CN201809879U - Amorphous silicon photovoltaic color curtain wall glass - Google Patents
Amorphous silicon photovoltaic color curtain wall glass Download PDFInfo
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- CN201809879U CN201809879U CN2010202720894U CN201020272089U CN201809879U CN 201809879 U CN201809879 U CN 201809879U CN 2010202720894 U CN2010202720894 U CN 2010202720894U CN 201020272089 U CN201020272089 U CN 201020272089U CN 201809879 U CN201809879 U CN 201809879U
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- China
- Prior art keywords
- amorphous silicon
- glass
- silicon photovoltaic
- curtain wall
- photovoltaic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses amorphous silicon photovoltaic multi-color curtain wall glass which comprises a transparent glass substrate, and a non-conductive optical medium film layer which does not absorb sunlight, a transparent conductive film, an amorphous silicon p-i-n layer for sunlight absorption and photoelectric conversion and a metal electrode that are sequentially prepared on the glass substrate. The optical medium film layer, the transparent glass substrate, the transparent conductive film and an amorphous silicon film constitute a passive filter system for selectively reflecting and absorbing a solar spectrum. The amorphous silicon photovoltaic multi-color curtain wall glass shows multi-color appearance when being seen from the incident direction of the sunlight, thereby being in line with the requirement on aesthetics of modern downtown business districts and residential districts.
Description
Technical field
The utility model relates to a kind of cladding glass that is used for architectural decoration, is meant that specifically a kind of outward appearance has multicolour, can be used in the colored cladding glass of amorphous silicon photovoltaic of photovoltaic generation.
Background technology
Photovoltaic curtain wall glass is meant and is installed in the building outside to possess the large flat glass product of photovoltaic generation function and decoration sunshade function simultaneously.Along with the extensive use of solar electrical energy generation, (Building-Integrated Photovoltaic, photoelectric curtain-wall glass BIPV) have also caused people's extensive interest to BIPV (Building Integrated PV) gradually.There is the expert to foretell, the engineering that the solar power system that is incorporated into the power networks that adopts the photoelectric curtain-wall glass of light-electric architecture-integral assembly will become 21 century sells well the most.The U.S. in 1996 has just come into effect one and has been called " plan of photovoltaic building thing ", promptly produces a large amount of photovoltaic glass curtain wall goods, is used for roof of buildings, metope and photovoltaic intelligent door and window." towards the daily planning " of Ou Zhou " 1,000,000 roof photovoltaic plan " in addition,, Japan also promoted the development of photovoltaic building material product greatly and applied.China National Ministry of Finance in 2009 and house and town and country construction portion have issued " solar photoelectric Application in Building demonstrative project is declared guide ", to comprising that projects such as photovoltaic watt, photovoltaic brick, photovoltaic roof coiled material, photovoltaic curtain wall glass carry out financial subsidies, wherein photovoltaic curtain wall glass is the brightest green building of exploitation prospect.
Current photovoltaic glass curtain wall main flow is to adopt the amorphous silicon battery technology, promptly on large-area amorphous silicon battery plate, by increasing the thickness of fretwork area or reduction non-crystalline silicon absorbing membranous layer, suitably increase light transmittance, make it to become the photovoltaic electrification component that is suitable for the building glass curtain wall.At present the structure of amorphous silicon photovoltaic cladding glass as shown in Figure 1, wherein substrate 1 be a ultra-clear glasses, preparation has nesa coating 2, is used for the non-crystalline silicon p-i-n layer 3 and the metal electrode 4 of sunshine absorption and opto-electronic conversion successively on substrate 1.Because the refractive index of base plate glass, nesa coating, amorphous silicon layer is respectively 1.4,2,3.4, so these three kinds of materials have formed the low catoptric arrangement of a wide spectrum, help the absorption and the utilization of incident sunshine.The weak point of this photovoltaic curtain wall glass is the color dullness, and brown for the sauce of cool tone, no its aesthetic appearance is not suitable for modern city commercial area and uptown requirement.
Summary of the invention
At the weak point of aforementioned photovoltaic curtain wall glass, the purpose of this utility model is to propose a kind of colored cladding glass of amorphous silicon photovoltaic with colorful colourful outward appearance.Make it more appropriate to downtown and residential building appearance requirement.
The colored cladding glass of amorphous silicon photovoltaic of the present utility model, comprise: the ultrawhite clear glass substrate, on substrate of glass 1 successively preparation have non-conductive to the non-absorbent optical medium membrane stack 5 of sunshine, nesa coating 2, be used for that sunshine absorbs and the non-crystalline silicon p-i-n layer 3 and the metal electrode 4 of opto-electronic conversion.Said optical medium membrane stack 5 is alternately formed by two kinds of materials of H, L, and wherein H is a high refractive index layer, can be TiO
2, Ta
2O
5, Nb
2O
5A kind of Deng in the material, thickness is between 5-500nm; L is a low-index film, can be SiO
2, MgF
2A kind of in the material, thickness is between 5-500nm.
Said nesa coating can be ITO, SeO
2, AlZnO
2In a kind of, its thickness is 500-1000nm.
According to the principle of Film Optics, incident light wave is being determined by its eigenmatrix through the reflection characteristic after the above-mentioned passive filters system:
Wherein, n
1, n
2... n
kRefractive index for each rete; δ
1, δ
2... δ
kPhase place thickness for each rete; η
0Complex refractivity index for the incident medium; n
sComplex refractivity index for the outgoing medium; R is a reflectivity.
Therefore, can be according to the structure of the requirement of amorphous silicon photovoltaic cladding glass color design multilayer dielectricity membrane stack and the thickness of nesa coating, make selected sexual reflex of incident solar spectrum and absorption, reach the color of designing requirement.
Characteristics of the present utility model are: add the optical medium rete between substrate of glass and nesa coating, make optical medium rete and clear glass substrate, nesa coating, amorphous silicon film form the passive filters system that can carry out selective reflecting and absorption to solar spectrum.Look that from the sunshine incident direction amorphous silicon photovoltaic cladding glass presents colorful outward appearance, when incident angle changes, the color of cladding glass can change, and promptly the cladding glass color of seeing from positive and side observation post can be different, as the anti-forgery ink on the RMB.And the optical medium rete that is added can be realized solar electrical energy generation simultaneously to the almost not influence of electrology characteristic of p-i-n opto-electronic conversion structure.
Description of drawings
Fig. 1 is the structural representation of present existing amorphous silicon photovoltaic cladding glass.
Fig. 2 is the structural representation of the colored cladding glass of amorphous silicon photovoltaic of the present utility model.
The specific embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present utility model is described in further detail:
Embodiment 1
The colored cladding glass of the amorphous silicon photovoltaic of present embodiment presents blueness, and preparation process is as follows:
A. in the ultra-clear glasses substrate 1 of cleaning, be prepared as follows the medium membrane stack 5 and the nesa coating 2 of structure successively with magnetron sputtering or thermal evaporation method:
Ultra-clear glasses substrate/SiO
2(33nm)/TiO
2(51nm)/SiO
2(51nm)/TiO
2(42nm)/AlZnO
2(815nm), in the bracket be the geometric thickness of prepared rete.
B. above-mentioned plated film face is carried out cutting with laser, groove depth just cuts off AlZnO fully
2Film and do not have influence on the medium membrane stack.
C. at AlZnO
2Prepare p-i-n layer 3 successively with chemical gaseous phase depositing process on the film, that is, p type SiC, thickness are 50nm; I type a-Si, thickness are 500nm; N type amorphous silicon film layer, thickness are 10nm.
D. above-mentioned hetero-junctions rete is carried out cutting and handle, the cutting position of the above-mentioned b of cutting position deviation in the step, groove depth is not to be damaged to AlZnO
2Layer is advisable, as shown in Figure 2.
E. obtain on the face to prepare Al layer about 1000nm as electrode layer in above-mentioned technology with methods such as vacuum thermal evaporation or sputters.
F. on p-i-n layer 3 and Al, carry out groove as shown in Figure 2 and handle, form the battery series connection, finish the device preparation.
The colored cladding glass of the amorphous silicon photovoltaic of present embodiment presents green
Its structure is identical with embodiment 1 with preparation technology, and difference only is the media coating thickness difference of alternating growth, present green, and its media coating thickness is: TiO
2(73nm)/SiO
2(32nm)/TiO
2(14nm)/SiO
2(255nm)/AZO (720nm)
To expect that equally other color can realize by the media coating thickness of conversion alternating growth.
Claims (4)
1. the colored cladding glass of an amorphous silicon photovoltaic, comprise: ultrawhite clear glass substrate (1), it is characterized in that: on substrate of glass (1) successively preparation have non-conductive to the non-absorbent optical medium membrane stack of sunshine (5), nesa coating (2), be used for that sunshine absorbs and the non-crystalline silicon p-i-n layer (3) and the metal electrode (4) of opto-electronic conversion, said optical medium membrane stack 5 is alternately formed by two kinds of materials of H, L, wherein H is a high refractive index layer, and L is a low-index film.
2. according to the colored cladding glass of a kind of amorphous silicon photovoltaic of claim 1, it is characterized in that: said high refractive index layer is TiO
2, Ta
2O
5, Nb
2O
5A kind of in the material, thickness is between 5-500nm.
3. according to the colored cladding glass of a kind of amorphous silicon photovoltaic of claim 1, it is characterized in that: said low-index film is SiO
2, MgF
2A kind of in the material, thickness is between 5-500nm.
4. according to the colored cladding glass of a kind of amorphous silicon photovoltaic of claim 1, it is characterized in that: said nesa coating is ITO, SeO
2, AlZnO
2A kind of, its thickness is 500-1000nm.
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CN2010202720894U CN201809879U (en) | 2010-07-27 | 2010-07-27 | Amorphous silicon photovoltaic color curtain wall glass |
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CN2010202720894U CN201809879U (en) | 2010-07-27 | 2010-07-27 | Amorphous silicon photovoltaic color curtain wall glass |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102444226A (en) * | 2011-09-19 | 2012-05-09 | 东旭集团有限公司 | Process for fabricating photoelectric curtain wall glass |
WO2013175325A1 (en) * | 2012-05-24 | 2013-11-28 | International Business Machines Corporation | Photovoltaic device with band-stop filter |
CN105280728A (en) * | 2014-06-05 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Color solar cell and manufacturing method thereof |
CN108109721A (en) * | 2017-12-12 | 2018-06-01 | 中国南玻集团股份有限公司 | Colourful transparent conductive film and its preparation method and application |
CN109920866A (en) * | 2017-12-12 | 2019-06-21 | 中国南玻集团股份有限公司 | Integrative color photovoltaic component, preparation method and application |
CN112652675A (en) * | 2020-11-26 | 2021-04-13 | 龙焱能源科技(杭州)有限公司 | Color film photovoltaic module and preparation method thereof |
-
2010
- 2010-07-27 CN CN2010202720894U patent/CN201809879U/en not_active Expired - Lifetime
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102444226A (en) * | 2011-09-19 | 2012-05-09 | 东旭集团有限公司 | Process for fabricating photoelectric curtain wall glass |
CN102444226B (en) * | 2011-09-19 | 2013-11-06 | 东旭集团有限公司 | Process for fabricating photoelectric curtain wall glass |
WO2013175325A1 (en) * | 2012-05-24 | 2013-11-28 | International Business Machines Corporation | Photovoltaic device with band-stop filter |
CN104303318A (en) * | 2012-05-24 | 2015-01-21 | 国际商业机器公司 | Photovoltaic device with band-stop filter |
GB2516599A (en) * | 2012-05-24 | 2015-01-28 | Ibm | Photovoltaic device with band-stop filter |
GB2516599B (en) * | 2012-05-24 | 2015-11-18 | Ibm | Photovoltaic device with band-stop filter |
CN104303318B (en) * | 2012-05-24 | 2016-08-31 | 国际商业机器公司 | There is photovoltaic device and the operational approach thereof of band-block filter |
US11908963B2 (en) | 2012-05-24 | 2024-02-20 | Internationa Business Machines Corporation | Photovoltaic device with band-stop filter |
CN105280728A (en) * | 2014-06-05 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Color solar cell and manufacturing method thereof |
CN108109721A (en) * | 2017-12-12 | 2018-06-01 | 中国南玻集团股份有限公司 | Colourful transparent conductive film and its preparation method and application |
CN109920866A (en) * | 2017-12-12 | 2019-06-21 | 中国南玻集团股份有限公司 | Integrative color photovoltaic component, preparation method and application |
CN112652675A (en) * | 2020-11-26 | 2021-04-13 | 龙焱能源科技(杭州)有限公司 | Color film photovoltaic module and preparation method thereof |
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Granted publication date: 20110427 |