CN201408753Y - semiconductor chassis - Google Patents

semiconductor chassis Download PDF

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Publication number
CN201408753Y
CN201408753Y CN2009200902734U CN200920090273U CN201408753Y CN 201408753 Y CN201408753 Y CN 201408753Y CN 2009200902734 U CN2009200902734 U CN 2009200902734U CN 200920090273 U CN200920090273 U CN 200920090273U CN 201408753 Y CN201408753 Y CN 201408753Y
Authority
CN
China
Prior art keywords
semiconductor
chassis
component
utility
pit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009200902734U
Other languages
Chinese (zh)
Inventor
陈建民
陈建卫
陈磊
陈燕青
郭晶
惠小青
刘栓红
赵丽萍
张林冲
张甜甜
张文涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Henan Hongchang Electronics Co Ltd
Original Assignee
Henan Hongchang Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Henan Hongchang Electronics Co Ltd filed Critical Henan Hongchang Electronics Co Ltd
Priority to CN2009200902734U priority Critical patent/CN201408753Y/en
Application granted granted Critical
Publication of CN201408753Y publication Critical patent/CN201408753Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model relates to a component for making an integral semiconductor piece, in particular to a semiconductor chassis. The semiconductor chassis comprises a semiconductor chassis body that isprovided with one surface contacted with the semiconductor component. The semiconductor chassis is characterized in that one surface of the semiconductor chassis body contacted with the semiconductorcomponent is provided with a concave pit that is square, circular or hexagonal. The integral semiconductor piece made from the chassis has good contact effect between the chassis and the component andreduces the entire damage rate.

Description

The semiconductor chassis
Technical field
The utility model relates to a kind of parts of making whole of semiconductor, relates in particular to a kind of semiconductor chassis.
Background technology
Whole of conventional semiconductor is such: with the ceramics of flat board as the chassis, semiconductor element is welded on the chassis, owing to, tend to occur the situation of semiconductor element not prison welding on the chassis, influenced the performance of whole of semiconductor as the plane smoother of the ceramics on chassis.
Summary of the invention
The purpose of this utility model is exactly at above-mentioned shortcoming, provides a kind of and can make the firmly semiconductor chassis of welding of semiconductor element and chassis.
The technical solution of the utility model is achieved in that the semiconductor chassis, comprise the semiconductor chassis body, the semiconductor chassis body has the one side that contacts with semiconductor element, it is characterized in that: the one side that the semiconductor chassis body contacts with semiconductor element has pit, and such pit is square, circular or hexagonal.
The beneficial effects of the utility model are: whole of the semiconductor that uses such chassis to make has the chassis and contacts good effect with components and parts, reduces whole spoilage.
Description of drawings
Fig. 1 is the structural representation on the utility model semiconductor chassis
Wherein, 1, semiconductor chassis body 2, pit
Embodiment
The utility model will be further described below in conjunction with accompanying drawing.
The semiconductor chassis comprises semiconductor chassis body 1, has the one side that contacts with semiconductor element, and as shown in Figure 1, the one side that semiconductor chassis body 1 contacts with semiconductor element has pit 2.
According to different situations, such pit is square, circular or hexagonal.
When using the semiconductor chassis body to make whole of semiconductor, semiconductor element can be placed in pit 2 places, can make the semiconductor element difficult drop-off, thereby improve whole performance.

Claims (2)

1, semiconductor chassis comprises the semiconductor chassis body, and the semiconductor chassis body has the one side that contacts with semiconductor element, it is characterized in that: the one side that the semiconductor chassis body contacts with semiconductor element has pit.
2, semiconductor according to claim 1 chassis is characterized in that: described pit is square, circular or hexagonal.
CN2009200902734U 2009-05-15 2009-05-15 semiconductor chassis Expired - Fee Related CN201408753Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009200902734U CN201408753Y (en) 2009-05-15 2009-05-15 semiconductor chassis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009200902734U CN201408753Y (en) 2009-05-15 2009-05-15 semiconductor chassis

Publications (1)

Publication Number Publication Date
CN201408753Y true CN201408753Y (en) 2010-02-17

Family

ID=41679699

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009200902734U Expired - Fee Related CN201408753Y (en) 2009-05-15 2009-05-15 semiconductor chassis

Country Status (1)

Country Link
CN (1) CN201408753Y (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165588A (en) * 2013-02-27 2013-06-19 西安永电电气有限责任公司 Insulated gate bipolar transistor (IGBT) module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103165588A (en) * 2013-02-27 2013-06-19 西安永电电气有限责任公司 Insulated gate bipolar transistor (IGBT) module

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100217

Termination date: 20110515