CN201217686Y - Ionic beam emission source capable of emitting singular ion energy - Google Patents
Ionic beam emission source capable of emitting singular ion energy Download PDFInfo
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- CN201217686Y CN201217686Y CNU2008200293017U CN200820029301U CN201217686Y CN 201217686 Y CN201217686 Y CN 201217686Y CN U2008200293017 U CNU2008200293017 U CN U2008200293017U CN 200820029301 U CN200820029301 U CN 200820029301U CN 201217686 Y CN201217686 Y CN 201217686Y
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Abstract
The utility model relates to an ion beam emitting source which can output energy of one ion so as to overcome the problems existing in the prior art that the educed ion does not has single energy, the influence to the film quality is high, and the auxiliary repeatability of the ion beam is not easy to be realized. The utility model adopts the technical proposal that the ion beam emitting source comprises a gas discharge chamber, a focusing magnetic field generation unit, an ion energy selector and a beam expanding magnetic field generation unit, wherein an anode, a cathode and an educed grid plate are included in the gas discharge chamber, the ion energy selector comprises a selecting tube including an upper magnetic plate and a lower magnetic plate which are oppositely arranged and a first electrode plate and a second electrode plate which are oppositely arranged, and polar plate insulating pieces are clamped between the upper magnetic plate and the first electrode plate and as well as between the lower magnetic plate and the second electrode plate, and energy band limit through-holes are respectively arranged at the middle parts of an inlet cover plate and an outlet cover plate which are arranged at the both ends of the selecting tube. Compared with the prior art, the utility model has the advantages firstly, the iron with single energy can be generated and educed; secondly, the ion energy is adjustable; and thirdly, the manufacturing process is simple.
Description
Technical field:
The utility model relates to a kind of ion beam emission source (ion source) device that is used in optical vacuum ion beaming auxiliary filming machine or the ion beam etching equipment, particularly a kind of ion beam emission source of energy outputting single ionic energy.
Background technology:
In the thin film technique field, Assisted by Ion Beam (IBAD) is a kind of optical surface coating technique that thin film deposition (being mainly physical vapor deposition) and ion bombardment are combined together, the substrate material of thin film deposition is being carried out in the energetic ion beam bombardment that normally utilizes ion source to produce in the high vacuum evaporation chamber, thereby obtains the film of certain effect.Generally speaking, the ion beaming auxiliary filming technology has overcome physical vapor deposition and ion bombardment shortcoming separately, thereby has much characteristic.This technology can be improved the performance of film, realizes the effect that the ordinary hot evaporation technology can't obtain, and has been subjected to people's generally attention since the eighties in last century always, is still a kind of sophisticated optical thin film technology of preparing of extensive employing at present.Some developed countries all give the attention of height to this as states such as the U.S., Japan in the world.The ion beaming auxiliary filming technology successfully has been used to prepare a series of ganoine thin film, optical thin film, monocrystal thin films, diamond like carbon film and superconducting thin film, and has obtained the achievement in research that attracts people's attention improving on the optical property of material, mechanical property, electromagnetic property and the resist chemical performance.
The main process of ion beam assisted depositing technology is first ion beam bombardment substrate with certain energy before plated film, to purify the surface, the hydrocarbons decompose of surface contamination is removed, the substrate surface temperature is raise, provide activating surface to be beneficial to the film nucleation.In coating process, bombard the film of growing with suitable energetic ion again, thereby changed the film forming environment.At this moment, because foreign ion to the momentum transfer of particle in the cohesion, makes the coating materials particle increase in the mobility of substrate surface, and has therefore influenced the rate of setting and the growth velocity of particle, thereby cause the tap density of film to approach 1, increased substantially rete at suprabasil sticking power.Compare with the vacuum thermal evaporation technology, Ion Aided Film Coating Technique has improved the tamped density and the sticking power of film, and has kept the vacuum thermal evaporation coating technique can make things convenient for, promptly prepare the advantage of various films.Ion beam assisted depositing can improve the performance of film greatly.It not only can increase the gather density of film, eliminates the film columnar crystal structure, improves the compactness of film, can also improve the stability and the homogeneity of Film Optics constant, improves the stoichiometric ratio of film etc.Therefore this technology has become the prefered method of producing high-quality thin film, also is the membrane deposition method that present optics processing industry generally adopts.
In addition, ion beam etching and sputter also are two kinds of important technologies in the vacuum field.Ion beam etching (or ionic fluid attenuate) can be realized sample or the removal of piece surface atom level, not only be used in chemical specimen surface analysis, and optical surface not damaged ion beam machining also is used for the etching target material surface, realizes sputtering sedimentation.
In these application processes, ion beam emission source is called for short ion source and is the core component of ion beam assisted depositing or ion beam etching, sputtering sedimentation.Ionogenic effect provides the ionic fluid with certain beam intensity, is widely used in optics, microelectronics, investigation of materials and industrial every field at present.
Carried out a large amount of research around ion source and parameter thereof etc. both at home and abroad.At present, the ion beam assisted depositing plated film mainly comprises Kaufman (Kaufman) ion source, radio-frequency ion source, cold-cathode ion source and hall ion source etc.Their discharge mode is had nothing in common with each other, be applicable to different occasions respectively, but also have various shortcomings that wherein the ubiquitous shortcoming of all ion sources is: the ion in the ionic fluid of output is not to have single energy, but form very wide being with, have certain ion power spectrum.This is by the decision of the characteristic of geseous discharge, and the ionic fluid that does not filter or select must comprise the ion of various energy.Great deal of research results shows that the ion energy size that is used for assistant depositing is having a strong impact on the microtexture and the performance of film.Too small ion energy is difficult to give full play to the effectiveness of Assisted by Ion Beam, when ion energy is too high, and the thermal spike effect of generation even be enough to make the film crystalline phase to change; Excessive ion energy also can destroy the structure of film, the film that forms is produced intensive sputter effect, to such an extent as to film can't be grown.
With the cold-cathode ion source is example, and it comprises a gas discharge chamber, indoor anode, negative electrode and the grid of being provided with of this geseous discharge.The ion of too high or too low energy occupies certain proportion in the particle beam that this kind ion source is provided, and the ion behavior of film deposition process is become be difficult to control, and film quality is had bigger influence, is difficult to realize the repeatability of Assisted by Ion Beam.
The utility model content:
The purpose of this utility model provides a kind of ion beam emission source that can launch single energy, is not to have single energy to overcome the ion of drawing that prior art exists, and is bigger to the film quality influence, is difficult to realize the problem of the repeatability of Assisted by Ion Beam.
For achieving the above object, the utility model provides a kind of ion beam emission source of energy outputting single ionic energy, comprise gas discharge chamber, comprise anode, negative electrode in this gas discharge chamber and draw grid board, its special character is: be disposed with focusing magnetic field generation unit, ion energy selector and expansion bundle magnetic field generation unit drawing grid board one side; Described ion energy selector comprises that last pole plate, lower magnetic pole plate that is oppositely arranged and first battery lead plate that is oppositely arranged and second battery lead plate constitute the selection tube, be folded with electrode plate insulation spare between last pole plate, first battery lead plate, lower magnetic pole plate and second battery lead plate, described go up between pole plate and the lower magnetic pole plate to be connected with by pole shoe be positioned at a main magnet coil of selecting the tube outside, on first battery lead plate and second battery lead plate respectively conducting be connected with first electrode and second electrode; Select the two ends of tube to be respectively arranged with the inlet cover plate and the outlet cover plate of being separated by with inlet insulating part and outlet insulating part, inlet cover plate and outlet cover plate middle part are provided with can be with the restriction through hole.
Be folded with the inlet magnetic shield panel between above-mentioned inlet cover plate and the focusing magnetic field generation unit, be folded with the outlet magnetic shield panel between outlet cover plate and the expansion bundle magnetic field generation unit; Inlet magnetic shield panel and outlet magnetic shield panel are provided with more than or equal to the shielding slab through hole that can be with the restriction through hole.Shielding slab can be isolated the magnetic field in magnetic field and the ion energy selector, reduces interference each other.
The cross section of above-mentioned selection tube is a rectangle.Process easy for installation.
Above-mentioned focusing magnetic field generation unit and expansion bundle magnetic field generation unit are permanent magnet and/or solenoid.
Above-mentioned outlet cover plate is provided with radiator structure.Can be to be made into water jacket, or adopt copper pipe to be welded.
In the practical application, in order to obtain good as far as possible film, this has a clear and definite value with regard to requiring to the energy of bombarding ion, rather than an average quantity, thereby can control according to actual needs.The utility model utilizes one group of orthogonal electromagnetic field, the ion energy of introducing in the energy selector is screened, thereby draw the ionic fluid of single energy.Compared with prior art, the utility model has the advantages that:
1, can produce, draw the ion of single energy: all ions have much at one energy (as regulating the output ion energy are 1000eV, and all ion energies of actual output all within 990-1010eV, can be with very narrow in the ionic fluid of its output; And common ion source, all ion energies of actual output can be with very wide between 700-1300eV), the unity precision of output energy is better than 1%; Can regulate by ion energy selector according to actual needs, as long as the relative size of regulating electromagnetic field just can select to export the size of ion energy, greatly reduce the diversity factor of plated film supporting process and disturbed, realized the controllability of film microstructure.
2, ion energy is adjustable: the capacity control scope is wide, the energy of the ionic fluid intermediate ion of ion source output can be regulated according to actual needs, can satisfy the needs of industries such as different film deposition processes and ion beam sputtering, etching, in actual industrial production, have wide practical use.
3, each parts in the technical scheme that the utility model proposed do not require high working accuracy, and material is not had particular requirement yet, and simple in structure, compact, manufacturing process is simple.
Description of drawings:
Fig. 1 is a structure principle chart of the present utility model;
Fig. 2 is the structural representation of the utility model intermediate ion energy selector;
Fig. 3 is the A-A view of Fig. 2;
Fig. 4 is the ion energy distribution function figure under utility model extraction voltage Ua=800V and the extraction voltage Ua=1200V.
Description of reference numerals is as follows:
1-focusing magnetic field generation unit, the 2-magnetic shield panel that enters the mouth, the 3-cover plate that enters the mouth, the 4-insulating part that enters the mouth, the last pole plate of 5-, 6-exports insulating part, 7-exports cover plate, and 8-exports magnetic shield panel, and 9-expands bundle magnetic field generation unit, 10-lower magnetic pole plate, 11-master's magnet coil, 12-first battery lead plate, the 13-pole shoe, 14-electrode plate insulation spare, 15-second battery lead plate, 16-insulating mat.
Embodiment:
Below in conjunction with accompanying drawing the utility model is done and to be explained.
Referring to Fig. 1～Fig. 3, a kind of ion beam emission source of energy outputting single ionic energy:
(1) structure: mainly comprise gas discharge chamber, focusing magnetic field generation unit 1, ion energy selector and expansion bundle magnetic field generation unit 9.
1, said gas discharge chamber is the primary structure of cold-cathode ion source, is mainly used to produce the plasma body of certain density, and this part-structure is known structure, with common illustrating.Whole discharge chamber is made up of two negative electrode and cylindric anodes to dress.Negative electrode adopts the material of low sputtering raste and high electron emissivity to form, and perhaps adopts the mode of heated filament electron emission.The discharge chamber externally-applied magnetic field adopts permanent magnet or solenoid to constitute, and its direction that produces magnetic field is parallel with the axis of anode cylinder.From the electronics of emission of cathode, under the anode voltage effect, pass anode cylinder and quicken, the negative electrode grid makes electron reflection return again, and axial magnetic field makes electronics be difficult to arrive fast anode.Like this, electronics vibrates back and forth at two interpolars, and magnetic field makes spin line motion of electronics, and the distance that has prolonged electron motion has greatly improved the probability that gas is ionized, and forms glow discharge under subatmospheric, thereby produce plasma body in whole chamber.This cold-cathode ion source is mainly kept discharge by the secondary electron that the ion bombardment cathode surface produces.Ion source adopts permanent magnet or solenoid that magnetic field is provided.Ionic fluid is drawn screen and is comprised one pole grid or bigrid, is used for the ionic fluid of plasma body in the discharge chamber is drawn discharge chamber.Grid is made of the high-melting point metal thin slice, at the aperture of its surface working certain number to draw ionic fluid.The total area of perforate accounts for the 50-80% of the grid total area.
2, grid board one side of drawing of said gas discharge chamber is disposed with focusing magnetic field generation unit 1, ion energy selector and expansion bundle magnetic field generation unit 9 in the above, and focusing magnetic field generation unit 1 and expansion bundle magnetic field generation unit 9 are selected solenoid for use.Said ion energy selector comprises that the cross section that is made of the last pole plate 5 that is oppositely arranged, lower magnetic pole plate 10 and first battery lead plate 12 that is oppositely arranged and second battery lead plate 15 is that quadrate is selected tube, be folded with the electrode plate insulation spare 14 of strip between last pole plate 5, lower magnetic pole plate 10, first battery lead plate 12 and second battery lead plate 15, described go up between pole plate 5 and the lower magnetic pole plate 10 to be connected with by pole shoe 13 be located on main magnet coil 11, the first battery lead plates 12 of selecting the tube outside and second battery lead plate 15 respectively that conducting is connected with first electrode 18 and second electrode 17.Select the two ends of tube to be respectively arranged with the inlet cover plate 3 and the outlet cover plate 7 of being separated by with inlet insulating part 4 and outlet insulating part 6, inlet cover plate 3 and outlet cover plate 7 middle parts are provided with can be with the restriction through hole; Between inlet cover plate 3 and focusing magnetic field generation unit 1, be folded with inlet magnetic shield panel 2, outlet cover plate 7 is folded with outlet magnetic shield panel 8 with expanding between the bundle magnetic field generation unit 9, inlet magnetic shield panel 2 and export magnetic shield panel 8 and be provided with and can be with and limit the identical shielding slab through hole of through hole.
Wherein: focusing magnetic field generation unit 1 makes the ionic fluid of ion source emission converge to inlet with thin bore in order to the magneticstrength of about 0-500Gauss to be provided.Can be permanent magnet and/or solenoid.
Inlet magnetic shield panel 2 and outlet magnetic shield panel 8 are used for the magnetic field that shielding coil produces.Adopt high material such as the industrial soft iron of magnetic permeability, materials processings such as silicon steel.
Last magnetic pole 5 and lower magnetic pole 10 all adopt the good material of magnetic diffusivity to constitute, as industrial soft iron, silicon steel etc.Polar whole profile can be processed into one, also can be welded by parts.
Expand bundle magnetic field generation unit 9 in order to the magneticstrength of about 0-500Gauss to be provided, make the ionic fluid of ion source emission outside outlet, diverge to certain angle.Can be permanent magnet and/or solenoid.
First battery lead plate 12 and second battery lead plate 15 adopt good conductive and non-magnetic metallic substance, make as fine copper etc., and and good insulation between the miscellaneous part on every side.They adopt screw to be connected with electrode plate insulation spare 14.
When guaranteeing first battery lead plate 12 15 conductings be connected first electrode 18 and second electrode 17 with second battery lead plate, can and lower magnetic pole 10 between guarantee good insulation performance, insulating mat 16 can also be set, and insulating mat 16 adopts good tetrafluoroethylene of insulativity or stupalith to constitute.
Electrode 17,18 adopts screw thread to be connected with second battery lead plate 15 with first battery lead plate 12, is used to connect pole plate and extraneous power supply lead wire, is made by the materials such as fine copper that electroconductibility is good.
(2) working process: the utility model is at first introduced working gas in discharge chamber, under the effect of electromagnetic field, produce plasma body, by grid (single grid or multiple-grid) ion is drawn out to outside the discharge chamber then, by the magnetic focusing system, ionic fluid is converged to the input port of energy selector again.Be distributed with orthogonal electromagnetic field in the energy selector, utilize the motion characteristics of charged ion under electromagnetic field effect, have only the charged ion that satisfies particular energy relation could be along this zone of straight-line pass, and the ion that does not satisfy this relation will change its direction of motion, can not pass through energy selector smoothly, thereby play the effect that the output ion energy is selected.Regulate the relative size in ion energy selector electric field and magnetic field, can change the output energy of ions, thereby play the purpose of regulating ion energy.
(3) principle of work:
The ionic fluid that grid board is drawn of drawing from gas discharge chamber, has the bigger angle of divergence, can not directly enter energy selector, adopt the two-stage electromagnetic coil to constitute focusing magnetic field generation unit 1 in the utility model, the focusing of ion beam that will disperse is to the input port of ion energy selector.
Ion energy selector is mainly used to select the ion energy exported.Enter the ion in the ion energy selector, have the energy region of broad.In energy selector, be distributed with orthogonal electromagnetic field, when in these two orthogonal electromagnetic field, moving, can be subjected to the effect of electrical forces and magnetic field force simultaneously owing to ion, the mutual direction of suitable distribution electromagnetic field, the electrical forces that ion is subjected to is opposite with the magnetic field force direction.At this moment, when the electrical forces that is subjected in electromagnetic field when ion equals magnetic field force, ion will move along rectilinear direction, until the ion energy alternative pack that flies out.The ion that does not satisfy above-mentioned relation will change its direction of motion in energy selector, finally absorbed by the sidewall pole plate.Therefore, the ion of exporting from ion energy selector at last all has identical energy
Perhaps have and very narrow can be with (1%).Wherein, m is a mass of ion, and E and B are respectively strength of electric field and magnetic induction density.
Expand bundle magnetic field generation unit 9 and forms, be mainly used in and enlarge the angle of divergence of finally exporting ionic fluid, to satisfy the needs of large-area coating film by solenoid.Because magnetic field does not change energy of ions, though therefore through expanding bundle, ion still fails to export with single energy.
In order to obtain the ionic fluid of single energy output.Main magnet coil 11 provides the capacity control electromagnetic field, is mainly used to regulate the electric field E of ion energy selector and the relative size of magnetic field B, the two big or small ratio decision output energy of ions size, thus reach the purpose of regulating ion energy.
(4) for example practical:
Embodiment 1:
When the preparation optical thin film, need usually with ion beam assisted depositing to improve the quality of forming film of film.Discover that different thin-film materials needs different ion beam energies to assist.When preparation ZnS film, need be used for auxiliary ion beam energy is 800eV, and energy is low excessively, can not get best auxiliaring effect, and energy is too high, can sputter away the film that has formed.Therefore, adopt novel ion beam emission source of the present utility model, at first setting ionogenic output energy is 800eV, during works better, system can regulate ionogenic discharge parameter automatically, obtains needed output Energy value, and adjustment obtains the strongest ion beam current density output.At this moment exporting energy of ions is 800eV.
Embodiment 2:
When the preparation optical thin film, also need with ion beam assisted depositing to be lowered into film temperature usually.When especially preparing multilayer film, multiple material alternating deposit, every kind of material all needs different Assisted by Ion Beam energy, and requires energy output single.Such as adopting ZnS/MgF
2During the high reflective film of preparation medium, the assisting ion beam energy that the ZnS film needs is 800eV, and MgF
2The assisting ion beam energy that film needs is 1100eV, and all needs monoergic output.Therefore, adopt novel ion beam emission source of the present utility model, setting ionogenic output energy respectively is 800eV and 1100eV, and communicates with main frame.Whole ion source system will regulate ionogenic discharge parameter automatically according to the actual film that is coated with, and obtains the energy needed value, and adjusts and obtain the strongest ion beam current density output.
(5) referring to Fig. 4, the energy distribution of the ionic fluid intermediate ion that the utility model is drawn is characterized as: under certain energy, the shared number of ion reaches 100%, and maximum difference with minimum ion energy only is 1% in the ionic fluid.
Claims (5)
1, a kind of ion beam emission source of energy outputting single ionic energy, comprise gas discharge chamber, comprise anode, negative electrode in this gas discharge chamber and draw grid board, it is characterized in that: be disposed with focusing magnetic field generation unit (1), ion energy selector and expansion bundle magnetic field generation unit (9) drawing grid board one side; Described ion energy selector comprises the last pole plate (5) that is oppositely arranged, the selection tube that lower magnetic pole plate (10) and first battery lead plate (12) that is oppositely arranged and second battery lead plate (15) constitute, last pole plate (5), first battery lead plate (12), be folded with electrode plate insulation spare (14) between lower magnetic pole plate (10) and second battery lead plate (15), described going up between pole plate (5) and the lower magnetic pole plate (10) by pole shoe (13) is connected with a main magnet coil (11) that is positioned at outside selecting tin, on first battery lead plate (12) and second battery lead plate (15) respectively conducting be connected with first electrode (18) and second electrode (17); Select the two ends of tube to be respectively arranged with the inlet cover plate (3) and the outlet cover plate (7) of being separated by with inlet insulating part (4) and outlet insulating part (6), inlet cover plate (3) and outlet cover plate (7) middle part are provided with can be with the restriction through hole.
2, the ion beam emission source of a kind of energy outputting single ionic energy as claimed in claim 1, it is characterized in that: be folded with inlet magnetic shield panel (2) between described inlet cover plate (3) and the focusing magnetic field generation unit (1), be folded with outlet magnetic shield panel (8) between outlet cover plate (7) and the expansion bundle magnetic field generation unit (9); Inlet magnetic shield panel (2) and outlet magnetic shield panel (8) are provided with more than or equal to the shielding slab through hole that can be with the restriction through hole.
3, the ion beam emission source of a kind of energy outputting single ionic energy as claimed in claim 1 or 2, it is characterized in that: the cross section of described selection tube is a rectangle.
4, the ion beam emission source of a kind of energy outputting single ionic energy as claimed in claim 3, it is characterized in that: described focusing magnetic field generation unit (1) and expansion bundle magnetic field generation unit (9) are permanent magnet and/or solenoid.
5, the ion beam emission source of a kind of energy outputting single ionic energy as claimed in claim 1 or 2, it is characterized in that: described outlet cover plate (7) is provided with radiator structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200293017U CN201217686Y (en) | 2008-06-03 | 2008-06-03 | Ionic beam emission source capable of emitting singular ion energy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200293017U CN201217686Y (en) | 2008-06-03 | 2008-06-03 | Ionic beam emission source capable of emitting singular ion energy |
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| Publication Number | Publication Date |
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| CN201217686Y true CN201217686Y (en) | 2009-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU2008200293017U Expired - Lifetime CN201217686Y (en) | 2008-06-03 | 2008-06-03 | Ionic beam emission source capable of emitting singular ion energy |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105834175A (en) * | 2016-04-21 | 2016-08-10 | 哈尔滨工业大学 | Self-cleaning method for contaminated film of discharge channel of Hall thruster |
-
2008
- 2008-06-03 CN CNU2008200293017U patent/CN201217686Y/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105834175A (en) * | 2016-04-21 | 2016-08-10 | 哈尔滨工业大学 | Self-cleaning method for contaminated film of discharge channel of Hall thruster |
| CN105834175B (en) * | 2016-04-21 | 2018-09-07 | 哈尔滨工业大学 | Hall thruster discharge channel polluted membrane method for self-cleaning |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20080603 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |