CN201707928U - Current detection circuit - Google Patents
Current detection circuit Download PDFInfo
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- CN201707928U CN201707928U CN2010202427348U CN201020242734U CN201707928U CN 201707928 U CN201707928 U CN 201707928U CN 2010202427348 U CN2010202427348 U CN 2010202427348U CN 201020242734 U CN201020242734 U CN 201020242734U CN 201707928 U CN201707928 U CN 201707928U
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- current
- effect transistor
- field effect
- detection circuit
- storage unit
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Abstract
A current detection circuit is used for detecting the data storage station of a storage unit, which comprises a detection current input end connected with the storage unit, a reference current end, a first switch element connected with the detection current input end, a second switch element connected with the reference current end, a computing amplifier which is connected with the first switch element and the second switch element, and a comparator which is connected with the first switch element and the second switch element; and the current detection circuit judges whether the storage unit has storage data or not according to the electrical level output by the comparator. The current detection circuit has fast detection speed, lower power consumption and simple structure, and is convenient to use.
Description
Technical field
The utility model relates to a kind of testing circuit, refers to a kind of current detection circuit that is used for the disposable programmable ROM (read-only memory) especially.
Background technology
(Read-Only Memory ROM) is a kind of solid state semiconductor memory that can only read prior institute deposit data to ROM (read-only memory).Institute's deposit data is finished writing before the complete machine of generally packing in advance in it, can only read in the whole working, and can be apace unlike random access memory, rewritten easily.ROM (read-only memory) institute deposit data is stable, and outage back institute deposit data can not change yet, and its structure is simpler, reads more conveniently, thereby is usually used in storing various fixed routines and data.
(One Time Progarmming ROM OTP-ROM) is a kind of in the ROM (read-only memory) to the disposable programmable ROM (read-only memory), and it can only write once.To store data conditions in the storer in order understanding, to be necessary to provide a kind of and can to detect the current detection circuit of whether storing data in the storer, and traditional current detection circuit structure more complicated often.
Summary of the invention
In view of above content, be necessary to provide a kind of current detection circuit that is used for the disposable programmable ROM (read-only memory).
A kind of current detection circuit, be used for detecting the data storage situation of a storage unit, described current detection circuit comprises that one connects the detection current input terminal of described storage unit, one reference current end, one first on-off element that links to each other with described detection current input terminal, the one second switch element that links to each other with described reference current end, one operational amplifier that links to each other with described first on-off element and described second switch element and a comparer that links to each other with described first on-off element and described second switch element, described current detection circuit just judges whether store data in the described storage unit according to the level of described comparer output.
Preferably, described first on-off element is one first field effect transistor, and described second switch element is one second field effect transistor.
Preferably, the drain electrode of described first field effect transistor connects described detection current input terminal, the drain electrode of described second field effect transistor connects described reference current end, described first field effect transistor is connected described operational amplifier jointly with the grid of described second field effect transistor, and described first field effect transistor is connected an earth terminal jointly with the source electrode of described second field effect transistor.
Preferably, one inverting input of described operational amplifier connects a reference voltage terminal, the described detection current input terminal of the common connection of one normal phase input end of described operational amplifier and the drain electrode of described first field effect transistor, an output terminal of described operational amplifier connects the grid of described first field effect transistor and described second field effect transistor.
Preferably, common described detection current input terminal, the described reference current end of the common connection of a normal phase input end of described comparer and the drain electrode of described second field effect transistor of connecting of the normal phase input end of one inverting input of described comparer, the drain electrode of described first field effect transistor and described operational amplifier.
Preferably, if store data in the described storage unit, the size of current of described detection current input terminal is greater than the size of current of described reference current end, and described comparer is exported a low level voltage.
Preferably, if do not store data in the described storage unit, the size of current of described detection current input terminal is less than the size of current of described reference current end, and described comparer is exported a high level voltage.
Relative prior art, the utility model current detection circuit just judges whether store data in the storer according to the level of output, and is simple in structure, easy to use.
Description of drawings
Fig. 1 is the circuit diagram of the utility model current detection circuit better embodiment.
Embodiment
See also Fig. 1, the utility model current detection circuit better embodiment comprises that one detects current input terminal I
DET, a reference current end I
REF, one and this detect current input terminal I
DETFirst on-off element that links to each other, one and this reference current end I
REFThe second switch element, an operational amplifier OPA, a comparator C MP, the reference voltage terminal V that link to each other
REF, an output terminal V
OUTAn and earth terminal GND.Wherein, this detects current input terminal I
DETBe connected with a storage unit of a storer.
In the present embodiment, this first on-off element is one first field effect transistor M1, and this second switch element is one second field effect transistor M2, and the first field effect transistor M1 and the second field effect transistor M2 are N type field effect transistor (NMOS).In other embodiments, on-off element can change to other on-off element or the circuit that can realize said function as required.
The concrete annexation of this circuit is as follows: this detects current input terminal I
DETLink to each other this reference current end I with the drain electrode of this first field effect transistor M1, the normal phase input end of this operational amplifier OPA and the inverting input of this comparator C MP
REFLink to each other with the drain electrode of this second field effect transistor M2 and the normal phase input end of this comparator C MP.This first field effect transistor M1 is connected this earth terminal GND jointly with the source class of this second field effect transistor M2.The inverting input of this operational amplifier OPA connects this reference voltage terminal V
REF, the output terminal of this operational amplifier OPA connects the grid of this first field effect transistor M1 and this second field effect transistor M2.The output terminal of this comparator C MP connects this output terminal V
OUT
This operational amplifier OPA makes drain voltage and this reference voltage terminal V of this first field effect transistor M1
REFVoltage equate, for storage unit provides a suitable voltage bias, the output terminal of this operational amplifier OPA connects the grid of this first field effect transistor M1 and this second field effect transistor M2 simultaneously, make win field effect transistor M1 and the second field effect transistor M2 become mirror, for the first field effect transistor M1 and the second field effect transistor M2 provide suitable voltage bias.This first field effect transistor M1 is used to read this detection current input terminal I
DETSize of current, this second field effect transistor M2 is used to read this reference current end I
REFSize of current.When storing data in the storage unit, then should detect current input terminal I
DETSize of current will be greater than this reference current end I
REFSize of current; When not storing data in the storage unit, then should detect current input terminal I
DETNo current is flow through maybe this detection current input terminal I
DETSize of current less than this reference current end I
REFSize of current.
When this first field effect transistor M1 and this second field effect transistor M2 read this detection current input terminal I
DETSize of current greater than this reference current end I
REFSize of current the time, then the voltage of the inverting input of this comparator C MP is greater than the voltage of normal phase input end, thereby makes the output terminal of this comparator C MP export a low level voltage to this output terminal V
OUTThereby, store data in the storage unit of proof storer; When this first field effect transistor M1 and this second field effect transistor M2 read this detection current input terminal I
DETSize of current less than this reference current end I
REFSize of current the time, then the voltage of the inverting input of this comparator C MP is less than the voltage of normal phase input end, thereby makes the output terminal of this comparator C MP export a high level voltage to this output terminal V
OUTThereby, do not store data in the storage unit of proof storer.
This current detection circuit is according to output terminal V
OUTThe level of output just comes whether to store in the detection of stored device data, and detection speed is very fast, power consumption is lower, and simple in structure, easy to use.
Claims (7)
1. current detection circuit, be used for detecting the data storage situation of a storage unit, it is characterized in that: described current detection circuit comprises that one connects the detection current input terminal of described storage unit, one reference current end, one first on-off element that links to each other with described detection current input terminal, the one second switch element that links to each other with described reference current end, one operational amplifier that links to each other with described first on-off element and described second switch element and a comparer that links to each other with described first on-off element and described second switch element, described current detection circuit just judges whether store data in the described storage unit according to the level of described comparer output.
2. current detection circuit as claimed in claim 1 is characterized in that: described first on-off element is one first field effect transistor, and described second switch element is one second field effect transistor.
3. current detection circuit as claimed in claim 2, it is characterized in that: the drain electrode of described first field effect transistor connects described detection current input terminal, the drain electrode of described second field effect transistor connects described reference current end, described first field effect transistor is connected described operational amplifier jointly with the grid of described second field effect transistor, and described first field effect transistor is connected an earth terminal jointly with the source electrode of described second field effect transistor.
4. current detection circuit as claimed in claim 3, it is characterized in that: an inverting input of described operational amplifier connects a reference voltage terminal, the described detection current input terminal of the common connection of one normal phase input end of described operational amplifier and the drain electrode of described first field effect transistor, an output terminal of described operational amplifier connects the grid of described first field effect transistor and described second field effect transistor.
5. current detection circuit as claimed in claim 4, it is characterized in that: common described detection current input terminal, the described reference current end of the common connection of a normal phase input end of described comparer and the drain electrode of described second field effect transistor of connecting of the normal phase input end of an inverting input of described comparer, the drain electrode of described first field effect transistor and described operational amplifier.
6. current detection circuit as claimed in claim 1 is characterized in that: if store data in the described storage unit, the size of current of described detection current input terminal is greater than the size of current of described reference current end, and described comparer is exported a low level voltage.
7. current detection circuit as claimed in claim 1, it is characterized in that: if do not store data in the described storage unit, the size of current of described detection current input terminal is less than the size of current of described reference current end, and described comparer is exported a high level voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202427348U CN201707928U (en) | 2010-06-30 | 2010-06-30 | Current detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202427348U CN201707928U (en) | 2010-06-30 | 2010-06-30 | Current detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201707928U true CN201707928U (en) | 2011-01-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202427348U Expired - Fee Related CN201707928U (en) | 2010-06-30 | 2010-06-30 | Current detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201707928U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113906506A (en) * | 2019-05-31 | 2022-01-07 | 美光科技公司 | Voltage or current detector for memory component |
-
2010
- 2010-06-30 CN CN2010202427348U patent/CN201707928U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113906506A (en) * | 2019-05-31 | 2022-01-07 | 美光科技公司 | Voltage or current detector for memory component |
| CN113906506B (en) * | 2019-05-31 | 2024-02-23 | 美光科技公司 | Voltage or current detector for memory component |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 610041 Sichuan city of Chengdu province high tech Zone Kyrgyzstan Road 33 block A No. 9 Patentee after: IPGoal Microelectronics (Sichuan) Co., Ltd. Address before: 402 room 7, building 610041, incubator Park, hi tech Zone, Sichuan, Chengdu Patentee before: IPGoal Microelectronics (Sichuan) Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110112 Termination date: 20140630 |
|
| EXPY | Termination of patent right or utility model |