CN201578768U - Multi-wavelength semiconductor laser therapy apparatus - Google Patents
Multi-wavelength semiconductor laser therapy apparatus Download PDFInfo
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- CN201578768U CN201578768U CN2009202286332U CN200920228633U CN201578768U CN 201578768 U CN201578768 U CN 201578768U CN 2009202286332 U CN2009202286332 U CN 2009202286332U CN 200920228633 U CN200920228633 U CN 200920228633U CN 201578768 U CN201578768 U CN 201578768U
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Abstract
The utility model relates to a multi-wavelength semiconductor laser therapy apparatus, which comprises a control system, a therapy probe, a therapy probe power supply, an auxiliary therapy panel, an auxiliary therapy panel power supply and a lifting table. The utility model is characterized in that the control system is respectively connected with the therapy probe power supply, the auxiliary therapy panel power supply and the lifting table, the therapy probe power supply provides the power supply for the therapy probe, the auxiliary therapy panel power supply provides the power supply for the auxiliary therapy panel, the lifting table is connected with the auxiliary therapy panel, and the control system comprises a lifting table control press key, a therapy probe power supply switch, an auxiliary therapy panel power supply switch, an auxiliary therapy panel work mode selection press key and a semiconductor laser device output power regulation knob. The utility model effectively combines light emitting diodes (LED) and a semiconductor laser device, fully improves the light source characteristics of the laser therapy apparatus, expands the use range of the laser therapy apparatus, and improves the therapy effect of the laser therapy apparatus.
Description
Technical field
This utility model relates to a kind of semiconductor laser therapeutic machine of multi-wavelength.
Background technology
The stimulating effect that low power laser produces living organism can effectively be used to adjust immune system, nervous system, blood circulation and the anabolic function of body, makes pathological state be restored, and has facilitated the generation of laser therapeutic apparatus.At present, the light source of laser therapeutic apparatus has light emitting diode (LED) array, semiconductor laser and solid state laser etc., wherein a kind of as light source of the how single employing of the laser medical equipment on the market.Use led array as light source, therapeutic instrument exists the output laser power lower, and tissue penetration depth as shallow, spot size are big, the shortcoming that is difficult to focus on.Therefore the LED therapeutic instrument only has more application in beauty treatment, department of dermatologry, Pain Management, the department of physiotherapy, and is difficult to use in fields such as department of acupuncture and moxibustion, department of neurology, orthopaedics.Though use semiconductor laser or solid state laser dark as light source laser output height, the tissue penetration degree of depth, be easy to focus on and can be applied to fields such as department of acupuncture and moxibustion, department of neurology, gynecological.But its output optical maser wavelength is limited, spectral half-width peak very narrow (having only 1-2nm), output facula size are little, therefore can not show a candle to the LED therapeutic instrument at aspect therapeutic effect such as epidermis processing.If with above-mentioned two kinds of therapeutic instruments be used in combination the cost costliness, floor space is big.Therefore, present laser therapeutic apparatus only limits to limit the use field extending of laser therapeutic apparatus on a certain or certain several similar treatment of diseases.
Summary of the invention
The purpose of this utility model is to overcome the weak point of above-mentioned laser therapeutic apparatus, provides that a kind of therapeutic domain is wide, the semiconductor laser therapeutic machine of the significant multi-wavelength of therapeutic effect.This equipment has improved the light source characteristic of laser therapeutic apparatus with LED light emitting diode and the effective combination of semiconductor laser comprehensively, has expanded the scope of application of laser therapeutic apparatus, has promoted the therapeutic effect of laser therapeutic apparatus.
To achieve these goals, the technical solution adopted in the utility model is:
A kind of multi-wavelength semiconductor laser therapy apparatus, comprise control system, the treatment probe, treatment probe power supply, the auxiliary treatment panel, auxiliary treatment panel power supply, lifting platform, it is characterized in that: control system respectively with treatment probe power supply, auxiliary treatment panel power supply, lifting platform connects, treatment probe power supply provides power supply for the treatment probe, auxiliary treatment panel power supply provides power supply for the auxiliary treatment panel, lifting platform also is connected with the auxiliary treatment panel, described control system comprises lifting platform control button, treatment probe on and off switch, auxiliary treatment panel on and off switch, auxiliary treatment panel mode of operation selection key, the semiconductor laser output is adjusted knob, described treatment probe comprises probing shell, output wavelength is semiconductor laser and six red-light LEDs that output wavelength is 650nm of 808nm, output wavelength is the center that the semiconductor laser of 808nm is positioned at probing shell, the red-light LED that six output wavelengths are 650nm is evenly distributed on the annulus apart from semiconductor laser center 2cm, and single led rated power is 1mW.
Described auxiliary treatment panel comprises that panel enclosure, electroplax, output wavelength are the purple LED of 400 ± 10nm and the yellow light LED of 590 ± 10nm, output wavelength is that the purple LED of 400 ± 10nm and the yellow light LED of 590 ± 10nm alternately are installed on the electroplax, and electroplax is installed on the panel enclosure.
The invention has the advantages that:
(1) 650/808nm is at human body optical window range of wavelengths, and the tissue penetration of dual wavelength complex light is deepened to reach 7cm, produces multiple photo effect, the output height, and treatment time is short, and the beam and focus area is big.
(2) applied widely, can be widely used in Pain Management, recovering physiotherapy section, department of acupuncture and moxibustion, department of dermatologry, beauty treatment section, department of neurology, surgery, orthopaedics, gynecological etc.
(3) use based on the semiconductor laser module treatment, the treatment of LED light emitting diode matrix is that the mode therapeutic effect of assisting is more remarkable.
(4) introducing of intelligent control chip and power adjustment knob can improve therapeutic effect according to only mode of operation of the different choice of sufferer and power collocation.
(5) the integrated of LED light emitting diode and semiconductor laser can reduce cost, and reduces the floor space of medical apparatus and instruments.
Description of drawings
Fig. 1 is the system structure sketch map of a kind of embodiment of this utility model.
Fig. 2 is a kind of embodiment sketch map of control system among Fig. 1.
Fig. 3 a is an auxiliary treatment panel panel side view of the present utility model.
Fig. 3 b is an auxiliary treatment face onboard led distribution front view of the present utility model.
Fig. 4 a is the side view of this utility model treatment probe.
Fig. 4 b is this utility model treatment probe light source output end face front view.
Fig. 5 is a kind of embodiment sketch map of LED light emitting diode matrix control system among Fig. 1.。
The specific embodiment
A kind of as shown in Figure 1 multi-wavelength semiconductor laser therapy apparatus comprises control system 1, treatment probe 2, treatment probe power supply 3, auxiliary treatment panel 4, auxiliary treatment panel power supply 5, lifting platform 6.
Be used to control the running parameter for the treatment of probe 2 and auxiliary treatment panel 4 by control system 1 input control signal, and the height of adjustment lifting platform 6 is convenient to the therapeutic effect that auxiliary treatment panel 4 plays the best.
Treatment probe 2 comprises that probing shell, output wavelength are that semiconductor laser and the output wavelength of 808nm is the red-light LED of 650nm, as main treatment light source, are used for the treatment of sufferer.The power of 808nm infrared light can be adjustable continuously at 1mW-500mW.
Treatment probe power supply 3 is accepted the output signal of control system 1 and is controlled the switch of 650nm HONGGUANG and the output of 808nm infrared light.
Auxiliary treatment panel 4 comprises that panel enclosure, output wavelength are the purple LED of 400 ± 10nm and the yellow light LED of 590 ± 10nm, are used for the auxiliary treatment sufferer.
Auxiliary treatment panel power supply 5 is accepted the switching signal of control system 1 output, selects the mode of operation of LED in the auxiliary treatment panel 2.Pattern one is only gold-tinted output, and pattern two is exported for gold-tinted, purple light simultaneously for only purple light output, pattern three.
The height of lifting platform 6 is regulated and control by control system 1 according to the needs of treatment.
As shown in Figure 2, be the sketch map of a kind of embodiment of control system.Control system comprises lifting platform control button 7, treatment probe on and off switch 8, auxiliary treatment panel on and off switch 9, auxiliary treatment panel mode of operation selection key 10, semiconductor laser output adjustment knob 11.
Lifting platform control button 7 is used for controlling the rising or the reduction of lifting platform 6.
The unlatching of red-light LED or close in the treatment probe on and off switch 8 control treatment probes, and the unlatching of semiconductor laser or close.
Auxiliary treatment panel on and off switch 9 is used for controlling the unlatching of yellow light LED and purple LED power supply in the auxiliary treatment panel 3 or closes.
Auxiliary treatment panel mode of operation selection key 10 is being controlled the mode of operation of yellow light LED and purple LED in the auxiliary treatment panel 3.Pattern one starts for yellow light LED, and purple LED is closed; Pattern two starts for purple LED, and yellow light LED is closed; Pattern three all starts for yellow light LED and purple LED.
The semiconductor laser output is adjusted the needs of knob 11 according to treatment, adjusts the output laser power of semiconductor laser.
Shown in Fig. 3 a, Fig. 3 b, be 4 one kinds of embodiment sketch maps of auxiliary treatment panel, Fig. 3 a is the panel side view, Fig. 3 b is a face onboard led distribution front view.The LED light emitting diode matrix comprises the light emitting diode of installation panel, output gold-tinted and the light emitting diode of output purple light.Have 1260 LED, wherein blue coloured light has 630, the jaundice coloured light have 630.1260 LED are installed in respectively on 6 electroplaxs, and every face onboard led is divided into 7 rows, 30 of every rows.Once be numbered 12,13,14,15,16,17 according to from left to right 6 electroplaxs of order as shown in the figure.Wherein the LED of jaundice coloured light is divided into 30 of the every rows of 4 rows on 12,14,16 these 3 panels, amounts to 120; The LED of blue coloured light is divided into 30 of the every rows of 3 rows, amounts to 90.13, the LED of jaundice coloured light is divided into 30 of the every rows of 3 rows on 15,17 these 3 panels, amounts to 90; The LED of blue coloured light is divided into 30 of the every rows of 4 rows, amounts to 120.
Purple-light illuminanted LED alternately arranges with the LED of jaundice light in each fritter.
Shown in Fig. 4 a, Fig. 4 b, be the sketch map of 2 one kinds of embodiment of treatment probe.Fig. 4 a is the side view of treatment probe 2, and Fig. 4 b is a light source output end face front view.Output wavelength is the center that the semiconductor laser 18 of 808nm is positioned at laser probe 2, and its output is adjustable continuously between 1mW-500mW.The red-light LED 19 that six output wavelengths are 650nm is evenly distributed on the annulus apart from semiconductor laser 18 center 2cm, and single led rated power is 1mW.The output facula diameter of treatment probe 2 is 80-100mm; Distance apart from the sufferer place during therapeutic instrument treatment is about 10cm.The position of treatment probe 2 and direction can be adjusted voluntarily according to the position of treatment sufferer.
As shown in Figure 5, be a kind of embodiment sketch map of the led array control system of auxiliary treatment panel 4.This system comprises single-chip microcomputer 20, yellow light LED power drives card 21, purple LED power drives card 22, yellow light LED power supply 23, purple LED power supply 24.Needs according to treatment instruct to single-chip microcomputer 20 inputs, and single-chip microcomputer 20 judges according to instruction whether driver card 21,22 opens, and then the duty of decision LED power supply 23,24, thereby reach the purpose of control led array mode of operation.
Claims (3)
1. multi-wavelength semiconductor laser therapy apparatus, comprise control system, the treatment probe, treatment probe power supply, the auxiliary treatment panel, auxiliary treatment panel power supply, lifting platform, it is characterized in that: control system respectively with treatment probe power supply, auxiliary treatment panel power supply, lifting platform connects, treatment probe power supply provides power supply for the treatment probe, auxiliary treatment panel power supply provides power supply for the auxiliary treatment panel, lifting platform also is connected with the auxiliary treatment panel, and described control system comprises lifting platform control button, treatment probe on and off switch, auxiliary treatment panel on and off switch, auxiliary treatment panel mode of operation selection key, the semiconductor laser output is adjusted knob.
2. multi-wavelength semiconductor laser therapy apparatus according to claim 1, it is characterized in that: described treatment probe comprises that probing shell, output wavelength are semiconductor laser and six red-light LEDs that output wavelength is 650nm of 808nm, output wavelength is the center that the semiconductor laser of 808nm is positioned at probing shell, the red-light LED that six output wavelengths are 650nm is evenly distributed on the annulus apart from semiconductor laser center 2cm, and single led rated power is 1mW.
3. multi-wavelength semiconductor laser therapy apparatus according to claim 1, it is characterized in that: described auxiliary treatment panel comprises that panel enclosure, electroplax, output wavelength are the purple LED of 400 ± 10nm and the yellow light LED of 590 ± 10nm, output wavelength is that the purple LED of 400 ± 10nm and the yellow light LED of 590 ± 10nm alternately are installed on the electroplax, and electroplax is installed on the panel enclosure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202286332U CN201578768U (en) | 2010-04-12 | 2010-04-12 | Multi-wavelength semiconductor laser therapy apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202286332U CN201578768U (en) | 2010-04-12 | 2010-04-12 | Multi-wavelength semiconductor laser therapy apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN201578768U true CN201578768U (en) | 2010-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009202286332U Expired - Lifetime CN201578768U (en) | 2010-04-12 | 2010-04-12 | Multi-wavelength semiconductor laser therapy apparatus |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103341237A (en) * | 2013-07-24 | 2013-10-09 | 黄华 | Dual-wavelength infrared physiotherapy method and device |
| CN104096319A (en) * | 2014-07-22 | 2014-10-15 | 平湖邑飞光电科技有限公司 | Intelligent multi-channel composite semiconductor laser therapeutic apparatus and method |
| CN105920741A (en) * | 2016-05-20 | 2016-09-07 | 武汉三友创鑫科技有限公司 | He-Ne laser and LED combined therapeutic instrument |
| CN106039583A (en) * | 2016-05-20 | 2016-10-26 | 武汉三友创鑫科技有限公司 | He-Ne Laser composite LED therapeutic instrument and application method thereof |
| CN110401102A (en) * | 2019-06-12 | 2019-11-01 | 武汉芸禾光电技术有限公司 | A kind of five wavelength High Power Diode Laser Therapeutic Instrument systems |
-
2010
- 2010-04-12 CN CN2009202286332U patent/CN201578768U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103341237A (en) * | 2013-07-24 | 2013-10-09 | 黄华 | Dual-wavelength infrared physiotherapy method and device |
| CN104096319A (en) * | 2014-07-22 | 2014-10-15 | 平湖邑飞光电科技有限公司 | Intelligent multi-channel composite semiconductor laser therapeutic apparatus and method |
| CN104096319B (en) * | 2014-07-22 | 2016-08-31 | 平湖邑飞光电科技有限公司 | Intelligent multi-channel compound semiconductor laser therapeutic instrument and method |
| CN105920741A (en) * | 2016-05-20 | 2016-09-07 | 武汉三友创鑫科技有限公司 | He-Ne laser and LED combined therapeutic instrument |
| CN106039583A (en) * | 2016-05-20 | 2016-10-26 | 武汉三友创鑫科技有限公司 | He-Ne Laser composite LED therapeutic instrument and application method thereof |
| CN110401102A (en) * | 2019-06-12 | 2019-11-01 | 武汉芸禾光电技术有限公司 | A kind of five wavelength High Power Diode Laser Therapeutic Instrument systems |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Cheng Jinming Inventor before: Cheng Jinming Inventor before: Huang Ye |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CHENG JINMING HUANG YE TO: CHENG JINMING |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100915 |