CN201112360Y - Reaction cavity - Google Patents
Reaction cavity Download PDFInfo
- Publication number
- CN201112360Y CN201112360Y CNU200720142563XU CN200720142563U CN201112360Y CN 201112360 Y CN201112360 Y CN 201112360Y CN U200720142563X U CNU200720142563X U CN U200720142563XU CN 200720142563 U CN200720142563 U CN 200720142563U CN 201112360 Y CN201112360 Y CN 201112360Y
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- CN
- China
- Prior art keywords
- shield
- reaction chamber
- utility
- model
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 10
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
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- Drying Of Semiconductors (AREA)
Abstract
The utility model relates to a reaction cavity suitable for plasma processing machines. The reaction cavity comprises an opening, a curtain board arranged on the surface of the opening, wherein the curtain board is opposite to the surface of a chip, and the curtain board has a rough surface. The rough surface of the curtain board can increase the coated area, and reduce peeling-off chance, thereby alleviating the pollution of particles.
Description
Technical field
The utility model relates to a kind of semiconductor equipment, and particularly relates to the reaction chamber that uses in a kind of plasma etch process.
Background technology
Plasma is a kind of gas (partially ionized gas) that is subjected to partial ionization, via the acceleration of electric field, molecule or atomic group clashed into produces ion reaction.In semiconductor technology, plasma (plasma) is subjected to using widely, for example is to be applied to cleaning (cleaning), coating (coating), sputter (sputtering), plasma activated chemical vapour deposition (plasma CVD), ion injection (ionimplantation) or etching (etching) etc.
No matter be plasma clean machine, plasma etching machine or plasma-deposited machine etc., the capital utilizes the mode of ion bombardment (for example bombarding target or wafer surface) to carry out, this makes can produce particulate on reactor wall and the wafer, pollutes.
Fig. 1 and Fig. 2 are the schematic diagrames that illustrates known submerged plasma system and reaction chamber and wafer.Ion implantor device with the submerged plasma system among Fig. 1 and Fig. 2 (plasma flood system) is an example, the reaction chamber 100 of known submerged plasma system 105 has an opening 110, the ray 120 that produces in the reaction chamber 100 clashes into to wafer 130 by penetrating in the opening 110.Wherein, the shield 140 and the distance between wafer 130 surfaces on reaction chamber 100 openings 110 surfaces are very short, be about about 10 centimetres, and shield 140 have smooth surface.
In the process of carrying out the ion injection, can on wafer 130, form one deck patterning photoresist earlier usually, cover the not zone of desire injection ion.Along with the carrying out that ion injects, the degassing that produces in the photoresist (outgas) can be in large quantities attached to the surface of opening 110.When these outgas when too much, can cause and peel off (peeling) phenomenon, and cause the formation of particulate, these particulates can pollute reaction chamber and wafer 130 surfaces, cause the quantity of defective to heighten.
The utility model content
In view of this, one of the purpose of this utility model is to provide a kind of reaction chamber, and it has coarse surface, reduces the particulate that ion bombardment causes, and then reduces the number of defective, improves rate of finished products.
The utility model proposes a kind of reaction chamber, be applicable to the plasma process machine, reaction chamber has opening, and open surfaces is provided with shield, and wherein, shield is surperficial relative with wafer, and the surface of shield is coarse surface.
According to the described reaction chamber of embodiment of the present utility model, wherein coarse surface comprises wavy surface or hackly surface.
According to the described reaction chamber of embodiment of the present utility model, wherein the surface of shield comprises many bands or many straight burrs.
According to the described reaction chamber of embodiment of the present utility model, wherein the surface of shield comprises the projection of a plurality of dispersions.
According to the described reaction chamber of embodiment of the present utility model, wherein shield comprises shield and following shield, is fixed in open surfaces.
According to the described reaction chamber of embodiment of the present utility model, wherein go up shield and press from both sides an angle with following shield.
According to the described reaction chamber of embodiment of the present utility model, wherein go up shield and be the ㄇ font respectively with following shield.
According to the described reaction chamber of embodiment of the present utility model, wherein the material of shield comprises graphite.
According to the described reaction chamber of embodiment of the present utility model, wherein the material of reaction chamber comprises graphite.
According to the described reaction chamber of embodiment of the present utility model, wherein reaction chamber is applicable to submerged plasma system (Plasma Flood System).
According to the described reaction chamber of embodiment of the present utility model, wherein the plasma process machine comprises that plasma clean machine, plasma etching machine, plasma-deposited machine and plasma inject machine.
The utility model has the reaction chamber opening of rough surface because of employing, therefore, in the step of carrying out plasma process, can increase the surface area that adheres to coating effectively, and reduce the chance of peeling off, and not only significantly reduced the defective number, improve the rate of finished products of processing, also help to prolong the useful life of shield, save manufacturing cost.
For above-mentioned and other purposes, feature and advantage of the present utility model can be become apparent, preferred embodiment cited below particularly, and in conjunction with the accompanying drawings, be described in detail below.
Description of drawings
Fig. 1 is the structural representation that illustrates known submerged plasma system.
Fig. 2 is the schematic diagram that illustrates known its reaction chamber of submerged plasma system and wafer.
Fig. 3 A is the structure chart that illustrates a kind of reaction chamber of the utility model embodiment.
Fig. 3 B is the shield top view that illustrates a kind of reaction chamber of the utility model embodiment.
Fig. 3 C is the shield profile that illustrates a kind of reaction chamber of the utility model embodiment.
Fig. 4 is that the reaction chamber shield that illustrates the utility model experimental example is transformed preceding and improved defective number figure.
The simple symbol explanation
100,300: reaction chamber
105: the submerged plasma system
110,310: opening
120: ray
130: wafer
140,340: shield
340a: go up shield
340b: following shield
350: screw
Embodiment
Fig. 3 A is the structure chart that illustrates a kind of reaction chamber of the utility model embodiment.Fig. 3 B is the shield top view that illustrates a kind of reaction chamber of the utility model embodiment.Fig. 3 C is the shield profile that illustrates a kind of reaction chamber of the utility model embodiment.
Present embodiment is to be that example explains with the reaction chamber in the submerged plasma system, please refer to Fig. 3 A, Fig. 3 B and Fig. 3 C, and this reaction chamber 300 is applicable to the ion implantor device (not illustrating) of plasma.
The material of reaction chamber 300 for example is graphite or aluminium, and ray penetrates the surface of bump wafer (not illustrating) via the opening 310 of reaction chamber 300.In the present embodiment, submerged plasma system (can with reference to Fig. 1) is used for to the wafer implantation step that mixes, and ray for example is an ion beam, can penetrate via opening 310, flows into wafer (relative position of wafer and reaction chamber opening can with reference to shown in Figure 2).
The surface of reaction chamber 300 openings 310 is provided with shield 340.The material of shield 340 is for example identical with reaction chamber 300, as aluminium or graphite, is preferably graphite.Wherein, shield 340 is surperficial relative with wafer, and the surface of shield 340 is coarse surface.Alleged herein coarse surface can be wavy surface (shown in Fig. 3 B), or hackly surface.The surface of shield 340 for example has many bands, and shown in Fig. 3 A, Fig. 3 B, certainly, shield 340 surfaces also can have many straight burrs.In another embodiment, the surface of this shield also can be provided with the projection of a plurality of dispersions and form this coarse surface.
Please refer to Fig. 3 A and 3B, shield 340 can be divided into shield 340a and two parts of following shield 340b.Last shield 340a is fixed in the first half surface of reaction chamber 300 openings 310, and following shield 340b then is fixed in the Lower Half surface of reaction chamber 300 openings 310.Last shield 340a and following shield 340b for example are fixed on the reaction chamber 300 with screw 350, and closely join with reaction chamber 300 (shown in Fig. 3 C).This two for example be the shape that cooperates opening 310, is the ㄇ font respectively, and go up between shield 340a and the following shield 340b and accompany an angle, and it for example is the obtuse angle greater than 90 °.
Because the surface of shield 340 is coarse surface, can increase the surface area of shield 340 whole coatings (coating), reduce the situation of peeling off.So not only can alleviate the chance that particulate generates, help to keep the cleaning of reaction chamber 300 and wafer surface, and reduce the number of defective.And the useful life of shield, (lifetime) also can prolong, and then reduced manufacturing cost.
Special one carry be, though be that reaction chamber with employed submerged plasma system in the ion implantation technology is that example explains in the foregoing description, yet the utility model is not limited to be used in this system.Other plasma process machines, plasma as plasma clean machine, plasma etching machine, plasma-deposited machine and other kinds injects machine, can use this kind reaction chamber that the utility model proposes, utilization has the shield of rough surface, reaches the advantage that reduces defective number etc.
Below, further specify the utility model just with an experimental example.Fig. 4 is that the reaction chamber shield that illustrates the utility model experimental example is transformed preceding and improved defective number figure.
Please refer to Fig. 4, in this experimental example, be with the 20th week be boundary, the 20th week (W20) is used the reaction chamber that the utility model proposes before; As for then having used the reaction chamber that the utility model proposed after the 20th week.In this experimental example, the opening setting of reaction chamber be wavy shield.
As shown in Figure 4, measured before defective number mean value is 223.3 the 20th week (W20); The 20th week (transforming wavy shield as), measured afterwards defective number mean value then was 42.2.Clearly, the shield of reaction chamber opening has been done after the appropriate transformation, defective number mean value has declined to a great extent 181.1.Therefore, the utility model can suppress the generation of peeling off really significantly, reduces the number of defects of wafer, improves rate of finished products.And also can prolong the useful life of shield, reaches the effect of saving manufacturing cost.
Though the utility model discloses as above with preferred embodiment; yet it is not in order to limit the utility model; any those skilled in the art; in not breaking away from spirit and scope of the present utility model; when can doing a little change and modification, therefore protection range of the present utility model with claims the person of being defined be as the criterion.
Claims (10)
1. reaction chamber is applicable to the machine of plasma process to it is characterized in that this reaction chamber has opening that this open surfaces is provided with shield, and wherein, this shield is surperficial relative with wafer, and the surface of this shield is coarse surface.
2. reaction chamber as claimed in claim 1 is characterized in that wherein this coarse surface comprises wavy surface or hackly surface.
3. reaction chamber as claimed in claim 1 is characterized in that wherein this shield surface comprises many bands.
4. reaction chamber as claimed in claim 1 is characterized in that wherein this shield surface comprises many straight burrs.
5. reaction chamber as claimed in claim 1 is characterized in that this shield surface wherein comprises the projection of a plurality of dispersions.
6. reaction chamber as claimed in claim 1 is characterized in that wherein this shield comprises shield and following shield, is fixed in this open surfaces.
7. reaction chamber as claimed in claim 6 is characterized in that wherein should going up shield and this time shield presss from both sides an angle.
8. reaction chamber as claimed in claim 6 is characterized in that wherein should going up shield and this time shield is the ㄇ font respectively.
9. reaction chamber as claimed in claim 1 is characterized in that wherein the material of this shield comprises graphite.
10. reaction chamber as claimed in claim 1 is characterized in that wherein the material of this reaction chamber comprises graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720142563XU CN201112360Y (en) | 2007-05-22 | 2007-05-22 | Reaction cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200720142563XU CN201112360Y (en) | 2007-05-22 | 2007-05-22 | Reaction cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201112360Y true CN201112360Y (en) | 2008-09-10 |
Family
ID=39964106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200720142563XU Expired - Fee Related CN201112360Y (en) | 2007-05-22 | 2007-05-22 | Reaction cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201112360Y (en) |
-
2007
- 2007-05-22 CN CNU200720142563XU patent/CN201112360Y/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080910 Termination date: 20100522 |