CN201408749Y - Semiconductor crystal block - Google Patents
Semiconductor crystal block Download PDFInfo
- Publication number
- CN201408749Y CN201408749Y CN2009200902787U CN200920090278U CN201408749Y CN 201408749 Y CN201408749 Y CN 201408749Y CN 2009200902787 U CN2009200902787 U CN 2009200902787U CN 200920090278 U CN200920090278 U CN 200920090278U CN 201408749 Y CN201408749 Y CN 201408749Y
- Authority
- CN
- China
- Prior art keywords
- semiconductor crystal
- crystal block
- semiconductor
- pedestal
- block body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to semiconductor element, in particular to a semiconductor crystal block. The semiconductor crystal block comprises a semiconductor crystal block body, wherein the lower partof the semiconductor crystal block body is provided with a base and the base is provided with an outer edge projecting outwards. A semiconductor element made from the semiconductor crystal block hasthe effect of firm welding.
Description
Technical field
The utility model relates to a kind of semi-conductive parts, relates in particular to a kind of semiconductor crystal block.
Background technology
The conventional semiconductor crystal block is a square shape, columned, and promptly the semiconductor crystal block has identical rank street area up and down, occurs the phenomenon of not prison welding when such crystal block is welded on the base plate easily, has influenced semi-conductive serviceability and effect.
Summary of the invention
The purpose of this utility model is to provide a kind of semiconductor crystal block that can firm welding.
The technical solution of the utility model is achieved in that the semiconductor crystal block, comprises the semiconductor die block body, and the bottom of semiconductor die block body has pedestal, and pedestal has the outer of outside protrusion.
Described outstanding outer is the outer protrusion of a side, bilateral or four side direction.
The beneficial effects of the utility model are: the semiconductor element made from such semiconductor crystal block has the effect of firm welding.
Description of drawings
Fig. 1 is the structural representation of the utility model semiconductor crystal block
Wherein, 1, semiconductor die block body 2, pedestal 3, outer
Embodiment
The utility model will be further described below in conjunction with accompanying drawing.
The semiconductor crystal block comprises semiconductor die block body 1, and the bottom of semiconductor die block body 1 has pedestal 2, and pedestal 2 has the outer 2 of outside protrusion.
Described outstanding outer is the outer protrusion of a side, bilateral or four side direction.
Claims (4)
1, semiconductor crystal block comprises the semiconductor die block body, it is characterized in that: the bottom of semiconductor die block body has pedestal, and pedestal has the outer of outside protrusion.
2, semiconductor crystal block according to claim 1 is characterized in that: described outstanding outer is the outer protrusion of a side direction.
3, semiconductor crystal block according to claim 1 is characterized in that: described outstanding outer is that bilateral outwards protrudes.
4, semiconductor crystal block according to claim 1 is characterized in that: described outstanding outer is the outer protrusions of four side direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200902787U CN201408749Y (en) | 2009-05-15 | 2009-05-15 | Semiconductor crystal block |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200902787U CN201408749Y (en) | 2009-05-15 | 2009-05-15 | Semiconductor crystal block |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201408749Y true CN201408749Y (en) | 2010-02-17 |
Family
ID=41679695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200902787U Expired - Fee Related CN201408749Y (en) | 2009-05-15 | 2009-05-15 | Semiconductor crystal block |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201408749Y (en) |
-
2009
- 2009-05-15 CN CN2009200902787U patent/CN201408749Y/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100217 Termination date: 20110515 |