CN201044436Y - Over-current self-locking bridge drive circuit - Google Patents
Over-current self-locking bridge drive circuit Download PDFInfo
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- CN201044436Y CN201044436Y CNU2007201204317U CN200720120431U CN201044436Y CN 201044436 Y CN201044436 Y CN 201044436Y CN U2007201204317 U CNU2007201204317 U CN U2007201204317U CN 200720120431 U CN200720120431 U CN 200720120431U CN 201044436 Y CN201044436 Y CN 201044436Y
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Abstract
The utility model discloses an over-current self-locking bridge type driving circuit, comprising a first MOS pipe (M1), a second MOS pipe (M2), a thyristor (S1), a sampling resistance R6 and an optical coupler (P1), wherein, a switch power source (VCC) is connected with a transmitting terminal light emitting diode of the optical coupler (P1); the cathode of the transmitting terminal light emitting diode of the optical coupler (P1) is connected with the anode of the thyristor (S1); a collector at a receiving terminal the optical coupler (P1) is connected with a base of a triode (Q1); an emitter at the receiving terminal the optical coupler (P1) is connected with a collector of a first triode (Q1). The utility model can detect the current between the sampling resistance R6 and a source electrode of the second MOS pipe M2. When over current appears in a circuit, the first MOS pipe (M1) and the second MOS pipe (M2) both cut off work to realize self-locking protection; therefore, the utility model can protect the MOS pipes well and realizes over-current self-locking protection function.
Description
[technical field]
The utility model relates to a kind of circuit, particularly a kind of overcurrent self-locking bridge drive circuit.
[background technology]
Fig. 1 is the schematic diagram that comprises a kind of bridge drive circuit of 2 metal-oxide-semiconductors of the prior art, the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 alternation.When the first signal source Vg1 is timing, first metal-oxide-semiconductor M1 work, this moment, secondary signal source Vg2 was for negative, and the second metal-oxide-semiconductor M2 does not work; When the first signal source Vg1 when negative, the first metal-oxide-semiconductor M1 does not work, this moment, secondary signal source Vg2 was for just, the second metal-oxide-semiconductor M2 works.
But this bridge drive circuit does not have corresponding protection circuit, and when over-current phenomenon avoidance occurring, the drive circuit metal-oxide-semiconductor just might be burnt out, and causes the circuit can't operate as normal, has reduced operating efficiency on the one hand, has increased the maintenance difficulties of system on the other hand yet.
[summary of the invention]
The technical problems to be solved in the utility model provides a kind of bridge drive circuit that has overcurrent self-lock protection function.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of overcurrent self-locking bridge drive circuit, comprise the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the first triode Q1 and the second triode Q2, the first signal source Vg1 is connected with the anode of isolating diode D1 and the base stage of the first triode Q1 respectively, the negative electrode of isolating diode D1 is connected with the grid of the first metal-oxide-semiconductor M1 and the emitter of the first triode Q1 respectively, and the source electrode of the collector electrode of the first triode Q1 and the first metal-oxide-semiconductor M1 meets the ground G1 of the first signal source Vg1 correspondence respectively;
Secondary signal source Vg2 is connected with the anode of isolating diode D2 and the base stage of the second triode Q2 respectively, the negative electrode of isolating diode D2 is connected with the grid of the second metal-oxide-semiconductor M2 and the emitter of the second triode Q2 respectively, the source electrode of the collector electrode of the second triode Q2 and the second metal-oxide-semiconductor M2 meets the ground G2 of secondary signal source Vg2 correspondence respectively, and the drain electrode of the second metal-oxide-semiconductor M2 is connected with the source electrode of the first metal-oxide-semiconductor M1;
Also comprise sampling resistor R6, thyristor S1 and optocoupler P1, sampling resistor R6 is connected between the ground G2 of the drain electrode of the second metal-oxide-semiconductor M2 and secondary signal source Vg2 correspondence, the control utmost point of thyristor S1 is connected with the drain electrode of the second metal-oxide-semiconductor M2, the negative electrode of thyristor S1 meets the ground G2 of secondary signal source Vg2 correspondence, the anode of thyristor S1 is connected with the negative electrode of isolating diode D3, and the anode of isolating diode D3 is connected with the base stage of the second triode Q2;
Switching Power Supply VCC is connected with the anode of optocoupler P1 transmitting terminal light-emitting diode, the negative electrode of optocoupler P1 transmitting terminal light-emitting diode is connected with the anode of thyristor S1, the collector electrode of optocoupler P1 receiving terminal is connected with the base stage of triode Q1, and the emitter of optocoupler P1 receiving terminal is connected with the collector electrode of the first triode Q1.
Further, described overcurrent self-locking bridge drive circuit also comprises current-limiting resistance R5, and the one end is connected with the source electrode of the second metal-oxide-semiconductor M2, and the other end is connected with the control utmost point of thyristor S1.
Further, described overcurrent self-locking bridge drive circuit also comprises filter capacitor C1, and filter capacitor C1 is connected between the ground G2 of the control utmost point of thyristor S1 and secondary signal source Vg2 correspondence.
Further, described overcurrent self-locking bridge drive circuit also comprises current-limiting resistance RO, and it is connected between the anode of Switching Power Supply VCC and optocoupler P1 transmitting terminal light-emitting diode.
Further, described overcurrent self-locking bridge drive circuit also comprises current-limiting resistance R1, and it is connected between the anode of the first signal source Vg1 and isolating diode D1.
Further, described overcurrent self-locking bridge drive circuit also comprises current-limiting resistance R2, and it is connected between the base stage of the first signal source Vg1 and the first triode Q1.
Further, described overcurrent self-locking bridge drive circuit also comprises current-limiting resistance R3, and it is connected between the anode of secondary signal source Vg2 and isolating diode D2.
Further, described overcurrent self-locking bridge drive circuit also comprises current-limiting resistance R4, and it is connected between the base stage of the secondary signal source Vg2 and the second triode Q2.
Overcurrent self-locking bridge drive circuit of the present utility model, can detect the electric current between the source electrode of the sampling resistor R6 and the second metal-oxide-semiconductor M2, when overcurrent appears in circuit, thyristor S1 conducting, the second triode Q2 conducting, the gate clamped of such second metal-oxide-semiconductor M2 is in low level, and second metal-oxide-semiconductor is realized self-lock protection; And optocoupler P1 conducting this moment, the first triode Q1 conducting, the grid of the first metal-oxide-semiconductor M1 also is clamped at low level, and the first metal-oxide-semiconductor M1 also realizes self-lock protection; So the utility model can well be protected metal-oxide-semiconductor, realize the overcurrent self-lock protection function of circuit.
[description of drawings]
Fig. 1 is the circuit theory diagrams of bridge drive circuit in the prior art.
Fig. 2 is the circuit theory diagrams of the utility model overcurrent self-locking bridge drive circuit.
[embodiment]
With specific embodiment the utility model is done to set forth further with reference to the accompanying drawings below.
The utility model has the self-lock protection circuit, Fig. 2 is the circuit theory diagrams of overcurrent self-locking bridge drive circuit of the present utility model, this overcurrent self-locking bridge drive circuit, comprise the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the first triode Q1, the second triode Q2, sampling resistor R6, thyristor S1 and optocoupler P1, the first signal source Vg1 is connected to the anode of isolating diode D1 by current-limiting resistance R1, the first signal source Vg1 also is connected to the base stage of the first triode Q1 by current-limiting resistance R2, the negative electrode of isolating diode D1 is connected with the grid of the first metal-oxide-semiconductor M1 and the emitter of the first triode Q1 respectively, and the source electrode of the collector electrode of the first triode Q1 and the first metal-oxide-semiconductor M1 meets the ground G1 of the first signal source Vg1 correspondence respectively;
Secondary signal source Vg2 is connected to the anode of isolating diode D2 by current-limiting resistance R3, secondary signal source Vg2 also is connected to the base stage of the second triode Q2 by current-limiting resistance R4, the negative electrode of isolating diode D2 is connected with the grid of the second metal-oxide-semiconductor M2 and the emitter of the second triode Q2 respectively, the collector electrode of the second triode Q2 meets the ground G2 of secondary signal source Vg2 correspondence, the drain electrode of the second metal-oxide-semiconductor M2 is connected with the source electrode of the first metal-oxide-semiconductor M1, and the source electrode of the second metal-oxide-semiconductor M2 meets the ground G2 of secondary signal source Vg2 correspondence by sampling resistor R6;
The control utmost point of thyristor S1 is connected with the drain electrode of the second metal-oxide-semiconductor M2 by current-limiting resistance R5, the negative electrode of thyristor S1 meets the ground G2 of secondary signal source Vg2, filter capacitor C1 is connected between the ground G2 of the control utmost point of thyristor S1 and secondary signal source Vg2, the anode of thyristor S1 is connected with the negative electrode of isolating diode D3, and the anode of isolating diode D3 is connected with the base stage of the second triode Q2;
Switching Power Supply VCC is connected with the anode of optocoupler P1 transmitting terminal light-emitting diode by current-limiting resistance R0, the negative electrode of optocoupler P1 transmitting terminal light-emitting diode is connected with the anode of thyristor S1, the collector electrode of optocoupler P1 receiving terminal is connected with the base stage of the first triode Q1, and the emitter of optocoupler P1 receiving terminal is connected with the collector electrode of the first triode Q1.
Operation principle of the present utility model is: two metal-oxide-semiconductor alternations, when the first signal source Vg1 is timing (greater than 3V), it reaches the operating voltage of the first metal-oxide-semiconductor M1, first metal-oxide-semiconductor M1 work, the first triode Q1 ends, and this moment, secondary signal source Vg2 was for negative, and the second metal-oxide-semiconductor M2 does not just work, the second triode Q2 conducting, this moment, the second metal-oxide-semiconductor M2 was by the second triode Q2 and current-limiting resistance R4 discharge; When the first signal source Vg1 when negative, the first metal-oxide-semiconductor M1 does not work, the first triode Q1 conducting, this moment, the first metal-oxide-semiconductor M1 will be by the first triode Q1 and current-limiting resistance R2 discharge, but this moment, secondary signal source Vg2 was for just, and the second metal-oxide-semiconductor M2 works, and the second triode Q2 ends.
When overcurrent appears in circuit, thyristor S1 conducting, the second also conducting of triode Q2 this moment, the current potential of the grid of the second metal-oxide-semiconductor M2 just is clamped to low level, make its current potential not reach the conducting voltage of second metal-oxide-semiconductor, this moment, second metal-oxide-semiconductor just by not working, was realized self-lock protection; Switching Power Supply VCC meets the ground G2 of secondary signal source Vg2 correspondence successively by current-limiting resistance R0, optocoupler P1 and thyristor S1 simultaneously; optocoupler P1 conducting; the first also conducting of triode M1 this moment; the grid potential of such first metal-oxide-semiconductor also is clamped to low level; the first metal-oxide-semiconductor M1 just by work, has also realized self-lock protection.When restarting this overcurrent self-locking bridge drive circuit if desired, just can realize resetting of circuit by Switching Power Supply VCC.
In sum, overcurrent self-locking bridge drive circuit of the present utility model, can detect the electric current between the source electrode of the sampling resistor R6 and the second metal-oxide-semiconductor M2, when overcurrent appears in circuit, thyristor S1 conducting, the second triode Q2 conducting, the gate clamped of such second metal-oxide-semiconductor M2 are in low level, and second metal-oxide-semiconductor is realized self-lock protection; And optocoupler P1 conducting this moment, the first triode Q1 conducting, the grid of the first metal-oxide-semiconductor M1 also is clamped at low level, and the first metal-oxide-semiconductor M1 also realizes self-lock protection; So the utility model can well be protected metal-oxide-semiconductor, realize the overcurrent self-lock protection function of circuit.
Claims (8)
1. overcurrent self-locking bridge drive circuit, comprise first metal-oxide-semiconductor (M1), second metal-oxide-semiconductor (M2), first triode (Q1) and second triode (Q2), first signal source (Vg1) is connected with the anode of isolating diode D1 and the base stage of first triode (Q1) respectively, the negative electrode of isolating diode D1 is connected with the grid of first metal-oxide-semiconductor (M1) and the emitter of first triode (Q1) respectively, and the source electrode of the collector electrode of first triode (Q1) and first metal-oxide-semiconductor (M1) connects the corresponding ground (G1) of first signal source (Vg1) respectively;
Secondary signal source (Vg2) is connected with the anode of isolating diode D2 and the base stage of second triode (Q2) respectively, the negative electrode of isolating diode D2 is connected with the grid of second metal-oxide-semiconductor (M2) and the emitter of second triode (Q2) respectively, the source electrode of the collector electrode of second triode (Q2) and second metal-oxide-semiconductor (M2) connects corresponding ground (G2), secondary signal source (Vg2) respectively, and the drain electrode of second metal-oxide-semiconductor (M2) is connected with the source electrode of first metal-oxide-semiconductor (M1);
It is characterized in that: also comprise sampling resistor R6, thyristor (S1) and optocoupler (P1), sampling resistor R6 is connected between the corresponding ground (G2) of the drain electrode of second metal-oxide-semiconductor (M2) and secondary signal source (Vg2), the control utmost point of thyristor (S1) is connected with the drain electrode of second metal-oxide-semiconductor (M2), the negative electrode of thyristor (S1) connects corresponding ground (G2), secondary signal source (Vg2), the anode of thyristor (S1) is connected with the negative electrode of isolating diode D3, and the anode of isolating diode D3 is connected with the base stage of second triode (Q2);
Switching Power Supply (VCC) is connected with optocoupler (P1) transmitting terminal light-emitting diode, the negative electrode of optocoupler (P1) transmitting terminal light-emitting diode is connected with the anode of thyristor (S1), the collector electrode of optocoupler (P1) receiving terminal is connected with the base stage of triode (Q1), and the emitter of optocoupler (P1) receiving terminal is connected with the collector electrode of first triode (Q1).
2. overcurrent self-locking bridge drive circuit according to claim 1 is characterized in that: also comprise current-limiting resistance R5, the one end is connected with the source electrode of second metal-oxide-semiconductor (M2), and the other end is connected with the control utmost point of thyristor (S1).
3. overcurrent self-locking bridge drive circuit according to claim 2 is characterized in that: also comprise filter capacitor (C1), filter capacitor (C1) is connected between the corresponding ground (G2) of the control utmost point of thyristor (S1) and secondary signal source (Vg2).
4. overcurrent self-locking bridge drive circuit according to claim 3 is characterized in that: also comprise current-limiting resistance R0, it is connected between the anode of Switching Power Supply (VCC) and optocoupler (P1) transmitting terminal light-emitting diode.
5. overcurrent self-locking bridge drive circuit according to claim 4 is characterized in that: also comprise current-limiting resistance R1, it is connected between the anode of first signal source (Vg1) and isolating diode D1.
6. overcurrent self-locking bridge drive circuit according to claim 5 is characterized in that: also comprise current-limiting resistance R2, it is connected between the base stage of first signal source (Vg1) and first triode (Q1).
7. overcurrent self-locking bridge drive circuit according to claim 6 is characterized in that: also comprise current-limiting resistance R3, it is connected between the anode of secondary signal source (Vg2) and isolating diode D2.
8. overcurrent self-locking bridge drive circuit according to claim 7 is characterized in that: also comprise current-limiting resistance R4, it is connected between the base stage of secondary signal source (Vg2) and second triode (Q2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201204317U CN201044436Y (en) | 2007-05-30 | 2007-05-30 | Over-current self-locking bridge drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201204317U CN201044436Y (en) | 2007-05-30 | 2007-05-30 | Over-current self-locking bridge drive circuit |
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| Publication Number | Publication Date |
|---|---|
| CN201044436Y true CN201044436Y (en) | 2008-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201204317U Expired - Lifetime CN201044436Y (en) | 2007-05-30 | 2007-05-30 | Over-current self-locking bridge drive circuit |
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| Country | Link |
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| CN (1) | CN201044436Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399533B (en) * | 2008-10-17 | 2010-04-21 | 深圳和而泰智能控制股份有限公司 | Multipath output circuit |
| CN104080226A (en) * | 2013-03-26 | 2014-10-01 | 无锡华润华晶微电子有限公司 | Circuit controlling on-off of triode according to sampling current |
| CN105306030A (en) * | 2015-12-02 | 2016-02-03 | 上海航空电器有限公司 | Main power circuit for alternating current solid state power controller |
-
2007
- 2007-05-30 CN CNU2007201204317U patent/CN201044436Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399533B (en) * | 2008-10-17 | 2010-04-21 | 深圳和而泰智能控制股份有限公司 | Multipath output circuit |
| CN104080226A (en) * | 2013-03-26 | 2014-10-01 | 无锡华润华晶微电子有限公司 | Circuit controlling on-off of triode according to sampling current |
| CN104080226B (en) * | 2013-03-26 | 2016-04-27 | 无锡华润华晶微电子有限公司 | A kind of circuit controlling triode switch according to sample rate current |
| CN105306030A (en) * | 2015-12-02 | 2016-02-03 | 上海航空电器有限公司 | Main power circuit for alternating current solid state power controller |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN MEGMEET ELECTRICAL CO., LTD. Free format text: FORMER NAME: SHENZHEN MEGMEET ELECTRICAL TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 1804, room 6006, Huafeng building, No. 518034 Shennan Road, Guangdong, Shenzhen Patentee after: Shenzhen Megmeet Electrical Co., Ltd. Address before: 1804, room 6006, Huafeng building, No. 518034 Shennan Road, Guangdong, Shenzhen Patentee before: Shenzhen Megmeet Electrical Technology Co., Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 518057, Shenzhen science and technology zone, Guangdong, Nanshan District Province, 13 North Road, Thunis Road, 5,A;B;C501-C503;D;E Patentee after: Shenzhen Megmeet Electrical Co., Ltd. Address before: 1804, room 6006, Huafeng building, No. 518034 Shennan Road, Guangdong, Shenzhen Patentee before: Shenzhen Megmeet Electrical Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20080402 |
|
| CX01 | Expiry of patent term |