CN201488957U - Nanowire microscopic structure and electrical property testing device - Google Patents
Nanowire microscopic structure and electrical property testing device Download PDFInfo
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- CN201488957U CN201488957U CN2009201070237U CN200920107023U CN201488957U CN 201488957 U CN201488957 U CN 201488957U CN 2009201070237 U CN2009201070237 U CN 2009201070237U CN 200920107023 U CN200920107023 U CN 200920107023U CN 201488957 U CN201488957 U CN 201488957U
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Abstract
The utility model relates to a nanowire microscopic structure and electrical property testing device. The existing testing device only can be applied to a scanning electron microscope and a light microscope to test electrical properties of nanowires, and can not obtain information of change of a nanowire microscopic structure. The nanowire microscopic structure and electrical property testing device is characterized in an amorphous layer is arranged on a substrate while a barrier layer is arranged under the substrate, the barrier layer and the middle portion of the substrate are etched to form windows, metal electrodes are arranged on the amorphous layer, nanowires are arranged among the metal electrodes, the nanowires and the metal electrodes are connected via metal connecting wires, the nanowires are located on the amorphous layer and opposite to positions right above the windows, and conducting wires are led out from the metal electrodes. The nanowire microscopic structure and electrical property testing device realizes electrifying the nanowires in a transmission electron microscope at a normal position, can lead people to observe high-resolution images from the best zone axis, realizes turning of the largest angle in an X direction and a Y direction, provides a nanowire normal position electrical property testing method, and has the advantages of reliable property, convenient mounting and simple structure.
Description
Technical field:
The utility model relates to a kind of microstructure and electrical performance testing device of nano wire, more particularly the measurement mechanism of original position real-time and dynamic nano wire microstructure and electric property correlativity under the "on" position.
Background technology:
Transmission electron microscope, scanning electron microscope and optical microscope play an important role in nano science and technical field, are the strongest instruments of research material structure and rerum natura.The applying nano line can be made the more micro-nano electron device of small scale, and nano wire is carrying critical functions such as transmission of Information, storage as the basic structural unit of various devices.Under the effect in outfield, research microstructural variation of nano wire and size effect are to Effect on Performance such as nano wire charge transport abilities in the device cell, and the practical applications such as density of this efficient to device, sensitivity, serviceable life, storage unit have very important significance.And at present, existing proving installation can only be applied in the test of in scanning electron microscope and the light microscopic nano wire being carried out electric property, can not get the information that the nano wire microstructure changes.For the nano wire that can come out by photoetching making, because the restriction of technology and material method can not be accomplished the littler and quality perfection of yardstick, and for the nano wire that grows out with methods such as any physical chemistry biologies, can not finish by photoetching technique.
The utility model content:
Problem at the prior art existence, the purpose of this utility model provides the device of in site measurement nano wire microstructure and electric property correlativity under a kind of "on" position, be applicable to transmission electron microscope, scanning electron microscope and optical microscope, and be applicable to the nano wire of making of any materials, method.Make the device of carrying nano wire earlier, on device, make metal electrode, again nano wire is transferred on this device, nano wire is fixed, be connected between the metal electrode, to the energising of this device, microstructure and the electricity of measuring nano wire transport performance, the variation of real time record nano wire microstructure and electric property in the sample for use in transmitted electron microscope bar.Change procedure by the imaging system original position in external world record nano wire discloses the microstructure change of nano wire and the correlativity that electricity transports performance from atomic scale.This device is applicable to the displaing microstructure observing and the electrical performance testing of the nano wire of stochastic distribution, and for the test of different nano wire electrical signal, uses different metal materials as the metal connecting line, can reach the requirement of reflection nano wire intrinsic electric property.
In order to realize top purpose, realize by the following technical solutions:
The device that research nano wire microstructure changes under the "on" position, it is characterized in that: be amorphous layer 3 above substrate 2, the below is restraining barrier 1, the center section of restraining barrier and substrate is etched away and forms window 4, being metal electrode 5 on amorphous layer, is nano wire 6 between the metal electrode, is connected by metal connecting line 7 between nano wire and the metal electrode, nano wire is positioned on the amorphous layer and faces toward directly over window 4, draws lead 8 on the metal electrode.
Further, described amorphous layer is the film that can allow electron beam penetrate, and the thickness of film is between 30nm-300nm, and the restraining barrier is the film that stops corrosion window 4 substrate in addition, and the thickness of film is between 30nm-300nm.
Prepare the method for the device that research nano wire microstructure changes under the above-mentioned "on" position, may further comprise the steps:
1. prepare amorphous layer 3 above substrate 2, the below prepares restraining barrier 1, and the center section that corrodes restraining barrier and substrate forms final window afterwards.
Further, described corrosion was divided into for two steps, and a step is gluing, photoetching, erodes the restraining barrier, and a corrosive liquid corrosion barrier layer is formed for corroding the window of substrate, and another step is that corrosion penetrates substrate, and corrosive liquid only corrodes substrate, forms final window.
2. described metal electrode electric conductivity is good, be produced on the amorphous layer by methods such as photoetching, the metal connecting line that connects nano wire and metal electrode is the good material of electric conductivity, is positioned at the top of nano wire and metal electrode, makes by methods such as focused ion beam deposition.
3. between metal electrode, prepare nano wire, nano wire is connected with the metal connecting line with electrode.
Described nano wire prepares for using several different methods such as physical chemistry biology, nano wire can be detected electrical signal, and can in transmission electron microscope, obtain the high resoluting information of atomic scale in situ, the length of nano wire can be chosen arbitrarily, and arrangement mode can be the arrangement of any direction.
4. metal electrode is drawn with lead, be connected on the outside testing tool, insert in transmission electron microscope, scanning electron microscope or the light microscopic.
The utlity model has following advantage:
1. the utility model has carried out special structure design to the device of carrying nano wire in the transmission electron microscope, be implemented in the transmission electron microscope and in situ nano wire powered up, zone axis observation full resolution pricture from the best, realize X, verting of Y both direction maximum angle provides a kind of nano-thread in-situ electric performance test method, has dependable performance, easy for installation, characteristic of simple structure.
2. the utility model is applied to the electric property research of nano-tube/nano-wire, applied range, and research object is abundant.For any nano wire, all can carry out the home position observation monitoring of electrical property to it by this kind method.
Description of drawings
Fig. 1 nano-wire devices front view
The upward view of Fig. 2 Fig. 1
The vertical view of Fig. 3 Fig. 1
The voltage-current curve of Fig. 4 embodiment
1, restraining barrier; 2, substrate; 3, amorphous layer; 4, the window of etching; 5, metal electrode; 6, nano wire; 7, metal connecting line; 8, lead
Embodiment:
The utility model carries out original position energising test by to the device energising to nano wire, implements as follows:
Concrete, the device of carrying nano wire is followed successively by from top to bottom: use SiO
2As restraining barrier 1, silicon chip is as substrate 2, and SiN is as amorphous layer 3, and what use on amorphous layer 3 is that gold is as metal electrode 5, SiO
2What restraining barrier and silicon chip were etched formation is window 4, use SiC nano wire 6 between the gold electrode, the SiC nano wire directly over window 4, between nano wire 6 and the metal electrode 5 with metal connecting line 7 connect, fixing, use be that platinum metal material is as metal connecting line 7.
The method of making and testing is specially: by the method growth SiO of PECVD (plasma chemical vapor deposition)
2Film, thickness are 0.5 μ m; Silicon wafer thickness is 200 μ m, and diameter is 2 inches, and resistivity is 5 Ω .cm, and through twin polishing, the crystal orientation is＜100 〉; By the method growth SiN film of PECVD, thickness is 0.1 μ m.
Make two 2.5 inches mask blanks, gluing below silicon chip, photoetching is formed for the window of etching, falls the interior SiO of window with rare HF solution corrosion
2, remove photoresist.Put into the EDP corrosive liquid, the temperature of solution is controlled at 80-100 ℃, through more than 3 hours etching, takes out sample and cleans more than three times in acetone.Gluing above SiN again, the electrode pattern that photoetching forms the top plates one deck gold electrode thereon, removes photoresist.The SiC nano wire that growth is good is scattered in the acetone soln, draw a spot of SiC nano wire with dropper, drop in the gold electrode zone, find the SiC nano wire on the SiN film, the SiC nano wire is connected with platinum with gold electrode with the method for FIB (focused ion beam deposition).
Ready-made silicon chip is cut into the little grid of square of 2.15*2.15mm, under light microscopic, gold electrode is drawn with Herba Anoectochili roxburghii, Herba Anoectochili roxburghii is welded on the sample for use in transmitted electron microscope bar that has the energising function again with press welder.Device is carried out the original position energising, and by high-resolution original position imaging system record whole variation process, the electricity that measures nano wire under "on" position transports performance and microstructural correlativity.
Experimental result: the scope that on-load voltage in transmission electron microscope, voltage load has been measured the SiC nano wire of a length about 1 μ m in the interval of-0.1-0.1V, and voltage-current curve is illustrated in fig. 4 shown below.
Claims (1)
1. the microstructure of a nano wire and electrical performance testing device is characterized in that:
It above substrate amorphous layer, the below is the restraining barrier, the center section of restraining barrier and substrate is etched away the formation window, it on amorphous layer metal electrode, it between the metal electrode nano wire, connected by the metal connecting line between nano wire and the metal electrode, nano wire is positioned on the amorphous layer and faces toward directly over window, draws lead on the metal electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201070237U CN201488957U (en) | 2009-05-15 | 2009-05-15 | Nanowire microscopic structure and electrical property testing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201070237U CN201488957U (en) | 2009-05-15 | 2009-05-15 | Nanowire microscopic structure and electrical property testing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201488957U true CN201488957U (en) | 2010-05-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009201070237U Expired - Fee Related CN201488957U (en) | 2009-05-15 | 2009-05-15 | Nanowire microscopic structure and electrical property testing device |
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| CN (1) | CN201488957U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102539462A (en) * | 2011-11-11 | 2012-07-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ characterization method for nano wires |
| CN105140307A (en) * | 2015-08-06 | 2015-12-09 | 南京大学 | Nanomaterial in-situ photoelectric test chip of transmission electron microscope, chip fabrication method and application of chip |
| WO2019090797A1 (en) * | 2017-11-09 | 2019-05-16 | 大连理工大学 | Self-healing method for broken silicon carbide monocrystalline nanowire |
-
2009
- 2009-05-15 CN CN2009201070237U patent/CN201488957U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102539462A (en) * | 2011-11-11 | 2012-07-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ characterization method for nano wires |
| CN102539462B (en) * | 2011-11-11 | 2014-04-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | In-situ characterization method for nano wires |
| CN105140307A (en) * | 2015-08-06 | 2015-12-09 | 南京大学 | Nanomaterial in-situ photoelectric test chip of transmission electron microscope, chip fabrication method and application of chip |
| CN105140307B (en) * | 2015-08-06 | 2017-04-26 | 南京大学 | Nanomaterial in-situ photoelectric test chip of transmission electron microscope, chip fabrication method and application of chip |
| WO2019090797A1 (en) * | 2017-11-09 | 2019-05-16 | 大连理工大学 | Self-healing method for broken silicon carbide monocrystalline nanowire |
| US10942099B2 (en) | 2017-11-09 | 2021-03-09 | Dalian University Of Technology | Self-healing method for fractured SiC single crystal nanowires |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 Termination date: 20120515 |