CN201868542U - Polarization insensitive double-frequency active frequency selective surface structure - Google Patents
Polarization insensitive double-frequency active frequency selective surface structure Download PDFInfo
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- CN201868542U CN201868542U CN2010202383320U CN201020238332U CN201868542U CN 201868542 U CN201868542 U CN 201868542U CN 2010202383320 U CN2010202383320 U CN 2010202383320U CN 201020238332 U CN201020238332 U CN 201020238332U CN 201868542 U CN201868542 U CN 201868542U
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Abstract
The utility model relates to a polarization insensitive double-frequency active frequency selective surface structure. The front surface of a medium plate (5) is provided with a front surface metal layer (1), an intermediate metal layer is arranged in the middle of the front surface metal layer (1), a square frame is arranged at the periphery of the front surface metal layer (1), an FSS gap (2) is arranged between the square frame and the intermediate metal layer which are connected with each other through a loading capacitor (4), the back of the medium plate (5) is provided with a back feed network (6) which is connected with the intermediate metal layer in the front surface metal layer (1) through a metal through hole (3), the back feed network (6) is evenly distributed at symmetrical positions on the four sides of the back through four groups of spiral metal feed lines to form central symmetrical arrangement, and all centers are connected to the front surface metal layer through metal through holes. The polarization insensitive double-frequency active frequency selective surface structure realizes adjustable double-frequency resonance at C band and X band, and has the characteristic of being insensitive to polarization.
Description
Technical field
The present invention relates to a kind of active frequency-selective surfaces structure, this structure insensitive and wide incidence angle characteristic that can realize polarizing with dual frequency characteristics.
Background technology
Frequency-selective surfaces (FSS) is as an important technology in the stealth technology, after being suggested, its notion just is subjected to the attention of height always, unique electrical property not only is used widely it in satellite communication field, and also playing the part of important role aspect stealthy at aircraft, be widely used in fields such as electromagnetism is stealthy, electromagnetic compatibility, military communication, electronic countermeasures.
Passive frequencies selects study of surfaces many, uses also very extensively, and its exclusive advantage is arranged, as the bandwidth ratio broad etc.Use passive frequencies to select electromagnetic propertys such as its bandwidth of operation of equipment of surface formation, resonance frequency all can't change but then, thereby variation that can't fast adaptation external electromagnetic environment in changeable electromagnetic environment and bring into play its maximum effect, the proposition of active frequency-selective surfaces provides new solution for overcoming this defective.
Summary of the invention
Technical problem: the purpose of this invention is to provide the active frequency-selective surfaces of a kind of dual frequency characteristics, overall structure realizes the double-frequency resonance characteristic by integrated design of Simulation behind the loading feeding network, and has the insensitive characteristics of polarization.
Technical scheme: the active frequency-selective surfaces of dual frequency characteristics of the present invention comprises the front metal layer, FSS slit, metal throuth hole, loading capacitance, dielectric-slab, back feeding network; Be provided with the front metal layer in the front of dielectric-slab, this front metal layer comprises that the middle part is a square intermediate metal layer, the periphery is a square metal level housing, between metal level housing that this is square and the square intermediate metal layer is the FSS slit, is connected by loading capacitance between square metal level housing and the square intermediate metal layer; Be provided with the back feeding network at the back side of dielectric-slab, the back feeding network is connected by metal throuth hole with square intermediate metal layer in the front metal layer.
Described back feeding network is evenly distributed on back four limit symmetric positions by four groups of spiral metal feeder lines, becomes the center symmetry arrangement, and each center is connected to square intermediate metal layer by metal throuth hole.
In order to realize changing insensitive active FSS structure for polarization mode, when designing, this paper mainly considers: first from the following aspects, make FSS resonant element symmetrical geometry, second, when carrying out the reactance loading, loading reactance equally must be about the center symmetry, in order to satisfy the insensitivity of structure to polarization mode, the present invention adopts four limits symmetry load mode, the 3rd, in actual applications, the change that loads the reactance size needs the outside that bias voltage or electric current are provided, this just need add biasing networks in original active FSS structure, and consider the biasing networks design, and biasing networks is owing to is made up of the metal tape grid, thereby under incident wave shines, can present inductive effect, this point must take in actual design, need carry out whole simulation analysis to structure.
Beneficial effect: characteristics of the present invention are: overall structure has realized the double-frequency resonance characteristic by integrated design of Simulation after loading feeding network, and has the insensitive characteristics of polarization.
Description of drawings
Below in conjunction with accompanying drawing, the present invention is made detailed description:
Fig. 1 is a FSS Facad structure schematic diagram.
Fig. 2 is a FSS structure schematic diagram.
Fig. 3 is the schematic diagram that influences that active FSS reflection characteristic is subjected to capacitance variations.
Fig. 4 is the schematic diagram that influences that active FSS transmission characteristic is subjected to capacitance variations.
Fig. 5 is the influence curve that reflection characteristic is subjected to polarization mode.
Fig. 6 is the influence curve that transmission characteristic is subjected to polarization mode.
Embodiment
The active frequency-selective surfaces of dual frequency characteristics of the present invention, comprise dielectric-slab and the metal level frequency-selective surfaces structure that is positioned on the dielectric-slab, and the feeding network at the dielectric-slab back side, the present invention has designed the insensitive active FSS structure of a kind of polarization, and having designed the feeding network structure for it, in this feed structure, four groups of spiral metal feeder lines are evenly distributed on back four limit symmetric positions, one-tenth center symmetry arrangement, each center is connected to the front metal surface by metal throuth hole.The FSS structure side of the being ring slot type FSS resonant element that the present invention adopts, reactance loads adopts four limits symmetry load mode, because the reactance parallel with direction of an electric field loads and can not exert an influence to resonance characteristic, thus the effect that loads of four limits with only consistent with electric field vertical direction loading reactance effect.This symmetrical load mode has played the effect that solves polarization problem, when polarization mode becomes horizontal polarization by perpendicular polarization, loads with reactance on the electric field vertical direction and to remain unchanged.The realization of active frequency-selective surfaces realizes by loading varactor among the present invention, in the practical application, the change that loads the reactance size needs the outside that bias voltage or electric current are provided, this just need add biasing networks in original active FSS structure, and consideration biasing networks design, structure is carried out whole simulation analysis, the present invention is directed to feeding network integrated design problem, proposed to load at the frequency-selective surfaces back new method of spiral feeding network, this overall structure can realize dual frequency characteristics at X-band.
The active frequency-selective surfaces of dual frequency characteristics of the present invention comprises front metal layer 1, FSS slit 2, metal throuth hole 3, loading capacitance 4, dielectric-slab 5, back feeding network 6; Be provided with front metal layer 1 in the front of dielectric-slab 5, the middle part of this front metal layer 1 is a square intermediate metal layer, the periphery is a square housing, is FSS slit 2 between housing that this is square and the intermediate metal layer, is connected by loading capacitance 4 between square housing and the intermediate metal layer; Be provided with back feeding network 6 at the back side of dielectric-slab 5, the intermediate metal layer in back feeding network 6 and the front metal layer 1 is connect by metal throuth hole 3.Described back feeding network 6 is evenly distributed on back four limit symmetric positions by four groups of spiral metal feeder lines, becomes the center symmetry arrangement, and each center is connected to the front metal layer by metal throuth hole.
Analyze from the angle of equivalent electric circuit theory, side's ring slot type FSS structure self can equivalence be a LC resonant circuit in parallel, the loading of PIN pipe or varactor is equivalent to parallel reactance in original LC resonant circuit, by changing bias voltage or electric current, can make the active device reactance of loading change, resonance characteristic is changed.Back spiral feeding network is made up of the metal gate band, can present inductive effect under the irradiation of incident wave, and can produce a coupling capacitance between metal level and back side feeder line, with itself and upper strata metal slit textural association, thereby produces the two-band resonance characteristic.
The side that loads four prescription spiral feeder lines referring to Fig. 2 encircles the influence curve that slot type dual frequency active FSS resonance characteristic is subjected to capacitance variations.Variation by loading capacitance realizes that two resonance frequencys are simultaneously adjustable.
Figure 3 shows that the change curve that this active FSS resonance characteristic is influenced by polarization mode.For difference polarization wave mode, when polarized wave became perpendicular polarization by horizontal polarization, significant change did not take place in the resonance characteristic of double frequency structure, was keeping consistency aspect resonance point and the bandwidth.
In sum, the present invention can realize that the dual frequency active of frequency-selective surfaces is adjustable, and has kept the insensitivity to polarization.
Claims (2)
1. the insensitive dual frequency active frequency-selective surfaces structure of polarization is characterized in that this option table face comprises front metal layer (1), FSS slit (2), metal throuth hole (3), loading capacitance (4), dielectric-slab (5), back feeding network (6); Be provided with front metal layer (1) in the front of dielectric-slab (5), this front metal layer (1) comprises that the middle part is a square intermediate metal layer (11), the periphery is a square metal level housing (12), between metal level housing (12) that this is square and the square intermediate metal layer (11) is FSS slit (2), is connected by loading capacitance (4) between square metal level housing (12) and the square intermediate metal layer (11); Be provided with back feeding network (6) at the back side of dielectric-slab (5), back feeding network (6) is connected by metal throuth hole (3) with square intermediate metal layer (11) in the front metal layer (1).
2. the insensitive dual frequency active frequency-selective surfaces of polarization according to claim 1 structure, it is characterized in that described back feeding network (6) is evenly distributed on back four limit symmetric positions by four groups of spiral metal feeder lines, one-tenth center symmetry arrangement, each center is connected to square intermediate metal layer (11) by metal throuth hole (3).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010202383320U CN201868542U (en) | 2010-06-24 | 2010-06-24 | Polarization insensitive double-frequency active frequency selective surface structure |
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| CN2010202383320U CN201868542U (en) | 2010-06-24 | 2010-06-24 | Polarization insensitive double-frequency active frequency selective surface structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894990A (en) * | 2010-06-24 | 2010-11-24 | 东南大学 | Double-frequency polarization insensitive active frequency selective surface |
| CN102683790A (en) * | 2012-04-27 | 2012-09-19 | 西安空间无线电技术研究所 | Laser etching method of curve frequency selecting surface |
| CN104064840A (en) * | 2014-07-09 | 2014-09-24 | 南京师范大学 | Miniaturization band elimination type frequency selective surface |
-
2010
- 2010-06-24 CN CN2010202383320U patent/CN201868542U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894990A (en) * | 2010-06-24 | 2010-11-24 | 东南大学 | Double-frequency polarization insensitive active frequency selective surface |
| CN102683790A (en) * | 2012-04-27 | 2012-09-19 | 西安空间无线电技术研究所 | Laser etching method of curve frequency selecting surface |
| CN104064840A (en) * | 2014-07-09 | 2014-09-24 | 南京师范大学 | Miniaturization band elimination type frequency selective surface |
| CN104064840B (en) * | 2014-07-09 | 2016-08-24 | 南京师范大学 | Miniaturization band resistance type frequency-selective surfaces |
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Granted publication date: 20110615 Termination date: 20140624 |
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