CN201757305U - 一种led灯 - Google Patents

一种led灯 Download PDF

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Publication number
CN201757305U
CN201757305U CN2010202732088U CN201020273208U CN201757305U CN 201757305 U CN201757305 U CN 201757305U CN 2010202732088 U CN2010202732088 U CN 2010202732088U CN 201020273208 U CN201020273208 U CN 201020273208U CN 201757305 U CN201757305 U CN 201757305U
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China
Prior art keywords
silicon
wafer
led
led wafer
layer
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Expired - Lifetime
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CN2010202732088U
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English (en)
Inventor
张日光
林胜
蒋德森
张庆豪
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NINGBO SUNPU OPTO CO., LTD.
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NINGBO SUNPU-OPTO SEMICONDUCTOR Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

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  • Led Device Packages (AREA)

Abstract

本实用新型涉及一种LED灯,包括铺有引线电路的基座,设置在基座上并与引线电路电连接的LED晶片,LED晶片上涂敷有荧光粉层,包裹在LED晶片及荧光粉层外的基座上封装有硅胶层,其特征在于:所述基座包括由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板,所述引线电路铺设在由硅制成的上层基板上,并且所述LED晶片也是固化在由硅制成的上层基板上。与现有技术相比,本实用新型的优点在于:晶片与硅的膨胀系数差不多匹配度比金属要好很多,硅片也具有良好的导热性,可以将晶片的热量散掉。

Description

一种LED灯
技术领域
本实用新型涉及一种LED灯。
背景技术
LED(Light Emitting Diode,简称LED,中文名为发光二极管)灯被称为第四代照明光源或绿色光源,具有节能、环保、体积小、可靠性高等特点,广泛应用于各种指示、显示、装饰、背光源、普通照明和城市夜景等领域。随着LED晶片的整体水平的不断提高,LED灯整体光效不断提升,使得其照明领域的应用不断得以扩大。
目前大功率LED灯的制作趋向是功率做高体积做小。但是现有的LED灯,特别是大功率LED灯,其封装LED晶片的基座一般是金属制成,虽然金属基座具有极好的散热性,但是金属基座的膨胀系数高,化学性质不太稳定,长期使用过程中,与LED晶片匹配度不高。
实用新型内容
本实用新型所要解决的技术问题是针对上述现有技术提供一种体积小、导热性好、与LED晶片匹配度高的、整体性能稳定的大功率LED灯。
本实用新型解决上述技术问题所采用的技术方案为:该LED灯,包括铺有引线电路的基座,设置在基座上并与引线电路电连接的LED晶片,LED晶片上涂敷有荧光粉层,包裹在LED晶片及荧光粉层外的基座上封装有硅胶层,其特征在于:所述基座包括由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板,所述引线电路铺设在由硅制成的上层基板上,并且所述LED晶片也是固化在由硅制成的上层基板上。
硅的特性:化学性质非常稳定,在常温下,除氟化氢以外,很难与其他物质发生反应。低膨胀系数与LED晶片相匹配。硅的比热700J/(kg·K),电导率2.52×10-4/(米欧姆),热导率148W/(m·K)。
铝硅合金的特性:铝硅合金结合了铝和硅两者的特性以质轻、耐磨、耐压、低膨胀系数和高耐蚀性能等特点。硅改善合金的流动性,降低热裂倾向,减少疏松,提高气密性,具有中等的强度和硬度。
与现有技术相比,本实用新型的优点在于:
1、将基座由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板制成,硅和铝硅合金两者膨胀系数差不多,都有良好的导热性,由于硅比较脆所以在硅做在铝硅合金上不容易碎。
2、LED晶片固定在硅片上,晶片与硅的膨胀系数差不多匹配度比金属要好很多。硅片也具有良好的导热性,可以将晶片的热量散掉。
3、LED晶片固晶的位置与晶片尺寸相匹配点完荧光粉后能有效的改善光斑。
4、体积较小。
附图说明
图1为本实用新型实施例中LED灯的结构示意图。
具体实施方式
以下结合附图实施例对本实用新型作进一步详细描述。
请参见图1所示的LED灯,其包括由硅铝合金制成的底层基板1和固定在底层基板上由硅制成的上层基板2,上层基板2上铺有引线电路3,引线电路3中的引线可以采用镀金线或镀银线,各引线之间的沟槽区域即用来铺设LED晶片4,LED晶片4通过金线5与引线电路电连接,LED晶片4上涂敷有荧光粉层6,包裹在LED晶片4及荧光粉层6外的基座上封装有硅胶层7。

Claims (1)

1.一种LED灯,包括铺有引线电路的基座,设置在基座上并与引线电路电连接的LED晶片,LED晶片上涂敷有荧光粉层,包裹在LED晶片及荧光粉层外的基座上封装有硅胶层,其特征在于:所述基座包括由硅铝合金制成的底层基板和固定在底层基板上由硅制成的上层基板,所述引线电路铺设在由硅制成的上层基板上,并且所述LED晶片也是固化在由硅制成的上层基板上。
CN2010202732088U 2010-07-22 2010-07-22 一种led灯 Expired - Lifetime CN201757305U (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185094A (zh) * 2011-04-08 2011-09-14 同辉电子科技股份有限公司 氮化镓基led用复合金属基板
CN102832318A (zh) * 2012-08-27 2012-12-19 苏州金科信汇光电科技有限公司 碟型集成式覆晶led光源及制备方法
CN105257994A (zh) * 2015-11-16 2016-01-20 江西华柏节能照明科技协同创新有限公司 提高光引擎光效的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102185094A (zh) * 2011-04-08 2011-09-14 同辉电子科技股份有限公司 氮化镓基led用复合金属基板
CN102832318A (zh) * 2012-08-27 2012-12-19 苏州金科信汇光电科技有限公司 碟型集成式覆晶led光源及制备方法
CN105257994A (zh) * 2015-11-16 2016-01-20 江西华柏节能照明科技协同创新有限公司 提高光引擎光效的方法

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Address after: 315040, Xinhui Road, national hi tech Zone, Zhejiang, Ningbo, 150

Patentee after: NINGBO SUNPU OPTO CO., LTD.

Address before: 315040, Xinhui Road, national hi tech Zone, Zhejiang, Ningbo, 150

Patentee before: Ningbo Sunpu-opto Semiconductor Co., Ltd.

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CX01 Expiry of patent term

Granted publication date: 20110309