CN201311546Y - Photo mask - Google Patents
Photo mask Download PDFInfo
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- CN201311546Y CN201311546Y CNU2008201554565U CN200820155456U CN201311546Y CN 201311546 Y CN201311546 Y CN 201311546Y CN U2008201554565 U CNU2008201554565 U CN U2008201554565U CN 200820155456 U CN200820155456 U CN 200820155456U CN 201311546 Y CN201311546 Y CN 201311546Y
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- photomask
- light
- solvent
- framework
- photo mask
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Abstract
Disclosed is a photo mask, which comprises a frame which is connected with a light-permeable substrate of the photo mask to form a sealed space. Further, the sealed space is full of a solvent which can dissolve defective particles without corroding a photo mask pattern, the photo mask pattern is immersed in the solvent, and the frame includes a light-permeable member corresponding to the photo mask pattern. The photo mask with comparatively long service life can avoid producing defective particles on the surface.
Description
Technical field
The utility model relates to field of semiconductor manufacture, particularly the photomask in the photoetching process.
Background technology
Along with the improvement of semiconductor fabrication, device size is also to the deep-submicron development, and is also more and more stricter to the requirement of device quality precision.Wherein, to the device quality precision what have the greatest impact is exactly the quality of photoetching.Photoetching is exactly with the process of the figure transfer on the photomask to the wafer in simple terms.Thereby the quality of photomask also directly affects the quality of photoetching.
Main photomask types has binary intensity photomask and attenuation type phase displacement photomask at present.The manufacture method of traditional binary intensity photomask is exemplified below: with the graph data input exposure sources of photomask; The quartz glass substrate (general designation " substrate ") that provides a slice to be coated with light tight chromium metal film; On substrate, be coated with positive photoresistance,, utilize exposure sources that substrate is exposed, form exposure figure according to graph data; Carry out development step, the photoresistance of exposure region is removed in this step; Utilize the photoresistance that is not removed to do protection, with dry etching the chromium film is carried out etching, the chromium metal film that will have exposure figure removes, and exposure figure is transferred on the chromium metal film; Again photoresistance is removed, just on substrate, formed photomask pattern.Clean again afterwards, fault detection etc., and on substrate a bonding framework, bonding one deck covers after the light transmission film of photomask pattern on framework, has just finished the making of binary intensity photomask.At for example application number is to find more relevant therewith information in 200510008205.5 the Chinese patent application.
And the substrate of attenuation type phase displacement photomask generally comprises quartz glass substrate, is plated on the substrate as the molybdenum silicide (MoSi) of phase shift layer and is plated on lighttight chromium metal level on the phase shift layer.In manufacture process; with binary photomask equally through before described step after forming figure on the lighttight chromium metal film; utilize the chromium metal film that is not removed to do protection and carry out dry etching; remove the phase shift layer; again the chromium metal film is removed, thereby on substrate, formed figure with phase shift decay.Clean again afterwards, fault detection etc., and on the graphics field of substrate a bonding support frame, bonding one deck covers after the light transmission film of phase shift decay figure on support frame, has just finished the making of attenuation type phase displacement photomask.
Yet, be applied to find after photoetching a period of time have the lower defect particles of transmittance to be deposited on the photomask surface at photomask, the transmittance in influence exposure time, thus influence photoetching quality.
The utility model content
The utility model provides a kind of photomask, solves owing to defect particles is deposited on the problem that the photomask surface influences photoetching quality.
For addressing the above problem, the utility model provides a kind of photomask, comprise: be connected to form the framework of confined space with the light-transparent substrate of photomask, described confined space is full of the solubilized defect particles and can not corrodes the solvent of photomask pattern, described photomask pattern is immersed among the described solvent, and described framework comprises the light transparent member that relative photomask pattern is provided with.
Compared with prior art, above-mentioned disclosed photomask has the following advantages: be connected to form confined space by framework and light-transparent substrate, described confined space is full of the solubilized defect particles and can not corrodes the solvent of photomask pattern, and described photomask pattern is immersed among the described solvent, thereby prevents that the photomask surface from producing the defect particles deposition.And, because the photomask surface can not produce the defect particles deposition, thereby prolonged the serviceable life of photomask, reduced and changed the required cost of photomask.
Description of drawings
Fig. 1 is a kind of embodiment figure of the utility model photomask.
Embodiment
In the manufacturing process of photomask, the chemical liquids of use, for example sulfuric acid can remain in the substrate.And the gas that viscose glue discharged of airborne ammonia, framework and light transmission film and bonding framework and substrate, framework and light transmission film etc. and carbon dioxide in air gas and remain in sulfate ion in the substrate, in transportation, storage and the exposure process of photomask, can react, generation contains the salts substances of ammonium radical ion and is deposited on the photomask surface, forms vaporific defective (Haze).Because these vaporific defective transmittances are lower,, thereby influence photoetching quality with the influence transmittance in exposure time.
Based on this, a kind of embodiment according to the utility model photomask, by framework is connected with the light-transparent substrate of photomask, the confined space that formation is isolated from the outside, described confined space is full of the vaporific defective of solubilized and can not corrodes the solvent of photomask pattern, and described photomask pattern is immersed among the described solvent, thereby makes the no vaporific defective in photomask surface.
With reference to shown in Figure 1, a kind of embodiment of the utility model photomask comprises:
With the semiclosed framework 30 that the light-transparent substrate 10 of photomask is connected, described semiclosed framework 30 comprise light transparent member 302, with light transparent member 302 around the support body framework 301 that is connected.Described supporter 301 is connected with described light-transparent substrate 10, and described light transparent member 302 is positioned at light-transparent substrate 10 tops, and its transparency range covers photomask pattern 20.Described semiclosed framework 30 constitutes confined spaces 303 with light-transparent substrate 10, is full of the vaporific defective of solubilized in the described confined space 303 and can not corrodes the solvent of photomask pattern 20, and photomask pattern 20 then is immersed in the described solvent.
In the above-mentioned embodiment, described semiclosed framework 30 is isolated from the outside photomask pattern 20 with the confined space 303 that light-transparent substrate 10 constitutes, and accumulates in light-transparent substrate 10 surfaces of photomask and the transmittance in influence exposure time thereby completely cut off described semiclosed framework 30 outer vaporific defectives.In addition, because air, the described semiclosed framework brought into when the light-transparent substrate 10 of implementing described semiclosed framework 30 and described photomask bonding and the light transparent member that covers on it all may discharge gas, in described confined space 303, produce vaporific defective, and be deposited on light-transparent substrate 10 surfaces of photomask.Thereby in described confined space 303, be full of the vaporific defective of solubilized and can not corrode the solvent of photomask pattern 20, also will be even produced vaporific defective in the described confined space 303 by described dissolution with solvents.In described confined space 303, to be full of described solvent and to be in order preventing to be transferred in the process owing to rock etc. former thereby the situation that photomask pattern 20 is not covered by described solvent occurs, thereby to have guaranteed that the photomask surface do not have vaporific defective all the time at photomask.
And the light transparent member 302 that described semiclosed framework 30 has, because its transparency range covers photomask pattern 20, thereby when described photomask was used for photoetching process, exposure was finished on light-transparent substrate 10 surfaces that light can be directly be transmitted to photomask by light transparent member 302.Thereby, when described photomask is used for photoetching process, described semiclosed framework 30 need not to take off from light-transparent substrate 10, make photomask when being used for photoetching process, also can stop vaporific defective and pollute photomask pattern 20, avoid producing in the exposure process figure deviation, thereby prolonged the serviceable life of photomask, reduced and changed the required cost of photomask.
In one embodiment, described light transparent member 302 is a light transmission film, and the exposure intensity the when thickness of film exposes not influence is advisable.The thickness of film can be 2-5 μ m, for example 2 μ m, 3 μ m, 4 μ m, 5 μ m etc.Certainly, thickness herein only is for example, is not in order to limiting the thickness of film, and the thickness that uses can be according to the difference of exposure light source and the corresponding material of selecting the suitable described film of thickness for use at present.The material require of described film makes transmittance in the exposure wavelength scope greater than 99.5%, and owing to need receiving fluids, also need consider the intensity of film.The material of described supporter 301 can be organic resin or plastics, also can be metal or other materials.The height of supporter 301 is adjusted according to the light path of exposure time process in described confined space 303.
In one embodiment, light transmission film can link to each other by viscose glue with supporter 301, and described viscose glue would not be filled the solvent corrosion of confined space 303, avoids film to come off from supporter 301.Described supporter 301 also can be connected by viscose glue with the light-transparent substrate 10 of photomask, and described viscose glue also would not be filled the solvent corrosion of confined space 303, avoids described semiclosed framework 30 to come off from light-transparent substrate 10.
In one embodiment, when described vaporific defective was the ammonium salt defective, described solvent can be that for example ultrapure water or other can dissolve the solvent of ammonium salt.But be noted that described solvent would not corrode photomask pattern 20, the material that for example forms photomask pattern 20 is a chromium, if certain solvent can dissolve sulphate particle, but also can corrode chromium simultaneously, then should not select this solvent for use.Because this solvent also will make photomask pattern 20 be out of shape to the corrosion of chromium, thereby influence photoetching process.
In the foregoing description, making described confined space 303 be full of solvent can realize by injecting described solvent to described confined space 303.
In the foregoing description, make described confined space 303 be full of solvent and also light-transparent substrate 10 can be immersed in the described solvent, in described solvent, implement being connected of described semiclosed framework 30 and transparent substrates 10, described light transparent member 302 is connected with supporter 301.Certainly, as described above, if use viscose glue to connect the transparent substrates 10 of described semiclosed framework 30 and photomask, then described viscose glue would not be by described solvent corrosion.
Can see by above-mentioned example based on vaporific defective, described photomask is to utilize the solvent of solubilized defect particles to reduce the defective generation, thereby described photomask should also can extend to the other defect type, only needs the solvent of corresponding this type of defect particles of use solubilized to get final product.
Though the utility model discloses as above with preferred embodiment, the utility model is not to be defined in this.Any those skilled in the art in not breaking away from spirit and scope of the present utility model, all can do various changes and modification, and therefore protection domain of the present utility model should be as the criterion with claim institute restricted portion.
Claims (6)
1. photomask, it is characterized in that, comprise: be connected to form the framework of confined space with the light-transparent substrate of photomask, described confined space is full of the solubilized defect particles and can not corrodes the solvent of photomask pattern, described photomask pattern is immersed among the described solvent, and described framework comprises the light transparent member that relative photomask pattern is provided with.
2. photomask as claimed in claim 1 is characterized in that described framework also comprises supporter, and around the described supporter connection light transparent member, described light transparent member is connected with the light-transparent substrate of photomask by supporter.
3. photomask as claimed in claim 2 is characterized in that, described light transparent member links to each other with described supporter by viscose glue; Described supporter links to each other with the light-transparent substrate of photomask by viscose glue.
4. photomask as claimed in claim 3 is characterized in that, described viscose glue is the viscose glue of anti-described solvent corrosion.
5. photomask as claimed in claim 1 is characterized in that, described light transparent member is a light transmission film.
6. photomask as claimed in claim 1 is characterized in that, described solvent is a pure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201554565U CN201311546Y (en) | 2008-11-17 | 2008-11-17 | Photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201554565U CN201311546Y (en) | 2008-11-17 | 2008-11-17 | Photo mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201311546Y true CN201311546Y (en) | 2009-09-16 |
Family
ID=41108803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201554565U Expired - Lifetime CN201311546Y (en) | 2008-11-17 | 2008-11-17 | Photo mask |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201311546Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI420236B (en) * | 2009-01-09 | 2013-12-21 | S&S Tech Co Ltd | Blank mask and photomask fabricated using it |
-
2008
- 2008-11-17 CN CNU2008201554565U patent/CN201311546Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI420236B (en) * | 2009-01-09 | 2013-12-21 | S&S Tech Co Ltd | Blank mask and photomask fabricated using it |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20121121 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20121121 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090916 |