CN201515318U - Two-column high-voltage winding overlaying connection structure - Google Patents
Two-column high-voltage winding overlaying connection structure Download PDFInfo
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- CN201515318U CN201515318U CN2009203125855U CN200920312585U CN201515318U CN 201515318 U CN201515318 U CN 201515318U CN 2009203125855 U CN2009203125855 U CN 2009203125855U CN 200920312585 U CN200920312585 U CN 200920312585U CN 201515318 U CN201515318 U CN 201515318U
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- bridge rectifier
- pressure winding
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Abstract
The utility model discloses a two-column high-voltage winding overlaying connection structure. Two columns are respectively defined as a first column and a second column. The first column is provided with a plurality of first high-voltage windings and the second column is provided with a plurality of second high-voltage windings. The plurality of first high-voltage windings of the first column and the plurality of second high-voltage windings of the second column are correspondingly connected in series one by one to form a plurality of differential voltage circuits. The plurality of differential voltage circuits are connected in series. A bridge rectifier circuit is connected between the anode and the cathode of each differential voltage circuit.
Description
Technical field
The utility model relates to a kind of two stem high pressure windings stack syndeton.
Background technology
Existing two stem high pressure windings stack syndeton, this two stem is defined as first stem and second stem respectively.This first stem solderless wrapped connection has a plurality of first high pressure windings, and this second stem solderless wrapped connection has a plurality of second high pressure windings, more than this first stem more than first a high pressure winding and this second stem second a high pressure winding corresponding one by one.These a plurality of first high pressure windings are connected after the rectification respectively successively with the corresponding second high pressure winding, and this is alternately corresponding one by one.Simultaneously, a plurality of first high pressure windings connect bridge rectifier with after the second corresponding high pressure winding is connected respectively, DC series respectively then, connect this this first high pressure winding and this this second high pressure winding.Because adopt after this syndeton, the pressure reduction of being separated by between two windings far away is bigger, therefore can exist requirement to increase insulation distance, cause that window broadening brings bigger loss.
The utility model content
The utility model provides a kind of two stem high pressure windings stack syndeton, and its existing insulation distance increase of two stem high pressure windings stack syndeton that has overcome background technology causes the big deficiency of broadening loss unshakable in one's determination.
One of technical scheme that its technical problem that solves the utility model adopts is:
A kind of two stem high pressure windings stack syndeton, this two stem is defined as first stem and second stem respectively, this first stem is provided with a plurality of first high pressure windings, this second stem is provided with a plurality of second high pressure windings, a second high pressure winding is corresponding one by one more than the individual first high pressure winding and this second stem more than this first stem connects and composition pressure reduction circuit, these a plurality of pressure reduction circuit series connection all are connected with bridge rectifier between the positive and negative terminal of this each pressure reduction circuit.
Among one preferred embodiment, the first high pressure winding number of this first stem solderless wrapped connection equates with the second high pressure winding number of this second stem solderless wrapped connection.
Among one preferred embodiment, the second high pressure winding number of the first high pressure winding number of this first stem solderless wrapped connection and this second stem solderless wrapped connection all is four or five or six or eight.
Among one preferred embodiment, this bridge rectifier comprises four diode rectification silicon stacks, these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, this two different names electrode connects the positive and negative terminal of pressure reduction circuit, and the homonymy electrode DC series of these a plurality of pressure reduction circuit by bridge rectifier together.
Among one preferred embodiment, this bridge rectifier comprises eight diode rectification silicon stacks, these eight diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, this two different names electrode connects the positive and negative terminal of pressure reduction circuit, and the homonymy electrode DC series of these a plurality of pressure reduction circuit by bridge rectifier together.
Two of the technical scheme that its technical problem that solves the utility model adopts is:
A kind of two stem high pressure windings stack syndeton, this two stem unshakable in one's determination is defined as first stem and second stem respectively, this first stem is provided with a plurality of first high pressure windings, this second stem is provided with a plurality of second high pressure windings, be connected with first bridge rectifier between the positive and negative terminal of first a high pressure winding more than this first stem, be connected with second bridge rectifier between the positive and negative terminal of second a high pressure winding more than this second stem, second bridge rectifier of second a high pressure winding is corresponding one by one more than first bridge rectifier of the individual first high pressure winding and this second stem more than this first stem connects and composition pressure reduction circuit these a plurality of pressure reduction circuit series connection.
Among one preferred embodiment, the first high pressure winding number of this first stem solderless wrapped connection equates with the second high pressure winding number of this second stem solderless wrapped connection.
Among one preferred embodiment, the second high pressure winding number of the first high pressure winding number of this first stem solderless wrapped connection and this second stem solderless wrapped connection all is four or five or six or eight.
Among one preferred embodiment, this first bridge rectifier comprises four diode rectification silicon stacks, and these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the first high pressure winding; This second bridge rectifier comprises four diode rectification silicon stacks, and these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the second high pressure winding; The homonymy electrode of this first bridge rectifier connects the homonymy electrode of second bridge rectifier.
Among one preferred embodiment, this first bridge rectifier comprises eight diode rectification silicon stacks, and these eight diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the first high pressure winding; This second bridge rectifier comprises eight diode rectification silicon stacks, and these eight diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the second high pressure winding; The homonymy electrode of this first bridge rectifier connects the homonymy electrode of second bridge rectifier.
The technical program is compared with background technology: because a corresponding one by one DC series of the second high pressure winding or the first high pressure winding and corresponding second high pressure winding composition pressure reduction circuit after the AC series in twos more than the first high pressure winding and this second stem more than this first stem, these a plurality of pressure reduction circuit series connection, all be connected with bridge rectifier between the positive and negative terminal of this each pressure reduction circuit, therefore can overcome the existing deficiency of background technology, and has a following advantage: 1, not only can be by each winding of DC series so that high pressure to be provided, pressure reduction has only single winding pressure reduction between the two stem high pressure windings but also can make; Though 2 with on the axis of a cylinder between the high pressure winding pressure reduction be the double of single winding pressure reduction isolations because skeleton and isolating cylinder suit and parlor end circle are attached the names of pre-determined candidates, so be enough to solve withstand voltage and creepage distance problem.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is the schematic diagram of the two stem high pressure windings stack syndeton in the preferred embodiment one of the present utility model.
Fig. 2 is the schematic diagram of the two stem high pressure windings stack syndeton in the preferred embodiment two of the present utility model.
Embodiment
Embodiment one
See also Fig. 1, a kind of two stem high pressure windings stack syndeton, two stems are defined as first stem 100 and second stem 200 respectively.These first stem, 100 solderless wrapped connections have four first high pressure windings 110, these second stem, 200 solderless wrapped connections have four second high pressure windings 210, and the corresponding one by one series connection of four the first high pressure windings 110 of this first stem 100 and four second high pressure windings 210 of this second stem 200 is also formed pressure reduction circuit 300.Among the present embodiment, this high pressure winding be with four be example, but not as limit, other all can adapt to present embodiment as five, six, eight etc., wherein, can increase or reduce according to output voltage, increases or reduce high pressure winding number.
All be connected with bridge rectifier 310 between the positive and negative terminal of this each pressure reduction circuit 300, this bridge rectifier 310 comprises eight (or four) diode rectification silicon stacks, these eight (or four) diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, this two different names electrode connects the positive and negative terminal of pressure reduction circuit 300, and these a plurality of pressure reduction circuit are cascaded by the homonymy electrode of bridge rectifier in twos.
Thereby make that the pressure reduction of output is the pressure reduction sum of the pressure reduction and four the second high pressure windings 210 of four first high pressure windings 110, that is to say the octuple that equals winding pressure reduction.
Embodiment two
See also Fig. 2, a kind of two stem high pressure windings stack syndeton, two stems are defined as first stem 100 and second stem 200 respectively.These first stem, 100 solderless wrapped connections have four first high pressure windings 110, these second stem, 200 solderless wrapped connections have four second high pressure windings 210, be connected with first bridge rectifier 111 between the positive and negative terminal of the first high pressure winding more than this first stem, be connected with second bridge rectifier 211 between the positive and negative terminal of second a high pressure winding more than this second stem.
This first bridge rectifier 111 comprises four (or eight) diode rectification silicon stacks, and these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the first high pressure winding.This second bridge rectifier 211 comprises four (or eight) diode rectification silicon stacks, and these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the second high pressure winding.
Between first high pressure winding 110 and the second high pressure winding 210, the homonymy electrode of this first bridge rectifier connects the homonymy electrode of second bridge rectifier one to one for this, to form pressure reduction circuit 300.This this a plurality of pressure reduction circuit are cascaded by the homonymy electrode of first bridge rectifier and the homonymy electrode of second bridge rectifier.
The above only is the utility model preferred embodiment, so can not limit the scope that the utility model is implemented according to this, i.e. the equivalence of doing according to the utility model claim and description changes and modifies, and all should still belong in the scope that the utility model contains.
Claims (10)
1. stem high pressure winding stack syndeton, this two stem is defined as first stem and second stem respectively, this first stem is provided with a plurality of first high pressure windings, this second stem is provided with a plurality of second high pressure windings, it is characterized in that: second a high pressure winding is corresponding one by one more than the individual first high pressure winding and this second stem more than this first stem connects and composition pressure reduction circuit, these a plurality of pressure reduction circuit series connection all are connected with bridge rectifier between the positive and negative terminal of this each pressure reduction circuit.
2. two stem high pressure windings stack syndeton according to claim 1, it is characterized in that: the first high pressure winding number of this first stem solderless wrapped connection equates with the second high pressure winding number of this second stem solderless wrapped connection.
3. two stem high pressure windings stack syndeton according to claim 1 and 2, it is characterized in that: the second high pressure winding number of the first high pressure winding number of this first stem solderless wrapped connection and this second stem solderless wrapped connection all is four or five or six or eight.
4. two stem high pressure windings stack syndeton according to claim 1 and 2, it is characterized in that: this bridge rectifier comprises four diode rectification silicon stacks, these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, this two different names electrode connects the positive and negative terminal of pressure reduction circuit, and the homonymy electrode DC series of these a plurality of pressure reduction circuit by bridge rectifier together.
5. two stem high pressure windings stack syndeton according to claim 1 and 2, it is characterized in that: this bridge rectifier comprises eight diode rectification silicon stacks, these eight diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, this two different names electrode connects the positive and negative terminal of pressure reduction circuit, and the homonymy electrode DC series of these a plurality of pressure reduction circuit by bridge rectifier together.
6. stem high pressure winding stack syndeton, this two stem unshakable in one's determination is defined as first stem and second stem respectively, this first stem is provided with a plurality of first high pressure windings, this second stem is provided with a plurality of second high pressure windings, it is characterized in that: be connected with first bridge rectifier between the positive and negative terminal of first a high pressure winding more than this first stem, be connected with second bridge rectifier between the positive and negative terminal of second a high pressure winding more than this second stem, second bridge rectifier of second a high pressure winding is corresponding one by one more than first bridge rectifier of the individual first high pressure winding and this second stem more than this first stem connects and composition pressure reduction circuit these a plurality of pressure reduction circuit series connection.
7. two stem high pressure windings stack syndeton according to claim 6, it is characterized in that: the first high pressure winding number of this first stem solderless wrapped connection equates with the second high pressure winding number of this second stem solderless wrapped connection.
8. according to claim 6 or 7 described two stem high pressure windings stack syndetons, it is characterized in that: the second high pressure winding number of the first high pressure winding number of this first stem solderless wrapped connection and this second stem solderless wrapped connection all is four or five or six or eight.
9. according to claim 6 or 7 described two stem high pressure windings stack syndetons, it is characterized in that: this first bridge rectifier comprises four diode rectification silicon stacks, these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the first high pressure winding; This second bridge rectifier comprises four diode rectification silicon stacks, and these four diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the second high pressure winding; The homonymy electrode of this first bridge rectifier connects the homonymy electrode of second bridge rectifier.
10. according to claim 6 or 7 described two stem high pressure windings stack syndetons, it is characterized in that: this first bridge rectifier comprises eight diode rectification silicon stacks, these eight diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the first high pressure winding; This second bridge rectifier comprises eight diode rectification silicon stacks, and these eight diode rectification silicon stacks link to each other and have two different name electrodes and two homonymy electrodes, and this two different names electrode connects the positive and negative terminal of the second high pressure winding; The homonymy electrode of this first bridge rectifier connects the homonymy electrode of second bridge rectifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009203125855U CN201515318U (en) | 2009-10-15 | 2009-10-15 | Two-column high-voltage winding overlaying connection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009203125855U CN201515318U (en) | 2009-10-15 | 2009-10-15 | Two-column high-voltage winding overlaying connection structure |
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| Publication Number | Publication Date |
|---|---|
| CN201515318U true CN201515318U (en) | 2010-06-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009203125855U Expired - Fee Related CN201515318U (en) | 2009-10-15 | 2009-10-15 | Two-column high-voltage winding overlaying connection structure |
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| CN (1) | CN201515318U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413663A (en) * | 2013-08-27 | 2013-11-27 | 盐城正邦环保科技有限公司 | High power, high frequency and high voltage rectifier transformer |
-
2009
- 2009-10-15 CN CN2009203125855U patent/CN201515318U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413663A (en) * | 2013-08-27 | 2013-11-27 | 盐城正邦环保科技有限公司 | High power, high frequency and high voltage rectifier transformer |
| CN103413663B (en) * | 2013-08-27 | 2016-03-16 | 盐城正邦环保科技有限公司 | A kind of high-power high-frequency high-voltage rectifier transformer |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100623 Termination date: 20171015 |