, dichloro-dihydro silicon, trichlorosilane and silicon tetrachloride from the outlet of hydrogenation reactor 1; Separated hydrogen is returned hydrogen storer 9 from condenser 2, and the isolated chlorosilane that comprises dichloro-dihydro silicon, trichlorosilane and silicon tetrachloride is directed to first rectifying tower 4 from condenser 2; Return dichloro-dihydro silicon memory 10 from first rectifying tower, 4 isolated liquid dichloro-dihydro silicon.Return silicon tetrachloride storer 6 from second rectifying tower, 5 isolated liquid silicon tetrachlorides.From second rectifying tower 5, isolate the product trichlorosilane at last.
First inlet and second inlet of hydrogenation reactor 1 are spaced apart usually, can not suffer localized hyperthermia's (about 600 ℃) influence and be decomposed into Si and HCl so that contain the dichloro-dihydro silicon of active silicon free radical, because the generation of a large amount of Si can be stopped up relevant heating installation, cause production system can't carry out operation continuously.
As mentioned above, in system of the present utility model, separated hydrogen, dichloro-dihydro silicon and silicon tetrachloride can be recycled and produce trichlorosilane, wherein, the dichloro-dihydro silicon of separating turns back to hydrogenation reactor 1 again, thereby keeps the running balance of the dichloro-dihydro silicone content in the hydrogenation reactor 1 in operational process.
Therefore, trichlorosilane production system of the present utility model has not only improved speed of reaction and has therefore improved production efficiency, but also can improve output, minimizing consumption of raw materials, thereby significantly reduces production costs.
It will be appreciated by those skilled in the art that above-mentioned embodiment only is used for explaining and explanation the utility model, is not to be used for it is carried out any restriction.
Claims (2)
1. a trichlorosilane production system is characterized in that, comprising:
Hydrogenation reactor with first inlet, second entrance and exit;
The condenser that is communicated with the outlet of hydrogenation reactor;
Hydrogen storer that is communicated with condenser respectively and condensation material storer;
First rectifying tower that is communicated with condensation material storer;
Second rectifying tower that is communicated with first rectifying tower;
The silicon tetrachloride storer that is communicated with second rectifying tower;
The silicon tetrachloride vaporizer that is communicated with the silicon tetrachloride storer;
The mixing tank that is communicated with hydrogen storer and silicon tetrachloride vaporizer respectively;
The well heater that is communicated with mixing tank, well heater also are communicated with first inlet of hydrogenation reactor;
The dichloro-dihydro silicon memory that is communicated with first rectifying tower; And
The dichloro-dihydro silicon vaporizer that is communicated with the dichloro-dihydro silicon memory, dichloro-dihydro silicon vaporizer also are communicated with second inlet of hydrogenation reactor.
2. trichlorosilane production system according to claim 1 is characterized in that, hydrogenation reactor also has the 3rd inlet that is used to receive silica flour and catalyzer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200570717U CN201981013U (en) | 2011-03-07 | 2011-03-07 | Trichlorosilane production system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200570717U CN201981013U (en) | 2011-03-07 | 2011-03-07 | Trichlorosilane production system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201981013U true CN201981013U (en) | 2011-09-21 |
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ID=44608477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200570717U Expired - Lifetime CN201981013U (en) | 2011-03-07 | 2011-03-07 | Trichlorosilane production system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201981013U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102730691A (en) * | 2012-07-10 | 2012-10-17 | 内蒙古盾安光伏科技有限公司 | Energy utilization in polysilicon hydrogenation process |
| CN102849740A (en) * | 2012-08-23 | 2013-01-02 | 内蒙古盾安光伏科技有限公司 | Polycrystalline silicon production process |
| CN104039699A (en) * | 2011-11-14 | 2014-09-10 | 森特瑟姆光伏美国有限公司 | Processes and systems for non-equilibrium trichlorosilane production |
-
2011
- 2011-03-07 CN CN2011200570717U patent/CN201981013U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104039699A (en) * | 2011-11-14 | 2014-09-10 | 森特瑟姆光伏美国有限公司 | Processes and systems for non-equilibrium trichlorosilane production |
| CN102730691A (en) * | 2012-07-10 | 2012-10-17 | 内蒙古盾安光伏科技有限公司 | Energy utilization in polysilicon hydrogenation process |
| CN102849740A (en) * | 2012-08-23 | 2013-01-02 | 内蒙古盾安光伏科技有限公司 | Polycrystalline silicon production process |
| CN102849740B (en) * | 2012-08-23 | 2015-04-29 | 内蒙古盾安光伏科技有限公司 | Polycrystalline silicon production process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Qi Linxi Inventor after: Chen Lin Inventor after: Liu Zhanqing Inventor before: Chen Lin Inventor before: Qi Linxi Inventor before: Liu Zhanqing |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CHEN LIN QI LINXI LIU ZHANQING TO: QI LINXI CHEN LIN LIU ZHANQING |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110921 |