CN201623126U - Package structure of inversed T-shaped heat dissipation part of resin circuit board chip flip - Google Patents

Package structure of inversed T-shaped heat dissipation part of resin circuit board chip flip Download PDF

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Publication number
CN201623126U
CN201623126U CN2010201229890U CN201020122989U CN201623126U CN 201623126 U CN201623126 U CN 201623126U CN 2010201229890 U CN2010201229890 U CN 2010201229890U CN 201020122989 U CN201020122989 U CN 201020122989U CN 201623126 U CN201623126 U CN 201623126U
Authority
CN
China
Prior art keywords
chip
circuit board
heat dissipation
resin circuit
dissipation part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2010201229890U
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Chinese (zh)
Inventor
王新潮
梁志忠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN2010201229890U priority Critical patent/CN201623126U/en
Application granted granted Critical
Publication of CN201623126U publication Critical patent/CN201623126U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to a package structure of an inversed T-shaped heat dissipation part of resin circuit board chip flip, comprising a chip (3), a single or multi-layered resin circuit board (9) born under the chip, a metal convex block (10), a conductive or nonconductive thermal-conductive binding material I (2) and a plastic package body (8), wherein the metal convex block (10) is used for mutually connecting signals from the chip to the single or multi-layered resin circuit board, and the conductive or nonconductive thermal-conductive binding material I (2) is arranged between the chip and the single or multi-layered resin circuit board. The utility model is characterized in that a heat dissipation part (7) is arranged above the chip (3), and a conductive or nonconductive thermal-conductive binding material II (6) is inlaid between the heat dissipation part (7) and the chip (3). The heat dissipation part (7) is in an inversed T-shaped structure. The heat dissipation part is additionally arranged above the chip to play a role of heat dissipation of high heat, the capability of heat dissipation is strong, and the heat of the chip can be rapidly transmitted to the outside of the package body.

Description

Resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure
(1) technical field
The utility model relates to a kind of resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type (as shown in Figures 3 and 4)
Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and providing a kind of can provide heat dissipation capability strong resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure.
The purpose of this utility model is achieved in that a kind of resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure, include the single or multiple lift resin circuit board that is carried of chip, chip below, conduction or nonconducting heat conduction bonding material I and the plastic-sealed body between metal coupling, chip and the described single or multiple lift resin circuit board that chip is used to the signal interconnection of single or multiple lift resin circuit board, above described chip, be provided with radiating block, be equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; This radiating block is inverted T-shape structure.
The beneficial effects of the utility model are:
The utility model is served as the function of the heat radiation of high heat by addition radiating block above chip, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the utility model resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure schematic diagram.
Reference numeral among the figure:
Conduction or nonconducting heat conduction bonding material I 2, chip 3, conduction or nonconducting heat conduction bonding material II 6, radiating block 7, plastic-sealed body 8, resin circuit board 9, metal coupling 10.
(5) embodiment
Referring to Fig. 5, Fig. 5 is the utility model resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure schematic diagram.As seen from Figure 5, the utility model resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure, include the single or multiple lift resin circuit board 9 that is carried of chip 3, chip below, conduction or nonconducting heat conduction bonding material I 2 and the plastic-sealed body 8 between metal coupling 10, chip and the described single or multiple lift resin circuit board that chip is used to the signal interconnection of single or multiple lift resin circuit board, above described chip 3, be provided with radiating block 7, be equipped with conduction or nonconducting heat conduction bonding material II 6 between this radiating block 7 and the described chip 3; This radiating block 7 is inverted T-shape structure.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.
The material of described metal coupling 10 can be tin, gold or alloy etc.

Claims (3)

1. resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure, include chip (3), the single or multiple lift resin circuit board (9) that is carried of chip below, the metal coupling that chip is used to the signal interconnection of single or multiple lift resin circuit board (10), conduction between chip and the described single or multiple lift resin circuit board or nonconducting heat conduction bonding material I (2) and plastic-sealed body (8), it is characterized in that being provided with radiating block (7), be equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3) in described chip (3) top; This radiating block (7) is inverted T-shape structure.
2. a kind of resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure according to claim 1, the material that it is characterized in that described radiating block (7) is copper, aluminium, pottery or alloy.
3. a kind of resin circuit board chip-flip reverse T type heat dissipation block encapsulating structure according to claim 1, the material that it is characterized in that described metal coupling (10) is tin, gold or alloy.
CN2010201229890U 2010-01-29 2010-01-29 Package structure of inversed T-shaped heat dissipation part of resin circuit board chip flip Expired - Lifetime CN201623126U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010201229890U CN201623126U (en) 2010-01-29 2010-01-29 Package structure of inversed T-shaped heat dissipation part of resin circuit board chip flip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010201229890U CN201623126U (en) 2010-01-29 2010-01-29 Package structure of inversed T-shaped heat dissipation part of resin circuit board chip flip

Publications (1)

Publication Number Publication Date
CN201623126U true CN201623126U (en) 2010-11-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010201229890U Expired - Lifetime CN201623126U (en) 2010-01-29 2010-01-29 Package structure of inversed T-shaped heat dissipation part of resin circuit board chip flip

Country Status (1)

Country Link
CN (1) CN201623126U (en)

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CX01 Expiry of patent term

Granted publication date: 20101103

CX01 Expiry of patent term