CN201927597U

CN201927597U - Structure for realizing functional insulation of transistor fixed on radiator

Info

Publication number: CN201927597U
Application number: CN2010206259178U
Authority: CN
Inventors: 李稳; 高宗利
Original assignee: SHENZHEN KINDFAIRY SEMICONDUCTOR CO Ltd
Current assignee: SHENZHEN KINDFAIRY SEMICONDUCTOR CO Ltd
Priority date: 2010-11-24
Filing date: 2010-11-24
Publication date: 2011-08-10
Anticipated expiration: 2020-11-24

Abstract

The utility model provides a structure for realizing the functional insulation of a transistor fixed on a radiator. After a threaded connection mode with a plurality of screw bolts and a plurality of insulating particles is adopted, the structure is remained to be compact and can bear higher voltage. A threaded orifice of the transistor fixed on the radiator is additionally provided with a counter bore, so that the creepage distance among a heating panel of the transistor, the screw bolt and the radiator meets the requirement of the functional insulation with the insulating particles with a certain length and a plurality of heat-conducting silica gel pieces.

Description

A kind of structure that realizes being fixed on the transistor function insulation on the radiator

Technical field

The utility model relates to the electronic product field, is specifically related to a kind of structure that realizes being fixed on the transistor function insulation on the radiator.

Background technology

At present, transistor is fixed to and mainly contains dual mode on the radiator, and a kind of is to fix with press strip, and this mode is born withstand voltage height, but requisite space is bigger; A kind of is to add insulation grain thread connection with screw to fix, this mode is simple and convenient, requisite space is little, but because transistor is to the distance very little (theoretical size is 0.25mm) of screw, radiator, thus bear withstand voltage lower, and in primary return, transistorized operating voltage reaches 500V usually, even 800V, this moment, the insulation that the transistor AND gate radiator is asked was easy to lose efficacy when adopting this fixed form.

The utility model content

The purpose of this utility model is to provide a kind of and adopts mode that screw adds insulation grain thread connection that transistor is fixed to structure on the radiator, and when keeping compact conformation, can bear higher withstand voltage.

The technical scheme that its technical problem that solves the utility model adopts is: screw, insulation grain, transistor, insulation silica gel sheet, radiator order thread connection, counterbore of threaded bores processing at radiator fixed crystal pipe, cooperate the insulation grain of certain-length, make the creepage distance of transistor heating panel and screw, radiator meet the functional insulation requirement.

Advantage of the present utility model is not use the functional insulation of realizing the high voltage loop under the situation of press strip.

Description of drawings

Fig. 1 is a connection diagram of the present utility model;

Fig. 2 is counter bore structure figure of the present utility model;

Fig. 3 is the structure chart of insulation grain.

1 is heat conduction silica gel sheet among the figure, the 2nd, and transistor housing, the 3rd, transistor heating panel, the 4th, screw assemblies, the 5th, insulation grain, the 6th, radiator.

Embodiment

The utility model is described in further details with best case study on implementation below in conjunction with accompanying drawing;

After transistor AND gate radiator, insulation grain, heat conduction silica gel sheet are pressed Fig. 1 connection, as Fig. 2, be processed with screwed hole on the radiator for the fixed crystal pipe, at its aperture processing counterbore, the present embodiment counterbore is of a size of diameter 5.5mm * 0.8mm, and the transistor heating panel is 1mm through heat conduction silica gel sheet to the creepage distance of radiator.Generally require counter bore hole diameters than the big 2mm of transistor heating panel fixing hole diameter.

The specification of syndeton length than the big 1mm of transistor heating panel thickness selected in the insulation grain-by-grain seed selection, to guarantee that screw (radiator) arrives the creepage distance of transistor heating panel greater than 1mm through the insulation grain, the implementation case transistor heating panel thickness is 1.4mm, so selecting syndeton length is the insulation grain (showing as Fig. 3) of 2.5mm, screw (radiator) is 1.1mm through an insulation creepage distance to the transistor heating panel.

Because surfaces such as the transistor heating panel outside reach more than the 1mm to the creepage distance of radiator, screw easily, so behind the employing such scheme, can guarantee creepage distance between transistor heating panel and radiator all greater than 1mm, realize the insulation of transistor reliable functioning.

Claims

1. a realization is fixed on the structure that the transistor function on the radiator insulate, screw, insulation grain, transistor, insulation silica gel sheet, radiator order thread connection, it is characterized in that:, cooperate the insulation grain of certain-length at counterbore of threaded bores processing of radiator fixed crystal pipe.

2. a kind of structure that realizes being fixed on the transistor function insulation on the radiator according to claim 1, it is characterized in that: the radiator counter bore hole diameters is bigger than transistor heating panel fixing hole diameter.

3. a kind of structure that realizes being fixed on the transistor function insulation on the radiator according to claim 1, it is characterized in that: insulation grain syndeton length is bigger than transistor heating panel thickness.