CN201702494U - Overtemperature protection circuit for power semiconductor of inverter welding machine - Google Patents
Overtemperature protection circuit for power semiconductor of inverter welding machine Download PDFInfo
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- CN201702494U CN201702494U CN2010202895653U CN201020289565U CN201702494U CN 201702494 U CN201702494 U CN 201702494U CN 2010202895653 U CN2010202895653 U CN 2010202895653U CN 201020289565 U CN201020289565 U CN 201020289565U CN 201702494 U CN201702494 U CN 201702494U
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Abstract
The utility model discloses an overtemperature protection circuit for a power semiconductor of an inverter welding machine. A temperature sensitive resistor with negative temperature coefficients is adopted to continuously monitor the temperature, and converts temperature measurement into voltage measurement; a comparator combines a divider resistor to reduce by stages till the given current and given voltage are turned off, so that when the temperature of the power semiconductor device is raised, the work load can be reduced stage by stage. The utility model overcomes the disadvantages caused by the traditional overtemperature protection, can effectively protect the power semiconductor device, prolong the service life of the power semiconductor device, and cannot reduce the consistence and the qualification rate of the product when the welding quality is influenced.
Description
Technical field
The utility model relates to the contravariant arc welding machine field; Relate in particular to inverter type welder electric semiconductor overtemperature prote field.
Background technology
The electric semiconductor that the inversion of inverter type welder is at present adopted all can generate heat because of loss at work, causes the electric semiconductor temperature to raise, and this temperature rise is limited, and too high temperature rise meeting damages electric semiconductor.So, contravariant arc welding machine all without exception employing the temperature protection measure.
General temperature protection measure is: the temperature that detects electric semiconductor with a temperature relay; when temperature reaches setting; temperature relay action (disconnecting or closure); this action will be by control circuit board logic circuit turn off the electric welding machine current/voltage is given; make welding machine stop power output; electric semiconductor just quits work, and the temperature of electric semiconductor is reduced.When being lower than setting, temperature relay restores to the original state again, and the logic circuit of control circuit board is opened the electric welding machine current/voltage is given, makes welding machine power output again.Like this, just guaranteed that the power semiconductor device in the electric welding machine can be because of overheated or overtemperature and damage.
Though the said temperature relay can play the effect of overtemperature prote, still have two big shortcomings to exist:
1. present temperature relay operating temperature error is excessive, generally can not be lower than positive and negative 5 degrees centigrade, has a strong impact on the uniformity of final products.
2. the temperature relay that uses at present all works on off state, when temperature reaches the protection setting value, stops output suddenly, and electric semiconductor is cooled off rapidly, and so repeatedly, the power semiconductor device life-span can subtract greatly.
In addition, electric welding machine because of the power semiconductor device temperature reaches when setting value protection, stops output suddenly in welding process, and welding arc extinguishes suddenly, and the welding operator is not free to process, and can produce very big influence by butt welded seam, increases the probability of defective work.
Summary of the invention
Defective at the above prior art; the utility model provides a kind of novel inverter type welder electric semiconductor overtemperature prote circuit; this inverter type welder electric semiconductor overtemperature prote circuit can make power semiconductor device distinguishing live load that progressively reduces when temperature raises; thereby the protection power semiconductor device improves the qualified products probability simultaneously.
The technical solution of the utility model:
The utility model adopts the continuous monitor temperature of thermo-sensitive resistor (NTC device) of negative temperature coefficient, and the temperature amount changed into voltage, reduce until the given voltage of cut-off current in conjunction with the divider resistance segmentation with comparator, make power semiconductor device distinguishing live load that progressively reduces when temperature raises, voltage comparator battle array, given attenuator circuit, error comparison point and calculus controlled adjuster (PID) that its circuit comprises bleeder circuit, is made up of the voltage comparator that can overturn automatically.Described bleeder circuit is by the NTC(negative tempperature coefficient thermistor), resistance and reference pressure stabilization power constitute, the voltage comparator battle array is made up of voltage comparator, negative tempperature coefficient thermistor is made temp probe and is directly closely contacted with the heat sink of electric semiconductor.
Wherein, the electric semiconductor heat sink variations in temperature of described inverter type welder causes that described negative tempperature coefficient thermistor change in resistance causes described bleeder circuit voltage to change then, voltage after bleeder circuit will change is delivered to described voltage comparator battle array and is caused that the voltage comparator in the voltage comparator battle array overturns, and by the described given attenuator circuit given voltage of its electric current of decaying in proportion, the given voltage of the electric current that obtains after the decay is delivered to described error comparison point, simultaneously, the current feedback voltage signal is also delivered to the error comparison point and is compared, error voltage after comparison is regulated by described calculus controlled adjuster and is handled, control electric welding machine output current.
The advantage and the beneficial effect of inverter type welder electric semiconductor overtemperature prote circuit described in the utility model:
The utility model has shielded the drawback that traditional overtemperature prote method is brought:
1. temperature section detects; segmentation reduces output current, has both effectively protected only cause thermal damage of power semiconductor device, also allows power semiconductor device not be in the environment of temperature acute variation; reduce the stress that the difference of the coefficient of expansion is brought, prolong power semiconductor device service life.
2. when electric welding machine temperature in welding process raise, segmentation progressively reduced electric current, and both segmentation progressively reduced the load of power semiconductor device, had effectively protected power semiconductor device, can not influence welding quality because of temperature protection function again.
Description of drawings
Fig. 1. inverter type welder electric semiconductor overtemperature prote method circuit block diagram.
Fig. 2. the inverter type welder electric semiconductor overtemperature prote method circuit diagram that provides for embodiment.
The specific embodiment
The utility model adopts the continuous monitor temperature of thermo-sensitive resistor (NTC device) of negative temperature coefficient, and the temperature amount changed into voltage, reduce until the given voltage of cut-off current in conjunction with the divider resistance segmentation with comparator, make power semiconductor device distinguishing live load that progressively reduces when temperature raises, voltage comparator battle array, given attenuator circuit, error comparison point and calculus controlled adjuster (PID) that its circuit comprises bleeder circuit, is made up of the voltage comparator that can overturn automatically.Described bleeder circuit is by the NTC(negative tempperature coefficient thermistor), resistance and reference pressure stabilization power constitute, the voltage comparator battle array is made up of voltage comparator, negative tempperature coefficient thermistor is made temp probe and is directly closely contacted with the heat sink of electric semiconductor.
In order to more fully understand technical characterictic of the present utility model, below in conjunction with accompanying drawing content of the present utility model is described, following description only is exemplary and indicative, should any restriction not arranged to protection domain of the present utility model.
Embodiment:
Inverter type welder electric semiconductor overtemperature prote circuit theory described in the utility model as shown in Figure 1, NTC device 1, resistance 2 and reference pressure stabilization power VRE5 constitute bleeder circuit, NTC device 1 is made temp probe and is directly closely contacted with the heat sink of electric semiconductor.Electric semiconductor heat sink temperature difference, meeting produces different on the tie point of NTC device 1 and resistance 2, represents the voltage of electric semiconductor temperature, and high more this voltage of temperature is just high more.This voltage is delivered to by voltage comparator 3, voltage comparator 4, the voltage comparator battle array that voltage comparator 5 and voltage comparator 6 are formed.
The reference voltage V RE1 that each comparator in the voltage comparator battle array can set, VRE2, VRE3, VRE4 is last to overturn, and respectively by resistance 7, resistance 8, the given attenuator circuit that resistance 9 and 10 groups of resistance etc. become is the given voltage of decay current in proportion, so that reduce the electric welding machine output current, even the electric welding machine output current reduced to zero.
When electric welding machine carries out welding job on artificial setting welding current value, if the electric semiconductor temperature is lower, NTC device 1 and resistance 2 voltage after partial are lower, and comparator does not all overturn, the given voltage VRE6 of electric current is not attenuated, and the electric welding machine output current keeps the artificial welding current value of setting.
If certain reason makes the power semiconductor device temperature raise, this moment, NTC device 1 and resistance 2 voltage after partial were higher than VRE1, comparator 3 upsets, resistance 7 right-hand member ground connection, the given voltage VRE6 of electric current is by the bleeder circuit dividing potential drop decay of resistance 10 and resistance 7 compositions, and the electric welding machine output current is slightly less than artificial setting welding current value.
If the power semiconductor device temperature is higher again, this moment, NTC device 1 and resistance 2 voltage after partial were higher than VRE2, comparator 4 also overturns, resistance 8 right-hand members are ground connection also, the given voltage VRE6 of electric current is by the bleeder circuit dividing potential drop decay of resistance 10 and resistance 7 and resistance 8 compositions, and the electric welding machine output current is further less than the artificial welding current value of setting.
If it is higher again that the power semiconductor device temperature continues, this moment, NTC device 1 and resistance 2 voltage after partial were higher than VRE3, comparator 5 also overturns, resistance 9 right-hand members are ground connection also, the given voltage VRE6 of electric current is by the bleeder circuit dividing potential drop decay of resistance 10 and resistance 7 and resistance 8 and resistance 9 compositions, and the electric welding machine output current is more further less than the artificial welding current value of setting.
When the power semiconductor device temperature has reached the limit of operating temperature, this moment, NTC device 1 and resistance 2 voltage after partial were higher than VRE4, comparator 6 upsets, resistance 10 lower ends are ground connection also, the given voltage VRE6 of electric current comparator 6 decays to zero, the electric welding machine output current is zero, and electric welding machine is in resting state.
As can be seen, above method is actually the method that situation about raising according to power semiconductor device temperature in the electric welding machine suitably reduces the electric welding machine output current.
Each desired temperature and every section current attenuation value all can rationally be set according to concrete type.
As shown in Figure 2: U1-1, U1-2, U1-3, U1-4 are the voltage rate of exchange devices that constitutes with operational amplifier; V1, V2, V3, V4 are the fixedly comparative voltages of setting.R10, R11, R12 are the given damping resistances of electric current; Rad1 is the given potentiometer of electric current; C is a current feedback voltage input point; D is the given voltage and current feedback voltage of an electric current comparison point, and this signal is to deliver to the error signal that the PID adjuster is done adjusting and amplified.
When electric welding machine carried out welding job on artificial setting welding current value, if the electric semiconductor temperature is lower, the A point voltage after RT1 and the R1 dividing potential drop was lower, U1-1, U1-2, U1-3, the voltage rate of exchange device that operational amplifiers such as U1-4 constitute is output as height, D1, D2, D3, diodes such as D4 end, the given B point voltage of electric current is not attenuated, and the electric welding machine output current keeps the artificial welding current value of setting.
If the electric semiconductor temperature uprises, the A point voltage after RT1 and the R1 dividing potential drop is greater than reference voltage V 1, U1-1 is output as low (U1-2, U1-3, it so is high that U1-4 output is appointed), D1 conducting (D2, D3, D4 appoints right ending), the given B point voltage of electric current decays to R13/R10, and the electric welding machine output current reduces.
If the electric semiconductor temperature continues to uprise, A point voltage after RT1 and the R1 dividing potential drop is greater than reference voltage V 1 and V2, U1-1 and U1-2 are output as low (U1-3, it so is high that U1-4 output is appointed), D1 and D2 conducting (D3, D4 appoints right ending), the given B point voltage of electric current decays to R13/ (R10//R12), and the electric welding machine output current further reduces.
Same continues to uprise as if the electric semiconductor temperature, A point voltage after RT1 and the R1 dividing potential drop is greater than reference voltage V 1, V2 and V3, U1-1, that U1-2 and U1-3 are output as is low (U1-4 output is appointed right in high), D1, D2 and D3 conducting (D4 appoint right by), the given B point voltage of electric current decays to R13/ (R10//R11//R12), and the electric welding machine output current further reduces again.
Limiting case if electric semiconductor temperature height to during the temperature that may suffer damage, the A point voltage after RT1 and the R1 dividing potential drop is greater than reference voltage V 1, V2, V3 and V4, U1-1, U1-2, U1-3 and U1-4 output are low entirely, D1, D2, the whole conductings of D3 and D4.Wherein the conducting of D4 makes that the given B point voltage decay of electric current is zero, and the electric welding machine output current is reduced to zero, and power semiconductor device quits work, and has obtained effective protection.
Claims (4)
1. an inverter type welder electric semiconductor overtemperature prote circuit is characterized in that, comprising: negative tempperature coefficient thermistor, bleeder circuit, by the voltage comparator battle array that the voltage comparator that can overturn is automatically formed, given attenuator circuit, error comparison point and calculus controlled adjuster; Wherein, the electric semiconductor heat sink variations in temperature of described inverter type welder causes that described negative tempperature coefficient thermistor change in resistance causes described bleeder circuit voltage to change then, voltage after bleeder circuit will change is delivered to described voltage comparator battle array and is caused that the voltage comparator in the voltage comparator battle array overturns, and by the described given attenuator circuit given voltage of its electric current of decaying in proportion, the given voltage of the electric current that obtains after the decay is delivered to described error comparison point, simultaneously, the current feedback voltage signal is also delivered to the error comparison point and is compared, error voltage after comparison is regulated by described calculus controlled adjuster and is handled, control electric welding machine output current.
2. inverter type welder electric semiconductor overtemperature prote circuit according to claim 1, it is characterized in that: described bleeder circuit is made of negative tempperature coefficient thermistor, resistance and reference pressure stabilization power.
3. inverter type welder electric semiconductor overtemperature prote circuit according to claim 1 is characterized in that: described negative tempperature coefficient thermistor is made temp probe and is directly closely contacted with the heat sink of electric semiconductor.
4. inverter type welder electric semiconductor overtemperature prote circuit according to claim 1 is characterized in that: described voltage comparator overturns on the reference voltage of setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202895653U CN201702494U (en) | 2010-08-12 | 2010-08-12 | Overtemperature protection circuit for power semiconductor of inverter welding machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202895653U CN201702494U (en) | 2010-08-12 | 2010-08-12 | Overtemperature protection circuit for power semiconductor of inverter welding machine |
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| CN201702494U true CN201702494U (en) | 2011-01-12 |
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| CN2010202895653U Expired - Fee Related CN201702494U (en) | 2010-08-12 | 2010-08-12 | Overtemperature protection circuit for power semiconductor of inverter welding machine |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142818A (en) * | 2011-01-21 | 2011-08-03 | 上海艾为电子技术有限公司 | Class-AB amplifier and over-temperature protection circuit thereof |
| EP2676761A3 (en) * | 2012-06-19 | 2016-11-23 | Robert Bosch Gmbh | Method of monitoring the rest life of a resistance welding device having a semiconductor charged by current during the use of such resistance welding device |
| CN108614484A (en) * | 2018-05-11 | 2018-10-02 | 大族激光科技产业集团股份有限公司 | A kind of electric current burns the control method and its burning ball control system of ball |
| CN109375671A (en) * | 2018-10-17 | 2019-02-22 | 深圳市华星光电半导体显示技术有限公司 | Display and its temperature-sensitive regulate and control module |
-
2010
- 2010-08-12 CN CN2010202895653U patent/CN201702494U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142818A (en) * | 2011-01-21 | 2011-08-03 | 上海艾为电子技术有限公司 | Class-AB amplifier and over-temperature protection circuit thereof |
| CN102142818B (en) * | 2011-01-21 | 2013-05-01 | 上海艾为电子技术有限公司 | Class-AB amplifier and over-temperature protection circuit thereof |
| EP2676761A3 (en) * | 2012-06-19 | 2016-11-23 | Robert Bosch Gmbh | Method of monitoring the rest life of a resistance welding device having a semiconductor charged by current during the use of such resistance welding device |
| CN108614484A (en) * | 2018-05-11 | 2018-10-02 | 大族激光科技产业集团股份有限公司 | A kind of electric current burns the control method and its burning ball control system of ball |
| CN109375671A (en) * | 2018-10-17 | 2019-02-22 | 深圳市华星光电半导体显示技术有限公司 | Display and its temperature-sensitive regulate and control module |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| C56 | Change in the name or address of the patentee | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yang Zhenwen Inventor after: Wu Yuetao Inventor before: Yang Zhenwen |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: YANG ZHENWEN TO: YANG ZHENWEN WU YUETAO |
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| CP01 | Change in the name or title of a patent holder |
Address after: 518001 Guangdong city of Shenzhen province Nanshan District Xili town honghualing Industrial District Three District Building Patentee after: Shenzhen Huayilong Industrial Development Co., Ltd Address before: 518001 Guangdong city of Shenzhen province Nanshan District Xili town honghualing Industrial District Three District Building Patentee before: Shenzhen HuaYiLong Industrial Development Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110112 Termination date: 20190812 |