CN201820566U - Multilayer film structure generating magnetic offset field - Google Patents
Multilayer film structure generating magnetic offset field Download PDFInfo
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- CN201820566U CN201820566U CN2010202173873U CN201020217387U CN201820566U CN 201820566 U CN201820566 U CN 201820566U CN 2010202173873 U CN2010202173873 U CN 2010202173873U CN 201020217387 U CN201020217387 U CN 201020217387U CN 201820566 U CN201820566 U CN 201820566U
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- pinning
- bias field
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Abstract
The utility model relates to a multilayer film structure generating magnetic offset field, which comprises a seeding layer and a protective layer. At least one magnetic pinned layer, at least one nonmagnetic pinning layer or one hard magnetic layer is arranged between the seeding layer and the protective layer, the nonmagnetic pinning layer is a magnetic pining field for the magnetic pinned layer, the direction of the magnetic pinning field is the same as that of the magnetic offset field, and the magnetic pining field is capable of maintaining directional stability of the magnetic offset field. When the hard magnetic layer is arranged between the seeding layer and the protective layer, the outer circumferences of the seeding layer and the protective layer are wound by current conductors, and when the current conductors are electrified by current, the magnetic offset field generated by the hard magnetic layer can be corrected. The generated magnetic offset field can be restored under higher external magnetic field interference and without removal of the magnetic field, so that a magnetic sensor system functions normally, and power consumption loss is avoided.
Description
Technical field
The utility model relates to a kind of membrane structure, especially a kind of multi-layer film structure that produces magnetic bias field, and specifically a kind of design and preparation that is used for magnetic sensor improves the precision of magnetic sensor and the membrane structure of the linearity.
Background technology
The magnetic bias field technology is widely used in the design of magnetic sensor and preparation, its major function is to reduce the noise and the magnetic hysteresis of magnetic sensor, (application of magnetic head in hard disc of computer) such as the precision of raising magnetic sensor and symmetry can also play the effect (application in AMR electronic compass chip) of initialization magnetic sensor.
In the read head part of hard disc of computer magnetic head chip, the magnetic bias field that is adopted is produced by the hard magnetic layer thin-film material, this layer permanent thin film material has higher proud stupid power and higher remanent magnetism, and the size of the bias-field that it produced can be controlled by reconciling thickness and remanent magnetism.In hard disc of computer read head chip part, also be provided with two-layer magnetic shield on the described permanent thin film, described magnetic shield has protected the hard magnetic material that produces magnetic bias field not to be subjected to the interference in outfield.But, in design, preparation and the application of other magnetic sensor, owing to can't provide with the identical magnetic shield of hard disk, if adopt this magnetic bias field technology, under the situation that runs into bigger external magnetic field interference (external magnetic field is greater than the proud stupid power of permanent thin film), the direction of bias-field that permanent thin film produces can change, thus the expendable characteristic that changes magnetic.
In the application of AMR electronic compass chip, the magnetic bias field that is adopted is provided by an ampere wires that is integrated on the chip, and the size of magnetic bias field has by the size of current of ampere wires to be set.Its effect is after the AMR magnetic sensor is disturbed, to reinitialize the AMR magnetic sensor chips.Its shortcoming is to provide bias-field to magnetic sensor in real time, otherwise the power consumption of transducer can be very big.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, a kind of multi-layer film structure that produces magnetic bias field is provided, it can be subjected to big external magnetic field interference, and after outside magnetic field removes, the magnetic bias field that is produced can recover, thereby make the biosensor systems can operate as normal, and do not have the loss of power consumption aspect.
For achieving the above object, first kind of technical scheme providing of the utility model is that the multi-layer film structure of described generation magnetic bias field comprises Seed Layer; Described Seed Layer is provided with one deck magnetic nailed layer and the non magnetic pinning layer of one deck at least at least.
Described Seed Layer top also is provided with draws together protective layer; At least one deck magnetic nailed layer and the non magnetic pinning layer of one deck at least are set between described protective layer and Seed Layer.The material of described non magnetic pinning layer comprises MnIr or MnPt.The material of described magnetic nailed layer comprises the composite bed that CoFeB, CoFe, NiFe or CoFe, Ru and CoFe form.The material of described protective layer comprises Ta, Pt or Ti.
For achieving the above object, second kind of technical scheme providing of the utility model is that the multi-layer film structure of described generation magnetic bias field comprises Seed Layer; Described Seed Layer is provided with hard magnetic layer; Be wound with ampere wires on the outer peripheral face of described Seed Layer and hard magnetic layer formation composite bed.
Described Seed Layer top also is provided with protective layer, and described protective layer is positioned on the hard magnetic layer; Described ampere wires is wrapped in the outer peripheral face that Seed Layer, hard magnetic layer and protective layer form composite bed.Feed electric current in the described ampere wires, make the direction in ampere wires generation magnetic field identical, and the magnetic field that ampere wires produces makes the direction of magnetic bias field keep stable with the direction that hard magnetic layer produces magnetic bias field.
Advantage of the present utility model: the non magnetic pinning layer of one deck and one deck magnetic nailed layer at least at least are set on Seed Layer, the magnetic pinning field that produces by non magnetic pinning layer makes the direction of the magnetic bias field of magnetic nailed layer generation keep stable, improved antijamming capability, technological operation is simple, has reduced power consumption penalty.Hard magnetic layer is set on Seed Layer, hard magnetic layer produces magnetic bias field, in ampere wires, feed electric current, the magnetic field that ampere wires is produced is identical with the magnetic bias field direction of hard magnetic layer, and can make at magnetic bias field and add under the action of a magnetic field, can keep the stable of magnetic bias field direction, technology realizes simple, and antijamming capability is strong.
Description of drawings
Fig. 1 is first kind of execution mode structural representation of the present utility model.
Fig. 2 is second kind of execution mode structural representation of the present utility model.
Fig. 3 is the third execution mode structural representation of the present utility model.
Fig. 4 is the 4th a kind of execution mode structural representation of the present utility model.
Fig. 5 is the 5th a kind of execution mode structural representation of the present utility model.
Fig. 6 is the 6th a kind of execution mode structural representation of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with concrete drawings and Examples.
As Fig. 1～shown in Figure 6: the utility model comprises Seed Layer 1, non magnetic pinning layer 2, magnetic nailed layer 3, protective layer 4, magnetic bias field direction 5, hard magnetic layer 6, ampere wires 7 and electric current 8.
As shown in Figure 1, for adopting the structural representation of four-layer structure.Non magnetic pinning layer 2 is set on the described Seed Layer 1, and described Seed Layer 1 provides crystal lattice orientation preferably, for non magnetic pinning layer 2 and 3 of magnetic nailed layers provide substrate.On the described non magnetic pinning layer 2 magnetic nailed layer 3 is set, on the described magnetic nailed layer 3 protective layer 4 is set, described protective layer 4 can be protected magnetic nailed layer 3, non magnetic pinning layer 2 and Seed Layer 1, prolongs the useful life of membrane structure.Described non magnetic pinning layer 2 makes the direction of the magnetic bias field of magnetic nailed layer 3 generations keep stable for magnetic nailed layer 3 provides a magnetic pinning field.The size that described magnetic nailed layer 3 produces magnetic bias field can put in order different and different control of thickness magnetic nailed layer 3 by 3 of non magnetic pinning layer 2 and magnetic nailed layers.The direction of described magnetic bias field is determined by the direction of the magnetic pinning field that non magnetic pinning layer 2 produces; The direction of the magnetic pinning field that described non magnetic pinning layer 2 produces is determined by tempering process.The tempering of described non magnetic pinning layer 2 is to carry out under the field intensity more than 5000 Gausses 270 ℃～330 ℃ temperature range, external magnetic field intensity, and the direction of described external magnetic field has determined the direction of magnetic pinning field.
As shown in Figure 2, for adopting the another kind of structural representation of four-layer structure.On the described Seed Layer 1 magnetic nailed layer 3 is set, is provided with non magnetic pinning layer 2 and protective layer 4 on the described magnetic nailed layer 3 successively.Described non magnetic pinning layer 2 makes the direction of the magnetic bias field of magnetic nailed layer 3 generations keep stable for magnetic nailed layer 3 provides a magnetic pinning field.The size that described magnetic nailed layer 3 produces magnetic bias field can put in order different and different control of thickness magnetic nailed layer 3 by 3 of non magnetic pinning layer 2 and magnetic nailed layers.The direction of described magnetic bias field is determined by the direction of the magnetic pinning field that non magnetic pinning layer 2 produces; The direction of the magnetic pinning field that described non magnetic pinning layer 2 produces is determined by tempering process.The tempering of described non magnetic pinning layer 2 is to carry out under the field intensity more than 5000 Gausses 270 ℃～330 ℃ temperature range, external magnetic field intensity, and the direction of described external magnetic field has determined the direction of magnetic pinning field.
As shown in Figure 3, for adopting the structural representation of five-layer structure.Described Seed Layer 1 top is provided with non magnetic pinning layer 2, and the both sides up and down of described non magnetic pinning layer 2 are provided with magnetic nailed layer 3.The magnetic nailed layer 3 of described non magnetic pinning layer 2 belows is positioned on the Seed Layer 1, and the magnetic nailed layer 3 of pinned magnetic layer 2 top correspondences is provided with protective layer 4.
As shown in Figure 4, implement structural representation for the another kind that adopts five-layer structure.4 of described Seed Layer 1 and protective layers are provided with two-layer non magnetic pinning layer 2 and one deck magnetic nailed layer 3, and described non magnetic pinning layer 2 is positioned at the both sides up and down of magnetic nailed layer 3.The non magnetic pinning layer 2 of magnetic nailed layer 3 below correspondences is positioned on the Seed Layer 1; The non magnetic pinning layer 2 of magnetic nailed layer 3 top correspondences is connected with protective layer 4.
As shown in Figure 5, for adopting the schematic diagram of plurality of compound structure.4 of described Seed Layer 1 and protective layers are provided with plurality of nonmagnetic pinning layer 2 and magnetic nailed layer 3.
As Fig. 1～shown in Figure 5, the direction of the magnetic bias field that described magnetic nailed layer 3 produces is shown in 5.The effect of magnetic nailed layer 3 provides bias-field, and its size is by the material behavior and the thickness decision of magnetic nailed layer 3; Among Fig. 1～Fig. 52 of magnetic nailed layer 3 and non magnetic pinning layers smoothly and quantity not simultaneously, the varying in size of the magnetic bias field that described membrane structure produces.The direction 5 of described magnetic bias field is the direction decision of the magnetic pinning field that produced by non magnetic pinning layer 2.The direction of the magnetic pinning field that described non magnetic pinning layer 2 produces will be by its tempering process decision, and tempering process is to anneal under bigger external magnetic field and higher temperature, and added outer magnetic field direction has determined the direction of magnetic pinning field.The direction of the magnetic pinning field that described non magnetic pinning layer 2 produces is identical with the direction of the magnetic bias field of magnetic nailed layer 3 generations, and the size of magnetic pinning field and direction thereof are not subjected to the interference of external magnetic field and change.When magnetic bias field is disturbed by external magnetic field and after changing, magnetic pinning field can be reset the direction of magnetic bias field return, thereby make the direction of magnetic bias field keep stable.
As shown in Figure 6, be the structural representation of second kind of technical scheme of the present utility model.On the described Seed Layer 1 hard magnetic layer 6 is set, on the described hard magnetic layer 6 protective layer 4 is set; Be wound with ampere wires 7 on the outer peripheral face that described Seed Layer 1 and protective layer are 4, when flowing through electric current in the ampere wires 7, the magnetic direction that ampere wires 7 produces is identical with the direction of the magnetic bias field that hard magnetic layer 6 produces.The crystal lattice orientation that provides of the effect of Seed Layer 1 wherein; The effect of hard magnetic layer 6 is to produce magnetic bias field; Whole multi-layer film structure is protected in the effect of protective layer 4, can prolong the useful life of described multi-layer film structure.
The material of described hard magnetic layer 6 has higher proud stupid power and higher remanent magnetism, and the size of the magnetic bias field that it produced can be controlled by reconciling thickness and remanent magnetism; The inceptive direction of described magnetic bias field is decided by the direction of the external magnetic field in magnetic technology.The magnetic technology of dashing of described hard magnetic layer 6 is to add the proud stupid power magnetic field that a magnetic field intensity is higher than hard magnetic material 6, and the direction of external magnetic field has determined the direction 5 of magnetic bias field.Ampere wires 7 is to be wrapped on the outer peripheral face of Seed Layer 1 and protective layer 4, when passing through its electric current 8 in the ampere wires 7, produces a magnetic field consistent with the magnetic bias field direction around ampere wires 7.When there is bigger magnetic interference magnetic bias field in the external world, the direction 5 that hard magnetic layer 6 produces magnetic bias field changes, in ampere wires 7, flow through electric current 8, the magnetic field that ampere wires 7 produces under electric current 8 effect can reset the direction of the magnetic bias field of hard magnetic layer 6, makes the direction of the magnetic bias field of hard magnetic layer 6 keep stable.The intensity in the magnetic field that described electric current 8 produces will be higher than the proud stupid power magnetic field of hard magnetic layer 6, guarantees to disturb the magnetic bias field that changes down to proofread and correct hard magnetic layer 6 outside magnetic field, and antijamming capability is strong.Behind the magnetic bias field correction for direction of hard magnetic layer 6, can the turn-off current lead electric current in 7, reduced the power consumption of multilayer film, energy-conserving and environment-protective.
The utility model is provided with the non magnetic pinning layer 2 of one deck and one deck magnetic nailed layer 3 at least at least on Seed Layer 1, the magnetic pinning field that produces by non magnetic pinning layer 2 makes the direction of the magnetic bias field of magnetic nailed layer 3 generations keep stable, improved antijamming capability, technological operation is simple, has reduced power consumption penalty.Hard magnetic layer 6 is set on Seed Layer 1, hard magnetic layer 6 produces magnetic bias field, in ampere wires 7, feed electric current 8, the magnetic field that ampere wires 7 is produced is identical with the magnetic bias field direction of hard magnetic layer 6, and can make at magnetic bias field and add under the action of a magnetic field, can keep the stable of magnetic bias field direction, technology realizes simple, and antijamming capability is strong.
Claims (4)
1. a multi-layer film structure that produces magnetic bias field is characterized in that, comprising:
Seed Layer;
At least one deck magnetic nailed layer, described magnetic nailed layer produces magnetic bias field;
At least the non magnetic pinning layer of one deck, described non magnetic pinning layer provides magnetic pinning field for the magnetic nailed layer, and the direction of described magnetic pinning field is identical with the direction of magnetic bias field, and magnetic pinning field energy enough keeps the stable of magnetic bias field direction.
2. the multi-layer film structure of generation magnetic bias field according to claim 1 is characterized in that: described Seed Layer top also is provided with protective layer; At least one deck magnetic nailed layer and the non magnetic pinning layer of one deck at least are set between described protective layer and Seed Layer.
3. a multi-layer film structure that produces magnetic bias field is characterized in that, comprising:
Seed Layer;
Hard magnetic layer, described hard magnetic layer is positioned on the Seed Layer, and described hard magnetic layer produces magnetic bias field;
Ampere wires, described ampere wires are wrapped on the composite bed outer peripheral face of Seed Layer and hard magnetic layer.
4. the multi-layer film structure of generation magnetic bias field according to claim 3 is characterized in that: described Seed Layer top also is provided with protective layer, and described protective layer is positioned on the hard magnetic layer; Described ampere wires is wrapped in the outer peripheral face that Seed Layer, hard magnetic layer and protective layer form composite bed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202173873U CN201820566U (en) | 2010-06-01 | 2010-06-01 | Multilayer film structure generating magnetic offset field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202173873U CN201820566U (en) | 2010-06-01 | 2010-06-01 | Multilayer film structure generating magnetic offset field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201820566U true CN201820566U (en) | 2011-05-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202173873U Expired - Lifetime CN201820566U (en) | 2010-06-01 | 2010-06-01 | Multilayer film structure generating magnetic offset field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201820566U (en) |
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2010
- 2010-06-01 CN CN2010202173873U patent/CN201820566U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiangsu Duowei Technology Co., Ltd. Assignor: Xue Songsheng Contract record no.: 2015990000816 Denomination of utility model: Multi-layer film structure producing magnetic bias field Granted publication date: 20110504 License type: Common License Record date: 20150923 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110504 |
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| CX01 | Expiry of patent term |