CN201084751Y - An organic electro-luminescent device - Google Patents
An organic electro-luminescent device Download PDFInfo
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- CN201084751Y CN201084751Y CN 200720152011 CN200720152011U CN201084751Y CN 201084751 Y CN201084751 Y CN 201084751Y CN 200720152011 CN200720152011 CN 200720152011 CN 200720152011 U CN200720152011 U CN 200720152011U CN 201084751 Y CN201084751 Y CN 201084751Y
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Abstract
The utility model belongs to photoelectric material application technical field, particularly to an organic electroluminescent Light Emitting Diode, comprising a substrate layer (101), an anode (102), a cavity injection layer or a cavity transmission layer (103), a emitting layer (105), an electronic injection layer or an electronic transmission layer (106) and a cathode (107) positioned in sequence from the bottom to the top. The utility model is characterized in that the cavity injection layer or the cavity transmission layer (103) is a doped layer, mixed with a doped material; the material can improve and increase the conductivity of the organic semiconductor, and provide better ohmic contact; in addition, due to the low volatility, the material has a high repeatability when used to make doped Organic Light Emitting Diode by vacuum evaporation plating method; the cross pollution problem of vacuum chamber caused by high air pressure of the material can be avoided effectively.
Description
Technical field
The invention belongs to photoelectric material applicating technology field, be specially the organic electroluminescence device that contains low volatility p type organic semiconductor doping system material.
Technical background
From the Tang of Tang research group of Kodak in 1987, C.W. wait and delivered thin-film multilayer organic electroluminescence device (Organic Light-emitting Diodes, OLED, Tang, C.W.Van Slyke, S.A.Appl.Phys.Lett.1987,51,913.) since, organic flat panel display becomes the demonstration product of the another generation marketization after liquid crystal display.Characteristics such as OLED has self-luminous, the reaction time is fast, the visual angle is wide, cost is low, manufacture craft is simple, resolution is good, brightness high and low pressure DC driven promise to be the display device of 21 century ideals of human being very much.Discover, at the transferring material layer of OLED device architecture, the electric conductivity that can improve device of suitably introduce mixing, ohmic contact is provided, helps the injection of charge carrier, thereby improve the performance of device significantly.For example, improve the power efficiency and the reduction driving voltage of device.J.Huang etc. have reported that one has been used n type and the hole of p type doping and the OLED device of electron transfer layer, when 2.9V, just can reach 1000cd/m
2Brightness (Huang, J.Pfeiffer, M.Werner, A.Blockwitz, J.Leo, K.Liu, S.Appl.Phys.Lett.2002,80,139.).In doping system, active alkali metal lithium or caesium are owing to good electron is used as n type dopant material to output capacity, and they can obtain by the approach such as decomposition of compound.The material that is used for the doping of p type has F4TCNQ (2,3,5,6-tetrafluoro 7,7,8,8-four cyano quinone bismethane), oxidant SbCl5, oxidant FeCl
3, oxidant I
2Deng.Existing dopant material on the one hand because less atom or molecular radius are easy to the organic layer of diffusion mobility to other, causes the functional lability and the efficient reduction of device; On the other hand, the F4TCNQ of molecule-type etc. are because its higher volatility not only can cause the cross pollution of deposition system, also can cause the thermally labile of device and reduce the repeatability (Drechsel that device prepares, J.Pfeiffer, M.Zhou, X.Nollau, A.Leo, K.Synth.Metal.2002,127,201; Wellmann, P.Hofmann, M.Zeika, O.Werner, A.Birnstock, J.Meerheim, R.He, G.Walzer, K.Pfeiffer, M.Leo, K.Journal of the SID, 2005,13 (5), 393; Chang, C.-C.Hsieh, M.T.Chen, J.-F.Hwang, S.-W.Ma, J.-W.Chen, C.H.SID 06 Digest, 20061106.).F4TCNQ is up to now, the most the widely used p type of people dopant material.But its high volatile volatile not only can cause the cross pollution of deposition system, also can cause the thermally labile of device and reduce the repeatability that device prepares, and therefore the functional stabilization of this type of device is also challenged; In addition, because limitation (the minimum vacant track LUMO in the molecule of its electron energy level, be 5.24eV), make it form effective doping system (the highest occupied molecular orbital HOMO in the molecule of material of main part is less than 5.24eV) with the small part hole mobile material.Problem based on above-mentioned existence, the NovaLED company of Germany has applied for a patent that replaces the F4TCNQ material, be used for organic blended semiconductor (Kuehl, O.Hartmann, H.Zeika, O.Pfeiffer, M.Zheng, Y.2005, US6908783B1), the p type doping system that wherein really can be used for OLED does not have clear and definite elaboration and embodiment.From one piece of SID article of above-mentioned researcher, long-life doping OLED device of having reported for work, the material of main part (HT1) that has wherein used a new p type dopant material (NDP2) and be complementary with it, but they do not provide structure (Wellmann, P.Hofmann, the M.Zeika of material, O.Werner, A.Birnstock, J.Meerheim, R.He, G.Walzer, K.Pfeiffer, M.Leo, K.Journal of the SID, 2005,13 (5), 393).The present invention will disclose organic p type doping system of a class utility model at the OLED system, and nobody used dopant material wherein.By the embodiment of abundance, can prove feasibility, the stability of body series and the premium properties of having introduced the OLED device of body series.
Summary of the invention
The objective of the invention is to develop a kind of new organic electroluminescence device that contains low volatility p type organic semiconductor doping system material.
The invention provides a kind of organic electroluminescence device, comprising the substrate layer that sets gradually from the bottom to top, anode, hole injection layer or hole transmission layer, luminescent layer, electron injecting layer or electron transfer layer and negative electrode.Wherein hole injection layer or hole transmission layer are the hole injection layer of doping or the hole transmission layer of doping.Above the hole transmission layer of hole injection layer that mixes or doping, preferably be provided with resilient coating.
Be doped with a kind of 7,7,8 of two fluorine replacements, 8-four cyano quinone bismethane derivative dopant material of containing in the hole injection layer of described doping or the hole transmission layer of doping.Described dopant material is compound 1, compound 2, has following feature structure:
Compound 1 compound 2
Wherein, R is the special constant (σ in Hami
p) electrophilic atom greater than 0.3 or group (R ≠ F), σ
pValue can in physical chemistry handbook commonly used, (for example find, Lyman, W.J.Reehl, W.F.Rosenblatt, D.H. " Handbook of chemical property estimation methods:environmental behavior of organic compounds ", New York:McGraw-Hill, c1982.).Comprising: CF
3, CN, NO
2, C
6F
5Deng.
When the R in the compound 1 is CN, dopant material called after F2-HCNQ; When the R in the compound 1 ≠ CN, and compound 2 all is called the derivative of F2-HCNQ.
In the hole injection layer of described doping or the hole transmission layer of doping, the energy level of the highest occupied molecular orbital of material of main part is between 4.9eV and 6.5eV, because different measurement means, caused energy level error is within positive and negative 0.3 scope.Comprising 2-TNATA, NPB, VOPC, ZnPC, TDATA, TPD etc.
Substrate layer is the supporting layer of device, can be quartz plate, sheet glass, sheet metal or film, plastic film.Anode places on the substrate layer, usually, is made by the higher metal of work function (gold, silver, aluminium, nickel etc.), metal oxide (indium oxide, tin oxide etc.), carbon black, conducting polymer etc.Negative electrode is to be made of the metal or metal alloy than low work function, for example: magnesium, aluminium, silver, indium metal or their alloy.The thickness that negative electrode and anode are general is 5-1000nm, and its making can be vacuum evaporation or sputter; If material is very thin particle, as metal, carbon black, metal oxide, conducting polymer etc., electrode can obtain by the spin coating of solution; In addition, electrochemical deposition also can make corresponding electrode.Further, negative electrode and anode can have sandwich construction, and for example, negative electrode can be made of the lithium fluoride of 0.1-1nm and the aluminium of 10-100nm.Based on self luminous requirement, it is transparent that an electrode will be arranged at least, and the transmitance more than 60% is arranged.Luminescent layer can be that material of main part is luminous, also can be that luminescent material is doped in the material of main part; Can be the single-shot photosphere, also can be multi-luminescent layer; Luminescent material wherein promptly can be that fluorescence also can be phosphorescence.Similarly, electron injecting layer and electron transfer layer can be individual layers, also can be multilayer, and its composition of every layer promptly can be that homogenous material also can be a composite material.Especially, electron injecting layer and transferring material will have good transmission electronic ability, and bigger electron affinity energy is arranged, for example, 4,7-diphenyl 1,10-phenanthroline and oxine aluminium.
Key component of the present invention is: contain hole injection layer or the hole transmission layer and the resilient coating thereof of low volatility P type dopant material, thickness is respectively 5-400nm, 2-20nm.In organic electroluminescence device, mixed organic p N-type semiconductor N system of F2-HCNQ and derivative thereof, can be used as the hole injection layer and the hole transmission layer of anode charge carrier, can guarantee that not only organic material contacts with the good ohmic of electrode, help the injection in hole, can also improve the efficiency of transmission in hole, reduce device drive voltage, the efficient of device is improved.Further, because the powerful electrophilic characteristic of F2-HCNQ and derivative thereof, in the OLED device, F2-HCNQ and derivative thereof can directly be entrained in the bigger hole mobile material of HOMO, save hole injection layer, have simplified device architecture.
F2-HCNQ and derivative thereof can be the vacuum evaporation of discrete source separately, the vacuum evaporation after the blend in same source, the spin coating after the blend, printing etc. to the doping method of material of main part.F2-HCNQ and derivative thereof to the doping content of material of main part between 20% and 0.01%.
In a word, the present invention has disclosed the very strong electron acceptor organic molecule of a class, that is: 3,6-two fluoro-2,5,7,7,8,8-six cyano group quinone bismethane (F2-HCNQ) and derivatives thereof, in organic electroluminescence device,, can form p type doping system with most hole mobile material as good p type dopant material.Utilize the doping system of F2-HCNQ, not only can obtain excellent conducting performance and ohmic contact preferably is provided, and owing to the device of this material of the material feasible application of thermal stability preferably has excellent function stability and long life-span.Prior, because the lower volatility of this type of material, when utilizing them to take the mode of vacuum evaporation to make to be doped with organic electroluminescence devices, repeatable high, since the vacuum chamber cross-contamination issue that the vapour pressure height of material causes can avoid effectively.On the other hand, because the better electrophilic of this quasi-molecule, the range of choice of material of main part is also correspondingly widened.
Description of drawings
Fig. 1. contain the organic electroluminescence device structure of low volatility P type dopant material
The cyclic voltammetric characteristic of Fig. 2 .F2-HCNQ and F4TCNQ
The thermogravimetic analysis (TGA) of Fig. 3 .F2-HCNQ and F4TCNQ
The vacuum evaporation speed of Fig. 4 .F2-HCNQ and F4TCNQ and the relation of temperature
Fig. 5. use the i-v curve of the 2-TNATA hole device of F2-HCNQ doping
Fig. 6. behind the high annealing, the i-v curve of F2-HCNQ/2-TNATA hole device, embedding figure is the situation of F4TCNQ/2-TNATA hole device.
Embodiment
In order to understand the content of patent of the present invention better, further specify technical scheme of the present invention below by concrete example and legend, but these embodiments do not limit the present invention, and other application in the invention essential scope and variation and modification comprise in the present invention too.
Fig. 1. showed the structure 100 of the organic electroluminescence device that mixes.Wherein: represent substrate layer for 101 layers, represent anode for 102 layers, the hole injection layer of 103 layers of representative doping or the hole transmission layer of doping, 104 layers of representative prevent the resilient coating of dopant material to the organic layer diffusion, 105 layers of representative luminescent layer, represent electron injecting layer and electron transfer layer for 106 layers, represent negative electrode for 107 layers.Substrate layer 101 is supporting layers of device 100, can be quartz plate, sheet glass, sheet metal or film, plastic film.Anode 102 places on the substrate layer 101, usually, is made by the higher metal of work function (gold, silver, aluminium, nickel etc.), metal oxide (indium oxide, tin oxide etc.), carbon black, conducting polymer etc.Negative electrode 107 is to be made of the metal or metal alloy than low work function, for example: magnesium, aluminium, silver, indium metal or their alloy.Negative electrode 107 and anode 102 general thickness are 5-1000nm, and its making can be vacuum evaporation or sputter; If material is very thin particle, as metal, carbon black, metal oxide, conducting polymer etc., electrode can obtain by the spin coating of solution; In addition, electrochemical deposition also can make corresponding electrode.Further, negative electrode and anode can have sandwich construction, and for example, negative electrode 107 can be made of the lithium fluoride of 0.1-1nm and the aluminium of 10-100nm.Based on self luminous requirement, it is transparent that an electrode will be arranged at least, and the transmitance more than 60% is arranged.Luminescent layer 105 can be that material of main part is luminous, also can be that luminescent material is doped in the material of main part; Can be the single-shot photosphere, also can be multi-luminescent layer; Luminescent material wherein promptly can be that fluorescence also can be phosphorescence.Similarly, electron injecting layer and electron transfer layer 106 can be individual layers, also can be multilayer, and its composition of every layer promptly can be that homogenous material also can be a composite material.Especially, electron injecting layer and transferring material will have good transmission electronic ability, and bigger electron affinity energy is arranged, for example, 4,7-diphenyl 1,10-phenanthroline and oxine aluminium.
103 and 104 layers is key component of the present invention: contain hole injection layer or the hole transmission layer and the resilient coating thereof of low volatility P type dopant material, thickness is respectively 5-400nm, 2-20nm.In organic electroluminescence device, mixed organic p N-type semiconductor N system of F2-HCNQ and derivative thereof, can be used as the hole injection layer and the hole transmission layer of anode charge carrier, can guarantee that not only organic material contacts with the good ohmic of electrode, help the injection in hole, can also improve the efficiency of transmission in hole, reduce device drive voltage, the efficient of device is improved.Further, because the powerful electrophilic characteristic of F2-HCNQ and derivative thereof, in the OLED device, F2-HCNQ and derivative thereof can directly be entrained in the bigger hole mobile material of HOMO, save hole injection layer, have simplified device architecture.
In 103 layers of Fig. 1 device 100, dopant material is compound 1, compound 2, has following feature structure:
Compound 1 compound 2
Wherein, R is the special constant (σ in Hami
p) electrophilic atom greater than 0.3 or group (R ≠ F), σ
pValue can in physical chemistry handbook commonly used, (for example find, Lyman, W.J.Reehl, W.F.Rosenblatt, D.H. " Handbook of chemical property estimation methods:environmental behavior of organic compounds ", New York:McGraw-Hill, c1982.).Comprising: CF
3, CN, NO
2, C
6F
5Deng.
When the R in the compound 1 is CN, dopant material called after F2-HCNQ; When the R in the compound 1 ≠ CN, and compound 2 all is called the derivative of F2-HCNQ.
In 103 layers of Fig. 1 device 100, the material of main part that mates with dopant material is that the hole is injected or transferring material, the energy level of highest occupied molecular orbital that it is characterized in that electronics is between 4.9eV and 6.5eV, because different measurement means, caused energy level error is within positive and negative 0.3 scope.Comprising 2-TNATA, NPB, VOPC, ZnPC, TDATA, TPD etc.
In 30 milliliters 225 ℃ diphenyl ether, add fast 341.8 milligrams 2,5-dicyano-3,6-two is fluorine-based-1,4-two (tert-butyl group dicyano methyl) benzene.Mixed solution stirred 1 minute under 225 ℃, was cooled fast to 40 ℃, and diluted with the 30ml ether.KHCO with 10ml 10%
3Extract three times, merge water, and filter.The KCl that adds 15g in the filtrate after the stirred for several minute, obtains the sylvite precipitation of near-black.After the filtration, use 10%, 5% KCl and absolute ether drip washing successively.Dried black powder is dissolved in the water of 30ml, gets red solution after the filtration.With 1.5g AgNO
3Be dissolved in the 30ml water, add above-mentioned red solution again, black precipitate produces at once.Filter, wash, after methyl alcohol and the absolute ether drip washing, air drying gets silver salt.The silver salt of gained is added the 20ml anhydrous acetonitrile, and the 90ml anhydrous acetonitrile of 140mg iodine is added, after stirring, filter.The decompression of solvent in the solution is removed, and the dark brown solid of gained is 1 * 10
-5Torr is distillation down, gets the pale brown look product of 50mg.Fusing point, 309 ℃ (decomposition); High resolution mass spectrum: MS:m/z 290.0159 (M
-, theoretical value: 290.0158, error: 0.3448ppm); Elementary analysis calculated value (C
14F
2N
6), C:57.95%, H:0, N:28.96%; Experiment value, C:57.39%, N:28.55%, H:0.564%; Fourier transform infrared spectroscopy (KBr, cm
-1): 2202,1630 (broad peaks), 1462,1335,919; UV, visible light light absorption (CH
2Cl
2, λ/log ε): 402nm/4.23.
The cyclic voltammetric test of embodiment 2, F2-HCNQ and F4TCNQ relatively
Prepare F2-HCNQ and the F4TCNQ solution to be measured of 0.001M respectively as the acetonitrile solution of assisted electrolysis matter with 0.1M TBAP (Tetrabutylammonium perchlorate).Be that reference electrode, Pt are that auxiliary electrode, fibrous glass carbon are on the electrochemical workstation of work electrode with Ag/AgCl, the reduction potential that scans rate test liquid to be measured with 0.1V/s the results are shown in Figure 2.The necessary condition that forms p type doping system is that the highest electron orbit (HOMO) that occupies of material of main part molecule is close with minimum vacant track (LUMO) energy level of doping molecule, and in other words, the compound that reduction potential is big can mate more material of main part.Fig. 2 shows that under identical condition, the reduction potential of F2-HCNQ is 0.87V, greater than F4TCNQ reduction potential 0.26V.The light absorption energy gap of compounding ingredient, the LUMO that can extrapolate F2-HCNQ is 5.59eV, the LUMO of F4HCNQ is 5.33eV.Therefore, F2-HCNQ is easier to accept electronics, and bigger LUMO is arranged, and F2-HCNQ can be widened the range of choice of material of main part as dopant material.
The heat decomposition temperature test of embodiment 3, F2-HCNQ and F4TCNQ relatively
Get F2-HCNQ and the F4TCNQ material of about 5mg respectively, under the atmosphere of nitrogen, their the weight change situation of rate analysis with 20 ℃/min the results are shown in Fig. 3.When F2-HCNQ lost 5% weight, temperature was 372.2 ℃, and 5% the weightless temperature of F4TCNQ is 256.8 ℃, well below F2-HCNQ; This shows that F2-HCNQ has better thermal stability than F4TCNQ.
The vacuum evaporation speed of embodiment 4, F2-HCNQ and F4TCNQ and the comparison of temperature relation
Evaporation bit with F2-HCNQ and the F4TCNQ of about 30mg loads on vacuum coating equipment respectively is evacuated to 1 * 10
-6Torr.Progressively heat up, the evaporation rate of test material and temperature relation the results are shown in Fig. 4.When the evaporation rate of F2-HCNQ increases to 0.05 by 0.01
During/sec, evaporating temperature is increased to 212 ℃ by 187, and the evaporating temperature of corresponding F4TCNQ is to be increased to 154 ℃ by 131, this shows that the volatility of F2-HCNQ is lower than F4TCNQ, and it has evaporates controlled and low contaminative preferably.Therefore, when taking the mode of vacuum evaporation to make the doped organic semiconductor film, use F2-HCNQ repeatable high, since the vacuum chamber cross-contamination issue that the vapour pressure height of material causes can avoid effectively; And the function of device has good stable.
This examples show the hole transport device for preparing as dopant material of F2-HCNQ.With ito glass one after the other in cleaning agent and deionized water with ultrasonic waves for cleaning 30 minutes.Vacuumize 2 hours (105 ℃) then, the UV/ozone of again ito glass being done 25 minutes is handled, and is sent to preparation organic membrane and metal electrode in the vacuum chamber.This experiment comprises two devices, and structure is respectively: ITO/2-TNATA (60nm)/Au (device one) and ITO/2-TNATA:2%F2-HCNQ (60nm)/Au (device two).Wherein, ITO is that square resistance is the transparency electrode of 10-20 Ω, and 2-TNATA is 4,4 ', 4 " and-three (N-(2-naphthyl)-N-phenyl ammino) triphenylamine, be the hole transport semiconductor.As seen from Figure 5, the device two of the F2-HCNQ that mixed has good hole to inject and conductivity, its current density ratio device one exceed two orders of magnitude.
Embodiment 6
This examples show F2-HCNQ as dopant material, and the high-temperature heat-resistance performance of hole transport device of preparation.With ito glass one after the other in cleaning agent and deionized water with ultrasonic waves for cleaning 30 minutes.Vacuumize 2 hours (105 ℃) then, the UV/ozone of again ito glass being done 25 minutes is handled, and is sent to preparation organic membrane and metal electrode in the vacuum chamber.This experiment comprises three devices, structure is identical, for: ITO/2-TNATA:2%F2-HCNQ (60nm)/Au (device three, device four and device five), wherein ITO is that square resistance is the transparency electrode of 10-20 Ω, 2-TNATA is 4,4 ', 4 "-three (N-(2-naphthyl)-N-phenyl ammino) triphenylamine is the hole transport semiconductor.Measure immediately after device three preparation, and device four and device five will be under high vacuum (1 * 10
-6Torr) heated 1 hour down at 65 ℃ and 85 ℃ respectively, after cooling, measure again.As seen from Figure 6, through the device four and the device five of high annealing, compare with device three, i-v curve has reflected the good temperature resistance of F2-HCNQ material not respectively, has guaranteed device stablizing of function at high temperature.
Embodiment 7
This examples show F4TCNQ as dopant material, and the high-temperature heat-resistance performance of hole transport device of preparation.With ito glass one after the other in cleaning agent and deionized water with ultrasonic waves for cleaning 30 minutes.Vacuumize 2 hours (105 ℃) then, the UV/ozone of again ito glass being done 25 minutes is handled, and is sent to preparation organic membrane and metal electrode in the vacuum chamber.This experiment comprises three devices, structure is identical, for: ITO/2-TNATA:2%F4TCNQ (60nm)/Au (device six, device seven and device eight), wherein ITO is that square resistance is the transparency electrode of 10-20 Ω, 2-TNATA is 4,4 ', 4 "-three (N-(2-naphthyl)-N-phenyl ammino) triphenylamine is the hole transport semiconductor.Measure immediately after device six preparation, and device seven and device eight will be under high vacuum (1 * 10
-6Torr) heated 1 hour down at 65 ℃ and 85 ℃ respectively, after cooling, measure again.Among the embedded figure by Fig. 5, as can be seen, compare with device six through the device seven of high annealing, current density seriously reduces.Reflected material system that F4TCNQ mixes at high temperature, unstable properties loses the function of hole transport easily.
Embodiment 8
This examples show F2-HCNQ as dopant material, the electroluminescent device that 2-TNATA prepares as material of main part.With ito glass one after the other in cleaning agent and deionized water with ultrasonic waves for cleaning 30 minutes.Vacuumize 2 hours (105 ℃) then, the UV/ozone of again ito glass being done 25 minutes is handled, and is sent to preparation organic membrane and metal electrode in the vacuum chamber.The device architecture of this experiment is: ITO/2-TNATA:2%F2-HCNQ (60nm)/NPB (10nm)/Alq (60nm)/LiF (0.8nm)/Al (60nm) (device nine).Wherein ITO is the transparency electrode of square resistance 10-20 Ω, and NPB is N, N '-diphenyl-N, N '-(1-naphthyl) 4,4 '-benzidine; Alq is an oxine aluminium, and 2-TNATA is 4,4 ', 4 " and-three (N-(2-naphthyl)-N-phenyl ammino) triphenylamine.The voltage that opens of this device is 2.6V; When brightness was 100cd/A, driving voltage was 3.8V; 20mA/cm
2The time, driving voltage is 5.5V, and current efficiency is 5.15cd/A, and power efficiency is 2.941m/W.
Embodiment 9
This examples show save hole injection layer, F2-HCNQ is as dopant material, the electroluminescent device that NPB prepares as material of main part.With ito glass one after the other in cleaning agent and deionized water with ultrasonic waves for cleaning 30 minutes.Vacuumize 2 hours (105 ℃) then, the UV/ozone of again ito glass being done 25 minutes is handled, and is sent to preparation organic membrane and metal electrode in the vacuum chamber.The device architecture of this experiment is: ITO/NPB:2%F2-HCNQ (60nm)/NPB (10nm)/Alq (60nm)/LiF (0.8nm)/Al (60nm) (device ten).Wherein, wherein ITO is the transparency electrode of square resistance 10-20 Ω, and NPB is N, N '-diphenyl-N, N '-(1-naphthyl) 4,4 '-benzidine; Alq is an oxine aluminium.The voltage that opens of this device is 2.5V; When brightness was 100cd/A, driving voltage was 3.6V; 20mA/cm
2The time, driving voltage is 4.7V, and current efficiency is 3.57cd/A, and power efficiency is 2.38lm/W.
This examples show save hole injection layer, F2-HCNQ is as dopant material, the electroluminescent device that NPB prepares as material of main part.With ito glass one after the other in cleaning agent and deionized water with ultrasonic waves for cleaning 30 minutes.Vacuumize 2 hours (105 ℃) then, the UV/ozone of again ito glass being done 25 minutes is handled, and is sent to preparation organic membrane and metal electrode in the vacuum chamber.The device architecture of this experiment is: ITO/NPB:2%F2-HCNQ (60nm)/NPB (10nm)/Alq (40nm)/BPhen:4%Cs2CO3 (20nm)/LiF (0.8nm)/Al (60nm) (device 11).Wherein, wherein ITO is the transparency electrode of square resistance 10-20 Ω, and NPB is N, N '-diphenyl-N, N '-(1-naphthyl) 4,4 '-benzidine; Alq is an oxine aluminium; BPhen is 4,7-diphenyl 1,10-phenanthroline.The voltage that opens of this device is 2.5V; When brightness was 100cd/A, driving voltage was 3.2V; 20mA/cm
2The time, driving voltage is 4.1V, and current efficiency is 3.92cd/A, and power efficiency is 2.95lm/W.
Embodiment 11
This examples show save hole injection layer, F2-HCNQ is as dopant material, NPB is as material of main part, and the electroluminescent device of preparation.With ito glass one after the other in cleaning agent and deionized water with ultrasonic waves for cleaning 30 minutes.Vacuumize 2 hours (105 ℃) then, the UV/ozone of again ito glass being done 25 minutes is handled, and is sent to preparation organic membrane and metal electrode in the vacuum chamber.The device architecture of this experiment is: ITO/NPB:2%F2-HCNQ (60nm)/NPB (10nm)/Alq (40nm)/Alq:4%Cs
2CO
3(20nm)/LiF (0.8nm)/Al (100nm) (device 12).Wherein, wherein ITO is the transparency electrode of square resistance 10-20 Ω, and NPB is N, N '-diphenyl-N, N '-(1-naphthyl) 4,4 '-benzidine; Alq is an oxine aluminium; BPhen is 4,7-diphenyl 1,10-phenanthroline.The voltage that opens of this device is 2.5V; When brightness was 100cd/A, driving voltage was 3.7V; 20mA/cm
2The time, driving voltage is 5.1V, and current efficiency is 3.82cd/A, and power efficiency is 2.36lm/W.
The performance of above-mentioned device is summed up:
Claims (8)
1. organic electroluminescence device, comprising the substrate layer that sets gradually from the bottom to top (101), anode (102), hole injection layer or hole transmission layer (103), luminescent layer (105), electron injecting layer or electron transfer layer (106) and negative electrode (107) is characterized in that hole injection layer or hole transmission layer (103) are the hole injection layer of doping or the hole transmission layer of doping.
2. organic electroluminescence device according to claim 1 is characterized in that being provided with resilient coating (104) above the hole transmission layer of hole injection layer that mixes or doping.
3. organic electroluminescence device according to claim 1 and 2, it is characterized in that being doped with in the hole transmission layer of the hole injection layer of described doping or doping a kind of contain that two fluorine replace 7,7,8,8-four cyano quinone bismethane derivative dopant material.
4. organic electroluminescence device according to claim 3 is characterized in that dopant material is the derivative of F2-HCNQ or F2-HCNQ.
5. organic electroluminescence device according to claim 1 and 2 is characterized in that the material of main part in the hole transmission layer of the hole injection layer of described doping or doping, and the energy level of the highest occupied molecular orbital of its electronics is between 4.9eV and 6.5eV.
6. organic electroluminescence device according to claim 5 is characterized in that described material of main part is 2-TNATA, NPB, VOPC, ZnPC, TDATA or TPD.
7. organic electroluminescence device according to claim 1 and 2 is characterized in that substrate layer (101) is the supporting layer of device (100); Anode (102) places on the substrate layer (101), is made by the higher metal of work function, metal oxide, carbon black, conducting polymer; Negative electrode (107) is to be made of the metal or metal alloy than low work function.
8. organic electroluminescence device according to claim 1 and 2 is characterized in that the hole injection layer that mixes or the thickness of hole transport layer of doping are 5-400nm.
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| CN 200720152011 CN201084751Y (en) | 2007-06-21 | 2007-06-21 | An organic electro-luminescent device |
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| CN 200720152011 CN201084751Y (en) | 2007-06-21 | 2007-06-21 | An organic electro-luminescent device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103081155A (en) * | 2011-02-16 | 2013-05-01 | 株式会社半导体能源研究所 | Light-emitting element |
| CN110456247A (en) * | 2019-07-29 | 2019-11-15 | 云谷（固安）科技有限公司 | Test device and its test method |
| WO2021237820A1 (en) * | 2020-05-27 | 2021-12-02 | 武汉华星光电半导体显示技术有限公司 | P-type organic semiconductor material, preparation method and display panel |
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2007
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103081155A (en) * | 2011-02-16 | 2013-05-01 | 株式会社半导体能源研究所 | Light-emitting element |
| CN103081155B (en) * | 2011-02-16 | 2016-08-03 | 株式会社半导体能源研究所 | Light-emitting component |
| US9604928B2 (en) | 2011-02-16 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| US10573829B2 (en) | 2011-02-16 | 2020-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| US10586934B2 (en) | 2011-02-16 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| US10593895B2 (en) | 2011-02-16 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| CN110456247A (en) * | 2019-07-29 | 2019-11-15 | 云谷（固安）科技有限公司 | Test device and its test method |
| CN110456247B (en) * | 2019-07-29 | 2021-08-13 | 云谷（固安）科技有限公司 | Test device and test method thereof |
| US11953537B2 (en) | 2019-07-29 | 2024-04-09 | Yungu (Gu'an) Technology Co., Ltd. | Test device and test method thereof |
| WO2021237820A1 (en) * | 2020-05-27 | 2021-12-02 | 武汉华星光电半导体显示技术有限公司 | P-type organic semiconductor material, preparation method and display panel |
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