CN201820780U - 发光二极管芯片 - Google Patents
发光二极管芯片 Download PDFInfo
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- CN201820780U CN201820780U CN2010202755291U CN201020275529U CN201820780U CN 201820780 U CN201820780 U CN 201820780U CN 2010202755291 U CN2010202755291 U CN 2010202755291U CN 201020275529 U CN201020275529 U CN 201020275529U CN 201820780 U CN201820780 U CN 201820780U
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- 238000002161 passivation Methods 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 230000004888 barrier function Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010202755291U CN201820780U (zh) | 2010-07-27 | 2010-07-27 | 发光二极管芯片 |
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CN2010202755291U CN201820780U (zh) | 2010-07-27 | 2010-07-27 | 发光二极管芯片 |
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CN201820780U true CN201820780U (zh) | 2011-05-04 |
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CN2010202755291U Expired - Lifetime CN201820780U (zh) | 2010-07-27 | 2010-07-27 | 发光二极管芯片 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110212062A (zh) * | 2019-06-20 | 2019-09-06 | 合肥彩虹蓝光科技有限公司 | 一种倒装发光二极管及其制造方法 |
CN113594326A (zh) * | 2021-07-29 | 2021-11-02 | 厦门三安光电有限公司 | 一种发光二极管、发光模块及显示装置 |
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2010
- 2010-07-27 CN CN2010202755291U patent/CN201820780U/zh not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110212062A (zh) * | 2019-06-20 | 2019-09-06 | 合肥彩虹蓝光科技有限公司 | 一种倒装发光二极管及其制造方法 |
CN113594326A (zh) * | 2021-07-29 | 2021-11-02 | 厦门三安光电有限公司 | 一种发光二极管、发光模块及显示装置 |
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Denomination of utility model: Installing method for light-emitting diode chip Effective date of registration: 20130108 Granted publication date: 20110504 Pledgee: Pudong Development Bank of Shanghai, Limited by Share Ltd, Jiaxing branch Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000017 |
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Date of cancellation: 20130702 Granted publication date: 20110504 Pledgee: Pudong Development Bank of Shanghai, Limited by Share Ltd, Jiaxing branch Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000017 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
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Denomination of utility model: Installing method for light-emitting diode chip Effective date of registration: 20130822 Granted publication date: 20110504 Pledgee: Haiyan Hangzhou Bay Bridge New Area Development Co., Ltd. Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000603 |
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Owner name: ZHEJIANG INVENLUX TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: INVENLUX OPTOELECTRONICS (CHINA) CO., LTD. Effective date: 20150827 |
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Effective date of registration: 20150827 Address after: 314300, Jiaxing Province, Haiyan County, Zhejiang Economic Development Zone, Hangzhou Bay Bridge, New District, 01 provincial road, B7 Road East Patentee after: Zhejiang Invenlux Technology Co.,Ltd. Address before: 314305 No. 1, Silver Beach Road, Haiyan County Development Zone, Zhejiang Patentee before: InvenLux Photoelectronics (China) Co., Ltd. |
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Date of cancellation: 20150813 Granted publication date: 20110504 Pledgee: Haiyan Hangzhou Bay Bridge New Area Development Co., Ltd. Pledgor: InvenLux Photoelectronics (China) Co., Ltd. Registration number: 2013990000603 |
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