CN201421443Y - System for determining contents of phosphorus and boron in polysilicon - Google Patents
System for determining contents of phosphorus and boron in polysilicon Download PDFInfo
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- CN201421443Y CN201421443Y CN200920156146XU CN200920156146U CN201421443Y CN 201421443 Y CN201421443 Y CN 201421443Y CN 200920156146X U CN200920156146X U CN 200920156146XU CN 200920156146 U CN200920156146 U CN 200920156146U CN 201421443 Y CN201421443 Y CN 201421443Y
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Abstract
An embodiment of the utility model discloses a system for determining contents of phosphorus and boron in polysilicon, which comprises a sample single crystal silicon rod manufacturing device, a conduction type determining device, a resistivity determining device and a phosphorus and boron content counter. The sample single crystal silicon rod manufacturing device is used for manufacturing samplesingle crystal silicon, the conduction type determining device is used for determining conduction types of the head portion of the single crystal silicon rod and set positions in the same, the resistivity determining device is used for determining resistivity of the head portion of the single crystal silicon rod and set positions in the same, and the phosphorus and boron content counter is connected with the conduction type determining device and the resistivity determining device and is used for calculating contents of phosphorus and boron according to determined conduction types and resistivity. According to the determined conduction types and resistivity of the head portion of the sample single crystal silicon rod and the set positions of the same, by utilizing segregation coefficient of phosphorus and boron and difference calculation relational expression of contents of phosphorus and boron, contents of phosphorus and boron in single crystal silicon can be obtained through the phosphorus and boron content counter, thereby saving determining equipment and time of contents of phosphorus and boron in polysilicon.
Description
Technical field
The utility model relates to semiconductor applications, more particularly, relates to measure the system of the content of phosphorus and boron in the polysilicon.
Background technology
In semiconductor applications, usually need the boron of polysilicon and the content of phosphorus are measured, the method of using is at present, the polysilicon that will measure is drawn into the sample silicon single crystal rod earlier, measure the monocrystalline silicon piece sample of cutting the about 2mm of a slice thickness at least after the resistivity of position, 5 times of melting zones of sample silicon single crystal rod head and the P/N type herein then, use the boron phosphorus value of low temperature fourier-transform infrared linear light spectrometer or low temperature Fourier photoluminescence instrument measuring samples at last.
Adopt such scheme need utilize low temperature fourier-transform infrared linear light spectrometer or low temperature Fourier photoluminescence instrument, this equipment price costliness, use and maintenance cost is very high.
The utility model content
In view of this, the utility model provides the system of boron phosphorus content in a kind of cheap mensuration polysilicon.
For achieving the above object, the utility model provides following technical scheme:
A kind of system that measures polysilicon boron and phosphorus content comprises: the sample silicon single crystal rod that is used for perparation of specimen monocrystalline silicon is made device; Be used to measure the conduction type determinator of the conduction type of described silicon single crystal rod desired location; Be used to measure the determination of resistivity device of the resistivity of the described predeterminated position of described silicon single crystal rod;
With the boron phosphorus content counter that described conduction type determinator links to each other with the determination of resistivity device, be used for the content that calculates described polysilicon boron and phosphorus according to the conduction type and the resistivity of mensuration.
Preferably, to make device be monocrystalline silicon region melting and pulling device to described sample silicon single crystal rod.
Preferably, described conduction type determinator is a thermoprobe method conduction type determinator.
Preferably, described conduction type determinator is cold sonde method conduction type determinator.
Preferably, described conduction type determinator is a thermoelectric method conduction type determinator.
Preferably, described determination of resistivity device is a four point probe determination of resistivity device.
Preferably, described phosphorus boron cubage device comprises: be used to obtain described conduction type and resistivity number
According to data acquisition facility;
Be used for calculation element that the data of the acquisition of described deriving means are calculated by computing formula;
Be used to export the output unit of result of calculation.
Preferably, the conduction type that obtains of described data acquisition facility comprises the conduction type of described sample silicon single crystal rod head conduction type and described sample silicon single crystal rod setting position;
The resistivity of obtaining comprises that described sample silicon single crystal rod head resistivity and described sample silicon single crystal rod establish
The resistivity at allocation place.
Preferably, described desired location is apart from place, at least 5 times of melting zones of sample silicon single crystal rod head.
Preferably, the computing formula of described calculation element comprises:
The residual quantity content formula of phosphorus: P=10^ ((LOG (R)-4.87815)/-0.96262), wherein, P is the residual quantity content of phosphorus, R is the resistivity of the sample silicon single crystal rod desired location that records;
The residual quantity content formula of boron: B=10^ ((LOG (R)-5.38454)/-0.97857), wherein, B is the residual quantity content of boron;
The calculation relational expression of the segregation coefficient of the segregation coefficient of boron and boron residual quantity cubage relational expression and phosphorus and phosphorus residual quantity content.
From above-mentioned technical scheme as can be seen, the utility model embodiment is by making the sample silicon single crystal rod with the sample polysilicon earlier, record the conduction type and the resistivity of desired location in the head of sample silicon single crystal rod and the sample silicon single crystal rod then, utilize segregation coefficient and the segregation coefficient of boron residual quantity cubage relational expression and phosphorus and the calculation relational expression of phosphorus residual quantity content of boron, make the content that can draw boron and phosphorus in the monocrystalline silicon by boron phosphorus content counter, thereby also just drawn the phosphorus and the boron content of polysilicon.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation that the boron phosphorus content is measured system in the utility model embodiment polysilicon.
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the utility model protection.
The utility model embodiment discloses a kind of polysilicon boron phosphorus content and has measured system, to be implemented in the boron phosphorus content of conveniently measuring polysilicon under the situation of not using low temperature fourier-transform infrared linear light spectrometer.
As shown in Figure 1, the system of the utility model embodiment has comprised that monocrystalline silicon makes device, conduction type determinator, determination of resistivity device and boron phosphorus content counter.
When measuring the boron phosphorus content of polysilicon, at first to get the polysilicon sample of φ 20mm * 10cm.Can use monocrystalline silicon to make device, with zone melting furnace described polysilicon sample is drawn into the sample silicon single crystal rod under argon gas atmosphere, the specification of sample silicon single crystal rod is for about 18-20cm is long, diameter is 8mm.
Then, can use the conduction type instrument to measure the head of described sample silicon single crystal rod and apart from the conduction type at head 15cm place.Recording the result is a kind of in following three kinds of situations for conduction type:
When the head of described sample silicon single crystal rod is the N type, also be the N type apart from head 15cm place;
When the head of described sample silicon single crystal rod is the P type, be the N type apart from head 15cm place;
When the head of described sample silicon single crystal rod is the P type, also be the P type apart from head 15cm place.
Then, can use the four point probe resistivity meter to measure the head of described sample silicon single crystal rod respectively and apart from the resistivity at head 15cm place.
Described phosphorus boron cubage device comprises the boron phosphorus residual quantity cubage relational expression of calculating the formula of the residual quantity content of phosphorus and boron, drawing according to boron phosphorus segregation coefficient according to resistivity.Wherein:
The formula that calculates the residual quantity content of phosphorus according to resistivity is:
P＝10^((LOG(R)-4.87815)/-0.96262)。
Comprise that also the formula that calculates the residual quantity content of boron according to resistivity is:
B＝10^((LOG(R)-5.38454)/-0.97857)。
What the R in above-mentioned two formula represented is resistivity, and P represents the residual quantity content of phosphorus, and B represents the residual quantity content of boron.Owing to be the head that calculates respectively and apart from the residual quantity content at head 15cm place, so can draw four data, be respectively: P1 is that residual quantity content, the P2 of head phosphorus is that the residual quantity content apart from head 15cm place phosphorus, residual quantity content, the B2 that B1 is head boron are the residual quantity content apart from head 15cm place boron.
Because when being melt into sample monocrystalline silicon with the sample multi-crystal silicon area, the segregation coefficient of phosphorus is 0.35, the segregation coefficient of boron is 0.8.All approximate the content of phosphorus and boron in the sample polysilicon at the content of at least 5 times of melting zones of distance sample silicon single crystal rod head place's phosphorus and boron.So:
When described sample silicon single crystal rod head is the N type, when also being the N type apart from head 15cm place:
P1=0.35 (phosphorus content)-0.8 (boron content)
P2=phosphorus content-boron content
When the head of described sample silicon single crystal rod is the P type, when being the N type apart from head 15cm place:
B1=0.8 (boron content)-0.35 (phosphorus content)
P2=phosphorus content-boron content
When described sample silicon single crystal rod head is the P type, when also being the P type apart from head 15cm place:
B1=0.8 (boron content)-0.35 (phosphorus content)
B2=boron content-phosphorus content
Because the given data that P1, P2 all calculate for the formula by the residual quantity content of described phosphorus, so the calculation relational expression that is made of above-mentioned linear equation in two unknowns can draw the content of phosphorus and boron.
In another embodiment, the conduction type determinator in the foregoing description can also be thermoprobe method or cold sonde method or thermoelectric method conduction type instrument.
In sum, the utility model is by working sample silicon single crystal rod head respectively with apart from the conduction type and the resistivity at head 15cm place, draw in the sample silicon single crystal rod head and apart from the residual quantity content of head 15cm place's phosphorus or boron.Utilize described sample silicon single crystal rod head then and calculate the phosphorus of monocrystalline silicon and the total content of boron, thereby release the phosphorus of polysilicon and the total content of boron apart from the segregation coefficient at head 15cm place and the relational expression of residual quantity content.The utility model compared with prior art, saved and used expensive low temperature fourier-transform infrared linear light spectrometer or the low temperature Fourier photoluminescence instrument step that section is analyzed to the sample silicon single crystal rod, saved equipment input, thereby saved a large amount of cost of determination and maintenance cost.In addition, low temperature fourier-transform infrared linear light spectrometer is to the process need a few hours of sample silicon single crystal rod section analysis.By contrast, minute of the present utility model only needs tens minutes, has saved a large amount of time, for enterprise has saved time cost.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the utility model.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined herein General Principle can realize under the situation that does not break away from spirit or scope of the present utility model in other embodiments.Therefore, the utility model will can not be restricted to these embodiment shown in this article, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (10)
1, a kind of system that measures polysilicon boron and phosphorus content is characterized in that, comprising:
The sample silicon single crystal rod that is used for perparation of specimen monocrystalline silicon is made device;
Be used for measuring the conduction type determinator of the conduction type of described silicon single crystal rod head and described silicon single crystal rod desired location;
Be used for measuring the determination of resistivity device of the resistivity of described silicon single crystal rod head and described silicon single crystal rod desired location;
With the boron phosphorus content counter that described conduction type determinator links to each other with the determination of resistivity device, be used for the content that calculates described polysilicon boron and phosphorus according to the conduction type and the resistivity of mensuration.
According to the described system of claim 1, it is characterized in that 2, it is monocrystalline silicon region melting and pulling device that described sample silicon single crystal rod is made device.
According to the described system of claim 1, it is characterized in that 3, described conduction type determinator is a thermoprobe method conduction type determinator.
According to the described system of claim 1, it is characterized in that 4, described conduction type determinator is cold sonde method conduction type determinator.
According to the described system of claim 1, it is characterized in that 5, described conduction type determinator is a thermoelectric method conduction type determinator.
According to the described system of claim 1, it is characterized in that 6, described determination of resistivity device is a four point probe determination of resistivity device.
According to the described system of claim 1, it is characterized in that 7, described phosphorus boron cubage device comprises:
Be used to obtain the data acquisition facility of described conduction type and resistivity data;
Be used for calculation element that the data of the acquisition of described deriving means are calculated by computing formula;
Be used to export the output unit of result of calculation.
8, according to the described system of claim 1, it is characterized in that:
The conduction type that described data acquisition facility obtains comprises the conduction type of described sample silicon single crystal rod head conduction type and described sample silicon single crystal rod setting position;
The resistivity of obtaining comprises the resistivity of described sample silicon single crystal rod head resistivity and described sample silicon single crystal rod setting position.
According to claims 8 described systems, it is characterized in that 9, described desired location is apart from position, at least 5 times of melting zones of sample silicon single crystal rod head.
According to the described system of claim 1, it is characterized in that 10, the computing formula of described calculation element comprises:
The residual quantity content formula of phosphorus: P=10^ ((LOG (R)-4.87815)/-0.96262), wherein, P is the residual quantity content of phosphorus, R is the resistivity of the sample silicon single crystal rod desired location that records;
The residual quantity content formula of boron: B=10^ ((LOG (R)-5.38454)/-0.97857), wherein, B is the residual quantity content of boron;
The calculation relational expression of the segregation coefficient of the segregation coefficient of boron and boron residual quantity cubage relational expression and phosphorus and phosphorus residual quantity content.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200920156146XU CN201421443Y (en) | 2009-06-15 | 2009-06-15 | System for determining contents of phosphorus and boron in polysilicon |
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| CN200920156146XU CN201421443Y (en) | 2009-06-15 | 2009-06-15 | System for determining contents of phosphorus and boron in polysilicon |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906659A (en) * | 2010-08-18 | 2010-12-08 | 高佳太阳能股份有限公司 | Doping method of monocrystalline silicon for photovoltaics |
| CN105425135A (en) * | 2015-12-25 | 2016-03-23 | 江苏盎华光伏工程技术研究中心有限公司 | Polysilicon material intelligent detection and classified transport device and method |
| CN115290974A (en) * | 2022-07-21 | 2022-11-04 | 扬州方通电子材料科技有限公司 | Method and device for measuring resistivity of silicon single crystal rod |
-
2009
- 2009-06-15 CN CN200920156146XU patent/CN201421443Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906659A (en) * | 2010-08-18 | 2010-12-08 | 高佳太阳能股份有限公司 | Doping method of monocrystalline silicon for photovoltaics |
| CN105425135A (en) * | 2015-12-25 | 2016-03-23 | 江苏盎华光伏工程技术研究中心有限公司 | Polysilicon material intelligent detection and classified transport device and method |
| CN115290974A (en) * | 2022-07-21 | 2022-11-04 | 扬州方通电子材料科技有限公司 | Method and device for measuring resistivity of silicon single crystal rod |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20151224 Address after: 832000 Shihezi Economic Development Zone, the Xinjiang Uygur Autonomous Region Province, the new chemical materials Industrial Park weft Road, six Patentee after: Xinjiang Daqo New Energy Co.,Ltd. Address before: 666 No. 404000 Chongqing District of Wanzhou City long road Patentee before: Chongqing Daqo New Energy Co., Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20100310 |
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| CX01 | Expiry of patent term |