CN201662590U - Semiconductor-type probe and non-invasive voltage measurement device comprising the same - Google Patents
Semiconductor-type probe and non-invasive voltage measurement device comprising the same Download PDFInfo
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- CN201662590U CN201662590U CN2010201419414U CN201020141941U CN201662590U CN 201662590 U CN201662590 U CN 201662590U CN 2010201419414 U CN2010201419414 U CN 2010201419414U CN 201020141941 U CN201020141941 U CN 201020141941U CN 201662590 U CN201662590 U CN 201662590U
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Abstract
The utility model relates to a semiconductor-type probe and a non-invasive voltage measurement device using the same. The semiconductor-type probe is based on the structural design that an induction component and a sampling component are integrated on the same semiconductor substrate, thus effectively reducing the size and weight of the semiconductor-type probe and facilitating the mass-production, wherein the sampling component is based on a parallel-plate type capacitor structure comprising an oxidation layer, a metal electrode, an insulating layer and a metal electrode, accordingly, the sampling component has the advantages of large electrode area, high sensitivity, large measurement range and good linearity, therefore, the sampling component is suitable for collecting the induced charge generated by the induction component; and the epitaxial layer of the induction component is directly prepared on the semiconductor substrate, the charge in the epitaxial layer is only subjected to the process of re-distribution, so that the response time is short. The non-invasive voltage measurement device of the utility model further comprises a sampling control circuit, a signal processing circuit, a micro-controller, a digital display, a first sampling switch and a second sampling switch.
Description
Technical field
The utility model belongs to the voltage measuring apparatus technical field, particularly relates to the non-intrusion type voltage measuring apparatus that a kind of semi-conductor type is popped one's head in and comprised this probe.
Background technology
The voltage detecting sensor is the indispensable equipment in the power supply-distribution system, and its usable range is wide, usage quantity is many, according to the detection mode difference, roughly can be divided into intrusive mood and detect and two kinds of non-intrusion type detections.
Intrusive mood detects, and is meant that testing circuit needs to build electric signal on distribution loop and draws the loop, by measuring current in loop, voltage or magnetic signal, reaches the purpose that detects the distribution loop voltage signal.Its advantage is that device structure is simple, and shortcoming is directly to contact with detected circuit, and the fault of testing circuit might conduct to circuit-under-test, causes circuit-under-test to break down.
Non-intrusion type detects, and is meant that testing circuit do not contact directly with load equipment on electric and reach the purpose of non-contact detection distribution loop voltage signal.Can not impact even non-intruding monitor breaks down yet, on the one hand get rid of the possibility that causes the circuit-under-test fault, can guarantee the security of measuring on the other hand yet, be adapted at use in the field such as research and production more detected circuit.
Traditional voltage sensor all is the voltage sensor of iron core coil structure, and they utilize electromagnetic induction principle to realize the non-intrusion measurement of voltage, but this method has following defective:
Precision lower, require coil winding very accurate, signal processing requirement is higher;
2. the response time is slow, measurement range is limited, be vulnerable to electromagnetic interference (EMI) simultaneously;
3. volume, weight are bigger.
The utility model content
The purpose of this utility model is to overcome the above-mentioned deficiency of prior art, a kind of semi-conductor type probe is provided, this probe precision height, response are soon, range is wide, volume is little, in light weight and easy batch process, and when large-scale production, can reduce production costs significantly, can be widely used in the voltage detecting in fields such as scientific research and commercial production.
Another one purpose of the present utility model is to provide a kind of non-intrusion type voltage measuring apparatus that comprises this probe.
Above-mentioned purpose of the present utility model is achieved by following technical solution:
A kind of semi-conductor type probe, form by the inductive means and the sample unit that are integrated on the block semiconductor substrate, wherein inductive means by the epitaxial loayer that is grown in Semiconductor substrate upper surface and lower surface, be produced on metal electrode on the epitaxial loayer and the pin on the metal electrode is formed, sample unit is made up of the oxide layer that is successively set on the Semiconductor substrate upper surface, lower metal electrode, insulation course, upper strata metal electrode and pin, and it respectively is provided with a pin on metal electrode and the lower metal electrode at the middle and upper levels.
In above-mentioned semi-conductor type probe, Semiconductor substrate is a kind of in silicon chip, sapphire or the silit; Epitaxial loayer is a P type thick epitaxial layer, and the thickness of epitaxial loayer is 10um～30um.
In above-mentioned semi-conductor type probe, metal electrode, upper strata metal electrode and lower metal electrode are aluminium electrode, gold electrode or titanium electrode, and thickness of electrode is 1.0um～1.5um.
In above-mentioned semi-conductor type probe, insulation course is a polyimide in the sample unit, and thickness is 0.5～1.0um; Thickness of oxide layer is 0.5～1.0um.
A kind of non-intrusion type voltage measuring apparatus that comprises the semi-conductor type probe also comprises controlling of sampling circuit, signal processing circuit, microprocessor, digital indicator, first sampling switch and second sampling switch, wherein:
Controlling of sampling circuit: be connected with second sampling switch with first sampling switch, by controlling the disconnection and the closure of first sampling switch and second sampling switch, realize the voltage sample of semiconductor probe and the output of voltage sample value, and the voltage sample value exported to signal processing circuit, simultaneously first sampling switch and second sampling switch are disconnected and closed status information is exported to microprocessor;
Signal processing circuit: receive the voltage sample value of semiconductor probe output, carry out filtering, processing and amplifying, and the simulating signal after will handling is converted into digital signal, export to microprocessor;
Microprocessor: first sampling switch and second sampling switch that receive the output of controlling of sampling circuit disconnect and closed status information, and the digital signal of received signal treatment circuit output, and control figure display display digit signal;
Digital indicator: receive the digital signal of microprocessor output, and show;
First sampling switch: connect inductive means and sample unit in the semiconductor probe, be used to control semiconductor probe and realize voltage sample;
Second sampling switch: connect sample unit and signal processing circuit in the semiconductor probe, be used to control the output that semiconductor probe is realized the voltage sample value.
In the above-mentioned non-intrusion type voltage measuring apparatus that comprises semi-conductor type probe, the principle of work of controlling of sampling circuit is: when the first sampling switch closure, when second sampling switch disconnects, realize the voltage sample of semiconductor probe, when first sampling switch disconnects, when second sampling switch is closed, stop voltage sample, realize the output of the voltage sample value of semiconductor probe.
The utility model has following beneficial effect compared to existing technology:
(1) semiconductor probe of the present utility model adopts inductive means and sample unit is integrated in structural design on the same block semiconductor substrate, can effectively reduce the volume and weight of semiconductor probe, convenient batch process;
(2) sample unit in the semiconductor probe of the present utility model is because the parallel-plate-type capacitance structure of " oxide layer-metal electrode-insulation course-metal electrode " that the employing semiconductor fabrication process is made into, have that electrode area is big, high sensitivity, wide range and good linearty, be fit to collect the induced charge that inductive means produces, better signal input can be provided for follow-up signal processing circuit;
(3) inductive means in the semiconductor probe of the present utility model, because epitaxial loayer directly is produced on the Semiconductor substrate, the electric charge in the epitaxial loayer only is a process of arranging again, does not relate to generation, the recombination process of charge carrier, so the response time is very fast.
Description of drawings
Fig. 1 is the utility model semi-conductor type sonde configuration synoptic diagram;
Fig. 2 is the utility model non-intrusion type voltage measuring apparatus structural representation.
Embodiment
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail:
At present, the semicon industry develop rapidly, by the appearance of new technology, the use of new material, make semiconductor fabrication that rapid progress arranged, under this precondition, semiconductor technology can be applied in the middle of the non-intrusion type voltage detecting, to obtain higher measuring accuracy, quicker response and littler volume and weight.
Principle of the present utility model is after putting into semiconductor probe in the middle of the electric field that tested voltage produces, the inner diverse location of semiconductor probe can produce electric potential difference, this electric potential difference can cause the distribution again of the inner charge carrier of semiconductor, at this moment, semiconductor is inner can to produce the distributed process again that a self-built electromotive force comes this charge carrier of balance, up to reaching equilibrium state.At this moment, because the existence of the heavy doping thick epitaxial layer at probe inductive means upper and lower surface place, probe will induce positive charge or negative charge at the upper and lower surface place.Generally, the self-built electromotive force of semiconductor inside can't measure, therefore the electric charge that needs the use sample unit to come acquisition probe to induce, sample unit by semiconductor fabrication process preparation has that electrode area is big, high sensitivity, wide range and good linearty, be fit to collect the probe induced charge, better signal input can be provided for follow-up signal processing circuit, thereby realize the non-intrusion type voltage measurement.
Be illustrated in figure 1 as the utility model semi-conductor type sonde configuration synoptic diagram, semiconductor probe is made up of the inductive means and the sample unit that are integrated on the same block semiconductor substrate 4 as seen from the figure, wherein inductive means is by the epitaxial loayer 3 that is grown in Semiconductor substrate 4 upper surfaces and lower surface, the metal electrode 2 and the pin on the metal electrode 2 that are produced on the epitaxial loayer 3 are formed, wherein pin is two, be respectively first pin 1 and second pin 9, wherein the material of Semiconductor substrate 4 is a silicon chip, a kind of in sapphire or the silit, epitaxial loayer 3 is a P type thick epitaxial layer, thickness is 10um～30um, and metal electrode 2 is the aluminium electrode, gold electrode or titanium electrode.
Sample unit is made up of the oxide layer 6 that is successively set on Semiconductor substrate 4 upper surfaces, lower metal electrode 8, insulation course 5, upper strata metal electrode 7 and the 3rd pin 10, the 4th pin 11, wherein the 3rd pin 10 is arranged on the upper strata metal electrode 7, and the 4th pin 11 is arranged on the lower metal electrode 8.Its at the middle and upper levels metal electrode 7 and lower metal electrode 8 be aluminium electrode, gold electrode or titanium electrode, and upper strata metal electrode 7 and lower metal electrode 8 thickness are 1.0um～1.5um; Insulation course 5 is a polyimide, and thickness is 0.5～1.0um; Oxide layer 6 can be silicon dioxide, and thickness is 0.5～1.0um.
Be illustrated in figure 2 as the utility model non-intrusion type voltage measuring apparatus structural representation, this measurement mechanism is by comprising the semi-conductor type probe as seen from the figure, the controlling of sampling circuit, signal processing circuit, microprocessor, digital indicator, first sampling switch and second sampling switch are formed, wherein be connected first sampling switch between first pin 1 in the semiconductor probe and the 3rd pin 10, be connected second sampling switch between the 3rd pin 10 and the signal processing circuit, use CD4066 or MAX4664 in the utility model, MAX4665, analog switch chips such as MAX4666 are as first sampling switch and second sampling switch.
The controlling of sampling circuit is connected with second sampling switch with first sampling switch, by controlling the disconnection and the closure of first sampling switch and second sampling switch, realize the voltage sample of semiconductor probe and the output of voltage sample value, and the voltage sample value exported to signal processing circuit, simultaneously the status information of first sampling switch and disconnection of second sampling switch and closure is exported to microprocessor, concrete principle of work is: when the first sampling switch closure, when second sampling switch disconnects, realize the voltage sample of semiconductor probe, when first sampling switch disconnects, when second sampling switch is closed, stop voltage sample, realize the output of the voltage sample value of semiconductor probe.Wherein the controlling of sampling circuit adopts the RC oscillating circuit, two inverse output terminals by the RC oscillating circuit drive two sampling switchs, realize closure of two sampling switchs, a disconnection, two inverse output terminals also can be exported to microprocessor with the duty of two sampling switchs simultaneously.
Signal processing circuit receives the voltage sample value of semiconductor probe output, carry out filtering, processing and amplifying, and the simulating signal after will handling is converted into digital signal, export to microprocessor, wherein carry out the amplifier of signal processing and amplifying and select AD8032, the A/D that simulating signal is converted into digital signal adopts AD7705BR.
Microprocessor receives first sampling switch of controlling of sampling circuit output and second sampling switch disconnects and closed status information, and the digital signal of signal processing circuit output, and the control figure display shows, microprocessor can be selected 51 series monolithics used always.
The concrete course of work is:
When system starts working, the controlling of sampling circuit is controlled the first sampling switch closure, second sampling switch disconnects, the semi-conductor type probe is sampled to tested voltage, after through one period sampling time, the controlling of sampling circuit is controlled first sampling switch and is disconnected, the second sampling switch closure, at this moment signal processing circuit will be handled the voltage value signal of semi-conductor type probe output, and result exported to microprocessor, microprocessor control figure display shows test results, and said process both had been a complete voltage tester cycle.
Claims (9)
1. a semi-conductor type is popped one's head in, it is characterized in that: form by the inductive means and the sample unit that are integrated on the block semiconductor substrate (4), wherein inductive means is by the epitaxial loayer (3) that is grown in Semiconductor substrate (4) upper surface and lower surface, the metal electrode (2) and the pin on the metal electrode (2) that are produced on the epitaxial loayer (3) are formed, sample unit is by the oxide layer (6) that is successively set on Semiconductor substrate (4) upper surface, lower metal electrode (8), insulation course (5), upper strata metal electrode (7) and pin are formed, and it respectively is provided with a pin on metal electrode (7) and the lower metal electrode (8) at the middle and upper levels.
2. a kind of semi-conductor type probe according to claim 1 is characterized in that: a kind of in silicon chip, sapphire or the silit of described Semiconductor substrate (4).
3. a kind of semi-conductor type probe according to claim 1, it is characterized in that: described epitaxial loayer (3) is a P type thick epitaxial layer, and the thickness of epitaxial loayer is 10um～30um.
4. a kind of semi-conductor type probe according to claim 1 is characterized in that: upper strata metal electrode (7) in described metal electrode (2), the sample unit and lower metal electrode (8) are a kind of in aluminium electrode, gold electrode or the titanium electrode.
5. a kind of semi-conductor type probe according to claim 1, it is characterized in that: upper strata metal electrode (7) in described metal electrode (2), the sample unit and lower metal electrode (8) thickness are 1.0um～1.5um.
6. a kind of semi-conductor type probe according to claim 1, it is characterized in that: insulation course in the described sample unit (5) is a polyimide, and thickness is 0.5～1.0um.
7. a kind of semi-conductor type probe according to claim 1, it is characterized in that: the thickness of oxide layer in the described sample unit (6) is 0.5～1.0um.
8. a non-intrusion type voltage measuring apparatus that comprises the described semi-conductor type probe of claim 1 is characterized in that also comprising controlling of sampling circuit, signal processing circuit, microprocessor, digital indicator, first sampling switch and second sampling switch, wherein:
Controlling of sampling circuit: be connected with second sampling switch with first sampling switch, by controlling the disconnection and the closure of first sampling switch and second sampling switch, realize the voltage sample of semiconductor probe and the output of voltage sample value, and the voltage sample value exported to signal processing circuit, simultaneously first sampling switch and second sampling switch are disconnected and closed status information is exported to microprocessor;
Signal processing circuit: receive the voltage sample value of semiconductor probe output, carry out filtering, processing and amplifying, and the simulating signal after filtering, the processing and amplifying is converted into digital signal, export to microprocessor;
Microprocessor: first sampling switch and second sampling switch that receive the output of controlling of sampling circuit disconnect and closed status information, and the digital signal of received signal treatment circuit output, and the control figure display shows described digital signal;
Digital indicator: receive the digital signal of microprocessor output, and show;
First sampling switch: connect inductive means and sample unit in the semiconductor probe, be used to control semiconductor probe and realize voltage sample;
Second sampling switch: connect sample unit and signal processing circuit in the semiconductor probe, be used to control the output that semiconductor probe is realized the voltage sample value.
9. a kind of non-intrusion type voltage measuring apparatus that comprises the described semi-conductor type probe of claim 1 according to claim 8, it is characterized in that: the principle of work of described controlling of sampling circuit is: when the first sampling switch closure, when second sampling switch disconnects, realize the voltage sample of semiconductor probe, when first sampling switch disconnects, when second sampling switch is closed, stop voltage sample, realize the output of the voltage sample value of semiconductor probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201419414U CN201662590U (en) | 2010-03-26 | 2010-03-26 | Semiconductor-type probe and non-invasive voltage measurement device comprising the same |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010201419414U CN201662590U (en) | 2010-03-26 | 2010-03-26 | Semiconductor-type probe and non-invasive voltage measurement device comprising the same |
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| Publication Number | Publication Date |
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| CN201662590U true CN201662590U (en) | 2010-12-01 |
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| CN2010201419414U Expired - Fee Related CN201662590U (en) | 2010-03-26 | 2010-03-26 | Semiconductor-type probe and non-invasive voltage measurement device comprising the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102854363A (en) * | 2011-06-28 | 2013-01-02 | 施耐德电器工业公司 | Measuring device and electric equipment unit comprising same |
| CN103499711A (en) * | 2013-09-23 | 2014-01-08 | 无锡市汇博普纳电子有限公司 | High-frequency integrated circuit alternating current automatic test probe with ultra small spacing |
| CN108872690A (en) * | 2018-07-04 | 2018-11-23 | 桂林市华谊智测科技有限责任公司 | A kind of non-contact inductive piece and test pencil |
-
2010
- 2010-03-26 CN CN2010201419414U patent/CN201662590U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102854363A (en) * | 2011-06-28 | 2013-01-02 | 施耐德电器工业公司 | Measuring device and electric equipment unit comprising same |
| CN102854363B (en) * | 2011-06-28 | 2016-12-21 | 施耐德电器工业公司 | Measurement apparatus and include the electrical appliance of this measurement apparatus |
| CN103499711A (en) * | 2013-09-23 | 2014-01-08 | 无锡市汇博普纳电子有限公司 | High-frequency integrated circuit alternating current automatic test probe with ultra small spacing |
| CN108872690A (en) * | 2018-07-04 | 2018-11-23 | 桂林市华谊智测科技有限责任公司 | A kind of non-contact inductive piece and test pencil |
| CN108872690B (en) * | 2018-07-04 | 2024-05-14 | 桂林市华谊智测科技有限责任公司 | Non-contact type induction sheet and test pencil |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101201 Termination date: 20150326 |
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| EXPY | Termination of patent right or utility model |