CN201757305U - 一种led灯 - Google Patents

一种led灯 Download PDF

Info

Publication number
CN201757305U
CN201757305U CN2010202732088U CN201020273208U CN201757305U CN 201757305 U CN201757305 U CN 201757305U CN 2010202732088 U CN2010202732088 U CN 2010202732088U CN 201020273208 U CN201020273208 U CN 201020273208U CN 201757305 U CN201757305 U CN 201757305U
Authority
CN
China
Prior art keywords
silicon
wafer
led
led wafer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2010202732088U
Other languages
English (en)
Inventor
张日光
林胜
蒋德森
张庆豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NINGBO SUNPU OPTO CO., LTD.
Original Assignee
NINGBO SUNPU-OPTO SEMICONDUCTOR Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NINGBO SUNPU-OPTO SEMICONDUCTOR Co Ltd filed Critical NINGBO SUNPU-OPTO SEMICONDUCTOR Co Ltd
Priority to CN2010202732088U priority Critical patent/CN201757305U/zh
Application granted granted Critical
Publication of CN201757305U publication Critical patent/CN201757305U/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Landscapes

  • Led Device Packages (AREA)

Abstract

本实用新型涉及一种LED灯,包括铺有引线电路的基座,设置在基座上并与引线电路电连接的LED晶片,LED晶片上涂敷有荧光粉层,包裹在LED晶片及荧光粉层外的基座上封装有硅胶层,其特征在于:所述基座包括由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板,所述引线电路铺设在由硅制成的上层基板上,并且所述LED晶片也是固化在由硅制成的上层基板上。与现有技术相比,本实用新型的优点在于:晶片与硅的膨胀系数差不多匹配度比金属要好很多,硅片也具有良好的导热性,可以将晶片的热量散掉。

Description

一种LED灯
技术领域
本实用新型涉及一种LED灯。
背景技术
LED(Light Emitting Diode,简称LED,中文名为发光二极管)灯被称为第四代照明光源或绿色光源,具有节能、环保、体积小、可靠性高等特点,广泛应用于各种指示、显示、装饰、背光源、普通照明和城市夜景等领域。随着LED晶片的整体水平的不断提高,LED灯整体光效不断提升,使得其照明领域的应用不断得以扩大。
目前大功率LED灯的制作趋向是功率做高体积做小。但是现有的LED灯,特别是大功率LED灯,其封装LED晶片的基座一般是金属制成,虽然金属基座具有极好的散热性,但是金属基座的膨胀系数高,化学性质不太稳定,长期使用过程中,与LED晶片匹配度不高。
实用新型内容
本实用新型所要解决的技术问题是针对上述现有技术提供一种体积小、导热性好、与LED晶片匹配度高的、整体性能稳定的大功率LED灯。
本实用新型解决上述技术问题所采用的技术方案为:该LED灯,包括铺有引线电路的基座,设置在基座上并与引线电路电连接的LED晶片,LED晶片上涂敷有荧光粉层,包裹在LED晶片及荧光粉层外的基座上封装有硅胶层,其特征在于:所述基座包括由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板,所述引线电路铺设在由硅制成的上层基板上,并且所述LED晶片也是固化在由硅制成的上层基板上。
硅的特性:化学性质非常稳定,在常温下,除氟化氢以外,很难与其他物质发生反应。低膨胀系数与LED晶片相匹配。硅的比热700J/(kg·K),电导率2.52×10-4/(米欧姆),热导率148W/(m·K)。
铝硅合金的特性:铝硅合金结合了铝和硅两者的特性以质轻、耐磨、耐压、低膨胀系数和高耐蚀性能等特点。硅改善合金的流动性,降低热裂倾向,减少疏松,提高气密性,具有中等的强度和硬度。
与现有技术相比,本实用新型的优点在于:
1、将基座由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板制成,硅和铝硅合金两者膨胀系数差不多,都有良好的导热性,由于硅比较脆所以在硅做在铝硅合金上不容易碎。
2、LED晶片固定在硅片上,晶片与硅的膨胀系数差不多匹配度比金属要好很多。硅片也具有良好的导热性,可以将晶片的热量散掉。
3、LED晶片固晶的位置与晶片尺寸相匹配点完荧光粉后能有效的改善光斑。
4、体积较小。
附图说明
图1为本实用新型实施例中LED灯的结构示意图。
具体实施方式
以下结合附图实施例对本实用新型作进一步详细描述。
请参见图1所示的LED灯,其包括由硅铝合金制成的底层基板1和固定在底层基板上由硅制成的上层基板2,上层基板2上铺有引线电路3,引线电路3中的引线可以采用镀金线或镀银线,各引线之间的沟槽区域即用来铺设LED晶片4,LED晶片4通过金线5与引线电路电连接,LED晶片4上涂敷有荧光粉层6,包裹在LED晶片4及荧光粉层6外的基座上封装有硅胶层7。

Claims (1)

1.一种LED灯,包括铺有引线电路的基座,设置在基座上并与引线电路电连接的LED晶片,LED晶片上涂敷有荧光粉层,包裹在LED晶片及荧光粉层外的基座上封装有硅胶层,其特征在于:所述基座包括由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板,所述引线电路铺设在由硅制成的上层基板上,并且所述LED晶片也是固化在由硅制成的上层基板上。
CN2010202732088U 2010-07-22 2010-07-22 一种led灯 Expired - Lifetime CN201757305U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010202732088U CN201757305U (zh) 2010-07-22 2010-07-22 一种led灯

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010202732088U CN201757305U (zh) 2010-07-22 2010-07-22 一种led灯

Publications (1)

Publication Number Publication Date
CN201757305U true CN201757305U (zh) 2011-03-09

Family

ID=43644580

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010202732088U Expired - Lifetime CN201757305U (zh) 2010-07-22 2010-07-22 一种led灯

Country Status (1)

Country Link
CN (1) CN201757305U (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185094A (zh) * 2011-04-08 2011-09-14 同辉电子科技股份有限公司 氮化镓基led用复合金属基板
CN102832318A (zh) * 2012-08-27 2012-12-19 苏州金科信汇光电科技有限公司 碟型集成式覆晶led光源及制备方法
CN105257994A (zh) * 2015-11-16 2016-01-20 江西华柏节能照明科技协同创新有限公司 提高光引擎光效的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185094A (zh) * 2011-04-08 2011-09-14 同辉电子科技股份有限公司 氮化镓基led用复合金属基板
CN102832318A (zh) * 2012-08-27 2012-12-19 苏州金科信汇光电科技有限公司 碟型集成式覆晶led光源及制备方法
CN105257994A (zh) * 2015-11-16 2016-01-20 江西华柏节能照明科技协同创新有限公司 提高光引擎光效的方法

Similar Documents

Publication Publication Date Title
CN101666433B (zh) 利用室温液态金属导热的大功率led光源
CN102270725A (zh) 发光二极管封装结构
CN201741721U (zh) 板上芯片发光二极管结构
CN201956388U (zh) 一种基于液态金属基底的软性连接的led装置
CN101984510A (zh) 基于液态金属基底的软性连接的led装置
CN103775858B (zh) 芯片倒装于透明陶瓷管的4π出光LED发光管及照明灯
CN201757305U (zh) 一种led灯
CN201715304U (zh) 一种基于液态金属散热的螺纹连接结构的大功率led光源
CN204029855U (zh) 一种led灯
CN203309836U (zh) 一种led光源、背光源、液晶显示装置
CN201502898U (zh) 一种利用室温液态金属导热的大功率led光源
CN203192836U (zh) 集成led光源封装支架
CN209016088U (zh) 一种高功率密度cob器件
CN201893378U (zh) 一种led散热封装结构
CN201434352Y (zh) 发光二极管封装结构及应用该结构的灯条
CN103236492B (zh) 专用于液体照明/装饰的led封装结构及封装方法
CN101872826B (zh) 基于液态金属散热的螺纹连接结构的大功率led光源
CN2645244Y (zh) 一种大功率发光二极管(led)器件
CN101093828A (zh) 紧凑型大功率发光二极管的封装结构
CN102694108A (zh) 一种大功率led封装结构
CN202487666U (zh) 大功率led的封装结构
CN201748246U (zh) 多芯片大功率led光源
CN204303867U (zh) 一种芯片与荧光体分离式热管理结构
CN207938645U (zh) 陶瓷白光贴附式led光源
CN208240726U (zh) 一种具有透明胶层的led发光光源

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 315040, Xinhui Road, national hi tech Zone, Zhejiang, Ningbo, 150

Patentee after: NINGBO SUNPU OPTO CO., LTD.

Address before: 315040, Xinhui Road, national hi tech Zone, Zhejiang, Ningbo, 150

Patentee before: Ningbo Sunpu-opto Semiconductor Co., Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20110309