CN201877436U - 肖特基二极管 - Google Patents
肖特基二极管 Download PDFInfo
- Publication number
- CN201877436U CN201877436U CN 201020635216 CN201020635216U CN201877436U CN 201877436 U CN201877436 U CN 201877436U CN 201020635216 CN201020635216 CN 201020635216 CN 201020635216 U CN201020635216 U CN 201020635216U CN 201877436 U CN201877436 U CN 201877436U
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- Prior art keywords
- schottky diode
- copper strips
- copper
- diode
- efficiency
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- Electrodes Of Semiconductors (AREA)
Abstract
本实用新型涉及一种肖特基二极管，包括本体和铜带，所述本体的左部和右部各与一铜带的一端焊接，本体与铜带的焊接点为PN结，铜带的另一端均焊接有引脚。本实用新型的有益效果为：该肖特基二极管是单一P/N结与一条铜带，单次点焊，生产效率高，良品率高；铜带热传导极佳，使二极体PN结散热极快，产品可靠性极大提高；铜带导电性极好，动、静态阻值小，效率高，发热量小应用中可在幅度提高效率及可靠性。
Description
技术领域
本实用新型涉及一种肖特基二极管。
背景技术
肖特基二极管是近年来问世的低功耗、大电流、超高速半导体器件，其反向恢复时间极短（可以小到几纳秒），正向导通压降仅0.4V左右，而整流电流非常大。这些优良特性是二极管所无法比拟的，因此得到广泛采用。特别是在RFID应用中，肖特基二极管是关健无源器件之一，CMOS工艺中，通过在以所选浓度掺杂有掺杂质的区域上淀积钦或铂之类的金属而半导体晶片的有源区表面形成肖特基二极管。现在的肖特基二极管多是在同一PN结点焊多条铝丝，生产效率低下，生产良品率低下；铝丝热传导不佳，二极体PN结散热慢；铝丝导电性不佳，直流阻值大造成产品的静态、动态阻值大、发热严重，可靠性差。
实用新型内容
本实用新型的目的是提供一种肖特基二极管，以克服现有的肖特基二极管的金属丝为多条铝丝，其生产效率低下，生产良品率少，二极体PN结散热慢等缺陷。
本实用新型的目的是通过以下技术方案来实现：
一种肖特基二极管，包括本体和铜带，所述本体的左部和右部各与一铜带的一端焊接，本体与铜带的焊接点为PN结，铜带的另一端均焊接有引脚。
本实用新型的有益效果为：该肖特基二极管是单一P/N结与一条铜带单次点焊，生产效率高，良品率高；铜带热传导极佳，使二极体PN结散热极快，产品可靠性极大提高；铜带导电性极好，动、静态阻值小，效率高，发热量小应用中可在幅度提高效率及可靠性。
附图说明
下面根据附图对本实用新型作进一步详细说明。
图1是本实用新型实施例所述的肖特基二极管的结构示意图。
图中：
1、本体；2、铜带；3、PN结；4、引脚。
具体实施方式
如图1所示，本实用新型实施例所述的一种肖特基二极管，包括本体1和铜带2，所述本体1的左部和右部各与一铜带2的一端焊接，本体1与铜带2的焊接点为PN结3，铜带2的另一端均焊接有引脚4。
使用时，将两只引脚4点焊在电源中的电路板上，从而将交流整流为直流。
Claims (1)
1.一种肖特基二极管，包括本体（1）和铜带（2），其特征在于：所述本体（1）的左部和右部各与一铜带（2）的一端焊接，本体（1）与铜带（2）的焊接点为PN结（3），铜带（2）的另一端均焊接有引脚（4）。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020635216 CN201877436U (zh) | 2010-11-30 | 2010-11-30 | 肖特基二极管 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020635216 CN201877436U (zh) | 2010-11-30 | 2010-11-30 | 肖特基二极管 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201877436U true CN201877436U (zh) | 2011-06-22 |
Family
ID=44165346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020635216 Expired - Fee Related CN201877436U (zh) | 2010-11-30 | 2010-11-30 | 肖特基二极管 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201877436U (zh) |
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2010
- 2010-11-30 CN CN 201020635216 patent/CN201877436U/zh not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110622 Termination date: 20111130 |