CN201512602U - Single crystal furnace - Google Patents
Single crystal furnace Download PDFInfo
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- CN201512602U CN201512602U CN2009202309847U CN200920230984U CN201512602U CN 201512602 U CN201512602 U CN 201512602U CN 2009202309847 U CN2009202309847 U CN 2009202309847U CN 200920230984 U CN200920230984 U CN 200920230984U CN 201512602 U CN201512602 U CN 201512602U
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Abstract
The utility model relates to a single crystal furnace which comprises an upper rotating system and a lower transmission system, wherein the upper rotating system is connected with the lower transmission system by a large flange; the large flange is provided with a hole which is communicated with gas equipment; the upper rotating system comprises a distributing cover; the distributing cover is connected with the end surface of the large flange through a small flange; the distributing cover is positioned in a furnace chamber of the lower transmission system; the distributing cover has a cylindrical structure, and the edge of the lower end surface thereof is an inclined surface; the inclined surface is provided with a through hole; and the through hole is communicated with the hole of the furnace chamber and the hole of the large flange. The single crystal furnace is provided with the gas distributing cover, and has simple structure and low cost, therefore, argon gas entering the furnace chamber is uniformly distributed, which is beneficial to discharging mixed gas, guarantees the vacuum degree in the furnace, improves the quality of silicon single crystals, and effectively prolongs the service life of the single crystal furnace.
Description
Technical field
The utility model relates to a kind of single crystal growing furnace, is specifically related to a kind of single crystal growing furnace that has the gas fluid dividing cover.
Background technology
Single crystal growing furnace is the growth apparatus of single crystal, and commonly used then is the crystal pulling method single crystal growing furnace at present.Need to think constantly to charge in the single crystal growing furnace argon gas at silicon single crystal in by the process of pulling growth, on the one hand, because of silicon single crystal is lifted production under vacuum state; On the other hand, when examination is brilliant, need tests its quality from the first crystal of taking-up in the stove and whether reach requirement, can continue to lift processing if meet the demands, if do not meet then and will adjust starting material or device parameter etc., try crystalline substance after adjusting again, until reaching requirement.This tries brilliant process makes outside air enter furnace chamber, has destroyed the vacuum state in its original production process, so will constantly charge into argon gas in stove; At last, because of silicon single crystal can constantly generate some oxide compounds and impurity dust in the process of growth in stove, because heating member in the single crystal growing furnace and crucible holding components etc. are made by graphite, oxide compound corrodes these parts of being made by graphite easily, and the impurity dust is adsorbed on these parts easily, perhaps stop up furnace interior spare, influence the work-ing life of single crystal growing furnace, also influence the quality of silicon single crystal, therefore, need in single crystal growing furnace, constantly to charge into argon gas, need simultaneously certainly mixed gas to be discharged out of the furnace with vacuum pump.
Existing single crystal growing furnace argon gas inflation mechanism is directly by advancing the argon gas mouth on the body of heater, enter furnace chamber through a flange, this structure is unfavorable for that argon gas is full of furnace chamber, thereby may cause in the furnace chamber some air or oxide compound, impurity dust not to remain in the furnace chamber, and then influence the quality of silicon single crystal and influence work-ing life of single crystal growing furnace with the argon gas thorough mixing.
The utility model content
For addressing the above problem, the utility model provides a kind of single crystal growing furnace, and this single crystal growing furnace has the gas fluid dividing cover, makes the argon gas that feeds furnace chamber be evenly distributed, and helps the discharge of mixed gas, has guaranteed the vacuum tightness in the stove, has improved the quality of silicon single crystal.
The technical scheme that the utility model is adopted for achieving the above object is:
A kind of single crystal growing furnace, comprise rotational system, lower transmission system, described going up between rotational system and the lower transmission system is connected by big flange, on the flange hole that communicates with gas apparatus arranged greatly, and described last rotational system comprises fluid dividing cover, described fluid dividing cover is connected with big end face of flange by little flange, described fluid dividing cover is positioned at the furnace chamber of lower transmission system, and described fluid dividing cover is tubular structure, and is the inclined-plane at its edge, lower surface, through hole is arranged on the inclined-plane, and this through hole communicates with hole on furnace chamber and the big flange.
For the ease of processing and make argon gas circulation even, smooth and easy, and air tight, described fluid dividing cover comprises outer outlet body, inner barrel, and described outer outlet body is that the lower end is the tubular structure on inclined-plane, and described inner barrel is a tubular structure, and it is positioned at outer outlet body; Described outer outlet body is affixed by its end, inclined-plane and the sealing of inner barrel end, and described outer outlet body upper end embeds little end face of flange and is connected with little flange seal; Described inner barrel upper end pass little flange center through hole and with little flange center through-hole wall sealing and fixing; Be evenly equipped with n through hole on the described outer outlet body inclined-plane, this through hole communicates with furnace chamber, is evenly equipped with n the flange through hole relative with outer outlet body inclined-plane through hole on the described little flange.
From easy to process and make that argon gas stream is clear and coherent smooth and consider that in big flange lower surface one side two ends being arranged is the long step trough of circular arc, this groove bottom land one end communicates with the shoulder hole of flange upper surface greatly, and a flange through hole on the described little flange is relative with long step trough.
Described little flange is connected with big flange by web member, and for preventing gas leakage, the side in the vat of described long step trough is embedded with a gasket, and the sealing pad contacts with little flange upper surface.
Easy to process in order both to make, can not influence sealing property again, end, described outer outlet body inclined-plane and the welding of inner barrel end are fixing, described outer outlet body upper end and little flange welded seal, described inner barrel upper end and little flange center through-hole wall welded seal.
Unimpeded for making that argon gas enters furnace chamber, do not increase the technology cost again, the number n of through hole is 6～8 on the described outer outlet body inclined-plane; The number n preferred 8 of through hole on the described outer outlet body inclined-plane.
Described web member is a screw.
A kind of single crystal growing furnace of the present utility model, it has the gas fluid dividing cover, and this apparatus structure is simple, cost is low, makes the argon gas that feeds furnace chamber be evenly distributed, and helps the discharge of mixed gas, guarantee the vacuum tightness in the stove, improved the quality of silicon single crystal, effectively prolonged the life-span of single crystal growing furnace.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the cross section enlarged view that fluid dividing cover is connected with little flange.
Fig. 3 is connected with little flange for fluid dividing cover overlooks enlarged view.
Fig. 4 is connected with little flange for fluid dividing cover looks up enlarged view.
Fig. 5 is the cross section enlarged view of big flange.
Fig. 6 is the enlarged view of looking up of big flange.
Among the figure: the last rotational system of 1-, 2-lower transmission system, the big flange of 3-, the long step trough of 3-1-, 3-2-shoulder hole, 4-fluid dividing cover, the 4-1-outer outlet body, 4-2-inner barrel, 4-3-through hole, the little flange of 5-, 5-1-central through hole, 5-2-flange through hole, the 6-furnace chamber, 7-joint, 8-screw, 9-gasket, 10-piston.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is described further.
As shown in Figure 1 and Figure 2, a kind of single crystal growing furnace comprises rotational system 1, lower transmission system 2, is connected by big flange 3 between last rotational system 1 and the lower transmission system 2.Last rotational system 1 comprises fluid dividing cover 4, and fluid dividing cover 4 is connected with big flange 3 end faces by little flange 5, and fluid dividing cover 4 is positioned at the furnace chamber 6 of lower transmission system 2.
Fluid dividing cover 4 comprises outer outlet body 4-1, inner barrel 4-2, and outer outlet body 4-1 is that the lower end is the tubular structure on inclined-plane, and inner barrel 4-2 is a tubular structure, and it is positioned at outer outlet body 4-1; Outer outlet body 4-1 fixes by its end, inclined-plane and inner barrel 4-2 end welded seal, outer outlet body 4-1 embed little flange 5 and with little flange 5 welded seals.
Inner barrel 4-2 pass the upper end little flange 5 central through hole 5-1 and with little flange 5 central through hole wall welded seals; Be evenly equipped with n through hole 4-3 that communicates with furnace chamber 6 on the outer outlet body 4-1 inclined-plane, present embodiment n is 8, is evenly equipped with 8 flange through hole 5-2s relative with through hole 4-3 on little flange 5.
In big flange 3 lower surfaces one side two ends being arranged is the long step trough 3-1 of circular arc, this groove bottom land one end communicates with the shoulder hole 3-2 of big flange 3 upper surfaces, this shoulder hole 3-2 can communicate with argon gas equipment by joint 7, and a flange through hole 5-2 on the little flange 5 is relative with long step trough 3-1.
When needs charge into argon gas in furnace chamber 6, pull up the piston 10 on the joint 7, charge into argon gas, argon gas enters in the furnace chamber 6 along shoulder hole 3-2, long step trough 3-1, the flange through hole 5-2 of little flange 5, the through hole 4-3 on the fluid dividing cover 4 on joint 7 centre holes, the big flange 3; If the argon gas abundance in the furnace chamber 6 when vacuum state meets the demands, can be turned off argon gas equipment, and piston 10 is got lodged on the joint 7.
The utility model is simple in structure, and cost is low, and makes argon gas circulation even, smooth and easy, improves the quality of silicon single crystal and has prolonged work-ing life of single crystal growing furnace.
Claims (8)
1. single crystal growing furnace, comprise rotational system, lower transmission system, described going up between rotational system and the lower transmission system is connected by big flange, on the big flange hole that communicates with gas apparatus is arranged, it is characterized in that: the described rotational system of going up comprises fluid dividing cover, described fluid dividing cover is connected with big end face of flange by little flange, described fluid dividing cover is positioned at the furnace chamber of lower transmission system, described fluid dividing cover is tubular structure, and at its edge, lower surface is the inclined-plane, through hole is arranged on the inclined-plane, and this through hole communicates with hole on furnace chamber and the big flange.
2. single crystal growing furnace according to claim 1 is characterized in that: described fluid dividing cover comprises outer outlet body, inner barrel, and described outer outlet body is that the lower end is the tubular structure on inclined-plane, and described inner barrel is a tubular structure, and it is positioned at outer outlet body; Described outer outlet body is affixed by its end, inclined-plane and the sealing of inner barrel end, and described outer outlet body upper end embeds little end face of flange and is connected with little flange seal; Described inner barrel upper end pass little flange center through hole and with little flange center through-hole wall sealing and fixing; Be evenly equipped with n through hole on the described outer outlet body inclined-plane, this through hole communicates with furnace chamber, is evenly equipped with n the flange through hole relative with outer outlet body inclined-plane through hole on the described little flange.
3. single crystal growing furnace according to claim 1 and 2, it is characterized in that: in big flange lower surface one side two ends being arranged is the long step trough of circular arc, this groove bottom land one end communicates with the shoulder hole of big flange upper surface, and a flange through hole on the described little flange is relative with long step trough.
4. single crystal growing furnace according to claim 3 is characterized in that: described little flange is connected with big flange by web member, and the side in the vat of described long step trough is embedded with a gasket, and the sealing pad contacts with little flange upper surface.
5. single crystal growing furnace according to claim 1 and 2 is characterized in that: end, described outer outlet body inclined-plane and the welding of inner barrel end are fixing, described outer outlet body and little flange welded seal, described inner barrel upper end and little flange center through-hole wall welded seal.
6. single crystal growing furnace according to claim 2 is characterized in that: the number n of through hole is 6～8 on the described outer outlet body inclined-plane.
7. single crystal growing furnace according to claim 6 is characterized in that: the number n preferred 8 of through hole on the described outer outlet body inclined-plane.
8. single crystal growing furnace according to claim 4 is characterized in that: described web member is a screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202309847U CN201512602U (en) | 2009-09-11 | 2009-09-11 | Single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202309847U CN201512602U (en) | 2009-09-11 | 2009-09-11 | Single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201512602U true CN201512602U (en) | 2010-06-23 |
Family
ID=42484010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202309847U Expired - Fee Related CN201512602U (en) | 2009-09-11 | 2009-09-11 | Single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201512602U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213185A (en) * | 2014-08-20 | 2014-12-17 | 浙江晶盛机电股份有限公司 | Argon branching device for monocrystalline silicon growing furnaces |
| CN104357908A (en) * | 2014-10-28 | 2015-02-18 | 西安建筑科技大学 | Crystal growing device and application thereof for being used as fluoro boron beryllium acid potassium crystal growing device |
-
2009
- 2009-09-11 CN CN2009202309847U patent/CN201512602U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213185A (en) * | 2014-08-20 | 2014-12-17 | 浙江晶盛机电股份有限公司 | Argon branching device for monocrystalline silicon growing furnaces |
| CN104357908A (en) * | 2014-10-28 | 2015-02-18 | 西安建筑科技大学 | Crystal growing device and application thereof for being used as fluoro boron beryllium acid potassium crystal growing device |
| CN104357908B (en) * | 2014-10-28 | 2017-07-28 | 西安建筑科技大学 | Crystal growth equipment and its application as fluoro boron potassjum beryllate crystal growth equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100623 Termination date: 20100911 |