CN201741691U - Darlington transistor capable of clamping - Google Patents
Darlington transistor capable of clamping Download PDFInfo
- Publication number
- CN201741691U CN201741691U CN2010202133325U CN201020213332U CN201741691U CN 201741691 U CN201741691 U CN 201741691U CN 2010202133325 U CN2010202133325 U CN 2010202133325U CN 201020213332 U CN201020213332 U CN 201020213332U CN 201741691 U CN201741691 U CN 201741691U
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- transistor
- darlington transistor
- darlington
- bipolar transistor
- damping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- Amplifiers (AREA)
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Abstract
The utility model relates to a darlington transistor, in particular to a darlington transistor capable of clamping, which belongs to the technical field of a semiconductor transistor. The technical scheme is as follows: the darlington transistor capable of clamping comprises a darlington transistor with damping; a bipolar transistor is arranged between the base pole and the collecting pole of the darlington transistor with damping; the collecting pole of the bipolar transistor is connected with the collecting pole of the darlington transistor with damping; and the emitting pole of the bipolar transistor is connected with the base pole of the darlington transistor with damping. The collecting pole of the bipolar transistor is connected with the collecting pole of the darlington transistor, and the emitting pole of the bipolar transistor is connected with the base pole of the darlington transistor, so the electric-potential clamping of the darlington transistor can be achieved; the voltage stabilizing effect is good; the processing operation is simple and convenient; and the darlington transistor is safe and reliable.
Description
Technical field
The utility model relates to a kind of Darlington transistor, and especially a kind of Darlington transistor with clamp function belongs to the technical field of semiconductor transistor.
Background technology
As everyone knows, when people are not used for circuits such as igniter for automobile, yacht are automatically controlled, Switching Power Supply to common one with the Darlington transistor of clamp function, in case applied voltage surpasses transistorized output voltage or crest voltage in the circuit, especially with inductive load Kickback voltage when very high, this common Darlington transistor is with regard to easy breakdown damage.But if the Darlington transistor of the band clamp function that uses, then the puncture voltage of Darlington transistor is clamped in the certain numerical value scope, and applied voltage just recoils not get on like this, so just can not damage transistor, thereby play good protective action.Simultaneously, Darlington transistor in use can temperature rise and is overheated, and the operating state of machine line will can not depart from too much behind the diode of reed position if added, and can not slide to saturated mode, so reached the effect of stable link performance.
Fig. 1 is the present existing structure that has the Darlington transistor of reed bit function.As shown in Figure 1, the structure of described Darlington transistor comprises the Darlington transistor of a common band damping, and the collector current Ic of described Darlington transistor is generally several amperes, and the voltage Vceo between collector electrode-emitter is generally hundreds of volts.Voltage stabilizing didoe Z-Di in parallel between the collector-base of described Darlington transistor, the anode tap of described voltage stabilizing didoe Z-Di links to each other with the base stage of Darlington transistor, and the cathode terminal of voltage stabilizing didoe Z-Di links to each other with the collector electrode of Darlington transistor.
The Darlington transistor of band reed bit function belongs to the semiconductor transistor category, has preferably in the industry fields such as, Switching Power Supply automatically controlled in auto electric control, yacht motor, flasher power amplifier and uses.The Darlington transistor of band reed bit function plays the role of a nucleus at power unit, but the Darlington transistor of homemade band clamp function owing to the restriction producer that is subjected to the technical matters level is difficult to work it out, has only Fuji's inlet tube on the electronic market in core manufacturing craft.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of Darlington transistor with the reed bit function is provided, and it is simple in structure, and is easily manufactured, and good stability is safe and reliable.
The technical scheme that provides according to the utility model, the described Darlington transistor that has clamp function, comprise the Darlington transistor of being with damping, described base stage and the inter-collector that has the Darlington transistor of damping is provided with bipolar transistor, the collector electrode of described bipolar transistor links to each other with the collector electrode of the Darlington transistor of band damping, and the emitter of bipolar transistor links to each other with the base stage of the Darlington transistor of band damping.
Described bipolar transistor is not more than the corresponding emitter of Darlington transistor of band damping and the magnitude of voltage of inter-collector corresponding to the emitter and the voltage of inter-collector.Described Darlington transistor and the bipolar transistor that has damping all is positioned on the lead frame base plate.The structure of described bipolar transistor is identical with the structure of the Darlington transistor of band damping.
Advantage of the present utility model: utilize the collector electrode of bipolar transistor to link to each other with the collector electrode of Darlington transistor, the emitter of bipolar transistor links to each other with the base stage of Darlington transistor, can reach the function to the current potential clamp of Darlington transistor; Voltage regulation result is good, and process operation is easy, and is safe and reliable.
Description of drawings
Fig. 1 is the existing structural representation that has the Darlington transistor of clamp function.
Fig. 2 is a structural representation of the present utility model.
Fig. 3 is an encapsulating structure schematic diagram of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with concrete drawings and Examples.
As Fig. 2～shown in Figure 3: as described in Darlington transistor be composited by bipolar transistor T2 and bipolar transistor T3, the base stage of bipolar transistor T2 is as the base stage B of Darlington transistor; The collector electrode of bipolar transistor T2 links to each other with the collector electrode of bipolar transistor T3, as the collector electrode C of Darlington transistor; The emitter of bipolar transistor T2 links to each other with the base stage of bipolar transistor T3, and the emitter of bipolar transistor T3 is as the emitter E of Darlington transistor.Bipolar transistor T2 and bipolar transistor T3 are composited and are provided with diode D between the collector electrode C of Darlington transistor and emitter E, the anode tap of described diode D links to each other with the emitter E of Darlington transistor, and the cathode terminal of diode D links to each other with the collector electrode C of Darlington transistor; The collector electrode C of described Darlington transistor and emitter E are as the output of Darlington transistor.Be provided with resistance R 1 and resistance R 2 between the emitter E of the base stage B of described bipolar transistor T2 and bipolar transistor T3, resistance R 1 and resistance R 2 are serially connected between base stage B and emitter E, resistance R 1 links to each other with the base stage of bipolar transistor T3 with the junction of resistance R 2, forms the Darlington transistor 1 of band damping structure.Described resistance R 1 is selected with the resistance of resistance R 2, can select according to actual needs.
Be provided with bipolar transistor T1 between the collector electrode C of the described Darlington transistor 1 that has a damping and base stage B, the collector electrode of described bipolar transistor T1 links to each other with the collector electrode C of the Darlington transistor 1 of band damping; The emitter of bipolar transistor T1 links to each other with the base stage B of the Darlington transistor 1 of band damping, and the base stage of bipolar transistor T1 suspends.The emitter of bipolar transistor T1 links to each other with base stage B, the collector electrode C of the Darlington transistor 1 of being with damping respectively with collector electrode, constitutes the Darlington transistor that has clamp function.The collector electrode of bipolar transistor T1 correspondence and the magnitude of voltage Vce between emitter generally are less than the collector electrode C of Darlington transistor and the voltage Vceo value between emitter E, can be to the effective clamp of voltage Vceo of Darlington transistor 1 of band damping.During use, the collector electrode C of the Darlington transistor 1 of band damping and the voltage Vceo value between emitter E are greater than the magnitude of voltage Vce between bipolar transistor T1 collector electrode and emitter, when using, applied voltage is during greater than the magnitude of voltage Vce between bipolar transistor T1 collector electrode and emitter, the puncture voltage of Darlington transistor will be clamped on the Vce value, applied voltage just rises not get on like this, then can not damage Darlington transistor, thereby reach the effect that has clamp function.The reason of utilizing bipolar transistor T1 to substitute the clamp function of voltage stabilizing didoe Z-Di is, when adopting voltage stabilizing didoe Z-Di to carry out clamp, when voltage stabilizing didoe Z-Di and Darlington transistor encapsulate, need steep operations such as acid, cleaning, encapsulation is complicated, operating difficulties.And if when utilizing bipolar transistor T1 and Darlington transistor to encapsulate, do not need to steep the processing step of acid, cleaning, load, bonding technology are easy to operate.The structure of described bipolar transistor T1 is identical with the structure of bipolar transistor T2, T3, and promptly when bipolar transistor T2, the T3 of the Darlington transistor 1 that constitutes the band damping were the NPN triode, bipolar transistor T1 also was the NPN triode.
As shown in Figure 3, be the encapsulating structure schematic diagram.The described Darlington transistor 1 that has damping all is positioned on the lead frame base plate 3 with bipolar transistor T1, and 2 is the tube core of bipolar transistor T1.The base stage B that will have the Darlington transistor 1 of damping is bonded in B end corresponding on the lead frame base plate 3 with aluminium wire, forms the base stage B of the Darlington transistor of band reed bit function; The emitter E that will have the Darlington transistor 1 of damping is bonded to E end corresponding on the lead frame base plate 3 with aluminium wire, forms the emitter E of the Darlington transistor 1 that has clamp function; The collector electrode that will have the Darlington transistor 1 of damping is sintered to C end corresponding on the lead frame base plate 3 with the scolder load, forms the collector electrode C of the Darlington transistor 1 that has the reed bit function; The emitter of bipolar transistor T1 is bonded to B end corresponding on the lead frame base plate 3 with aluminium wire, the collector electrode of bipolar transistor T1 is sintered to C end corresponding on the lead frame base plate 3 with the scolder load, so just make the base stage B of emitter and the Darlington transistor 1 that has damping of bipolar transistor T1 link together by the pairing B end of lead frame base plate 3, the collector electrode of bipolar transistor T1 is packaged together by lead frame base plate 3 with the collector electrode C that has a Darlington transistor 1 of damping, is connected the structure that has clamp function between the collector electrode C that has realized Darlington transistor 1 and base stage B.
The Darlington transistor 1 of band damping is encapsulated on the lead frame base plate 3 side by side with bipolar transistor T1, realizes its integrated compound internal structure function, replaced the compound chip manufacturing of technology difficulty complexity by interconnector; Utilize common bipolar transistor T1 to substitute voltage stabilizing didoe, technology is simple, and is workable.If adopt the voltage stabilizing didoe encapsulation, then need technology such as corrosion cleanings and make encapsulation be difficult to realization.Described Darlington transistor 1 with the preparation flow of bipolar transistor T1 is: material preparation → load → bonding → glue → plastic packaging → back curing → deflashing → electroplate → cut muscle → test → printing → packing to put in storage.
The a certain type product of Vceo=300～450V with the Darlington transistor 1 of band damping is an example, the clamp experiment that the Darlington transistor 1 of described band damping matches with bipolar transistor T1 is as follows: raw material are prepared the Darlington transistor 1 of band damping, voltage is Vceo=300～450V between the collector electrode C-emitter E of Darlington transistor 1 correspondence of described band damping, the collector current Ic=6A of Darlington transistor 1 correspondence of band damping, DC current gain hFE＞500 (, Ic=4A, Vce1=2V); Prepare bipolar transistor T1, the collector emitter voltage Vce=300～450V of described bipolar transistor T1 correspondence, collector current Ic=4A.The Darlington transistor 1 that will have a damping with bipolar transistor T1 packaged after, do as the experiment in the following table.With Darlington transistor 1 compound being packaged together of the band damping of the bipolar transistor T1 of a Vce=383V and Vceo=438V, described bipolar transistor T1 is as follows with the experiment parameter of the Darlington transistor 1 of band damping:
| Parameter | Test condition | Technical indicator | Measured data |
| Vceo(V) | ?I C＝1mA | 300-450V | 374V |
| Vcbo(V) | ?I C＝0.1mA | 300-450V | 375V |
| Vebo(V) | ?I B＝150mA | ＞6V | 20V |
| Hfe | ?I C＝4，Vce＝2V | ＞500 | 1246 |
| Vces(V) | ?I C＝4，I B＝15mA | ＜1.5V | 0.995V |
| Vbes(V) | ?I C＝4，I B＝15mA | ＜2V | 1.624V |
| Ic(A) | 6A | 8A |
| Pc(W) | 40W | 60W |
From above data as seen, on collector electrode C, the base stage B of the collector electrode of the bipolar transistor T1 correspondence of Vceo=383V and the Darlington transistor 1 of the band damping that emitter is connected respectively to Vceo=438V, the Vceo=374V of the compound Darlington transistor that is packaged into, test shows, can carry out clamp to the current potential of collector electrode C, the base stage B of the Darlington transistor 1 of band damping with bipolar transistor T1.Product collector electrode maximum permissible current Ic=8A after compound, the maximum dissipation power Pc=60W that allows of collector electrode meets and surpasses the product standard index.Simultaneously, this product is carried out the electric current endurance test, it is normal to add the lasting tens of seconds performances of 6A electric current on the Darlington transistor 1 of bipolar transistor T1 and band damping; Product is carried out the high temperature reverse bias pass the test.
The utility model utilizes the collector electrode of bipolar transistor T1 to link to each other with the collector electrode C of the Darlington transistor 1 of band damping, the emitter of bipolar transistor T1 links to each other with the base stage B of Darlington transistor 1 of band damping, can reach the function to the current potential clamp of the Darlington transistor 1 of being with damping; Voltage regulation result is good, and process operation is easy, and is safe and reliable.
Claims (4)
1. Darlington transistor that has clamp function, comprise the Darlington transistor of being with damping, it is characterized in that: described base stage and the inter-collector that has the Darlington transistor of damping is provided with bipolar transistor, the collector electrode of described bipolar transistor links to each other with the collector electrode of the Darlington transistor of band damping, and the emitter of bipolar transistor links to each other with the base stage of the Darlington transistor of band damping.
2. according to the described Darlington transistor that has clamp function of claim 1, it is characterized in that: described bipolar transistor is not more than the corresponding emitter of Darlington transistor of band damping and the magnitude of voltage of inter-collector corresponding to the emitter and the voltage of inter-collector.
3. according to the described Darlington transistor that has the reed bit function of claim 1, it is characterized in that: described Darlington transistor and the bipolar transistor that has damping all is positioned on the lead frame base plate.
4. according to the described Darlington transistor that has clamp function of claim 1, it is characterized in that: the structure of described bipolar transistor is identical with the structure of the Darlington transistor of band damping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202133325U CN201741691U (en) | 2010-05-27 | 2010-05-27 | Darlington transistor capable of clamping |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202133325U CN201741691U (en) | 2010-05-27 | 2010-05-27 | Darlington transistor capable of clamping |
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| Publication Number | Publication Date |
|---|---|
| CN201741691U true CN201741691U (en) | 2011-02-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010202133325U Expired - Fee Related CN201741691U (en) | 2010-05-27 | 2010-05-27 | Darlington transistor capable of clamping |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109765474A (en) * | 2019-01-25 | 2019-05-17 | 无锡固电半导体股份有限公司 | A kind of test method of Darlington transistor parameter |
| WO2021109145A1 (en) * | 2019-12-06 | 2021-06-10 | 辉芒微电子（深圳）有限公司 | Darlington transistor driving circuit, method, and constant current switch power supply |
| CN115000065A (en) * | 2022-06-16 | 2022-09-02 | 锦州辽晶电子科技有限公司 | Double-layer silicon epitaxial Darlington transistor chip with clamping function and manufacturing method thereof |
-
2010
- 2010-05-27 CN CN2010202133325U patent/CN201741691U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109765474A (en) * | 2019-01-25 | 2019-05-17 | 无锡固电半导体股份有限公司 | A kind of test method of Darlington transistor parameter |
| WO2021109145A1 (en) * | 2019-12-06 | 2021-06-10 | 辉芒微电子（深圳）有限公司 | Darlington transistor driving circuit, method, and constant current switch power supply |
| CN115000065A (en) * | 2022-06-16 | 2022-09-02 | 锦州辽晶电子科技有限公司 | Double-layer silicon epitaxial Darlington transistor chip with clamping function and manufacturing method thereof |
| CN115000065B (en) * | 2022-06-16 | 2024-02-09 | 锦州辽晶电子科技股份有限公司 | Double-layer silicon epitaxial Darlington transistor chip with clamping function and manufacturing method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110209 Termination date: 20150527 |
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| EXPY | Termination of patent right or utility model |