CN201886140U - Magnetic induction density measuring device based on colossal magnetoresistance effect - Google Patents

Magnetic induction density measuring device based on colossal magnetoresistance effect Download PDF

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Publication number
CN201886140U
CN201886140U CN2010206631194U CN201020663119U CN201886140U CN 201886140 U CN201886140 U CN 201886140U CN 2010206631194 U CN2010206631194 U CN 2010206631194U CN 201020663119 U CN201020663119 U CN 201020663119U CN 201886140 U CN201886140 U CN 201886140U
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huge
magnetic field
loop
magnetoresistance effect
resistance
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Expired - Lifetime
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CN2010206631194U
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王昕�
王静怡
李宇胜
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Fujian Shuikou Power Generation Group Co Ltd
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Fujian Shuikou Power Generation Group Co Ltd
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Abstract

The utility model relates to a magnetic induction density measuring device, comprising an electromagnetic screen device, a first loop and a second loop. The first loop comprises a colossal magnetoresistance component, a Helmholtz coil and a first power supply device, and the second loop comprises a huygens bridge and a second power supply device. In the utility model, the remarkable action of the colossal magnetoresistance effect is utilized, and the Helmholtz coil is adopted for providing a reverse magnetic field and is used for balancing a magnetic field to be measured. When the huygens bridge is balanced, the magnetic field to be measured and the magnetic field of the Helmholtz coil are equal in value but are opposite in the directions. The resistance of the colossal magnetoresistance component is not needed to be calculated, and the accuracy and precision of the calculation are improved. The electromagnetic screen device is adopted to effectively shield the environmental magnetic field and provide a measuring environment of zero magnetic field intensity, thereby interference-free basic parameters are provided for the subsequent measurement, and the degree of accuracy of the measurement is improved.

Description

Magnetic flux density measurement device based on huge magnetoresistance effect
Technical field
The utility model relates to a kind of magnetic flux density measurement device, particularly a kind of magnetic flux density measurement device based on huge magnetoresistance effect.
Background technology
Magnetic flux density measurement is used very extensive, and prior art mainly adopts Hall element or inductive coil magnetometer to measure, and particularly the use of Hall element is very extensive, and it is simple in structure, easily miniaturization.But in use, the noise level and the static shift of Hall element are bigger, and therefore for weak magnetic survey sensitivity deficiency, precision is not enough.And the inductive coil magnetometer is a kind of device according to Faraday's electromagnetic induction law work, can not be used to measure static magnetic field, and is mainly used in proximity detection.
Utilize the magnetoresistance effect of material also can carry out the measurement of magnetic induction density.
Described magnetoresistance effect (MR) is meant the material phenomenon that resistance changes under the action of a magnetic field, full name magnetoresistance varying effect.Magnetic metal and alloy at room temperature MR are generally less than 8%.The MR of magnetic and nonmagnetic metal multilayer film generally about 10, is called giant magnetoresistance effect (GMR), and in recent years, giant magnetoresistance effect is used widely at aspects such as computer disk, numerically-controlled machines, but blemish in an otherwise perfect thing is that the MR of GMR material is big not enough.
The utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art part and provides a kind of measurement effect good, good reliability, the magnetic flux density measurement device based on huge magnetoresistance effect that precision is high.
Measurement mechanism described in the utility model is realized by following approach:
Based on the magnetic flux density measurement device of huge magnetoresistance effect, its structural feature is, includes electromagnetic screen, first loop and second loop.Include huge magneto-resistance device, Helmholtz coils and first supply unit in first loop, huge magneto-resistance device is positioned over Helmholtz coils axis mid point, and the Helmholtz coils that huge magneto-resistance device is installed is connected with supply unit, forms first loop; Include Huygens's electric bridge and second source device in second loop, Huygens's electric bridge is connected with the second source device, forms second loop; Simultaneously, huge magneto-resistance device is connected to the testing resistance position of Huygens's electric bridge.
The above-mentioned employed measuring method of magnetic flux density measurement device based on huge magnetoresistance effect comprises the steps:
1, with first loop open circuit, and second loop is closed circuit, and entire measuring device is put into electromagnetic screen, and this moment, huge magneto-resistance device was in the environment in zero magnetic field,
2, the resistance box of regulating Huygens's electric bridge is up to bridge balance,
3, keep the resistance box resistance of Huygens's electric bridge constant, remove electromagnetic screen, measurement mechanism is in treats in the measuring magnetic field,
4, owing to huge magnetoresistance effect, the resistance of huge magneto-resistance device changes (significantly reducing), and Huygens's bridge balance is destroyed,
5, connect first loop, Helmholtz coils produces magnetic field, and this moment, huge magneto-resistance device was under the double action for the treatment of measuring magnetic field and Helmholtz coils magnetic field, and two magnetic field sums are environment total magnetic fields,
6, regulate first supply unit, change the direction of current and the size of Helmholtz coils, up to Huygens's electric bridge balance once more,
Resistance when 7, the resistance of huge magneto-resistance device equals zero magnetic field at this moment, the environment total magnetic field that huge magneto-resistance device position is described is zero, treats measuring magnetic field and Helmholtz coils magnetic field balance, both equal and opposite in directions, direction is opposite, cancels out each other;
8, the number of turn, size of current and the coil radius according to Helmholtz coils just can calculate Helmholtz coils magnetic field, thereby obtains treating measuring magnetic field magnetic induction density.
Described huge magneto-resistance device is made of huge magnetic resistance material, this material has extremely huge magnetoresistance effect, under certain temperature and magnetic field condition, it makes magnetic field is ferromagnetism from paramagnetism or antiferromagnetic transition, and the simultaneous oxidation thing that transformation takes place in magnetic field changes metallicity into from the semiconductor conductive characteristic, make resistivity generation several magnitude great variety, its magnetoresistance effect can be up to 10 6, be referred to as huge magnetoresistance effect (Colossal Magnetoresistance is called for short CMR), be 100,000 times of giant magnetoresistance effect, therefore utilize it to measure magnetic field, particularly measure low-intensity magnetic field precision height.
In addition, the utility model adopts Helmholtz coils that the reversed magnetic field is provided, and is used for balance and treats measuring magnetic field; Use Huygens's electric bridge to come whether the indicative for environments total magnetic field is zero; When the environment total magnetic field is zero, treat measuring magnetic field and Helmholtz coils magnetic field balance, both equal and opposite in directions, direction is opposite; Do not need to calculate the resistance of huge magneto-resistance device, simplified computation process, improved accuracy in computation and precision; Because Huygens's electric bridge has high sensitivity, has improved the accuracy and the precision of magnetic-field measurement.Adopt electromagnetic screen, effectively shield external magnetic field, the measurement environment in zero magnetic field is provided, guarantee the accuracy of follow-up measurement with this.
The utility model can further be specially:
Huge magneto-resistance device comprises a kind of rare earth manganese oxide film of ABO3 type perovskite structure, and this film uses the pulsed laser deposition method at Al 2O 3Be prepared from the substrate.There is huge magnetoresistance effect in this film, is used to make huge magneto-resistance device thus.
The used rare earth manganese oxide film of huge magneto-resistance device is La xR 1-xMnO 3Doping rare earth manganese oxides, R are divalent metal elements such as Ca.Using the doping rare earth manganese oxides purpose is to improve CMR effect warm area near room temperature, and testing environment is optimized greatly, also conveniently is used for making weak magnetic checkout equipment.
Helmholtz coils is a pair of identical circular coil, and parallel to each other and coaxial, coil-span equals coil radius.
Like this, when this passes to equidirectional electric current to coil, the total magnetic field of two current-carrying coils near the axis mid point in a big way in be uniformly, can stepless action on huge magneto-resistance device, and with treat the measuring magnetic field balance.
First supply unit and second source device are a kind of constant voltage dc source, and the voltage-regulation scope is 10-200V.
The voltage-regulation scope should be corresponding with the parameter of Helmholtz coils, can adjust the size of current of Helmholtz coils, and direction is by Polarity Control.
Electromagnetic screen is a wire gauze housing, is used to shield external electromagnetic field, and the measurement environment of zero magnetic field intensity is provided.
In sum, the utility model utilizes the huge magnetoresistance effect of huge magneto-resistance device, and a kind of high-precision magnetic flux density measurement device and measuring method thereof based on huge magnetoresistance effect is provided.Adopt Helmholtz coils that the reversed magnetic field is provided, be used for balance and treat measuring magnetic field; Adopt whether Huygens's electric bridge indicative for environments total magnetic field is zero; When the environment total magnetic field is zero, treat measuring magnetic field and Helmholtz coils magnetic field balance, both equal and opposite in directions, direction is opposite; Because Huygens's electric bridge has high sensitivity, accuracy and the precision measured have therefore been improved.Adopt electromagnetic screen, effectively shield external magnetic field, the measurement environment of zero magnetic field intensity is provided, guarantee the accuracy of follow-up measurement with this.
Description of drawings
Figure 1 shows that the circuit principle structure synoptic diagram in magnetic flux density measurement device first loop based on huge magnetoresistance effect described in the utility model.
Figure 2 shows that the circuit principle structure synoptic diagram in magnetic flux density measurement device second loop based on huge magnetoresistance effect described in the utility model.
Figure 3 shows that the circuit principle structure synoptic diagram of the magnetic flux density measurement device based on huge magnetoresistance effect described in the utility model, the schematic diagram of measuring when electromagnetic screen is isolated external magnetic field.
Figure 4 shows that the circuit principle structure synoptic diagram of the magnetic flux density measurement device based on huge magnetoresistance effect described in the utility model, remove the schematic diagram of measuring behind the electromagnetic screen.
Below in conjunction with embodiment the utility model is described further.
Specific embodiment
Most preferred embodiment:
Based on the magnetic flux density measurement device of huge magnetoresistance effect, include electromagnetic screen, first loop and second loop.With reference to accompanying drawing 1, include huge magneto-resistance device LaCaMnO, Helmholtz coils and the first supply unit U1 in first loop, huge magneto-resistance device LaCaMnO is positioned over Helmholtz coils axis mid point, the Helmholtz coils that huge magneto-resistance device is installed is connected with U1 via K1, forms first loop; Wherein, huge magneto-resistance device comprises La 0.7R 0.3MnO 3Doping rare earth manganese oxides film, this film use the pulsed laser deposition method at Al 2O 3Be prepared from the substrate; Helmholtz coils is a pair of identical circular coil, and is parallel to each other and coaxial, and coil-span equals coil radius r.
With reference to including Huygens's electric bridge and second source device in accompanying drawing 2, the second loops, Huygens's electric bridge is connected with second source device U2 via K2, forms second loop.
The first supply unit U1 and second source device U2 are a kind of constant voltage dc source, and the voltage-regulation scope is 10-200V.Electromagnetic screen is a wire gauze housing, is used to shield external electromagnetic field, and the measurement environment of zero magnetic field intensity is provided.
With reference to accompanying drawing 3 and accompanying drawing 4, the above-mentioned employed measuring method of magnetic flux density measurement device based on huge magnetoresistance effect comprises the steps:
1, sees accompanying drawing 3, opened a way in first loop, open K1, and second loop is closed circuit, closed K2, entire measuring device is placed in the electromagnetic screen, because do not have electric current in first loop, Helmholtz coils does not produce magnetic field, the tinsel electromagnetic screen has shielded external magnetic field again, so this moment, huge magneto-resistance device LaCaMnO was in the environment in zero magnetic field
2, regulate the resistance of resistance box Rt in Huygens's electric bridge, G makes zero up to reometer, this moment Huygens's bridge balance,
3, see accompanying drawing 4, keep the resistance box resistance Rt of Huygens's electric bridge constant, remove electromagnetic screen, measurement mechanism is in treats in the measuring magnetic field,
4, under the action of a magnetic field to be measured, huge magneto-resistance device LaCaMnO is because of magnetoresistance effect, and resistance changes (significantly reducing), and Huygens's bridge balance is destroyed, and reometer G indication no longer is zero;
5, closed K1 connects first loop, and Helmholtz coils produces magnetic field, and this moment, huge magneto-resistance device LaCaMnO was under the double action for the treatment of measuring magnetic field and Helmholtz coils magnetic field, and two magnetic field sums are environment total magnetic fields,
6, regulate the first supply unit U1, change the direction of current and the size of Helmholtz coils, G makes zero up to reometer, and Huygens's electric bridge is balance once more,
Resistance when 7, the resistance of huge magneto-resistance device equals zero magnetic field at this moment illustrates that the environment total magnetic field is zero, magnetic field B 1 therefore to be measured and Helmholtz coils magnetic field B 2 balances, and equal and opposite in direction, direction is opposite, B1=-B2;
8, the number of turn, size of current and the coil radius according to Helmholtz coils just can calculate Helmholtz coils magnetic field, thereby obtains treating measuring magnetic field magnetic induction density.
This method and device can be used for dissimilar electrical equipments such as power equipment.
This method and device not only can be measured magnetic induction density, also can easily measure electric field intensity through repacking.
It is same as the prior art that the utility model is not stated part.

Claims (6)

1. based on the magnetic flux density measurement device of huge magnetoresistance effect, it is characterized in that, include electromagnetic screen, first loop and second loop, include huge magneto-resistance device, Helmholtz coils and first supply unit in first loop, huge magneto-resistance device is positioned over Helmholtz coils axis mid point, the Helmholtz coils that huge magneto-resistance device is installed is connected with supply unit, forms first loop; Include Huygens's electric bridge and second source device in second loop, Huygens's electric bridge is connected with the second source device, forms second loop; Simultaneously, huge magneto-resistance device is connected to the testing resistance position of Huygens's electric bridge.
2. the magnetic flux density measurement device based on huge magnetoresistance effect according to claim 1 is characterized in that huge magneto-resistance device comprises a kind of ABO 3The rare earth manganese oxide film of type perovskite structure, this film use the pulsed laser deposition method at Al 2O 3Be prepared from the substrate.
3. the magnetic flux density measurement device based on huge magnetoresistance effect according to claim 2 is characterized in that the ABO that huge magneto-resistance device is used 3The type rare earth manganese oxide uses the Ca element that it is carried out A bit element and substitutes, and forms La xR 1-xMnO 3Doping rare earth manganese oxides.
4. the magnetic flux density measurement device based on huge magnetoresistance effect according to claim 1 is characterized in that Helmholtz coils is a pair of identical circular coil, and parallel to each other and coaxial, coil-span equals coil radius.
5. the magnetic flux density measurement device based on huge magnetoresistance effect according to claim 1 is characterized in that first supply unit and second source device are a kind of constant voltage dc source, and the voltage-regulation scope is 10-200V.
6. the magnetic flux density measurement device based on huge magnetoresistance effect according to claim 1 is characterized in that, electromagnetic screen is a wire gauze housing.
CN2010206631194U 2010-12-16 2010-12-16 Magnetic induction density measuring device based on colossal magnetoresistance effect Expired - Lifetime CN201886140U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102103193A (en) * 2010-12-16 2011-06-22 福建水口发电集团有限公司 Device and method for measuring magnetic induction intensity based on colossal magnetoresistance effect

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102103193A (en) * 2010-12-16 2011-06-22 福建水口发电集团有限公司 Device and method for measuring magnetic induction intensity based on colossal magnetoresistance effect
WO2012079507A1 (en) * 2010-12-16 2012-06-21 福建省电力有限公司 Device and method for measuring magnetic induction intensity based on colossal magnetoresistive effect

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