CN201408749Y - Semiconductor crystal block - Google Patents

Semiconductor crystal block Download PDF

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Publication number
CN201408749Y
CN201408749Y CN2009200902787U CN200920090278U CN201408749Y CN 201408749 Y CN201408749 Y CN 201408749Y CN 2009200902787 U CN2009200902787 U CN 2009200902787U CN 200920090278 U CN200920090278 U CN 200920090278U CN 201408749 Y CN201408749 Y CN 201408749Y
Authority
CN
China
Prior art keywords
semiconductor crystal
crystal block
semiconductor
pedestal
block body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009200902787U
Other languages
Chinese (zh)
Inventor
陈建民
陈建卫
陈磊
陈燕青
郭晶
惠小青
刘栓红
赵丽萍
张林冲
张甜甜
张文涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Henan Hongchang Electronics Co Ltd
Original Assignee
Henan Hongchang Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Henan Hongchang Electronics Co Ltd filed Critical Henan Hongchang Electronics Co Ltd
Priority to CN2009200902787U priority Critical patent/CN201408749Y/en
Application granted granted Critical
Publication of CN201408749Y publication Critical patent/CN201408749Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The utility model relates to semiconductor element, in particular to a semiconductor crystal block. The semiconductor crystal block comprises a semiconductor crystal block body, wherein the lower partof the semiconductor crystal block body is provided with a base and the base is provided with an outer edge projecting outwards. A semiconductor element made from the semiconductor crystal block hasthe effect of firm welding.

Description

A kind of semiconductor crystal block
Technical field
The utility model relates to a kind of semi-conductive parts, relates in particular to a kind of semiconductor crystal block.
Background technology
The conventional semiconductor crystal block is a square shape, columned, and promptly the semiconductor crystal block has identical rank street area up and down, occurs the phenomenon of not prison welding when such crystal block is welded on the base plate easily, has influenced semi-conductive serviceability and effect.
Summary of the invention
The purpose of this utility model is to provide a kind of semiconductor crystal block that can firm welding.
The technical solution of the utility model is achieved in that the semiconductor crystal block, comprises the semiconductor die block body, and the bottom of semiconductor die block body has pedestal, and pedestal has the outer of outside protrusion.
Described outstanding outer is the outer protrusion of a side, bilateral or four side direction.
The beneficial effects of the utility model are: the semiconductor element made from such semiconductor crystal block has the effect of firm welding.
Description of drawings
Fig. 1 is the structural representation of the utility model semiconductor crystal block
Wherein, 1, semiconductor die block body 2, pedestal 3, outer
Embodiment
The utility model will be further described below in conjunction with accompanying drawing.
The semiconductor crystal block comprises semiconductor die block body 1, and the bottom of semiconductor die block body 1 has pedestal 2, and pedestal 2 has the outer 2 of outside protrusion.
Described outstanding outer is the outer protrusion of a side, bilateral or four side direction.

Claims (4)

1, semiconductor crystal block comprises the semiconductor die block body, it is characterized in that: the bottom of semiconductor die block body has pedestal, and pedestal has the outer of outside protrusion.
2, semiconductor crystal block according to claim 1 is characterized in that: described outstanding outer is the outer protrusion of a side direction.
3, semiconductor crystal block according to claim 1 is characterized in that: described outstanding outer is that bilateral outwards protrudes.
4, semiconductor crystal block according to claim 1 is characterized in that: described outstanding outer is the outer protrusions of four side direction.
CN2009200902787U 2009-05-15 2009-05-15 Semiconductor crystal block Expired - Fee Related CN201408749Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009200902787U CN201408749Y (en) 2009-05-15 2009-05-15 Semiconductor crystal block

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009200902787U CN201408749Y (en) 2009-05-15 2009-05-15 Semiconductor crystal block

Publications (1)

Publication Number Publication Date
CN201408749Y true CN201408749Y (en) 2010-02-17

Family

ID=41679695

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009200902787U Expired - Fee Related CN201408749Y (en) 2009-05-15 2009-05-15 Semiconductor crystal block

Country Status (1)

Country Link
CN (1) CN201408749Y (en)

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100217

Termination date: 20110515