High voltage direct current generator
Technical field
The utility model relates to a kind of high voltage direct current generator.Be applicable to that power department, enterprise's power department carry out DC high potential test to equipment such as Zinc-Oxide Arrester, magnetic blowout arrester, power cable, generator, generator, transformer, switches.Especially, the related high voltage direct current generator of the utility model is the Portable DC high-voltage tester of new generation that manufactures and designs according to the industry standard DL/T848.1-2004 of State Grid " high voltage direct current generator general technical specifications ".
Background technology
Positive-negative polarity high voltage direct current generator of the prior art is general to adopt following structure to realize:
1, adopt two multiplication of voltage barrel structures: a positive polarity, a negative polarity, needing that when output polarity is changed equipment is all stopped, discharging, manually change the multiplication of voltage tube can realize.
This implementation increases manufacturing cost owing to adopt double pressure cylinder greatly; In the experimentation, need manual change polarity, inconvenient operation; Can not satisfy the requirement of the wide plain polar switching test of direct current.
2, adopt the multiplication of voltage tube of symmetrical structure to realize positive-negative polarity output.During experiment, manpower manual the multiplication of voltage tube fall turnback and reconnect the multiplication of voltage tube after, can carry out.
This implementation needs the multiplication of voltage tube is manually fallen turnback when the reverse of polarity, loses time; When high-voltage large-capacity equipment, also need hoisting device to cooperate, relatively waste time and energy; Because polar switching process complexity is time-consuming, can not satisfy the requirement of direct current fast polarity transfer test.
3, adopt pneumatic conversion equipment, rectification silicon stack inside polarity is changed, realize the output of direct current positive-negative polarity.
The integral device complex structure of this implementation, huge cost height; And very loaded down with trivial details during Installation and Debugging, can't move after the installation; Because adopt pneumatic structure, requiring of utility appliance is high.
Summary of the invention
The purpose of this utility model be to provide a kind of easy for installation, reversing speed fast, the high voltage direct current generator of low cost of manufacture.
To achieve the above object of the invention, the technical scheme that the utility model adopted is:
A kind of high voltage direct current generator, comprise the multiplication of voltage tube, the I.F.T. that is connected with the input end of multiplication of voltage tube, the multiplication of voltage tube comprises cylindrical shell, be arranged on silicon stack and a plurality of high-voltage capacitance of inner barrel, be used for high-voltage contact to test specimen output high pressure, a plurality of high-voltage capacitances connect into two discrete row along the y direction of cylindrical shell, be connected by changeover contact between the high-voltage capacitance, each silicon stack is rotating to be arranged between the two row high-voltage capacitances, have at least two kinds of connection status between silicon stack and the two row high-voltage capacitances, under every kind of connection status, silicon stack is with identical polar orientation, pass through changeover contact, be connected between the two row high-voltage capacitances according to the zigzag mode.
Because the employing of technique scheme, the utility model compared with prior art has the following advantages:
The utility model adopts rotating silicon stack, as long as turn the silicon stack direction simultaneously, make its with high-voltage capacitance between have different connection status, can realize the high pressure output of opposite polarity, be a kind of cheap for manufacturing cost, easy to operate high voltage direct current generator.
Description of drawings
Structural representation when Fig. 1 is in the output negative pole high pressure conditions for the utility model;
Structural representation when Fig. 2 is in the output cathode high pressure conditions for the utility model;
Wherein: 1, multiplication of voltage tube; 2, silicon stack; 3, high-voltage capacitance; 31, changeover contact; 4, high-voltage contact; 5, conversion push rod; 6, driving mechanism; 61, change-over panel; 62, conversion nut; 63, conversion screw rod; 64, motor; 65, conversion guide pillar; 66, stop means; 7, high pressure enter conductive film; 8, high pressure output conducting strip; 9, I.F.T.; 10, cylindrical shell; 11, low pressure enter conductive film.
Embodiment
As Fig. 1 or embodiment illustrated in fig. 2 in high voltage direct current generator, comprise multiplication of voltage tube 1, the I.F.T. 9 that is connected with the input end of multiplication of voltage tube 1, multiplication of voltage tube 1 comprises cylindrical shell 10, be arranged on silicon stack 2 and a plurality of high-voltage capacitance 3 of cylindrical shell 10 inside, be used for high-voltage contact 4 to test specimen output high pressure, a plurality of high-voltage capacitances 3 connect into two discrete row along the y direction of cylindrical shell 10, this two row high-voltage capacitance 3 is an axis of symmetry with the axis of cylindrical shell 10, symmetrical arrangement, be connected by changeover contact 31 between the high-voltage capacitance 3, each silicon stack 2 rotating being arranged between the two row high-voltage capacitances 3, have at least two kinds of connection status between silicon stack 2 and the two row high-voltage capacitances 3, under every kind of connection status, silicon stack 2 is with identical polar orientation, by changeover contact 31, be connected between the two row high-voltage capacitances 3 according to the zigzag mode.Multiplication of voltage tube 1 comprises that also one is used for the voltage of I.F.T. 9 outputs is inserted the high pressure enter conductive film 7 that is positioned at multiplication of voltage tube 1 one side high-voltage capacitances 3 and silicon stack 2, with a low pressure enter conductive film 11 that is used for the voltage low pressure end access of I.F.T. 9 outputs is positioned at multiplication of voltage tube 1 one side silicon stacks 2, being used for will be through the high pressure output conducting strip 8 of the output of the voltage after the multiplication of voltage, high pressure output conducting strip 8 is connected between the high-voltage capacitance 3 and high-voltage contact 4 of multiplication of voltage tube 1 other end high pressure enter conductive film 7, low pressure enter conductive film 11 and high pressure output conducting strip 8 rotating being connected between the two row high-voltage capacitances 3.
Multiplication of voltage tube 1 comprises that also two are respectively applied for the conversion push rod 5 that control silicon stack 2 is changed, a plurality of silicon stacks 2 rotating being connected on the same conversion push rod 5 of being separated by and being provided with under two kinds of connection status.Multiplication of voltage tube 1 also comprises the driving mechanism 6 that is used for 5 motions of control transformation push rod.Driving mechanism 6 comprise the conversion nut 62 that is fixedly connected with the change-over panel 61 that is connected of an end of conversion push rod 5, with change-over panel 61, with conversion nut 62 be meshed the conversion screw rod 63 that is connected, be used to drive motor 64, the conversion guide pillar 65 that passes change-over panel 61 of changing screw rod 63 rotations, the stop means 66 that is arranged on an end of changing guide pillar 65.
In the present embodiment, driving mechanism 6 comprises two conversion push rods 5, be positioned at the conversion push rod 5 in silicon stack 2 left sides and second of beginning from cylindrical shell 10 tops, the 4th, the 6th ... the rotating connection in left part of 2n (n gets positive integer) silicon stack 2, the conversion push rod 5 that is positioned at silicon stack 2 right sides with begin from cylindrical shell 10 tops first, the 3rd, the 5th ... the rotating connection in right part of 2n+1 (n gets positive integer) silicon stack 2, like this, when motor 64 moves up and down by screw rod 63 and engagement nut 62 drive change-over panels 61 thereon, it is the center with the run-on point that is connected with silicon stack 2 centers that conversion push rod 5 promptly affects an end of connection silicon stack 2 thereon thereupon, carry out lever and rotate, reach the purpose of conversion silicon stack 2 polar orientation.In the present embodiment, be provided with stop means 66 in the bottom of conversion guide pillar 65, change-over panel 61 carried out spacing, this just makes the action of driving mechanism 6 when the polar switching of silicon stack 2 is controlled more accurate.Whole transfer process can select for use mcu programming to control, to realize control cabinet one key operation.
Described high direct voltage output unit in this enforcement, when being in the output negative pole high pressure conditions, as shown in Figure 1, the right-hand end that is positioned at the high pressure output conducting strip 8 of cylindrical shell 10 upper ends is connected with first changeover contact 31 that is positioned at the silicon stack right side, its left end be positioned at cylindrical shell 10 top left hand high-voltage contacts 4 and be connected, this high-voltage contact 4 is as the output terminal of negative polarity high voltage direct current.Below high pressure output conducting strip 8, identical changeover contact is inserted with high pressure output conducting strip 8 in an end of first silicon stack 2, another end is connected with second changeover contact 31 in silicon stack 2 left sides, then, the 3rd of access silicon stack 2 right sides that silicon stack 2 joins according to the mode first place of Z font, the 4th in left side, the 5th on right side, the 6th in left side ... changeover contact 31, according to the number of every row's high-voltage capacitance that connects 3, analogize the connected mode of silicon stack 2 with above-mentioned rule.At this moment, the left end that is positioned at the high pressure enter conductive film 7 of silicon stack 2 belows is connected with the changeover contact 31 in below that is positioned at silicon stack 2 left sides, and connects the high-pressure side of the secondary coil of I.F.T. 9; The right-hand end that is positioned at the low pressure enter conductive film 11 of silicon stack 2 belows is connected with the changeover contact 31 in below that is positioned at silicon stack 2 right sides, and connects the low pressure end of the secondary coil of I.F.T. 9.
Described high direct voltage output unit in this enforcement, when being in the output cathode high pressure conditions, as shown in Figure 2, the left end that is positioned at the high pressure output conducting strip 8 of cylindrical shell 10 upper ends is connected with first changeover contact 31 that is positioned at the silicon stack left side, its right-hand end be positioned at right side, cylindrical shell 10 top high-voltage contact 4 and be connected, this high-voltage contact 4 is as the output terminal of positive polarity high voltage direct current.Below high pressure output conducting strip 8, identical changeover contact is inserted with high pressure output conducting strip 8 in an end of first silicon stack 2, another end is connected with second changeover contact 31 on silicon stack 2 right sides, then, silicon stack 2 is according to the 3rd of end to end access silicon stack 2 left sides of the mode of Z font, the 4th on right side, the 5th in left side, the 6th on right side ... changeover contact 31, according to the number of every row's high-voltage capacitance that connects 3, analogize the connected mode of silicon stack 2 with above-mentioned rule.At this moment, the right-hand end that is positioned at the high pressure enter conductive film 7 of silicon stack 2 belows is connected with the changeover contact 31 in below that is positioned at silicon stack 2 right sides, and the high-pressure side that connects the secondary coil of I.F.T. 9, the left end that is positioned at the low pressure enter conductive film 11 of silicon stack 2 belows is connected with the changeover contact 31 in below that is positioned at silicon stack 2 left sides, and connects the low pressure end of the secondary coil of I.F.T. 9.