CN201774136U - Mode-hop-free continuously-tuned semiconductor laser - Google Patents
Mode-hop-free continuously-tuned semiconductor laser Download PDFInfo
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- CN201774136U CN201774136U CN2010201876265U CN201020187626U CN201774136U CN 201774136 U CN201774136 U CN 201774136U CN 2010201876265 U CN2010201876265 U CN 2010201876265U CN 201020187626 U CN201020187626 U CN 201020187626U CN 201774136 U CN201774136 U CN 201774136U
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Abstract
The utility model embodiment discloses a mode-hop-free continuously-tuned semiconductor laser. The semiconductor laser comprises a gain medium, a first collimation lens, a diffraction grating, a second collimation lens, a third collimation lens, a beam reflector and a tuning device, wherein the third collimation lens and the beam reflector are arranged on the tuning device; and the tuning device is used for driving the third collimation lens to conduct translational motions in the direction perpendicular to the optical axis penetrating the optical center of the second collimation lens in a light path plane where diffracted rays are positioned, and simultaneously driving the beam reflector for translational motions in the direction of the optical axis penetrating the optical center of the second collimation lens, so as to realize the mode-hop-free continuous tuning of output laser frequency. The laser adopting the structure can realize the mode-hop-free continuous tuning of laser frequency, so as to improve the frequency tuning stability and reduce the production cost of the laser.
Description
Technical field
The utility model relates to semiconductor laser field, refers in particular to a kind of mode jump free continuous tuning semiconductor laser.
Background technology
The wavelength tuning technology of light source is the important component part in the laser technology, and tunable grating external-cavity semiconductor laser (GTECL, Grating-tuned external cavity lasers) owing to can produce the laser beam of frequency-tunable, narrow linewidth and high optical coherence, therefore progressively become the core light source block of multiple application apparatuss such as high resolution spectral measuring, optical communication, laser metrology, optical storage, atomic clock, optic fiber gyroscope and biomedical detection, and be widely used in every field.
In the prior art, the tunable grating external-cavity semiconductor laser generally has two types.A kind of is Li Teluo (Littrow) type tunable grating external-cavity semiconductor laser, and another kind is Li Teman-Mai Te koff (Littman-Metcalf) type tunable grating external-cavity semiconductor laser.Wherein, because Littman-Metcalf type tunable grating external-cavity semiconductor laser can produce the laser beam of broadband, tuning without mode skip by its compact cavity resonator structure, so Littman-Metcalf type tunable grating external-cavity semiconductor laser has become the major product and one of design of semiconductor laser with tunable in the prior art.
Fig. 1 is the schematic diagram of Littman-Metcalf type tunable grating external-cavity semiconductor laser in the prior art.As shown in Figure 1, comprise gain media (gain medium) 101, collimating lens 102, diffraction grating (diffraction grating) 103 and light wave reflector 108 in this Littman-Metcalf type tunable grating external-cavity semiconductor laser.Wherein, above-mentioned gain media 101 can be used for producing the stable gain of light, and the laser that enters this gain media 101 is amplified.Therefore, above-mentioned gain media 101 generally can be semiconductor laser (Laser diode), diode laser or diode emitters chip (for example, Fabry-Pero type diode emitters chip commonly used, or other has the device of similar functions).
As shown in Figure 1, above-mentioned gain media 101 has a rear surface 106 and a front surface 107, the light beam that is produced in this gain media 101 can obtain a collimated light beam after passing through collimating lens 102, and this collimated light beam incides on the diffraction grating 103 back by these diffraction grating 103 diffraction; Wherein, the zero order diffracted light that produces owing to diffraction can be directly as output laser 104; First-order diffraction light then is diffracted into light wave reflector 108, return in the gain media 101 along former input path then, in gain media 101,, become output laser 105 through after vibration, amplifying, thereby realize single longitudinal mode (SLM, single longitudinalmode) the laser output of narrow linewidth.
In above-mentioned tunable grating external-cavity semiconductor laser, described light wave reflector 108 can rotate around rotating shaft L.Wherein, described rotating shaft L is positioned on the intersection point of reflecting surface extended line of the extended line of Difraction surface of extended line, diffraction grating 103 of the rear surface 106 of gain media 101 and light wave reflector 108, and this rotating shaft L is perpendicular to the paper direction; The G point is the intersection point of optical axis 100 and diffraction grating 103 Difraction surfaces; The Q point is the diffracted ray of ordering by G and the intersection point of light wave reflector 108.
In above-mentioned tunable grating external-cavity semiconductor laser, diffraction grating 103 maintains static, and light wave reflector 108 then can be around fixing rotating shaft L rotation.When light wave reflector 108 when rotating shaft L rotates, diffraction angle changes, outer cavity long (being the summation of the light path between two of distance between 2 of M, the G and G, the Q points) also changes; When rotating shaft L is in suitable position, can make that the long variation of outer cavity of laser at this moment is synchronous with the variation of laser wavelength, thereby can make modulus N remain a constant, so it is constant to keep modulus N when laser frequency changes, thereby realization is to the mode jump free continuous tuning of laser frequency.
Though above-mentioned Littman-Metcalf type tunable grating external-cavity semiconductor laser can produce the tuning without mode skip scope that covers whole maximum by the spectral region that diffraction grating produced, but, because the position of above-mentioned light wave reflector 108 is generally far away apart from rotating shaft L center, so can only adopt the mechanical rotation mode to drive light wave reflector 108, with the change that realizes optical maser wavelength or frequency and tuning.Under the applicable cases of reality, the light wave reflector of complicated mechanical rotating mechanism and oversize in the above-mentioned Littman-Metcalf type tunable grating external-cavity semiconductor laser has seriously restricted the frequency tuning and the multiple scanning speed of this laser; And, because the restriction of industrial manufacturing technology and debugging method, generally all there is the problem of optics chromatic dispersion and mechanical location misalignment in tunable grating external-cavity semiconductor laser shown in Figure 1, thereby has also limited the tuning without mode skip scope of this laser greatly.
In summary, exist above-mentioned problems in the prior art in the employed laser, thereby limited the tunable grating external-cavity semiconductor laser greatly in various Application for Field.Therefore, people are starved of a kind of mode jump free continuous tuning semiconductor laser of realizing not having continuously mode hopping and low cost of manufacture, compact conformation, to realize the mode jump free continuous tuning to laser frequency.
The utility model content
In view of this, main purpose of the present utility model is to provide a kind of mode jump free continuous tuning semiconductor laser, thereby can realize the mode jump free continuous tuning to laser frequency, improves frequency tuning stability, and reduces the production cost of described laser.
For achieving the above object, the technical scheme among the utility model embodiment is achieved in that
A kind of mode jump free continuous tuning semiconductor laser, this laser comprises: gain media, first collimating lens, diffraction grating, second collimating lens, the 3rd collimating lens, beam reflector and tuner;
The coherent beam of described gain media output is collimated light beam through becoming to be calibrated to behind described first collimating lens, described collimated light beam by described diffraction grating diffraction after, the part diffracted beam is output as the first output laser; After another part diffracted beam impinges perpendicularly on described beam reflector through the telescopic system of being made up of described second collimating lens and described the 3rd collimating lens, reflected by described beam reflector and be back in the described gain media along former input path; When the described light beam that is back to described gain media through the amplification of described gain media and when meeting or exceeding predefined laser oscillation threshold, a described part that is back to the light beam of described gain media is output as the rear surface of the second output laser via described gain media; The described remainder that is back to the light beam of described gain media will be amplified and be outputed to described diffraction grating and described beam reflector once more after the reflection of the rear surface of described gain media, and will be back to the rear surface of described gain media after the described beam reflector reflection once more along input path;
Wherein, described the 3rd collimating lens and beam reflector are arranged on the described tuner;
Described tuner, be used to drive described the 3rd collimating lens in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis that falls telescopic system, and drive described beam reflector simultaneously along the described benchmark optical axis translation of telescopic system, to realize mode jump free continuous tuning to the laser frequency of being exported.
Described tuner comprises: first driver part and second driver part; Wherein,
Described first driver part is used for supporting or described the 3rd collimating lens being set, and drive described the 3rd collimating lens in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis that falls telescopic system;
Described second driver part is used for supporting or described beam reflector being set, and drives described beam reflector along the described benchmark optical axis translation of telescopic system.
Described first driver part comprises: the first mechanical elasticity structure and first driver;
The described first mechanical elasticity structure is used for being provided with or supporting described the 3rd collimating lens;
Described first driver is used to drive the described first mechanical elasticity structure, make described the 3rd collimating lens in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis that falls telescopic system;
Described second driver part comprises: the second mechanical elasticity structure and second driver;
The described second mechanical elasticity structure is used for being provided with or supporting described beam reflector;
Described second driver is used to drive the described second mechanical elasticity structure, makes described beam reflector along the described benchmark optical axis translation of telescopic system.
The described first mechanical elasticity structure also is used for the actuating force of described first driver synchronously;
The described second mechanical elasticity structure also is used for the actuating force of described second driver synchronously.
Described first driver and second driver are piezoelectric ceramic actuator;
The described first mechanical elasticity structure and the second mechanical elasticity structure are: by wired elastic connection structure that is cut into.
Described first driver part and second driver part are: piezoelectric ceramic linear actuating device, stepping motor or microelectromechanical systems.
Described laser also comprises: be arranged at the smallcolumn diaphragm on the common focal plane of described second collimating lens and the 3rd collimating lens; The logical light center of described smallcolumn diaphragm overlaps with the lens centre of described the 3rd collimating lens;
Described smallcolumn diaphragm is used to strengthen to exporting the frequency-selecting of laser single longitudinal mode.
Described smallcolumn diaphragm is provided with manhole or logical optical slits.
Described laser also comprises: be arranged at the partially reflecting mirror on the light path between described first collimating lens and the diffraction grating;
Described partially reflecting mirror has been used to produce the 4th output laser and filtering the 3rd of spectral noise and has exported laser.
Described partially reflecting mirror is spectroscope or spatial filter.
Described laser also comprises: the fiber optic collimator device;
Described fiber optic collimator device is used for a branch of at least output laser coupled with described laser to required required optical fiber.
Described fiber optic collimator device comprises: light beam harvester, optical isolator and calibration lens; Wherein,
Described light beam harvester is used to gather described output laser, and the output laser that will collect is transported to optical isolator;
Described optical isolator is used to prevent the interference of external feedback light, and realizes the unidirectional output of described output laser;
Described calibration lens, the output laser that is used for described optical isolator is exported collimates, and makes described output laser become parallel laser beam; The output laser that perhaps is used for described optical isolator is exported focuses on, and makes the output laser of described output be coupled in the required optical fiber.
Described gain media is: semiconductor laser diode, semiconductor laser diode array or semiconductor laser diode emitter chip.
Described beam reflector is: plane mirror or accurate right angle optical prism.
Described second collimating lens and the 3rd collimating lens are: optical spherical lens, optical cylindrical lens or optical holographic lens.
The rear surface of described gain media is partially reflecting mirror or total reflective mirror.
In summary, provide a kind of mode jump free continuous tuning semiconductor laser among the embodiment of the present utility model.Comprise gain media in this mode jump free continuous tuning semiconductor laser, first collimating lens, diffraction grating, second collimating lens, the 3rd collimating lens, beam reflector and tuner, described the 3rd collimating lens and beam reflector are arranged on the described tuner, described second collimating lens and described the 3rd collimating lens form to fall telescopic system, and described tuner can drive described the 3rd collimating lens in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis that falls telescopic system, and drive described beam reflector simultaneously along the described benchmark optical axis translation of telescopic system, thereby can realize mode jump free continuous tuning to laser frequency, improve frequency tuning stability, and reduce the production cost of described laser.
Description of drawings
Fig. 1 is the schematic diagram of Littman-Metcalf type tunable grating external-cavity semiconductor laser in the prior art.
Fig. 2 is the structural representation of mode jump free continuous tuning semiconductor laser among the utility model embodiment one.
Fig. 3 is the principle schematic of mode jump free continuous tuning semiconductor laser among the utility model embodiment one.
Fig. 4 is the structural representation of the tuner among the utility model embodiment one.
Fig. 5 is the structural representation of mode jump free continuous tuning semiconductor laser among the utility model embodiment two.
Fig. 6 is the structural representation of mode jump free continuous tuning semiconductor laser among the utility model embodiment three.
Embodiment
For making the purpose of this utility model, technical scheme and advantage express clearlyer, the utility model is further described in more detail below in conjunction with drawings and the specific embodiments.
Fig. 2 is the structural representation of the mode jump free continuous tuning semiconductor laser among the utility model embodiment one.As shown in Figure 2, the synchronously driven mode jump free continuous tuning semiconductor laser in the utility model comprises: gain media 201, first collimating lens 202, diffraction grating 203, second collimating lens 208, the 3rd collimating lens 209, beam reflector 210 and tuner 212.
Wherein, described gain media 201 is used to produce the stable gain of light and sends coherent beam, also can the laser that enter this gain media 101 be amplified simultaneously.Therefore, above-mentioned gain media 201 generally can be semiconductor laser diode, semiconductor laser diode array or semiconductor laser diode emitter chip.In specific embodiment of the utility model, this gain media 201 can comprise that the rear surface 206, one of a total reflection or partial reflection are coated with antireflection (AR, anti-reflection) the preceding output surface 207 of coating and a semiconductor laser diode emitter chip are (for example, Fabry-Pero N-type semiconductor N chip of laser commonly used, or other device) with similar functions; In addition, in specific embodiment of the utility model, described diffraction grating 203 can be provided with and be fixed on the base of semiconductor laser; Described beam reflector 210 can be plane mirror, accurate right angle optical prism or other reflective optics; And described second collimating lens 208 and the 3rd collimating lens 209 can be formed down telescopic system, and described second collimating lens 208 and the 3rd collimating lens 209 can be: optical spherical lens, optical cylindrical lens, optical holographic lens or other light collecting device, wherein, described various lens can be: concavees lens, convex lens or other can satisfy the optical lens that light is collected.For example, second collimating lens 208 shown in Fig. 2 and the 3rd collimating lens 209 are the optics cylindrical convex lens.
As shown in Figure 2, by described gain media 201 from the coherent beam of its preceding output surface 207 outputs through behind described first collimating lens 202, be calibrated to be that collimated light beam, described collimated light beam incide described diffraction grating 203 after, by described diffraction grating 203 diffraction; Wherein, part diffracted beam (for example, Zero-order diffractive light beam) will be output as the first output laser 204; Another part diffracted beam (for example, the first-order diffraction light beam) telescopic system that falls through forming by described second collimating lens 208 and described the 3rd collimating lens 209, impinge perpendicularly on described beam reflector 210, be back in the described gain media 201 by described beam reflector 210 reflections and along former input path then.
When the described light beam that is back to described gain media 201 through the amplification of described gain media 201 and when meeting or exceeding predefined laser oscillation threshold, a described part that is back to the light beam of described gain media 201 will be output as the rear surface 206 of the second output laser 205 via described gain media; The described remainder that is back to the light beam of described gain media 201 will be amplified once more after rear surface 206 reflections of described gain media 201 and be outputed to described diffraction grating 203 and described beam reflector 210, and will be back to the rear surface 206 of described gain media 201 after described beam reflector 210 reflections once more along input path.Wherein, the rear surface of described gain media can be partially reflecting mirror or total reflective mirror.
Hence one can see that, the external resonant cavity of above-mentioned mode jump free continuous tuning semiconductor laser (abbreviating exocoel as) is limited by the rear surface 206 of gain media 201, diffraction grating 203 and beam reflector 210, therefore, the external cavity length of this semiconductor laser is the optical distance between M, the G and the summation of the optical distance between G, the L point at 2.Wherein, the G point is the intersection point of the Difraction surface of optical axis 200 and diffraction grating 203; The L point is by the G point and impinges perpendicularly on the diffracted ray of described light wave reflector 210 and the intersection point of light wave reflector 210.
In order to realize mode jump free continuous tuning, in the technical solution of the utility model, also comprise a tuner 212 in the semiconductor laser shown in Figure 2 to laser frequency.Described the 3rd collimating lens 209 and beam reflector 210 all are arranged on the described tuner 212, therefore, tuner 212 can drive described the 3rd collimating lens 209 in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis 211 that falls telescopic system, and drive described beam reflector 210 simultaneously along described benchmark optical axis 211 translations of telescopic system, to realize mode jump free continuous tuning to the laser frequency of being exported.Wherein, according to fall telescopic system operation principle as can be known, under initial condition, the described benchmark optical axis 211 that falls telescopic system is by the photocentre of described second collimating lens 208 and the 3rd collimating lens 209, and perpendicular to the reflecting surface of described beam reflector 210.
Fig. 3 is the schematic diagram of the mode jump free continuous tuning semiconductor laser among the utility model embodiment one.As shown in Figure 3, when above-mentioned the 3rd collimating lens 209 and beam reflector 210 are in initial condition, when occurrence positions does not move, diffracted ray with corresponding angle of diffraction can impinge perpendicularly on described beam reflector 210 through the telescopic system of being made up of described second collimating lens 208 and described the 3rd collimating lens 209 that falls.At this moment, the above-mentioned angle of diffraction is that the optical axis of the diffracted ray of θ is the benchmark optical axis 211 of the photocentre of photocentre by G point, second collimating lens 208 and the 3rd collimating lens 209.
If the angle of diffraction of above-mentioned diffracted ray is θ, the angle of the directional light that penetrates from described first collimating lens 202 and the normal of diffraction grating is θ
0, the delineation density of diffraction grating 203 is d
g, then according to condition of resonance as can be known, this moment, the centre wavelength by these diffraction grating 203 selected laser was:
λ(θ)＝2d
g·(sinθ
0+sinθ) (1)
And when the angle of diffraction was θ, the external cavity length of this laser was the optical distance between 2 of M, the G and the summation L of the optical distance between G, the L point
Light(θ), then as can be known according to grating equation:
Wherein, N (θ) represents when the angle of diffraction is θ, the modulus of N longitudinal mode in the resonant cavity of above-mentioned mode jump free continuous tuning semiconductor laser, and N (θ) is an integer.
When above-mentioned the 3rd collimating lens 209 is driven by tuner 212 and along perpendicular to the predetermined segment distance of the direction translation of described benchmark optical axis 211 time, the diffracted ray of the above-mentioned θ of being diffracted to is behind the telescopic system that process is made up of described second collimating lens 208 and described the 3rd collimating lens 209, to no longer be to impinge perpendicularly on the described beam reflector 210, therefore, this diffracted ray can not return diffraction grating 203 and return in the gain media 201 along input path.But, as shown in Figure 3, according to fall telescopic system operation principle as can be known, must have this moment corresponding diffracted ray still can to impinge perpendicularly on the described beam reflector 210 by the above-mentioned telescopic system that falls.
At this moment, the angle of diffraction that can establish above-mentioned corresponding diffracted ray is θ ', and then according to condition of resonance as can be known, this moment, the centre wavelength by these diffraction grating 203 selected laser was:
λ(θ′)＝2d
g·(sinθ
0+sinθ′) (3)
Hence one can see that, in embodiment of the present utility model, can drive described the 3rd collimating lens 209 along the direction translational perpendicular to described benchmark optical axis 211 by tuner 212, changes the centre wavelength of selected laser.
In addition, in embodiment of the present utility model, described tuner 212 also simultaneously the described beam reflector 210 of drive along described benchmark optical axis 211 translations of falling telescopic system, thereby change the external cavity length of semiconductor laser.For example, when above-mentioned beam reflector 210 is driven by tuner 212 and during along the predetermined segment distance of described benchmark optical axis 211 translations of falling telescopic system, if the N point is the above-mentioned diffracted ray of described light wave reflector 210 and the intersection point of light wave reflector 210 of impinging perpendicularly on, then the external cavity length of semiconductor laser this moment is the optical distance between 2 of M, the G and the summation L of the optical distance between G, the N point
Light(θ ').At this moment, then as can be known according to grating equation:
Wherein, N (θ ') expression when the angle of diffraction be θ ' time, the modulus of N longitudinal mode in the resonant cavity of above-mentioned mode jump free continuous tuning semiconductor laser, and N (θ ') is an integer.
Can get according to above-mentioned formula (2) and (4):
And all laser frequencies are all realized mode jump free continuous tuning in order to realize, and then in the tuning process of whole laser frequency, need all to make that the modulus N (θ ') by the selected longitudinal mode of resonant cavity is a constant, promptly satisfy the mode jump free continuous tuning condition:
N (θ ')/N (θ)=1, or | N (θ ')-N (θ) |≤1 (6)
In the laser in actual application environment, because the gain bandwidth of gain media 201 is limited, therefore, in embodiment of the present utility model, only need satisfy above-mentioned mode jump free continuous tuning condition, can guarantee that the semiconductor laser in the utility model can carry out mode jump free continuous tuning in the given frequency range in the above-mentioned finite gain bandwidth.And by above-mentioned formula (5) and (6) as can be known, only need tuning laser wavelength (for example, suitably adjusting diffraction angle ' value by the position of described the 3rd collimating lens 209 of translation) time, suitably adjust the external cavity length L of the semiconductor laser in the formula (5)
Light(θ ') (for example, suitably adjust the value of external cavity length by the position of the described beam reflector 210 of translation), then can satisfy the mode jump free continuous tuning condition in the above-mentioned formula (6), thereby can easily realize all laser frequencies are all realized mode jump free continuous tuning.
Because the change of moving the external cavity length that will cause selected optical maser wavelength and semiconductor laser of the 3rd collimating lens 209 and beam reflector 210, therefore, in the technical solution of the utility model, can (for example carry out driven in synchronism by 212 pairs of described the 3rd collimating lenses 209 of tuner and beam reflector 210, the 3rd collimating lens 209 and beam reflector 210 are moved to predetermined each position respectively, or adjust the position of the 3rd collimating lens 209 and beam reflector 210 in real time), thus make above-mentioned mode jump free continuous tuning condition on bigger frequency tuning range, to be met.
In embodiment of the present utility model, above-mentioned tuner 212 can be any one driving arrangement that can realize above-mentioned synchronous driving mode.Preferable, above-mentioned tuner 212 can be made of two parts, thereby realizes the driven in synchronism to above-mentioned the 3rd collimating lens 209 and beam reflector 210.
Fig. 4 is the structural representation of the tuner among the utility model embodiment one.As shown in Figure 4, in specific embodiment of the utility model, in order to realize the above-mentioned driven in synchronism to the 3rd collimating lens 209 and beam reflector 210, above-mentioned tuner 212 can comprise: first driver part 213 and second driver part 214.Wherein, described the 3rd collimating lens 209 is arranged on described first driver part 213, and described beam reflector 210 is arranged on described second driver part 214.Described first driver part 213 is used for supporting or described the 3rd collimating lens 209 being set, and drive described the 3rd collimating lens 209 in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis 211 that falls telescopic system; And described second driver part 214 is used for supporting or described beam reflector 210 being set, and drives described beam reflector 210 along described benchmark optical axis 211 translations of telescopic system.
In specific embodiment of the utility model, above-mentioned first driver part 213 and second driver part 214 can be that piezoelectric ceramic linear actuating device, stepping motor, microelectromechanical systems (MEMS) or other can be realized the equipment of above-mentioned synchronous driving mode.
For example, when described first driver part 213 and second driver part 214 were the piezoelectric ceramic linear actuating device, described first driver part 213 can comprise: the first mechanical elasticity structure 401 and first driver 402; Described second driver part 214 can comprise: the second mechanical elasticity structure 403 and second driver 404.
Wherein, the described first mechanical elasticity structure 401 is used for being provided with or supporting described the 3rd collimating lens 209, described first driver 402 then is used to drive the described first mechanical elasticity structure 401, thus make described the 3rd collimating lens 209 can be in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis 211 that falls telescopic system.In addition, the described first mechanical elasticity structure 401 also can be used for the actuating force of described first driver 402 synchronously, promptly when the actuating force of first driver 402 passes to the first mechanical elasticity structure 401, the first mechanical elasticity structure 401 will produce corresponding elastic deformation, thereby make the described first mechanical elasticity structure 401 to realize synchronously displacement with described first driver 402.Because above-mentioned displacement is generally and moves back and forth; therefore the elastic deformation that produced of the above-mentioned first mechanical elasticity structure 401 will guarantee that the described first mechanical elasticity structure 401 can follow the actuating force (or displacement) of described first driver 402 and be synchronized with the movement; thereby can protect described the 3rd collimating lens 209, and make that moving of described the 3rd collimating lens 209 is more steady.
The described second mechanical elasticity structure 403 is used for being provided with or supporting described beam reflector 210, described second driver 404 then is used to drive the described second mechanical elasticity structure 403, thereby makes that described beam reflector 210 can be along described benchmark optical axis 211 translations of telescopic system.In addition, the described second mechanical elasticity structure 403 also can be used for the actuating force of described second driver 404 synchronously, thereby protects described beam reflector 210, and makes that moving of described beam reflector 210 is more steady.
In addition, above-mentioned first driver 402 and second driver 404 can be piezoelectric ceramic actuators; The first above-mentioned mechanical elasticity structure 401 and the second mechanical elasticity structure 403 can be the elastic connection structures of making by after wired cutting or the processing of other method.
Hence one can see that, in embodiment of the present utility model, after the distance certain of above-mentioned the 3rd collimating lens 209 edge in the light path plane at diffracted ray place, will change the centre wavelength of the output laser of mode jump free continuous tuning semiconductor laser perpendicular to the direction translational of benchmark optical axis 211; And when above-mentioned beam reflector 210 after the certain distance of described benchmark optical axis 211 translations, then will change the external cavity length of mode jump free continuous tuning semiconductor laser.Therefore, in the technical solution of the utility model, can be in advance or in real time the position of described the 3rd collimating lens 209 and beam reflector 210 is synchronously driven, regulate or be provided with, thereby requirement that can be tuning according to laser frequency, carry out design flexible, so that in the tuning process of whole laser frequency, modulus by the selected longitudinal mode of resonant cavity of described mode jump free continuous tuning semiconductor laser is a constant, promptly satisfy the mode jump free continuous tuning condition shown in the formula (6), thereby can realize mode jump free continuous tuning to the output laser frequency, improve frequency tuning stability, and can produce the mode jump free continuous tuning scope that covers whole maximum by the spectral region that diffraction grating produced, thereby simplify the resonator structure of laser, reduce the production cost of described laser.
In addition, in mode jump free continuous tuning semiconductor laser shown in Figure 4, can be used as having of output laser: 1) the formed first output laser of directly exporting by the Difraction surface reflection back of diffraction grating 203 204 of laser; 2) Difraction surface by diffraction grating 203 is diffracted into beam reflector 210, is reflected by beam reflector 210, returns gain media 201 along input path, after amplifying through vibration, and the second output laser of exporting from the rear surface 206 of gain media 201 205.
But, in the above-mentioned first output laser 204 and the second output laser 205, all there is higher relatively spectrum " noise ", this spectrum " noise " is for deriving from the light source spontaneous radiation (SSE in the gain media 201, source spontaneous emission) and amplified spontaneous emission (ASE, amplifiedspontaneous emission).The existence of above-mentioned spectrum " noise " has caused adverse influence for the coherence and the intensity of the laser of being exported.Therefore, in the technical solution of the utility model, also can in mode jump free continuous tuning semiconductor laser shown in Figure 4, add a partially reflecting mirror, be used for the spectrum " noise " (promptly exporting ASE and SSE composition in the laser) of " removing " above-mentioned output laser.
Fig. 5 is the structural representation of mode jump free continuous tuning semiconductor laser among the utility model embodiment two.As shown in Figure 5, mode jump free continuous tuning semiconductor laser in the utility model is except comprising gain media 201, first collimating lens 202, diffraction grating 203, second collimating lens 208, the 3rd collimating lens 209, beam reflector 210 and tuner 212, also comprise a partially reflecting mirror 501 on the light path that is arranged between first collimating lens 202 and the diffraction grating 203, this partially reflecting mirror 501 can be set up or rotate to required arbitrarily angled according to the actual requirements, is used for the spectral noise of filtering output laser.Preferable, this partially reflecting mirror 501 can be the spatial filter of spectroscope or other form.Because the wavelength of described spectrum " noise " is different from the optical maser wavelength of being exported, on spatial distribution, above-mentioned spectrum " noise " can be expelled or be departed from the light path of described output laser by the diffraction of diffraction grating 203.Therefore, can be by inserting the above-mentioned spectrum " noise " in next thoroughly " removing " the described output laser of above-mentioned partially reflecting mirror (for example, spectroscope or spatial filter).
In embodiment of the present utility model, above-mentioned partially reflecting mirror 501 is exported respectively after the laser by this partially reflecting mirror 501 can being divided into two bundle laser, beam of laser wherein is the 3rd output laser 502, because " removings " of above-mentioned partially reflecting mirror 501 effect, thereby make and no longer comprise above-mentioned spectrum " noise " (promptly the 3rd export in the laser 502 do not comprise ASE and SSE composition) in the 3rd output laser 502; Another Shu Jiguang is the 4th output laser 503, the 4th output laser 503 is traditional tunable laser bundle, wherein still comprise above-mentioned spectrum " noise " (promptly still comprising ASE and SSE composition in the 4th output laser 503), and opposite with the direction of above-mentioned the 3rd output laser 502.Therefore, above-mentioned partially reflecting mirror 501 can be used for producing the 4th output laser 503 and filtering the 3rd output laser 502 of spectral noise.
By mode jump free continuous tuning semiconductor laser as shown in Figure 5, we (are for example obtaining traditional tunable laser bundle, output laser 204,205,503 etc.) time, (for example can also obtain to remove spectrum " noise " laser beam (promptly not comprising ASE and SSE composition), that have high coherence, high spectral purity, the 3rd output laser 502), thereby improved the performance of above-mentioned mode jump free continuous tuning semiconductor laser, expanded the range of application of above-mentioned mode jump free continuous tuning semiconductor laser effectively.
In addition, in embodiment of the present utility model, can realize coupling with optical fiber better in order to make above-mentioned mode jump free continuous tuning semiconductor laser, can also comprise a fiber optic collimator device 510 as shown in Figure 5 in the above-mentioned mode jump free continuous tuning semiconductor laser, this fiber optic collimator device 510 can be used for a branch of at least output laser coupled with above-mentioned laser in required optical fiber 520.Below, we will be that the second output laser 205 is example with described output laser, and the technical solution of the utility model is introduced.
This fiber optic collimator device 510 comprises: light beam harvester 511, optical isolator 512 and calibration lens 513.Wherein, light beam harvester 511 is used to gather the second output laser 205 from rear surface 206 outputs of above-mentioned gain media 201, and the second output laser 205 that will collect is transported to optical isolator 512; Described optical isolator 512 is used to prevent the interference of external feedback light, and realizes the unidirectional output of the described second output laser 205; Described calibration lens 513 are used for the second output laser 205 of described optical isolator 512 outputs is collimated, and make the described second output laser 205 become parallel laser beam; Perhaps be used for the second output laser 205 of described optical isolator 512 outputs is focused on, make the described second output laser 205 be coupled in the corresponding optical fiber 520.
In addition, on the direction of the output laser 204,503 of above-mentioned tunable grating external-cavity semiconductor laser or 502, also can use above-mentioned fiber optic collimator device 510 respectively, thus with above-mentioned output laser coupled in required optical fiber.
In the technical solution of the utility model, also provide another mode jump free continuous tuning semiconductor laser.Fig. 6 is the structural representation of mode jump free continuous tuning semiconductor laser among the utility model embodiment three.As shown in Figure 6, mode jump free continuous tuning semiconductor laser among the utility model embodiment also comprises a smallcolumn diaphragm 601 except comprising gain media 201, first collimating lens 202, diffraction grating 203, second collimating lens 208, the 3rd collimating lens 209, beam reflector 210 and tuner 212.Described smallcolumn diaphragm 601 is arranged on the common focal plane of described second collimating lens 208 and the 3rd collimating lens 209, and the logical light center of described smallcolumn diaphragm 601 overlaps with the lens centre of the 3rd collimating lens 209, is used to strengthen to exporting the frequency-selecting of laser single longitudinal mode.Therefore, in embodiment of the present utility model, described smallcolumn diaphragm 601 is provided with manhole, or is provided with logical optical slits, perhaps is provided with other limit electro-optical device.Wherein, when smallcolumn diaphragm was provided with logical optical slits, the bearing of trend of described logical optical slits was perpendicular to the translation direction of described the 3rd collimating lens 209.In addition, in embodiment of the present utility model, described smallcolumn diaphragm 601 also can all be arranged on described first driver part 213 with described the 3rd collimating lens 209.
Because described smallcolumn diaphragm 601 is provided with limit electro-optical devices such as the through hole of solid shape or slit, therefore will only allow to incide on described the 3rd collimating lens 209 and the beam reflector 210 from the diffracted ray of predetermined angular or position incident, and reflected by beam reflector 210 and return in the gain media 201 along input path, thereby can be so that the laser that mode jump free continuous tuning semiconductor laser is exported has predetermined frequency and the longitudinal mode with predetermined modulus, to realize single longitudinal mode laser output.
In addition, in embodiment of the present utility model, also can further comprise aforesaid partially reflecting mirror 501 and/or fiber optic collimator device 510 in the mode jump free continuous tuning semiconductor laser shown in Figure 6.Concrete implementation can not repeat them here with reference to mode jump free continuous tuning semiconductor laser shown in Figure 5.
In summary, in the technical solution of the utility model, provide the mode jump free continuous tuning semiconductor laser of various ways.By the mode jump free continuous tuning semiconductor laser of the said structure compactness that is provided among the utility model embodiment is provided, can realize mode jump free continuous tuning to laser frequency, improve frequency tuning stability, and can reduce production costs, improve the sweep speed and the tuned speed of laser, therefore thereby make above-mentioned continuous mode-hop-free tunable grating external-cavity diode laser have bigger mode jump free continuous tuning ability, can be widely used in that laser absorption spectrum is measured and such as atomic clock, in the spectrum sensors such as laser cooling/laser trap and biochemical analysis device.
In addition, because the mode jump free continuous tuning semiconductor laser that is provided in the technical solution of the utility model belongs to the tunable grating external-cavity semiconductor laser of Littman-Metcalf type, therefore very compactness and form are simple for the cavity resonator structure of laser, thereby can realize simplifying very much and manufacture process cheaply, and have cost low, can batch process, advantage such as high stability and compact conformation.
The above is preferred embodiment of the present utility model only, is not to be used to limit protection range of the present utility model.All within spirit of the present utility model and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (16)
1. a mode jump free continuous tuning semiconductor laser is characterized in that, this laser comprises: gain media, first collimating lens, diffraction grating, second collimating lens, the 3rd collimating lens, beam reflector and tuner;
The coherent beam of described gain media output is collimated light beam through becoming to be calibrated to behind described first collimating lens, described collimated light beam by described diffraction grating diffraction after, the part diffracted beam is output as the first output laser; After another part diffracted beam impinges perpendicularly on described beam reflector through the telescopic system of being made up of described second collimating lens and described the 3rd collimating lens, reflected by described beam reflector and be back in the described gain media along former input path; When the described light beam that is back to described gain media through the amplification of described gain media and when meeting or exceeding predefined laser oscillation threshold, a described part that is back to the light beam of described gain media is output as the rear surface of the second output laser via described gain media; The described remainder that is back to the light beam of described gain media will be amplified and be outputed to described diffraction grating and described beam reflector once more after the reflection of the rear surface of described gain media, and will be back to the rear surface of described gain media after the described beam reflector reflection once more along input path;
Wherein, described the 3rd collimating lens and beam reflector are arranged on the described tuner;
Described tuner, be used to drive described the 3rd collimating lens in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis that falls telescopic system, and drive described beam reflector simultaneously along the described benchmark optical axis translation of telescopic system, to realize mode jump free continuous tuning to the laser frequency of being exported.
2. laser according to claim 1 is characterized in that, described tuner comprises: first driver part and second driver part; Wherein,
Described first driver part is used for supporting or described the 3rd collimating lens being set, and drive described the 3rd collimating lens in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis that falls telescopic system;
Described second driver part is used for supporting or described beam reflector being set, and drives described beam reflector along the described benchmark optical axis translation of telescopic system.
3. laser according to claim 2 is characterized in that,
Described first driver part comprises: the first mechanical elasticity structure and first driver;
The described first mechanical elasticity structure is used for being provided with or supporting described the 3rd collimating lens;
Described first driver is used to drive the described first mechanical elasticity structure, make described the 3rd collimating lens in the light path plane at diffracted ray place along direction translational perpendicular to the described benchmark optical axis that falls telescopic system;
Described second driver part comprises: the second mechanical elasticity structure and second driver;
The described second mechanical elasticity structure is used for being provided with or supporting described beam reflector;
Described second driver is used to drive the described second mechanical elasticity structure, makes described beam reflector along the described benchmark optical axis translation of telescopic system.
4. laser according to claim 3 is characterized in that,
The described first mechanical elasticity structure also is used for the actuating force of described first driver synchronously;
The described second mechanical elasticity structure also is used for the actuating force of described second driver synchronously.
5. laser according to claim 3 is characterized in that,
Described first driver and second driver are piezoelectric ceramic actuator;
The described first mechanical elasticity structure and the second mechanical elasticity structure are: by wired elastic connection structure that is cut into.
6. laser according to claim 2 is characterized in that, described first driver part and second driver part are: piezoelectric ceramic linear actuating device, stepping motor or microelectromechanical systems.
7. laser according to claim 1 is characterized in that, described laser also comprises: be arranged at the smallcolumn diaphragm on the common focal plane of described second collimating lens and the 3rd collimating lens; The logical light center of described smallcolumn diaphragm overlaps with the lens centre of described the 3rd collimating lens;
Described smallcolumn diaphragm is used to strengthen to exporting the frequency-selecting of laser single longitudinal mode.
8. laser according to claim 7 is characterized in that:
Described smallcolumn diaphragm is provided with manhole or logical optical slits.
9. according to claim 1 or 7 described lasers, it is characterized in that described laser also comprises: be arranged at the partially reflecting mirror on the light path between described first collimating lens and the diffraction grating;
Described partially reflecting mirror has been used to produce the 4th output laser and filtering the 3rd of spectral noise and has exported laser.
10. laser according to claim 9 is characterized in that:
Described partially reflecting mirror is spectroscope or spatial filter.
11. laser according to claim 9 is characterized in that, described laser also comprises: the fiber optic collimator device;
Described fiber optic collimator device is used for a branch of at least output laser coupled with described laser to required required optical fiber.
12. laser according to claim 11 is characterized in that, described fiber optic collimator device comprises: light beam harvester, optical isolator and calibration lens; Wherein,
Described light beam harvester is used to gather described output laser, and the output laser that will collect is transported to optical isolator;
Described optical isolator is used to prevent the interference of external feedback light, and realizes the unidirectional output of described output laser;
Described calibration lens, the output laser that is used for described optical isolator is exported collimates, and makes described output laser become parallel laser beam; The output laser that perhaps is used for described optical isolator is exported focuses on, and makes the output laser of described output be coupled in the required optical fiber.
13. laser according to claim 1 is characterized in that,
Described gain media is: semiconductor laser diode, semiconductor laser diode array or semiconductor laser diode emitter chip.
14. laser according to claim 1 is characterized in that,
Described beam reflector is: plane mirror or accurate right angle optical prism.
15. laser according to claim 1 is characterized in that, described second collimating lens and the 3rd collimating lens are: optical spherical lens, optical cylindrical lens or optical holographic lens.
16. laser according to claim 1 is characterized in that:
The rear surface of described gain media is partially reflecting mirror or total reflective mirror.
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Cited By (8)
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| CN101826701A (en) * | 2010-05-06 | 2010-09-08 | 山东远普光学股份有限公司 | Mode jump free continuous tuning semiconductor laser |
| CN102253492A (en) * | 2011-06-24 | 2011-11-23 | 南京英田光学工程有限公司 | Laser emission optical system easily coupled with laser-optical fiber combination and provided with adjustable beam divergence angle |
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| CN104143763A (en) * | 2014-08-21 | 2014-11-12 | 中国工程物理研究院应用电子学研究所 | Diode laser spectrum synthesis optical system capable of suppressing interlocking mode |
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| CN110085344B (en) * | 2019-05-14 | 2020-07-03 | 长春理工大学 | Microstructure light beam regulation and control system of confocal optical laser trap |
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