CN201654588U - Circuit for compensating temperature to bias voltage of avalanche photodiode - Google Patents

Circuit for compensating temperature to bias voltage of avalanche photodiode Download PDF

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Publication number
CN201654588U
CN201654588U CN 201029180075 CN201029180075U CN201654588U CN 201654588 U CN201654588 U CN 201654588U CN 201029180075 CN201029180075 CN 201029180075 CN 201029180075 U CN201029180075 U CN 201029180075U CN 201654588 U CN201654588 U CN 201654588U
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resistance
transistor
temperature
voltage
circuit
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CN 201029180075
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余向东
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China Jiliang University
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China Jiliang University
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Abstract

The utility model discloses a circuit for compensating temperature to bias voltage of an avalanche photodiode, which is characterized by comprising first to fifth resistors, a potentiometer, a negative temperature coefficient thermistor, a voltage regulator tube and first and second crystal triodes. The first and the second resistors, the potentiometer, the negative temperature coefficient thermistor and the third resistor of the circuit form a thermistor feedback sampling part; the fourth resistor and the voltage regulator tube are connected in series to form a reference voltage part; and the second crystal triode and the fifth resistor connected with the collector electrode of the crystal triode form a comparison amplification part. The thermistor feedback sampling part samples the output bias voltage; the comparison amplification part compares and amplifies the feedback sampling voltage and the reference voltage and then outputs the voltages to a first crystal triode; and the first crystal triode adjusts the output bias voltage according to the environmental temperature. The circuit can effectively realize the temperature compensation to the bias voltage of the avalanche photodiode; and compared with the traditional constant-temperature device, the utility model has lower cost, lower energy consumption and smaller size.

Description

A kind of bias voltage of avalanche photodiode is carried out temperature compensation circuit
Technical field
The utility model relates to temperature-compensation circuit, especially avalanche optoelectronic two utmost point bias voltages is carried out temperature compensation circuit.
Background technology
Avalanche photo diode (APD) is a kind of high-sensitive electrooptical device, is widely used in fields such as profile fiber temperature sensor, optical communication, laser ranging.Avalanche photodide need add tens reverses biased to several hectovolts when operate as normal, make it enter the avalanche region to obtain optimum sensitivity, the just bias voltage swing is general and environment temperature is proportional, and environment temperature is high more, required optimal reverse bias voltage is high more, otherwise then low more.These characteristics of avalanche photodide make it influenced by ambient temperature very big when concrete the application, when the reverse bias operating voltage constant, when environment temperature raises, sensitivity acutely descends, and environment temperature is when reducing, and may make avalanche diode cause noise to increase severely because of reverse bias voltage is too high again even breakdown.Traditional solution is to add that to avalanche photodide thermostat makes it keep temperature constant, but has increased the cost and the power consumption of system greatly.
Summary of the invention
The purpose of this utility model is for solving easily this problem influenced by ambient temperature of avalanche photodide, providing a kind of and cheaply bias voltage of avalanche photodiode is carried out temperature compensation circuit.
Of the present utility model avalanche optoelectronic two utmost point bias voltages are carried out temperature compensation circuit, comprise: first resistance, second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, potentiometer, negative tempperature coefficient thermistor, stabilivolt, first transistor and second transistor, first resistance, the potentiometer and second resistance are connected successively, end after negative tempperature coefficient thermistor and the 3rd resistance parallel connection links to each other with the other end of second resistance, the other end of this parallel circuit links to each other with an end of stabilivolt and ground connection, the movable end of potentiometer links to each other with the base stage of second transistor, one end of the emitter of second transistor and the 4th resistance and the other end of stabilivolt connect altogether, one end of the base stage of the collector of second transistor and first transistor and the 5th resistance connects altogether, the other end of the 5th resistance links to each other with the collector of first transistor, and the emitter of first transistor links to each other with the other end of the 4th resistance and the other end of first resistance.
First, second resistance in the said temperature compensating circuit, potentiometer and negative tempperature coefficient thermistor and resistance have constituted thermistor feedback sample part, the 4th resistance and stabilivolt have constituted the reference voltage part, and second transistor and the 5th resistance have constituted relatively amplifier section.The link of the first transistor collector and the 5th resistance is the input end of temperature-compensation circuit, and the link of the first transistor emitter and the 4th resistance and first resistance is the output terminal of temperature-compensation circuit.
During work, with the avalanche photo diode (APD) bias voltage input temp compensating circuit of need compensation, the output offset voltage of temperature-compensation circuit offers APD.Thermistor feedback sample part in the temperature-compensation circuit is sampled to output offset voltage and is fed back to the comparison amplifier section, relatively the difference of amplifier section reference voltage that feedback voltage and reference voltage are partly sent here is amplified and is given first transistor, through the adjusting of first transistor adjustment realization to output offset voltage.When environment temperature was constant, the resistance of thermistor was constant, and what in fact whole temperature-compensation circuit played is the effect of voltage stabilizer.When environment temperature uprises, the thermistor resistance of negative temperature coefficient diminishes, feedback sample voltage step-down, relatively the amplifier section output voltage uprises, and regulates that through first transistor output offset voltage is uprised, otherwise, when the environment temperature step-down, it is big that the thermistor resistance becomes, output offset voltage step-down, thus play the effect of temperature compensation.
The beneficial effects of the utility model are:
Temperature-compensation circuit of the present utility model can effectively be realized the temperature compensation to bias voltage of avalanche photodiode, thereby has solved avalanche photodide big problem influenced by ambient temperature.Compare with traditional thermostat, adopt that temperature-compensation circuit cost of the present utility model is lower, power consumption is lower, volume is littler.
Description of drawings
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
With reference to Fig. 1, avalanche optoelectronic two utmost point bias voltages are carried out temperature compensation circuit to be comprised: first resistance R 1, second resistance R 2, the 3rd resistance R 3, the 4th resistance R z, the 5th resistance R c, potentiometer VR1, negative tempperature coefficient thermistor RT, stabilivolt Dz, the first transistor T1 and the second transistor T2, first resistance R 1, the potentiometer VR1 and second resistance R 2 are connected successively, end after negative tempperature coefficient thermistor RT and 3 parallel connections of the 3rd resistance R links to each other with the other end of second resistance R 2, the other end of this parallel circuit links to each other with the end of stabilivolt Dz and ground connection, the movable end of potentiometer VR1 links to each other with the base stage of the second transistor T2, the end of the emitter of the second transistor T2 and the 4th resistance R z and the other end of stabilivolt Dz connect altogether, the end of the base stage of the collector of the second transistor T2 and the first transistor T1 and the 5th resistance R c connects altogether, the other end of the 5th resistance R c links to each other with the collector of the first transistor T1, and the emitter of the first transistor T1 links to each other with the other end of the 4th resistance R z and the other end of first resistance R 1.
Among the figure, Ui is the input offset voltage of temperature-compensation circuit, and Uo is the output offset voltage of temperature-compensation circuit.The second transistor T2 and the 5th resistance R c ratio of components are than amplifier section.The 4th resistance R z and stabilivolt Dz form the reference voltage part, and Uz is a reference voltage.First, second resistance R 1, R2, potentiometer VR1 and negative tempperature coefficient thermistor RT and resistance R 3 have constituted thermistor feedback sample part, Uf is a feedback sample voltage, the difference of Uf and Uz value is given the first transistor T1 after amplifying, thereby plays the effect of regulating output offset voltage U o.
If R=R1+VR1, Rx=R2+RT//R3, U=Uz+U Be2, U Be2Be the voltage between the second transistor T2 base stage and the emitter, by Tu Kede:
Uf=U (1)
Uf=UoRx/(R+Rx) (2)
By (1), (2) Shi Kede:
Uo=U(R+Rx)/Rx=U(1+R/Rx)(3)
By (3) formula as can be known, when U and R were constant, output voltage U o increased with the minimizing of Rx value.Negative tempperature coefficient thermistor RT adopts the market negative tempperature coefficient thermistor complete, that temperature control is higher (NTC) of raising variety, when environment temperature raises, the RT resistance diminishes, the Rx value diminishes, and it is big that Uo becomes, when environment temperature reduces, it is big that the RT resistance becomes, it is big that the RX value becomes, and Uo diminishes, and can play the effect to output voltage U o temperature compensation thus.
It is to adjust temperature compensation coefficient for convenience that second, third resistance R 2, R3, negative tempperature coefficient thermistor RT form its effect one of series-parallel network, and it two is in order to revise the non-linear of negative tempperature coefficient thermistor.By (3) formula as can be known, output voltage and Rx are not linear, but because the required bias voltage of avalanche photodide big (tens volts to several hectovolts), temperature compensation coefficient little (0.1V/ ℃ to 0.7V/ ℃), in common range of temperature (10 ℃-70 ℃), the required relative variation range of Rx is very little, therefore within the specific limits, can intend closely thinking that Rx and Uo are linear.
Adopt the said temperature compensating circuit, better linearity is arranged-5 ℃ of-50 ℃ of temperature ranges.

Claims (1)

1. one kind is carried out temperature compensation circuit to avalanche optoelectronic two utmost point bias voltages, it is characterized in that comprising:
First resistance (R1), second resistance (R2), the 3rd resistance (R3), the 4th resistance (Rz), the 5th resistance (Rc), potentiometer (VR1), negative tempperature coefficient thermistor (RT), stabilivolt (Dz), first transistor (T1) and second transistor (T2), first resistance (R1), potentiometer (VR1) and second resistance (R2) are connected successively, end after negative tempperature coefficient thermistor (RT) and the 3rd resistance (R3) parallel connection links to each other with the other end of second resistance (R2), the other end of this parallel circuit links to each other with an end of stabilivolt (Dz) and ground connection, the movable end of potentiometer (VR1) links to each other with the base stage of second transistor (T2), the other end of one end of the emitter of second transistor (T2) and the 4th resistance (Rz) and stabilivolt (Dz) connects altogether, one end of the base stage of the collector of second transistor (T2) and first transistor (T1) and the 5th resistance (Rc) connects altogether, the other end of the 5th resistance (Rc) links to each other with the collector of first transistor (T1), and the emitter of first transistor (T1) links to each other with the other end of the 4th resistance (Rz) and the other end of first resistance (R1).
CN 201029180075 2010-02-05 2010-02-05 Circuit for compensating temperature to bias voltage of avalanche photodiode Expired - Lifetime CN201654588U (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299508A (en) * 2011-08-26 2011-12-28 深圳茂硕电子科技有限公司 Power supply with duplex over-temperature protection circuits
CN102798466A (en) * 2011-05-27 2012-11-28 上海华魏光纤传感技术有限公司 APD (Avalanche Photo Diode) reverse bias voltage control circuit with temperature compensation
CN102840920A (en) * 2012-08-03 2012-12-26 中国科学院空间科学与应用研究中心 Biasing circuit and temperature compensation low-frequency amplification circuit for microwave radiometer
CN104868954A (en) * 2015-06-05 2015-08-26 成都新易盛通信技术股份有限公司 Optical module receiver and 1*9 optical module
CN105571651A (en) * 2016-03-18 2016-05-11 苏州大学 Data online measurement system
CN106094962A (en) * 2016-06-29 2016-11-09 电子科技大学 A kind of temperature-compensation circuit
CN106855420A (en) * 2016-12-28 2017-06-16 中国科学院长春光学精密机械与物理研究所 A kind of photoelectric sensor noise-reduction method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102798466A (en) * 2011-05-27 2012-11-28 上海华魏光纤传感技术有限公司 APD (Avalanche Photo Diode) reverse bias voltage control circuit with temperature compensation
CN102299508A (en) * 2011-08-26 2011-12-28 深圳茂硕电子科技有限公司 Power supply with duplex over-temperature protection circuits
CN102299508B (en) * 2011-08-26 2014-01-22 深圳茂硕电子科技有限公司 Power supply with duplex over-temperature protection circuits
CN102840920A (en) * 2012-08-03 2012-12-26 中国科学院空间科学与应用研究中心 Biasing circuit and temperature compensation low-frequency amplification circuit for microwave radiometer
CN104868954A (en) * 2015-06-05 2015-08-26 成都新易盛通信技术股份有限公司 Optical module receiver and 1*9 optical module
CN105571651A (en) * 2016-03-18 2016-05-11 苏州大学 Data online measurement system
CN106094962A (en) * 2016-06-29 2016-11-09 电子科技大学 A kind of temperature-compensation circuit
CN106855420A (en) * 2016-12-28 2017-06-16 中国科学院长春光学精密机械与物理研究所 A kind of photoelectric sensor noise-reduction method
CN106855420B (en) * 2016-12-28 2020-04-03 中国科学院长春光学精密机械与物理研究所 Noise reduction method for photoelectric sensor

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Granted publication date: 20101124

Effective date of abandoning: 20111109