CN201741661U - Implanted ion dose detection control device of plasma immersion implanter - Google Patents
Implanted ion dose detection control device of plasma immersion implanter Download PDFInfo
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- CN201741661U CN201741661U CN2010202939929U CN201020293992U CN201741661U CN 201741661 U CN201741661 U CN 201741661U CN 2010202939929 U CN2010202939929 U CN 2010202939929U CN 201020293992 U CN201020293992 U CN 201020293992U CN 201741661 U CN201741661 U CN 201741661U
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- 238000007654 immersion Methods 0.000 title claims abstract description 46
- 238000001514 detection method Methods 0.000 title claims abstract description 39
- 238000002347 injection Methods 0.000 claims abstract description 87
- 239000007924 injection Substances 0.000 claims abstract description 87
- 239000002245 particle Substances 0.000 claims abstract description 24
- 238000003745 diagnosis Methods 0.000 claims abstract description 20
- 238000002513 implantation Methods 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims description 36
- 239000000523 sample Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 32
- 230000008569 process Effects 0.000 abstract description 12
- 238000005468 ion implantation Methods 0.000 abstract description 7
- 238000004364 calculation method Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 66
- 239000000758 substrate Substances 0.000 description 20
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Abstract
The utility model discloses a plasma submergence implanter's implanted ion dosage detection controlling means belongs to microelectronics technical field. The device comprises a diagnosis unit for diagnosing characteristic parameters such as plasma ion density, electron density, plasma potential and plasma electron temperature; an analysis unit for obtaining the particle components and the particle contents of the components in the plasma; the calculating unit is used for calculating injection process parameters according to the plasma characteristic parameters, the particle components in the plasma and the particle content of each component; and the control unit is used for controlling the implantation process of the plasma immersion implanter according to the output signal of the calculation unit and the implantation process parameters. The utility model discloses an implanted ion dosage detection control device of a plasma immersion implanter can overcome the problem of multiple charged ion detection in the existing ion implanted dosage detection; meanwhile, the method can be used for accurately controlling the process flow of ion implantation.
Description
Technical field
The utility model relates to the ion implantation dosage detection control apparatus, particularly relates to a kind of injection ion dose detection control apparatus of plasma immersion implanter.
Background technology
In semiconductor technology, the doping impurity technology of main flow all adopts beamline ion implanters injection technique (IonImplantation, II), this method is to produce plasma by ion source, by mass spectral analysis required ion component is extracted again, ion is accelerated to certain energy and is injected into (as silicon chip) in the semiconductor chip.This method needs complicated mass spectral analysis and scanning means, and injection efficiency is low, complex structure, and cost is high.
Along with further dwindling of integrated circuit characteristic size, ion implantation energy need further be reduced to a kilo electron volt following (inferior KeV), yet line dispersions can occur after ion beam energy reduces, series of negative effects such as uniformity variation, the further reduction of efficient.Thereby (PlasmaImmersion Ion Implantation PIII) avoids above problem to have proposed novel plasma immersion injection technique in recent years.Plasma immersion injects semiconductor chip is placed on the electrode as negative electrode, and adds back bias voltage on this electrode.The gas that introduce to need in injected system work chamber, and system added power source makes the gas build-up of luminance that is introduced into chamber by charging methods such as inductive coupled, capacitive couplings, forms plasma.Owing on negative electrode, be added with back bias voltage, near substrate, just have back bias voltage sheath layer like this and exist.Under the high voltage of this sheath layer quickened, the cation in the sheath layer can pass the sheath layer and be injected in the substrate.This method has following advantage:
1. need not from ion source, to extract ion, ion is carried out mass spectral analysis and linear the acceleration, make the structure of injection device greatly simplify, save great amount of cost;
2. this technology adopts sheath layer acceleration mechanism, and injection process is that full wafer injects, and is irrelevant with sizes of substrate, so this technology productive rate is high.
Therefore, the plasma immersion injection is a kind of injection technique of future generation that beamline ion implanters is injected that is hopeful very much to replace.But PIII also faces many technical challenges, and injecting the ion dose Detection ﹠ Controling is one of them.
The method that is used for the dosage detection among the PIII mainly contains bias current method and faraday cup detection method.Ion dose is injected in the current measurement that the bias current method flows through substrate by measurement.When plasma injects, flow through substrate currents
I＝I
ion+I
e+I
se+I
dis+I
si，(1)
I wherein
IonFor injecting ionic current, I
eBe the electric current of electron stream in the plasma to substrate, I
SeBe the electric current that substrate surface emission secondary electron forms, I
DisBe displacement current, I
SiElectric current for the formation of substrate emission secondary ion.If inject the surface density of the ion dose of substrate
Wherein n is for injecting the unit charge amount of ion band, and T is an injection length.Form in five parts of substrate currents I
Dis, I
Si, I
eIgnore (displacement current be can not ignore sometimes, and the bias current method is measured and injected ion dose difficulty more like this) with respect to other parts than I, but the secondary electron electric current I
SeBut than I
IonWant big one to twice even more, and I
SeWith substrate material, bias voltage size or the like factor is correlated with and can't be accurately determined.Form I simultaneously
IonIon not merely only to have ion that a kind of quantity of electric charge also has ionized many times be that n in the formula (2) is not unique, so the ion dose n that the bias current method records
iBe not that PIII is injected into the true ion dose in the substrate, thus cannot be according to n
iControl control PIII technological process.
The detection principle of faraday cup is identical with bias current method essence all to be to measure the injection ion dose by measuring ionic current, bias current method that different is usually with whole objective table as current measurement probe, and the faraday cup has an independent cavity, and it is afterwards just measured that the injection ion enters this chamber.Because the Faraday cup mensuration has one independently to measure displacement current, the secondary current that chamber just can be eliminated to exist in the bias current method by the whole bag of tricks and structural design.But faraday cup detection method still can't solve multiple charged ion problem, so though this method increases than bias current method, it is directly used in injects the ion dose detection among the PIII and control still infeasible.
The utility model content
Detect the problems referred to above that exist at prior art intermediate ion implantation dosage, the utility model provides a kind of injection ion dose detection control apparatus of plasma immersion implanter.Described technical scheme is as follows:
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model comprises:
Diagnosis unit is used to diagnose the plasma characteristics parameter;
Analytic unit is used for obtaining plasma particle component and each component particle content;
With the computing unit that described diagnosis unit is connected with analytic unit, be used for calculating the injection technology parameter according to described plasma characteristics parameter and described plasma particle component and described each component particle content;
With the control unit that described computing unit is connected, be used for according to the output signal of described computing unit and the injection technology of injection technology parameter control plasma immersion implanter.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model, the plasma characteristics parameter of described diagnosis unit diagnosis comprises plasma ion density, electron density, plasma potential and plasma electron temperature.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model, described injection technology parameter is for determining injection technology time and the interior injection ion dose of definite injection technology time under the target implantation dosage.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model, described computing unit comprises injection length computing module and implantation dosage computing module, and described injection length computing module injects the required time of plasma of determining dosage according to utilizing quasi static C hild-Langmuir sheath shelf theory to calculate; Described implantation dosage computing module is according to utilizing quasi static C hild-Langmuir sheath shelf theory to calculate the plasma dosage of determining to inject in the time.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model, described control unit is specially air supply unit, power cell, bias unit and the vacuum unit of control plasma immersion implanter according to the injection technology of the implantation dosage worker signal controlling plasma immersion implanter of the output of described computing unit.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model, described control unit is specially the beginning and the end of the injection technology process of control plasma immersion implanter according to the injection technology of the injection length signal and the injection technology parameter control plasma immersion implanter of the output of described computing unit.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model, described diagnosis unit is by one or more formations in Langmuir (Langmuir) electrostatic probe, ripple diagnostic equipment, the microwave interferometer.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model, described analytic unit adopt mass spectrometer to constitute.
The beneficial effect of the technical scheme that the utility model provides is: the injection ion dose detection control apparatus of plasma immersion implanter of the present utility model can overcome existing ion implantation dosage and detect the problem that exists multiple charged ion to detect; Injection ion dose detection control apparatus of the present utility model can be used for accurately controlling the technological process that ion injects simultaneously.
Description of drawings
Fig. 1 is a plasma immersion injected system schematic diagram of using the injection ion dose detection control apparatus of plasma immersion implanter of the present utility model.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, the utility model execution mode is described in further detail below in conjunction with accompanying drawing.
The injection ion dose detection control apparatus of plasma immersion implanter of the present utility model mainly comprises 4 parts, is respectively diagnosis unit, analytic unit, computing unit and control unit.
Diagnosis unit can adopt one or more formations in Miu Er (Langmuir) electrostatic probe, ripple diagnostic equipment, the microwave interferometer, in the practical application, determines the instrument of selection according to the different needs of data acquisition.Diagnosis unit is used to diagnose the plasma characteristics parameter, comprises parameters such as plasma ion density, electron density, plasma potential and plasma electron temperature.
Analytic unit adopts mass spectrometer to constitute usually, is used for detecting acquisition plasma particle component and each component particle content.
Computing unit is connected respectively with diagnosis unit with analytic unit.Computing unit is adopted available single-chip microcomputer, DSP, ARM or universal cpu and is constituted, be used for basis by the plasma characteristics parameter of diagnosis unit output and plasma particle component and each component particle content of exporting by analytic unit, in conjunction with quasistatic Child-Langmuir equation-Langmuir sheath layer injection model theory, calculate the injection technology parameter.Computing unit comprises injection length computing module and implantation dosage computing module.The injection length computing module is used to diagnose the plasma characteristics parameter according to diagnosis unit, comprise parameters such as plasma ion density, electron density, plasma potential and plasma electron temperature, and particle component and each component particle content in the plasma, utilize quasi static C hild-Langmuir sheath shelf theory to calculate and inject the required time of plasma of determining dosage; And the implantation dosage computing module is used to diagnose the plasma characteristics parameter according to diagnosis unit, comprise parameters such as plasma ion density, electron density, plasma potential and plasma electron temperature, and particle component and each component particle content in the plasma, utilize quasi static C hild-Langmuir sheath shelf theory to calculate the plasma dosage of determining to inject in the time.
The injection technology parameter is injection technology time or the outside interior injection ion dose of the injection technology time of importing under the outside target implantation dosage of importing.
What be connected with described computing unit is control unit, be used for according to the output signal of computing unit and the injection technology of injection technology parameter control plasma immersion implanter, comprise in air supply unit, power cell, bias unit and the vacuum unit of adjusting the plasma immersion implanter unit or plurality of units running parameter, make it reach the ideal technology state.Control unit can adopt single-chip microcomputer, DSP, ARM or universal cpu to constitute.In addition, control unit can also according to the output signal of computing unit and injection technology parameter control plasma immersion implanter injection technology process start from finish.
According to quasi static C hild-Langmuir sheath shelf theory for a kind of ion is had
The thickness of plate shape sheath layer
s
0＝(2ε
0V
0/en
0)
1/2，(3)
ε wherein
0Be hollow dielectric constant, V
0Be the pulsed bias value
Ion in the plate shape sheath layer all injects the required time
T
0≈2.7×2π/ω
pi，(4)
ω wherein
Pi=(e
2n
Pi/ ε
0M
Pi)
1/2Be plasma oscillation frequency
After adding pulsed bias, the expansion of plate shape sheath layer becomes stable Child sheath layer through the long enough time-evolution.This moment the sheath layer thickness
T wherein
eBe the plasma electrons temperature, unit is volt, reaches the time of stable state Child sheath layer
ω wherein
PiBe plasma oscillation frequency, it is expressed as previously mentioned.At time t≤T
cThe time, the sheath layer does not reach stable state, at this moment residing position, sheath layer border
Satisfying pulse width T
p≤ T
cUnder the condition, the ion dose of substrate is injected in single pulse
Dosage herein is surface density.
Injection length
T
im＝N/(f×dose
pulse)，(9)
Wherein N is the doping content that substrate reaches, and f is the pulsed bias frequency.
Implantation dosage
N＝T
im×f×dose
pulse，(10)
T
ImBe injection length.
Work as T
p〉=T
cThe ion dose of substrate is injected in the Shi Danyi pulse
dose
pulse＝n
0[s
c+u
B(T
p-T
c)]
Injection length
T
im＝N/(dose
pulse×f)，(11)
Inject metering
N＝T
im×f×dose
pulse，(12)
All above-mentioned equations are only set up single kind of ion, and have different kinds of ions in plasma, and their carried charge may be all different with quality.Quote equivalent mass M and equivalent charge Q herein.
In multiple mass ion and the plasma system deposited, all ions equivalences are become a quality, equivalent mass M satisfies
In the formula
n
iBe the density of i intermediate ion, Q
iIt is the carried charge of i intermediate ion.
The equivalence electric charge
In the formula
N is total ion concentration, can have plasma diagnosis device to obtain d
iCan obtain or similarly install obtaining by mass spectrometer by analyzing plasma composition.Value c in this pattern (13)
iCan be expressed as
All use formula (13), (14) to replace in all places of using the quality and the quantity of electric charge in the formula (1) to (12).Like this at T
p≤ T
cThe time, when in knowing substrate, needing to inject metering N, can obtain injection length T according to formula (9)
Im, and know the injection ion dose that certain injection length is interior according to formula (10).Thereby work as T
p≤ T
cIn time, can be detected PIII according to formula (9), (10) and injects ion dose and control PIII.Work as T
p〉=T
c, can measure detection of injection ion dose and control PIII among the PIII equally according to formula (11), (12).
Above-mentioned formula (3) to formula (15) can be called multiparticle plasma quasistatic sheath layer model.
The plasma diagnostics unit of the injection ion dose detection control apparatus of plasma immersion implanter of the present utility model promptly is to be used for obtaining the used various plasma parameters of above-mentioned method for detecting dose with the analytic unit of analyzing plasma particle, specifically comprises parameter such as plasma electron density, plasma ion density, plasma potential, plasma electron temperature and the plasma ion kind that obtains according to the analytic unit of analyzing the plasma ion composition and particle proportion etc.The injection ion dose detection control apparatus computing unit of plasma immersion implanter of the present utility model is handled the data of diagnosis unit and analytic unit output, obtains the implantation dosage information in the plasma injection process.The control unit of the injection ion dose detection control apparatus of plasma immersion implanter is according to the operation of each parts of the output signal control system of computing unit: as power source, bias generator, air inlet etc., so that the plasma injection technology reaches best stable state.
Be specifically described below in conjunction with accompanying drawing:
Fig. 1 is the schematic diagram of plasma immersion injected system.Plasma source is an inductive coupled plasma source in the present embodiment, can also be other type according to different demands plasma source herein.Whole plasma immersion injected system 1 has a plasma immersion to inject work chamber 13, and the pedestal 32 that is positioned at chamber is used to semiconductor chip (as silicon chip) to provide support.Back bias voltage power supply 30 is added on the bottom electrode 50, and electrically, bottom electrode 50 links to each other with pedestal 32, thereby can provide bias voltage to substrate.Bottom electrode 50 can move up and down the height of adjusting pedestal and substrate so that make technology reach optimum state.
In the present embodiment, the producing method of plasma 20 is inductive coupled (ICP) mode, and plasma 20 also can be that the capacitive coupled modes produce, and can also be that the hollow cathode mode produces or even the combination in any mode between them produces.During system works, add radio-frequency power for coil 11 by matching network 14, radio-frequency power is provided by radio frequency power source 12, by inductive coupled mode power is coupled to the working gas that is fed by air supply unit 15 in the chambers 13, working gas just can build-up of luminance and form plasma 20 in chamber.Plasma forms the sheath layer near base sheet rack 32, the cation in the sheath layer passes the sheath layer and injects substrate under the back bias voltage that negative bias potential source 30 provides is quickened.Last tail gas is taken away by vacuum unit 70.
The plasma diagnostic unit 40 that is used to detect the plasma characteristics parameter in the present embodiment can be an electrostatic probe, it can be microwave interferometer, also can other plasma diagnostic means or unit, its purpose is to obtain the plasma characteristics parameter, and the analytic unit 60 of analyzing the plasma particle composition is used for obtaining the particle composition and the ratio of plasma.The data information transfer that detecting unit 40 and analytic unit 60 obtain is to the computing unit 80 of system, and computing unit 80 can be made of single-chip microcomputer, digital signal processor (DSP), ARM or general central processing unit (CPU).Computing unit 80 also can be accepted the signal from other unit simultaneously.Information after the information of the input of computing unit processing subsequently also will be handled is exported to control unit 90, simultaneously real-time technological parameter output is shown, control unit can be made of single-chip microcomputer, DSP, ARM or universal cpu, the signal that control unit 90 is sent here according to computing unit 80, control counterpart such as air supply unit 15, power source 12, unit such as bias generator 30, vacuum unit 70 reach optimum state with the adjusting process condition.Control unit 90 and computing unit 80 also can be combined into a unit, and this unit is made of single-chip microcomputer, DSP, ARM or universal cpu, finish the function of aforementioned calculation unit 80 and control unit 90.
Computing unit in the implementation case can be based on formula T
Im=N/ (f * dose
Pulse) obtain under the target metering injection length or according to formula N=T
Im* f * dose
PulseBe injected into the ion dose in the substrate.The predetermined injection length that control unit transmits according to computing unit is controlled the beginning and the end of technological process.
The above only is preferred embodiment of the present utility model, and is in order to restriction the utility model, not all within spirit of the present utility model and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (8)
1. the injection ion dose detection control apparatus of a plasma immersion implanter is characterized in that described device comprises:
Diagnosis unit is used to diagnose the plasma characteristics parameter;
Analytic unit is used for obtaining plasma particle component and each component particle content;
With the computing unit that described diagnosis unit is connected with analytic unit, be used for calculating the injection technology parameter according to described plasma characteristics parameter and described plasma particle component and described each component particle content;
With the control unit that described computing unit is connected, be used for according to the output signal of described computing unit and the injection technology of injection technology parameter control plasma immersion implanter.
2. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1, it is characterized in that the plasma characteristics parameter of described diagnosis unit diagnosis comprises plasma ion density, electron density, plasma potential and plasma electron temperature.
3. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1, it is characterized in that described injection technology parameter is for determining injection technology time and the interior injection ion dose of definite injection technology time under the target implantation dosage.
4. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1, it is characterized in that, described computing unit comprises injection length computing module and implantation dosage computing module, and described injection length computing module injects the required time of plasma of determining dosage according to utilizing quasistatic Child-Langmuir equation-Langmuir sheath shelf theory to calculate; Described implantation dosage computing module is according to utilizing quasistatic Child-Langmuir equation-Langmuir sheath shelf theory to calculate the plasma dosage of determining to inject in the time.
5. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 4, it is characterized in that described control unit is according to the implantation dosage control signal of the output of described computing unit and the injection technology of injection technology parameter control plasma immersion implanter.
6. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 4, it is characterized in that described control unit is according to the injection technology of the injection length signal and the injection technology parameter control plasma immersion implanter of described computing unit output.
7. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1 is characterized in that, described diagnosis unit is made of in Child-Langmuir equation-Langmuir electrostatic probe, ripple diagnostic equipment, the microwave interferometer one or more.
8. the injection ion dose detection control apparatus of plasma immersion implanter according to claim 1 is characterized in that, described analytic unit adopts mass spectrometer to constitute.
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|---|---|---|---|
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102573257A (en) * | 2012-01-11 | 2012-07-11 | 西安电子科技大学 | Electron density control system of large-area uniform plasmas |
| CN103137410A (en) * | 2011-11-30 | 2013-06-05 | 中国科学院微电子研究所 | Embedded type implanter control system based on ARM |
| CN103165378A (en) * | 2011-12-12 | 2013-06-19 | 中国科学院微电子研究所 | Dose detection method used in plasma immersion implantation |
| CN103165489A (en) * | 2011-12-15 | 2013-06-19 | 中国科学院微电子研究所 | PIII process flow control and online dose and uniformity detection device |
| CN103903997A (en) * | 2012-12-24 | 2014-07-02 | 中国科学院微电子研究所 | Method for detecting ion implantation dosage |
| CN103165371B (en) * | 2011-12-12 | 2016-03-02 | 中国科学院微电子研究所 | Dose detection device used in plasma immersion injection |
-
2010
- 2010-08-17 CN CN2010202939929U patent/CN201741661U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137410A (en) * | 2011-11-30 | 2013-06-05 | 中国科学院微电子研究所 | Embedded type implanter control system based on ARM |
| CN103165378A (en) * | 2011-12-12 | 2013-06-19 | 中国科学院微电子研究所 | Dose detection method used in plasma immersion implantation |
| CN103165371B (en) * | 2011-12-12 | 2016-03-02 | 中国科学院微电子研究所 | Dose detection device used in plasma immersion injection |
| CN103165489A (en) * | 2011-12-15 | 2013-06-19 | 中国科学院微电子研究所 | PIII process flow control and online dose and uniformity detection device |
| CN103165489B (en) * | 2011-12-15 | 2015-07-29 | 中国科学院微电子研究所 | PIII process flow control and online dose and uniformity detection device |
| CN102573257A (en) * | 2012-01-11 | 2012-07-11 | 西安电子科技大学 | Electron density control system of large-area uniform plasmas |
| CN103903997A (en) * | 2012-12-24 | 2014-07-02 | 中国科学院微电子研究所 | Method for detecting ion implantation dosage |
| CN103903997B (en) * | 2012-12-24 | 2016-12-28 | 中国科学院微电子研究所 | Method for detecting ion implantation dosage |
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