CN201215950Y - 3W multi-carrier power amplifier use in TD-SCDMA system base station - Google Patents

3W multi-carrier power amplifier use in TD-SCDMA system base station Download PDF

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CN201215950Y
CN201215950Y CNU2008200667706U CN200820066770U CN201215950Y CN 201215950 Y CN201215950 Y CN 201215950Y CN U2008200667706 U CNU2008200667706 U CN U2008200667706U CN 200820066770 U CN200820066770 U CN 200820066770U CN 201215950 Y CN201215950 Y CN 201215950Y
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amplifier
power amplifier
output
input
switch
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CNU2008200667706U
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孟庆南
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ZHENGWEI ELECTRONIC TECHNOLOGY Co Ltd WUHAN
Wuhan Gewei Electronic Technology Co Ltd
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ZHENGWEI ELECTRONIC TECHNOLOGY Co Ltd WUHAN
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Abstract

The utility model relates to a power amplifier, in particular to a 3W multi-carrier power amplifier in a TD-SCDMA system base station, which is characterized by comprising a first power amplifier circuit, a first low-noise release circuit, a power supply and a control circuit and a first input-output connector (B1), wherein the power supply and the control circuit are provided with the power supply and control signals, the first power amplifier circuit comprises a first input connector (A1), a first adjustable attenuator (1), a first-stage amplifier (2) of the first power amplifier circuit, a first temperature compensation attenuator (3), a second-stage amplifier (4) of the first power amplifier circuit, a third-stage amplifier (5) of the first power amplifier circuit, a fourth-stage amplifier (6) of the first power amplifier circuit, a first directional coupler (7), a first circulator (8), a first RF switch (9) of the first power amplifier circuit, a first coupler (10), a second RF switch (11) of the first power amplifier circuit, a first absorbing load (31) and a second absorbing load (32). The amplifier has good linear index and high working efficiency and can be widely used in the TD-SCDMA base station.

Description

A kind of 3W Multi-Carrier Power Amplifier that is used for the TD-SCDMA system base-station
Technical field
The utility model relates to a kind of power amplifier, is specifically related to a kind of 3W Multi-Carrier Power Amplifier of the TD-SCDMA of being used for system base-station.
Background technology
The TD-SCDMA/3W Multi-Carrier Power Amplifier, because neighboring trace suppresses (ACPR) index request height, good linearity, efficient requires high, for the level Four amplifier, how to select the cooperation of amplifier tubes at different levels in design, is a problem with challenge.For the efficiency index requirement, the power tube of last main amplifying stage can not select the excessive power of can not selecting of power too small.The excessive then power consumption of power is bigger; The too small requirement that then can not satisfy the neighboring trace inhibition again of power.Power amplifier for high efficiency requires and high linear index requires only can not satisfy index request with the back-off technology.
The TD-SCDMA/3W Multi-Carrier Power Amplifier works in the time-division state, inner power amplifier and LNA circuit be time-division work simultaneously respectively, under power amplifier volume requirement conditions of higher, how to guarantee that the functional reliability of power amplifier and LNA circuit and stability also are technological challenges.
Summary of the invention
The purpose of this utility model is to provide a kind of 3W Multi-Carrier Power Amplifier of the TD-SCDMA of being used for system base-station, and it had both satisfied the requirement of neighboring trace inhibition (ACPR), can accomplish high efficiency again; Can guarantee again simultaneously that power amplifier and LNA circuit working are reliable and stable.
For achieving the above object, the technical solution of the utility model is: a kind of 3W Multi-Carrier Power Amplifier that is used for the TD-SCDMA system base-station, it is characterized in that: it comprises first power amplifier, the first LNA circuit, power supply and control circuit, the first output input connector B1, and power supply and control circuit provide power supply;
First power amplifier comprises the first input connector A1, first adjustable attenuator 1, the first order amplifier 2 of first power amplifier, the first temperature compensation attenuator 3, the second level amplifier 4 of first power amplifier, the third level amplifier 5 of first power amplifier, the fourth stage amplifier 6 of first power amplifier, first directional coupler 7, first circulator 8, first radio-frequency (RF) switch 9 of first power amplifier, first coupler 10, second radio-frequency (RF) switch 11 of first power amplifier, first absorbing load 31, second absorbing load 32; The first input connector A1 connects the input of first adjustable attenuator 1, the output of first adjustable attenuator 1 connects the input of the first order amplifier 2 of first power amplifier, the output of the first order amplifier 2 of first power amplifier connects the first temperature compensation attenuator, 3 inputs, the output of the first temperature compensation attenuator 3 connects the input of the second level amplifier 4 of first power amplifier, the output of the second level amplifier 4 of first power amplifier connects the input of the third level amplifier 5 of first power amplifier, and the output of the third level amplifier 5 of first power amplifier connects the input of the fourth stage amplifier 6 of first power amplifier; The output of the fourth stage amplifier 6 of first power amplifier connects the input of first directional coupler 7,7 outputs of first directional coupler have two paths of signals, the first via output of first directional coupler 7 is connected with the first input end of second radio-frequency (RF) switch 11 of first power amplifier by the coupled end of first directional coupler 7, the second road output of the first power amplifier directional coupler 7 links to each other with first port of first circulator 8, second port output of first circulator 8 links to each other with the input of the first output input connector B1, and the 3rd port of first circulator 8 links to each other with the input of first radio-frequency (RF) switch 9 of first power amplifier; First output of first radio-frequency (RF) switch 9 of first power amplifier links to each other with the input of first coupler 10, the output of first coupler 10 is connected with second input of second radio-frequency (RF) switch 11 of first power amplifier, the isolation end of first coupler 10 links to each other with first absorbing load 31, and-90 degree coupled end of first coupler 10 link to each other with second absorbing load 32; Second output of first radio-frequency (RF) switch 9 of first power amplifier links to each other with the input of the first order amplifier 12 of the first LNA circuit, and the output of second radio-frequency (RF) switch 11 of first power amplifier links to each other with second input of the 3rd radio frequency switch 14 of the first LNA circuit;
The first LNA circuit comprises the first order amplifier 12 of the first LNA circuit, the second level amplifier 13 of the first LNA circuit, the 3rd radio frequency switch 14, first dielectric filter 15 and the first out connector C1 of the first LNA circuit; The output of the first order amplifier 12 of the first LNA circuit is connected with the input of the second level amplifier 13 of the first LNA circuit, the first input end of the 3rd radio frequency switch 14 of the output of the second level amplifier 13 of the first LNA circuit and the first LNA circuit, the output of the 3rd radio frequency switch 14 of the first LNA circuit is connected with first dielectric filter, 15 inputs, and the output of first dielectric filter 15 is connected with the first out connector C1.
The utility model is in order to satisfy high efficiency requirement, the model and the operating state of suitable selection power tubes at different levels, suppress the requirement of (ACPR) and very big surplus capacity is arranged in order to satisfy neighboring trace, adopt pre-distortion technology, thereby make power amplifier when power output is 3W ± 1.6MHz band is outer to be suppressed≤-48dBc, the outer inhibition of ± 3.2MHz band≤-53dBc; And by high low temperature test, stability and reliability experiment and HALT experiment, power amplifier and LNA circuit working are reliable, stable; This power amplifier consumes little, and total operating efficiency is 11.4%-12%.
Useful result of the present utility model is: both satisfied the requirement of neighboring trace inhibition (ACPR), can accomplish high efficiency again; Can guarantee again simultaneously that power amplifier and LNA circuit working are reliable, stable.The utility model linear index is good, high efficiency; Can be widely used in the TD-SCDMA base station system.
Description of drawings
Fig. 1 is the schematic block circuit diagram of the utility model embodiment 1,
Fig. 2 is the schematic block circuit diagram (the binary channel power amplifier that derives) by the utility model embodiment 2.
Embodiment
Embodiment 1:
As shown in Figure 1, a kind of 3W Multi-Carrier Power Amplifier that is used for the TD-SCDMA system base-station, it is made up of descending (emission) passage and up (reception) passage, it comprises first power amplifier, the first LNA circuit, power supply and control circuit, the first output input connector B1, and power supply and control circuit provide power supply;
First power amplifier comprises the first input connector A1, first adjustable attenuator 1, the first order amplifier 2 of first power amplifier, the first temperature compensation attenuator 3, the second level amplifier 4 of first power amplifier, the third level amplifier 5 of first power amplifier, the fourth stage amplifier 6 of first power amplifier, first directional coupler 7, first circulator 8, first radio-frequency (RF) switch 9 of first power amplifier, first coupler 10, second radio-frequency (RF) switch 11 of first power amplifier, first absorbing load 31, second absorbing load 32; The first input connector A1 connects the input of first adjustable attenuator 1, the output of first adjustable attenuator 1 connects the input of the first order amplifier 2 of first power amplifier, the output of the first order amplifier 2 of first power amplifier connects the first temperature compensation attenuator, 3 inputs, the output of the first temperature compensation attenuator 3 connects the input of the second level amplifier 4 of first power amplifier, the output of the second level amplifier 4 of first power amplifier connects the input of the third level amplifier 5 of first power amplifier, and the output of the third level amplifier 5 of first power amplifier connects the input of the fourth stage amplifier 6 of first power amplifier; The output of the fourth stage amplifier 6 of first power amplifier connects the input of first directional coupler 7,7 outputs of first directional coupler have two paths of signals, the first via output of first directional coupler 7 is connected with the first input end of second radio-frequency (RF) switch 11 of first power amplifier by the coupled end of first directional coupler 7, the second road output of the first power amplifier directional coupler 7 links to each other with first port of first circulator 8, second port output of first circulator 8 links to each other with the input of the first output input connector B1, and the 3rd port of first circulator 8 links to each other with the input of first radio-frequency (RF) switch 9 of first power amplifier; First output of first radio-frequency (RF) switch 9 of first power amplifier links to each other with the input of first coupler 10, the output of first coupler 10 is connected with second input of second radio-frequency (RF) switch 11 of first power amplifier, the isolation end of first coupler 10 links to each other with first absorbing load 31, and-90 degree coupled end of first coupler 10 link to each other with second absorbing load 32; Second output of first radio-frequency (RF) switch 9 of first power amplifier links to each other with the input of the first order amplifier 12 of the first LNA circuit, and the output of second radio-frequency (RF) switch 11 of first power amplifier links to each other with second input of the 3rd radio frequency switch 14 of the first LNA circuit;
The first LNA circuit comprises the first order amplifier 12 of the first LNA circuit, the second level amplifier 13 of the first LNA circuit, the 3rd radio frequency switch 14, first dielectric filter 15 and the first out connector C1 of the first LNA circuit; The output of the first order amplifier 12 of the first LNA circuit is connected with the input of the second level amplifier 13 of the first LNA circuit, the first input end of the 3rd radio frequency switch 14 of the output of the second level amplifier 13 of the first LNA circuit and the first LNA circuit, the output of the 3rd radio frequency switch 14 of the first LNA circuit is connected with first dielectric filter, 15 inputs, and the output of first dielectric filter 15 is connected with the first out connector C1.
Described first adjustable attenuator 1 is potentiometer TC33X-2-101E and two adjustable damping networks that fixed resistance forms; The amplifier tube of the first order amplifier 2 of first power amplifier is the ATF-54143 of AVAGO, the first temperature compensation attenuator 3 is the 3-9 or 6-9 of SANGSHINE company, the second level amplifier 4 of first power amplifier is the HMC454 of HITTITE company, the amplifier tube of the third level amplifier 5 of first power amplifier is the SLD-1026Z of RFMD company, and the amplifier tube of the fourth stage amplifier 6 of first power amplifier is the PTFA190451E of INFINEON company; First directional coupler 7 uses little band to carry out emulation; First circulator 8 is opened up the TBH202G of company of nation for Nanjing, and first coupler 10 is the JP520 of ANAREN company; First radio-frequency (RF) switch 9 of first power amplifier is the WKB018025P in 55 in Nanjing; The amplifier tube of the first order amplifier 12 of the first LNA circuit is the ATF54143 of Agilent company, the amplifier tube of the second level amplifier 13 of the first LNA circuit is the ATF-54143 of Agilent company, first dielectric filter 15 is the DFCH32G01HDNAA of MURURA company, and the 3rd radio frequency switch 14 of second radio-frequency (RF) switch 11 of first power amplifier and the first LNA circuit is the HMC194MS8E of HITTITE company; Wherein power supply and control circuit are universal circuit.
Embodiment 2: form a binary channel 3W Multi-Carrier Power Amplifier by two-way jointly with embodiment 1 identical power amplifier, the composition of its concrete parts is complete striking resemblances; But common source and control circuit.Power supply and control circuit are universal circuit.
As shown in Figure 2, a kind of 3W Multi-Carrier Power Amplifier that is used for the TD-SCDMA system base-station, it comprises first power amplifier, the first LNA circuit, second power amplifier, the second LNA circuit, power supply and control circuit, the first output input connector B1, the second output input connector B2, and power supply and control circuit provide power supply;
First power amplifier, the first LNA circuit, power supply and control circuit, output input connector B1 are identical with embodiment 1;
Second power amplifier comprises the second input connector A2, second adjustable attenuator 16, the first order amplifier 17 of second power amplifier, the second temperature compensation attenuator 18, the second level amplifier 19 of second power amplifier, the third level amplifier 20 of second power amplifier, the fourth stage amplifier 21 of second power amplifier, second directional coupler 22, second circulator 23, first radio-frequency (RF) switch 24 of second power amplifier, second coupler 25, second radio-frequency (RF) switch 26 of second power amplifier, the 3rd absorbing load 33, the 4th absorbing load 34; The second input connector A2 connects the input of second adjustable attenuator 16, the output of second adjustable attenuator 16 connects the input of the first order amplifier 17 of second power amplifier, the output of the first order amplifier 17 of second power amplifier connects the second temperature compensation attenuator, 18 inputs, the output of the second temperature compensation attenuator 18 connects the input of the second level amplifier 19 of second power amplifier, the output of the second level amplifier 19 of second power amplifier connects the input of the third level amplifier 20 of second power amplifier, and the output of the third level amplifier 20 of second power amplifier connects the input of the fourth stage amplifier 21 of second power amplifier; The output of the fourth stage amplifier 21 of second power amplifier connects the input of second directional coupler 22, the output of second directional coupler 22 has two paths of signals, the first via output of second directional coupler 22 is connected with the first input end of second radio-frequency (RF) switch 26 of second power amplifier by the coupled end of second directional coupler 22, the second road output of second directional coupler 22 links to each other with first port of second circulator 23, second port output of second circulator 23 links to each other with the input of the second output input connector B1, and the 3rd port of second circulator 23 links to each other with the input of first radio-frequency (RF) switch 24 of second power amplifier; First output of first radio-frequency (RF) switch 24 of second power amplifier links to each other with the input of second coupler 25, the output of second coupler 25 is connected with second input of second radio-frequency (RF) switch 26 of second power amplifier, the isolation end of second coupler 25 links to each other with the 3rd absorbing load 33, and-90 coupled end of second coupler 25 link to each other with the 4th absorbing load 34; Second output of first radio-frequency (RF) switch 24 of second power amplifier links to each other with the input of the first order amplifier 27 of the second LNA circuit, and the output of second radio-frequency (RF) switch 26 of second power amplifier links to each other with second input of the 3rd radio frequency switch 29 of the second LNA circuit;
The second LNA circuit comprises the first order amplifier 27 of the second LNA circuit, the second level amplifier 28 of the second LNA circuit, the 3rd radio frequency switch 29, second dielectric filter 30 and the second out connector C2 of the second LNA circuit; The output of the first order amplifier 27 of the second LNA circuit is connected with the input of the second level amplifier 28 of the second LNA circuit, the first input end of the 3rd radio frequency switch 29 of the output of the second level amplifier 28 of the second LNA circuit and the second LNA circuit, the output of the 3rd radio frequency switch 29 of the second LNA circuit is connected with second dielectric filter, 30 inputs, and the output of second dielectric filter 30 is connected with the second out connector C2.

Claims (3)

1. 3W Multi-Carrier Power Amplifier that is used for the TD-SCDMA system base-station, it is characterized in that: it comprises first power amplifier, the first LNA circuit, power supply and control circuit, the first output input connector (B1), and power supply and control circuit provide power supply and control signal;
First power amplifier comprises first input connector (A1), first adjustable attenuator (1), the first order amplifier (2) of first power amplifier, the first temperature compensation attenuator (3), the second level amplifier (4) of first power amplifier, the third level amplifier (5) of first power amplifier, the fourth stage amplifier (6) of first power amplifier, first directional coupler (7), first circulator (8), first radio-frequency (RF) switch (9) of first power amplifier, first coupler (10), second radio-frequency (RF) switch (11) of first power amplifier, first absorbing load (31), second absorbing load (32); First input connector (A1) connects the input of first adjustable attenuator (1), the output of first adjustable attenuator (1) connects the input of the first order amplifier (2) of first power amplifier, the output of the first order amplifier (2) of first power amplifier connects first temperature compensation attenuator (3) input, the output of the first temperature compensation attenuator (3) connects the input of the second level amplifier (4) of first power amplifier, the output of the second level amplifier (4) of first power amplifier connects the input of the third level amplifier (5) of first power amplifier, and the output of the third level amplifier (5) of first power amplifier connects the input of the fourth stage amplifier (6) of first power amplifier; The output of the fourth stage amplifier (6) of first power amplifier connects the input of first directional coupler (7), first directional coupler (7) output has two paths of signals, the first via output of first directional coupler (7) is connected with the first input end of second radio-frequency (RF) switch (11) of first power amplifier by the coupled end of first directional coupler (7), the second road output of the first power amplifier directional coupler (7) links to each other with first port of first circulator (8), second port output of first circulator (8) links to each other with the input of the first output input connector (B1), and the 3rd port of first circulator (8) links to each other with the input of first radio-frequency (RF) switch (9) of first power amplifier; First output of first radio-frequency (RF) switch (9) of first power amplifier links to each other with the input of first coupler (10), the output of first coupler (10) is connected with second input of second radio-frequency (RF) switch (11) of first power amplifier, the isolation end of first coupler (10) links to each other with first absorbing load (31), and-90 degree coupled end of first coupler (10) link to each other with second absorbing load (32); Second output of first radio-frequency (RF) switch (9) of first power amplifier links to each other with the input of the first order amplifier (12) of the first LNA circuit, and the output of second radio-frequency (RF) switch (11) of first power amplifier links to each other with second input of the 3rd radio frequency switch (14) of the first LNA circuit;
The first LNA circuit comprises the first order amplifier (12) of the first LNA circuit, the second level amplifier (13) of the first LNA circuit, the 3rd radio frequency switch (14), first dielectric filter (15) and first out connector (C1) of the first LNA circuit; The output of the first order amplifier (12) of the first LNA circuit is connected with the input of the second level amplifier (13) of the first LNA circuit, the first input end of the output of the second level amplifier (13) of the first LNA circuit and the 3rd radio frequency switch (14) of the first LNA circuit, the output of the 3rd radio frequency switch (14) of the first LNA circuit is connected with first dielectric filter (15) input, and the output of first dielectric filter (15) is connected with first out connector (C1).
2. a kind of 3W Multi-Carrier Power Amplifier that is used for the TD-SCDMA system base-station according to claim 1 is characterized in that: described first adjustable attenuator (1) is potentiometer TC33X-2-101E and two adjustable damping networks that fixed resistance forms; The amplifier tube of the first order amplifier (2) of first power amplifier is the ATF-54143 of AVAGO, the first temperature compensation attenuator (3) is the 3-9 or 6-9 of SANGSHINE company, the second level amplifier (4) of first power amplifier is the HMC454 of HITTITE company, the amplifier tube of the third level amplifier (5) of first power amplifier is the SLD-1026Z of RFMD company, and the amplifier tube of the fourth stage amplifier (6) of first power amplifier is the PTFA190451E of INFINEON company; First directional coupler (7) uses little band to carry out emulation; First circulator (8) is opened up the TBH202G of company of nation for Nanjing, and first coupler (10) is the JP520 of ANAREN company; First radio-frequency (RF) switch (9) of first power amplifier is the WKB018025P in 55 in Nanjing; The amplifier tube of the first order amplifier (12) of the first LNA circuit is the ATF54143 of Agilent company, the amplifier tube of the second level amplifier (13) of the first LNA circuit is the ATF-54143 of Agilent company, first dielectric filter (15) is the DFCH32G01HDNAA of MURURA company, and the 3rd radio frequency switch (14) of second radio-frequency (RF) switch (11) of first power amplifier and the first LNA circuit is the HMC194MS8E of HITTITE company; Wherein power supply and control circuit are universal circuit.
3. 3W Multi-Carrier Power Amplifier that is used for the TD-SCDMA system base-station, it is characterized in that: it comprises first power amplifier, the first LNA circuit, second power amplifier, the second LNA circuit, power supply and control circuit, the first output input connector (B1), the second output input connector (B2), and power supply and control circuit provide power supply and control signal;
First power amplifier comprises first input connector (A1), first adjustable attenuator (1), the first order amplifier (2) of first power amplifier, the first temperature compensation attenuator (3), the second level amplifier (4) of first power amplifier, the third level amplifier (5) of first power amplifier, the fourth stage amplifier (6) of first power amplifier, first directional coupler (7), first circulator (8), first radio-frequency (RF) switch (9) of first power amplifier, first coupler (10), second radio-frequency (RF) switch (11) of first power amplifier, first absorbing load (31), second absorbing load (32); First input connector (A1) connects the input of first adjustable attenuator (1), the output of first adjustable attenuator (1) connects the input of the first order amplifier (2) of first power amplifier, the output of the first order amplifier (2) of first power amplifier connects first temperature compensation attenuator (3) input, the output of the first temperature compensation attenuator (3) connects the input of the second level amplifier (4) of first power amplifier, the output of the second level amplifier (4) of first power amplifier connects the input of the third level amplifier (5) of first power amplifier, and the output of the third level amplifier (5) of first power amplifier connects the input of the fourth stage amplifier (6) of first power amplifier; The output of the fourth stage amplifier (6) of first power amplifier connects the input of first directional coupler (7), first directional coupler (7) output has two paths of signals, the first via output of first directional coupler (7) is connected with the first input end of second radio-frequency (RF) switch (11) of first power amplifier by the coupled end of first directional coupler (7), the second road output of the first power amplifier directional coupler (7) links to each other with first port of first circulator (8), second port output of first circulator (8) links to each other with the input of the first output input connector (B1), and the 3rd port of first circulator (8) links to each other with the input of first radio-frequency (RF) switch (9) of first power amplifier; First output of first radio-frequency (RF) switch (9) of first power amplifier links to each other with the input of first coupler (10), the output of first coupler (10) is connected with second input of second radio-frequency (RF) switch (11) of first power amplifier, the isolation end of first coupler (10) links to each other with first absorbing load (31), and-90 degree coupled end of first coupler (10) link to each other with second absorbing load (32); Second output of first radio-frequency (RF) switch (9) of first power amplifier links to each other with the input of the first order amplifier (12) of the first LNA circuit, and the output of second radio-frequency (RF) switch (11) of first power amplifier links to each other with second input of the 3rd radio frequency switch (14) of the first LNA circuit;
The first LNA circuit comprises the first order amplifier (12) of the first LNA circuit, the second level amplifier (13) of the first LNA circuit, the 3rd radio frequency switch (14), first dielectric filter (15) and first out connector (C1) of the first LNA circuit; The output of the first order amplifier (12) of the first LNA circuit is connected with the input of the second level amplifier (13) of the first LNA circuit, the first input end of the output of the second level amplifier (13) of the first LNA circuit and the 3rd radio frequency switch (14) of the first LNA circuit, the output of the 3rd radio frequency switch (14) of the first LNA circuit is connected with first dielectric filter (15) input, and the output of first dielectric filter (15) is connected with first out connector (C1);
Second power amplifier comprises second input connector (A2), second adjustable attenuator (16), the first order amplifier (17) of second power amplifier, the second temperature compensation attenuator (18), the second level amplifier (19) of second power amplifier, the third level amplifier (20) of second power amplifier, the fourth stage amplifier (21) of second power amplifier, second directional coupler (22), second circulator (23), first radio-frequency (RF) switch (24) of second power amplifier, second coupler (25), second radio-frequency (RF) switch (26) of second power amplifier, the 3rd absorbing load (33), the 4th absorbing load (34); Second input connector (A2) connects the input of second adjustable attenuator (16), the output of second adjustable attenuator (16) connects the input of the first order amplifier (17) of second power amplifier, the output of the first order amplifier (17) of second power amplifier connects second temperature compensation attenuator (18) input, the output of the second temperature compensation attenuator (18) connects the input of the second level amplifier (19) of second power amplifier, the output of the second level amplifier (19) of second power amplifier connects the input of the third level amplifier (20) of second power amplifier, and the output of the third level amplifier (20) of second power amplifier connects the input of the fourth stage amplifier (21) of second power amplifier; The output of the fourth stage amplifier (21) of second power amplifier connects the input of second directional coupler (22), the output of second directional coupler (22) has two paths of signals, the first via output of second directional coupler (22) is connected with the first input end of second radio-frequency (RF) switch (26) of second power amplifier by the coupled end of second directional coupler (22), the second road output of second directional coupler (22) links to each other with first port of second circulator (23), second port output of second circulator (23) links to each other with the input of the second output input connector (B1), and the 3rd port of second circulator (23) links to each other with the input of first radio-frequency (RF) switch (24) of second power amplifier; First output of first radio-frequency (RF) switch (24) of second power amplifier links to each other with the input of second coupler (25), the output of second coupler (25) is connected with second input of second radio-frequency (RF) switch (26) of second power amplifier, the isolation end of second coupler (25) links to each other with the 3rd absorbing load (33), and-90 degree coupled end of second coupler (25) link to each other with the 4th absorbing load (34); Second output of first radio-frequency (RF) switch (24) of second power amplifier links to each other with the input of the first order amplifier (27) of the second LNA circuit, and the output of second radio-frequency (RF) switch (26) of second power amplifier links to each other with second input of the 3rd radio frequency switch (29) of the second LNA circuit;
The second LNA circuit comprises the first order amplifier (27) of the second LNA circuit, the second level amplifier (28) of the second LNA circuit, the 3rd radio frequency switch (29), second dielectric filter (30) and second out connector (C2) of the second LNA circuit; The output of the first order amplifier (27) of the second LNA circuit is connected with the input of the second level amplifier (28) of the second LNA circuit, the first input end of the output of the second level amplifier (28) of the second LNA circuit and the 3rd radio frequency switch (29) of the second LNA circuit, the output of the 3rd radio frequency switch (29) of the second LNA circuit is connected with second dielectric filter (30) input, and the output of second dielectric filter (30) is connected with second out connector (C2).
CNU2008200667706U 2008-04-30 2008-04-30 3W multi-carrier power amplifier use in TD-SCDMA system base station Expired - Fee Related CN201215950Y (en)

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CN106026933A (en) * 2016-05-12 2016-10-12 成都九洲迪飞科技有限责任公司 High-efficiency power amplification module based on ADS load pull
CN111342779A (en) * 2020-04-14 2020-06-26 湖北楚航电子科技有限公司 Multichannel radio frequency power amplifier subassembly
CN111555998A (en) * 2020-04-21 2020-08-18 上海航天测控通信研究所 Down-conversion signal processing method and down-conversion assembly of satellite-borne atomic clock

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102291091A (en) * 2011-06-16 2011-12-21 熊猫电子集团有限公司 Linear microwave power amplifier
CN102291091B (en) * 2011-06-16 2014-07-23 熊猫电子集团有限公司 Linear microwave power amplifier
CN106026933A (en) * 2016-05-12 2016-10-12 成都九洲迪飞科技有限责任公司 High-efficiency power amplification module based on ADS load pull
CN106026933B (en) * 2016-05-12 2019-02-22 成都九洲迪飞科技有限责任公司 High efficiency power amplifier module based on ADS load balance factor
CN111342779A (en) * 2020-04-14 2020-06-26 湖北楚航电子科技有限公司 Multichannel radio frequency power amplifier subassembly
CN111555998A (en) * 2020-04-21 2020-08-18 上海航天测控通信研究所 Down-conversion signal processing method and down-conversion assembly of satellite-borne atomic clock
CN111555998B (en) * 2020-04-21 2023-03-24 上海航天测控通信研究所 Down-conversion signal processing method and down-conversion assembly of satellite-borne atomic clock

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