CN201946873U - Electrical absorption modulation laser biasing circuit - Google Patents
Electrical absorption modulation laser biasing circuit Download PDFInfo
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- CN201946873U CN201946873U CN201020655542XU CN201020655542U CN201946873U CN 201946873 U CN201946873 U CN 201946873U CN 201020655542X U CN201020655542X U CN 201020655542XU CN 201020655542 U CN201020655542 U CN 201020655542U CN 201946873 U CN201946873 U CN 201946873U
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- operational amplifier
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- filter capacitor
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Abstract
The utility model provides an electrical absorption modulation laser biasing circuit, which comprises a light emission assembly TOSA, a switch charging pump incapable of adjusting output voltages or a switching tube chip, an operational amplifier and a feedback resistor. The light emission assembly TOSA is formed by an electrical absorption modulator EA, a semiconductor laser LD and a monitoring diode PD in a common cathode ground connection mode. A positive electrode of the semiconductor laser LD is connected with a power supply Vcc through a first current-limiting resistor. A positive power pin of the switch charging pump incapable of adjusting output voltages or the switching tube chip is connected with the power supply Vcc, and a negative power pin of the switch charging pump or the switching tube chip is grounded. An output pin is connected with one end of a first electrical inductor, the other end of the first electrical inductor is connected with the positive electrode of the monitoring diode PD and one end of a third filter capacitor respectively, and the other end of the third filter capacitor is grounded. The positive power pin of the operational amplifier is connected with the power supply Vcc, and the negative power pin of the operational amplifier is connected with the positive electrode of the monitoring diode PD. The positive input pin of the operational amplifier is grounded, and the negative input pin of the operational amplifier is connected with an outer bias voltage device through a loop resistor. The feedback resistor is connected with a portion between the negative input pin and the output pin of the operational amplifier, and the output pin of the operational amplifier is connected with the positive electrode of the electrical absorption modulator EA.
Description
Technical field
The utility model relates to a kind of investigation mission outside the city or town laser bias circuit, relates in particular to a kind of Electroabsorption Modulated Laser biasing circuit.
Background technology
In order to realize the transmission of data on optical fiber, signal demand carries out electric light conversion and opto-electronic conversion by fiber optical transceiver, and the electric light conversion is finished by semiconductor laser.Semiconductor laser mainly divides two kinds according to the modulation system difference: direct modulated laser and externally modulated laser.In the transmission of middle long distance, what mainly adopt is externally modulated laser.Though this type of laser complex structure, the cost height can obtain bigger dispersion tolerance value, and transmission range is many more than 40 kilometers.Externally modulated laser comprises: Electroabsorption Modulated Laser and lithium niobate modulated laser, wherein Electroabsorption Modulated Laser adopts usually electroabsorption modulator and semiconductor laser is integrated on the chip substrate, definition is with electroabsorption modulator EA in 10G MSA-XMD-TOSA agreement, semiconductor laser LD, monitoring diode PD three common cathode connect and draw by a pin.Typical Electroabsorption Modulated Laser drive circuit adopts a positive supply Vcc (getting 3V or 5V) for semiconductor laser provides forward bias usually, and a negative supply is respectively electroabsorption modulator EA and monitoring diode PD provides reverse bias.But now a lot of system manufacturer all no longer provide negative supply, and this just requires module manufacturing firm to handle the inside modules power supply, produce negative supply to electroabsorption modulator EA and monitoring diode PD power supply by the fiber optical transceiver inside modules.As shown in Figure 1, semiconductor laser LD is connected to power Vcc through the 3rd resistance R 3, utilizes the charge pump of a unadjustable output voltage or switching tube chip IC 1 to provide negative voltage by a filter network that is made of second inductance L 2 and the 4th capacitor C 4 for monitoring diode PD; The charge pump of an adjustable output voltage or switching tube chip IC 2 are used to regulate its feedback voltage by the bias voltage signalization and first resistance R 1 of outside, chip IC 2 outputs are through first inductance L 1, the filter network that second resistance R 2 and second, third capacitor C 2, C3 form provides suitable bias voltage for electroabsorption modulator EA, two chip IC 1, IC2 positive supply pin connect power Vcc, the equal ground connection of negative supply pin.But the negative voltage ripple of this method output is bigger, is subjected to external disturbance easily, causes whole Electroabsorption Modulated Laser biasing circuit instability.
The utility model content
In order to overcome above shortcoming, the utility model provides a kind of Electroabsorption Modulated Laser biasing circuit of stable work in work.
The utility model adopts following technical scheme: a kind of Electroabsorption Modulated Laser biasing circuit, comprise: constitute a light emission component TOSA by an electroabsorption modulator EA, semiconductor laser LD and a monitoring diode PD three common cathode ground connection, described semiconductor laser LD anode connects power Vcc by first current-limiting resistance; The conversion charge pump of one unadjustable output voltage or switching tube chip, its positive supply pin connects power Vcc, negative supply pin ground connection, and output pin connects an end of first inductance, one end of described monitoring diode PD anode of another termination of this inductance and the 3rd filter capacitor, this electric capacity other end ground connection; Also comprise an operational amplifier, its positive supply pin connects power Vcc, and the negative supply pin connects monitoring diode PD anode, positive input pin ground connection, and negative input pin is connected with external bias setting by a grounded circuit resistance; One feedback resistance is connected between the negative input pin and output pin of described operational amplifier, and described operational amplifier output pin is connected with the anode of described electroabsorption modulator EA.
Also be connected second current-limiting resistance and ground connection second filter capacitor between the output pin of described operational amplifier and the described electroabsorption modulator EA anode.
The negative input pin of described operational amplifier also connects a ground connection first filter capacitor.
The value 0.1K Ω～10K Ω of described loop resistance, the value 1K Ω～100K Ω of feedback resistance, value 0 Ω of first current-limiting resistance～0.05K Ω, value 0 Ω of second current-limiting resistance～1K Ω, the first, the 3rd filter capacitor value 0.01uF～20uF, the value 0.1 uH～10uH of first inductance.
Owing to adopted operational amplifier to replace the charge pump or the switching tube chip of adjustable output voltage in the above-mentioned Electroabsorption Modulated Laser biasing circuit, cost is low, utilize negative supply to power to operational amplifier, add some outside filter circuits, Shu Chu negative voltage signal ripple is less like this, and whole laser is worth the circuit working stable performance partially.
Description of drawings
Fig. 1 represents prior art Electroabsorption Modulated Laser biasing circuit schematic diagram;
Fig. 2 represents the utility model Electroabsorption Modulated Laser biasing circuit schematic diagram.
Embodiment
Describe the utility model most preferred embodiment in detail below in conjunction with accompanying drawing.
A kind of Electroabsorption Modulated Laser biasing circuit as shown in Figure 2, comprise: constitute a light emission component TOSA (Transmitter Optical Sub-Assembly) by an electroabsorption modulator EA, semiconductor laser LD and a monitoring diode PD three common cathode ground connection, the anode of semiconductor laser LD connects power Vcc (value 3V or 5V) by the first current-limiting resistance R11.The conversion charge pump of one unadjustable output voltage or switching tube chip IC 1, its positive supply pin connects power Vcc, negative supply pin ground connection, output pin connects an end of first inductance L 11, the end of these inductance L 11 another termination monitoring diode PD anodes and the 3rd filter capacitor C13, this electric capacity other end ground connection.Also comprise an operational amplifier IC3, its positive supply pin meets Vcc, and the negative supply pin connects monitoring diode PD anode, positive input pin ground connection, and negative input pin is connected with the external bias signalization by a grounded circuit resistance R 14.One feedback resistance R13 is connected between the negative input pin and output pin of operational amplifier IC3, and operational amplifier IC3 output pin is connected with the anode of electroabsorption modulator EA.Also be connected the second current-limiting resistance R12 and the ground connection second filter capacitor C12 between the output pin of operational amplifier IC3 and the electroabsorption modulator EA anode.The negative input pin of operational amplifier IC3 also connects a ground connection first filter capacitor C11.
During operate as normal, power Vcc is converted to negative supply VSS through the conversion charge pump or the switching tube IC1 of unadjustable output voltage, provides negative supply through first inductance L 11 and the 3rd filter capacitor C13 for operational amplifier IC3 again.The positive input pin ground connection of operational amplifier IC3, negative input pin and external bias signalization by feedback resistance R13 and loop resistance R14 form feedback network and and positive input pin formation subtracter, the output pin magnitude of voltage Vout of operational amplifier IC3 and feedback resistance R13 and loop resistance R14 resistance size satisfy formula: Vout=-VsetR13/R14, wherein Vset is provided with voltage for outside bias voltage.Vout output voltage values scope theory is that (0～VSS), first resistance R 11 and the 3rd filter capacitor C13 form filter network.
Value 0.1K Ω～10K Ω of loop resistance R14, value 1K Ω～100K Ω of feedback resistance R13, value 0 Ω of the first current-limiting resistance R11～0.05K Ω, value 0 Ω of the second current-limiting resistance R12～1K Ω, the first, the 3rd filter capacitor C11, C13 value 0.01uF～20uF, the value 0.1 uH～10uH of first inductance L 11.
The negative supply VSS of monitoring diode PD and operational amplifier IC3 can directly adopt the conversion charge pump of a unadjustable output voltage or switching tube IC1 to realize, add some outside filter circuits, the bias voltage signal ripple of Shu Chu modulator is less like this, and this circuit working gets up also more stable.
Claims (4)
1. Electroabsorption Modulated Laser biasing circuit, comprise: constitute a light emission component TOSA by an electroabsorption modulator EA, semiconductor laser LD and a monitoring diode PD three common cathode ground connection, described semiconductor laser LD anode connects power Vcc by first current-limiting resistance (R11); The conversion charge pump of one unadjustable output voltage or switching tube chip (IC1), its positive supply pin connects power Vcc, negative supply pin ground connection, output pin connects an end of first inductance (L11), one end of described monitoring diode PD anode of another termination of this inductance (L11) and the 3rd filter capacitor (C13), this electric capacity other end ground connection; It is characterized in that also comprise an operational amplifier (IC3), its positive supply pin connects power Vcc, the negative supply pin connects monitoring diode PD anode, positive input pin ground connection, and negative input pin is connected with external bias setting by a grounded circuit resistance (R14); One feedback resistance (R13) is connected between the negative input pin and output pin of described operational amplifier (IC3), and described operational amplifier (IC3) output pin is connected with the anode of described electroabsorption modulator EA.
2. Electroabsorption Modulated Laser biasing circuit according to claim 1, it is characterized in that, also be connected second current-limiting resistance (R12) and ground connection second filter capacitor (C12) between the output pin of described operational amplifier (IC3) and the described electroabsorption modulator EA anode.
3. Electroabsorption Modulated Laser biasing circuit according to claim 1 and 2 is characterized in that, the negative input pin of described operational amplifier (IC3) also connects a ground connection first filter capacitor (C11).
4. Electroabsorption Modulated Laser biasing circuit according to claim 3, it is characterized in that, the value 0.1K Ω～10K Ω of described loop resistance (R14), the value 1K Ω～100K Ω of feedback resistance (R13), value 0 Ω of first current-limiting resistance (R11)～0.05K Ω, value 0 Ω of second current-limiting resistance (R12)～1K Ω, the first, the 3rd filter capacitor filter capacitor (C11, C13) value 0.01uF～20uF, the value 0.1 uH～10uH of first inductance (L11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020655542XU CN201946873U (en) | 2010-12-13 | 2010-12-13 | Electrical absorption modulation laser biasing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020655542XU CN201946873U (en) | 2010-12-13 | 2010-12-13 | Electrical absorption modulation laser biasing circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201946873U true CN201946873U (en) | 2011-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201020655542XU Expired - Lifetime CN201946873U (en) | 2010-12-13 | 2010-12-13 | Electrical absorption modulation laser biasing circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102571003A (en) * | 2010-12-13 | 2012-07-11 | 深圳新飞通光电子技术有限公司 | Bias circuit of electroabsorption modulated laser |
| CN103050887A (en) * | 2012-12-26 | 2013-04-17 | 华为技术有限公司 | Electric absorption mode modulated laser system |
| EP3550681A4 (en) * | 2016-12-26 | 2019-10-30 | Huawei Technologies Co., Ltd. | Optical signal modulation circuit and device |
-
2010
- 2010-12-13 CN CN201020655542XU patent/CN201946873U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102571003A (en) * | 2010-12-13 | 2012-07-11 | 深圳新飞通光电子技术有限公司 | Bias circuit of electroabsorption modulated laser |
| CN102571003B (en) * | 2010-12-13 | 2014-09-24 | 深圳新飞通光电子技术有限公司 | Bias circuit of electroabsorption modulated laser |
| CN103050887A (en) * | 2012-12-26 | 2013-04-17 | 华为技术有限公司 | Electric absorption mode modulated laser system |
| EP3550681A4 (en) * | 2016-12-26 | 2019-10-30 | Huawei Technologies Co., Ltd. | Optical signal modulation circuit and device |
| US10897311B2 (en) | 2016-12-26 | 2021-01-19 | Huawei Technologies Co., Ltd. | Optical signal modulation circuit and apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20110824 Effective date of abandoning: 20140924 |
|
| RGAV | Abandon patent right to avoid regrant |