CN201031145Y - Device for producing polycrystalline silicon with plasma method - Google Patents
Device for producing polycrystalline silicon with plasma method Download PDFInfo
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- CN201031145Y CN201031145Y CNU2007201035018U CN200720103501U CN201031145Y CN 201031145 Y CN201031145 Y CN 201031145Y CN U2007201035018 U CNU2007201035018 U CN U2007201035018U CN 200720103501 U CN200720103501 U CN 200720103501U CN 201031145 Y CN201031145 Y CN 201031145Y
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Abstract
A polysilicon producing device of the utility model employing the plasma method relates to the filed of device for producing semi-conductor material. Currently the essential method is to crack the trichlorosilane into the hydrochloric acid, the chlorine gas and the polysilicon which is expensive in device cost and complex in structure. The utility model employs silane or halosilane as raw materials to be heated with the hydrogen till the plasma state, and the polysilicon is created during the cooling process. The essential device comprises a plasma transforming room for plasma reaction, an exhaust gas separating tower for separating exhaust gas from the plasma transforming room, and an exhaust gas store tank for storing gas by-products. The device employed is low in construction cost, wherein the manufacturing expense is only one fifth compared with the prior art, and is high in producing efficiency, which meets the requirements of production line with all kinds of scales. When in large-scale production, a plurality of devices can be connected in parallel to manufacture, which has the beneficial effects of energy saving, convenient operation and high reliability.
Description
Technical field
The utility model relates to the field that produces the semiconductor material device, especially produces the device of polysilicon.
Background technology
Separate the preparation polysilicon from ore, passing through crystal pulling technique again can the manufacture order crystal silicon, and purposes is very extensive, has become big industry at world wide at present.
The main method of the polysilicon of countries in the world production at present is ' Siemens Method ', is about to trichlorosilane and is cracked into hydrochloric acid, chlorine and polysilicon in electrothermal oven.The shortcoming of this method is: 1, and the price height of synthesizing trichlorosilane, purifying technique complexity.2, the efficient of thermo-cracking is low, and the part trichlorosilane is converted to silicon tetrachloride in cracking process, and trichlorosilane is converted to the ratio of polysilicon less than 50%, and every kg trichlorosilane can only obtain the following monomer silicon of 100g.Silicon tetrachloride is through after separating, and synthesizing trichlorosilane is as starting material again, such working cycle power consumption power consumption, inefficiency.3, the exhaust gas component complexity that cracking process produces mainly contains silicon tetrachloride, hydrogenchloride, chlorine etc.These exhaust gas components have intensive corrodibility to equipment, separate the complex process of tail gas, and facility investment is high especially.So, the holding at high price of polysilicon.
Present pyrolysis method complex process, wherein great amount of investment is used for separating treatment tail gas, otherwise materials such as the silicon tetrachloride in the tail gas, chlorine, hydrogenchloride will pollute the environment.Factory's operation polysilicon of building smallest size needs several hundred million Renminbi, and can not utilizing on a small scale, the investment and production polysilicon obtains profit.
Summary of the invention
In view of the foregoing the utility model is to the plasma producing method of the brand-new scheme polysilicon of raw materials for production and production technique design, carried out equipment design, it is simple that the purpose of this utility model provides a kind of equipment, invests the low production equipment that is suitable for the polysilicon plasma producing method.
The plasma producing method of polysilicon is 1450 for feeding temperature after preheating as the silane of raw material or halogenated silanes gas and hydrogen---1550 ℃ plasma switch room, mixture is heated to isoionic state in moment, in process of cooling, generate liquid or the fine powder and the gaseous by-product of silicon monomer, the liquid silicon monomer flows out through the liquid-state silicon spout, the silicon monomer fine powder enters the tail gas knockout tower with gaseous by-product to be separated, and isolated gas by-product enters the tail gas hold-up vessel.
Being used for above-mentioned plasma method, to produce the technical scheme of equipment of polysilicon as follows: mainly have the plasma switch room with raw material silane or halogenated silanes plasma, will carry out isolating tail gas knockout tower and store the tail gas hold-up vessel of the gaseous by-product of separating from the tail gas knockout tower from plasma switch room tail gas discharged.Has the refractory ceramics pipe in the described plasma switch room, on the refractory ceramics pipe, high-temperature heating equipment is housed, end at high-temperature ceramic has a plurality of feed(raw material)inlets, the other end of high-temperature ceramic inserts in the insulation crucible, heating tungsten rod is housed in the insulation crucible wall, on insulation crucible inwall, has gas flow guiding spiricle, have the liquid-state silicon spout of insulation in the bottom of insulation crucible, the insulation crucible is installed in the switch room shell, on the shell top tail gas relief outlet is housed.The described high-temperature heating equipment that is contained on the high-temperature ceramic can be hf electric arc well heater or electric tube heater or fuel burning heater.Described tail gas knockout tower has the separate chamber, in the bottom, separate chamber gaseous by-product is housed enters pipe, enter the pipe outer wall water cooling heat exchanger is housed, in the bottom, separate chamber packaging vessel is housed, on top, separate chamber filter membranous layer is housed, filter membrane adopts glass fibre or polyvinyl fluoride fibre to make, and the filter membrane shake is housed above filter membranous layer is full of pump.Described tail gas hold-up vessel has isolating upper tank body and lower tank two portions, sidewall has the wall of opening around lower tank, sealing liquid is housed in wall, the upper tank body lower sidewall is inserted in the wall, in the lower tank bottom inlet pipe, raffinate relief outlet and escape pipe are housed, escape pipe stretches in the tank body, and its top is in gas top.
Described plasma switch room, also include auxiliary equipment: power supply, the gas heating feeding mechanism of hydrogen, silicomethane, the earthenware duct that utilizes high-frequency electric field generation flame passes, the electric heating thermal insulation crucible of collecting liquid monomer silicon, switch room wall temperature detection system, cooling water circulation system.
Utilize silicane as follows as the working process of the plasma switch room of raw materials for production:
Hydrogen is preheating to 1450 ℃ from hydrogen inlet injection vitrified pipe, substep injects in vitrified pipe and is preheating to 300 ℃ silicomethane gases then, re-injects the silicomethane gases of preheating until send silicon monomer (liquid state) and hydrogen from the rear of vitrified pipe through after the ratio-frequency heating.The vitrified pipe structure of confining plasma flame must guarantee that silane is heated to more than 1410 ℃ at once after sending into vitrified pipe, could prevent the locking system fouling.
The frequency of high frequency electric source is between 10 million-60 million.
Gas supply system has silicomethane supply line, rare gas element supply line and hydrogen supply pipeline.Silicomethane supply line and hydrogen supply pipeline were heated to preset value before entering the switch room pipeline; Wherein silane must not heat above 300 ℃, avoids silane moiety to decompose blocking pipe.Hydrogen can be heated to about 1500 ℃, makes things convenient for the high-frequency electric field conduction to produce electric arc.Type of heating can adopt the electrothermal tube heating, also can adopt the mode of fuel combustion heating delivering gas pipeline to heat.
Adopt the purpose of such feeding to be: to allow silane be heated to more than 1410 ℃ from 300 ℃, avoid silane that the part decomposition takes place in heat-processed, generate sticking material blocking pipe in the extremely short time.And make monomer silicon keep liquid form in the insulation crucible, to be collected.
The water-cooled constant temperature system is arranged at the outermost layer of switch room, as protection operator's device, also as avoiding internal layer superheated regulating measure.
The outer high frequency heating coil of vitrified pipe adopts refractory metal material such as tungsten line to constitute, and with the refractory materials sealing, prevents air contact coil.
By the thermal source of heat exchange as initial pre-hot hydrogen, silane, hydrogen continues by calrod or Fuel Furnace heating after being heated by tail gas from the effusive tail gas of switch room.
If need per hour to produce the above silicon monomer of 300kg on the engineering, can adopt a plurality of switch room parallel runnings, to realize carrying out continuous crystal-pulling after liquid-state silicon flows into crucible, produce large size single crystal silicon.
Described tail gas knockout tower, the method that adopts static natural sedimentation and filtration to combine is carried out.Monomer silicon mainly becomes liquid in the plasma switch room is collected by crucible, and few part becomes fine powder and enters tail gas.The agent structure of knockout tower is that a large-scale enclosed space is the separate chamber, and the spatial size is by the decision of the gas volume that enters: the knockout tower that enters of 100 cubic meter of gas per hour needs to build the separate chamber's settlement space more than 30 cubic metres.The pipeline that connects plasma switch room and knockout tower is the water cooling heat exchanger pipeline, guarantees that the gas temperature that enters the separate chamber is lower than 60 ℃.Entered by the polysilicon powder of plasma switch room and the hydrogen bottom from the separate chamber, temperature descends and air flow slows, in the doline collector of most of polysilicon powder natural subsidence at the bottom of the separate chamber, enters packaging vessel.The small part powder can rise in company with hydrogen, is attached to the filter membrane on top, separate chamber.Every interval certain hour starts the concussion pump that is connected in filter membrane, and the polysilicon powder that will adhere to is shaken off from filtering membrane and knockout tower wall, enters collection funnel automatically, and landing enters packaging vessel again.
At the polysilicon powder that the tail gas knockout tower is collected, particle diameter is 20-150nm, and is especially big because of the unit weight surface-area though the fusion crystal pulling is favourable once more to industrial processes, is subjected to the erosion of water vapour, oxygen easily.Therefore when packing, should before reworking, not open packing together with hydrogen packing or vacuum-packed.
Described tail gas hold-up vessel is according to the technology difference, require different mining with different materials to the purposes of main byproduct hydrogen.To hydrogen is that multiduty production line generally adopts the composited steel and plastic decking material.
The utility model plasma method is produced in the process of polysilicon, and the hydrogen atom in the silicomethane molecule becomes hydrogen and remains in the tail gas in switching process.Every production 1kg polysilicon just produces 1.6 cubic metres hydrogen.Produce 1 ton polysilicon enterprise every day, with the hydrogen that produces 1600 cubic metres.If this part hydrogen is used for gas turbine power generation, perhaps be used for resident family as gas for domestic use, can not need to separate direct utilization, this moment, described tail gas hold-up vessel can copy general coal gas hold-up vessel to build, and used gas unit through being pressed and delivered to.
In the plasma switch room, need utilize hydrogen partial as producing isoionic raw material, can not need special purification separation process from the loopback of tail gas hold-up vessel.
The fuel of battery if hydrogen acts as a fuel perhaps as the higher industrial chemicals of other purity, then after the tail gas hold-up vessel goes out the silicomethane of few part that may exist through condensation separation, is isolated liquid hydrogen as product through compression condensation again.
If adopt halogenated silanes as raw materials for production, the trouble of bringing on producing is the composition more complicated of tail gas, and the major ingredient of tail gas is a hydrogenchloride, to the seriously corroded of tail gas separation system, needs protection.Advantage is: because halogenated silanes (as chlorosilanes such as trichlorosilane, silicon tetrachlorides) gas can not produce the part resolvent in heating and decomposition course, except that silicon monomer, do not produce solid form material or viscous substance, so the structure of the vitrified pipe of switch room, constraint plasma flame is simple relatively.The mixture of silicon tetrachloride and hydrogen does not decompose at 1200 ℃, so silicon tetrachloride gas can be preheating to more than 1200 ℃, injects the plasma switch room, makes to add the needed power consumption reduction of thermogenesis plasma body.
The utility model and prior art (trichlorosilane thermal-cracking method) relatively have following advantage and effect:
Fabrication cost has only the production line fabrication cost 1/10th of the equal polysilicon output of trichlorosilane thermal-cracking method;
Equipment of the present utility model is applicable to the production of polysilicon of various scales of investment, also can carry out small-scale production, as carries out fairly large production, can produce after the multiple devices parallel connection;
Has energy-conservation, easy to operate, safe beneficial effect.
Description of drawings
Fig. 1 is the Production Flow Chart synoptic diagram that the plasma of utility model polysilicon is produced
Fig. 2 is applicable to the plasma switch room structural representation of silicomethane conversion
Fig. 3 utilizes silicon tetrachloride (or other halogenated silanes) to produce the plasma switch room structural representation of polysilicon
Fig. 4 is a tail gas knockout tower structural representation
Fig. 5 is a tail gas hold-up vessel structural representation
Fig. 6 utilizes silicon tetrachloride (or other halogenated silanes) to produce the gas ingredients separation system synoptic diagram of polysilicon
The building block title of each sequence number correspondence is as follows among the figure:
1---high frequency heating coil, 2---hydrogen inlet, 3---the silane inlet, 4---silane or hydrogen inlet, 5---the spiricle groove, 6---the insulation crucible, 7---heating is used the tungsten rod, 8---liquid-state silicon spout, 9---the refractory ceramics pipe, 10---the tail gas relief outlet, 11---high frequency heating coil, 12---hydrogen and halogenated silanes inlet, 13---the tail gas relief outlet, 14---process furnace, 15---the spiricle groove, 16---the insulation crucible, 17---the halogenated silanes inlet, 18---heating tungsten rod, 19---the liquid-state silicon spout, 20---hydrogen inlet, 21---the refractory ceramics pipe, 22---the gaseous by-product inlet, 23---filter membrane concussion pump, 24---filter membranous layer, 25---the separate chamber, 26---separate chamber's outer wall, 27---gaseous by-product, 28---packaging vessel, 29---sealing liquid, 30---upper tank body, 31---lower tank, 32---inlet pipe, 33---the raffinate relief outlet, 34---escape pipe.
Embodiment
Now in conjunction with the accompanying drawings technical scheme of the present invention is described further.
Embodiment 1:
It is silicomethane that the polysilicon plasma is produced used raw material, per hour changes the silicomethane of 120kg, can obtain 100kg silicon monomer (polysilicon), and line configuration is with accompanying drawing 1,2, and at rear a capacity being arranged is 500 cubic metres water seal enclosed tail gas hold-up vessel.
The silicomethane that raw material adopts liquid distillate to purify wherein contains a spot of silicon ethane, and non-silane contents is lower than 10
-6The ratio of raw material consumption is a silicomethane: hydrogen=more than 3: 1 or 3: 1, the main purpose that adds hydrogen is an intake, guarantees that the gas outlet temperature is more than 1400 ℃, and hydrogen does not participate in reaction.Raw material is preheated to 300 ℃ with the oil immersion pipeline before sending into switch room.
Production system starts: the production line for after newly-started or the maintenance, be full of system with nitrogen earlier, and the oxygen that may exist in the system is driven out of.With the process of the hydrogen in gas-holder drying installation (oil sealing if gas-holder is attached most importance to, need through fiber filter, remove the mist of oil that may bring into) inlet mouth and the porous high frequency heating coil switch room injected system of back by exciting high frequency heating coil, discharge intrasystem nitrogen.After treating that hydrogen is full of switch room, tail gas knockout tower, start the high frequency heating coil water-cooling system, adjust hydrogen, open heating system, start the high frequency heating coil power supply.Adjust hydrogen flowing quantity to 20 cubic metre/hour.Discharge tube successfully will be preheated to 400 ℃ hydrogen energising formation electric arc, and the switch room wall temperature raises gradually, and when arriving 1450 ℃, start-up course is finished, and open the outer water-cooling system of conversion locular wall and keep 1450-1550 ℃ of working temperature; Water-cooling system before the unlatching knockout tower is kept the gas temperature that enters knockout tower and is lower than 60 ℃.
Production process: open silane admission port silane gas valve bottom, adjust to per hour 20 cubic metres; Open second pair of silane gas valve, adjust to per hour 20 cubic metres; Progressively open the silane gas valve on from descending, bulk flow is to per hour 80 cubic metres, and excite high frequency heating coil total current intensity to be about 3600A this moment, the about 950kw of the total power consumption of switch room.
Crucible in the plasma switch room is the refractory ceramics sintering, is assembled into, and electric heating tungsten rod is installed in the crucible.The spiral groove that has the liquid-state silicon spout in crucible inside and make things convenient for the tail gas rotation to rise.When tail gas rose, liquid-state silicon wherein flowed down attached to crucible easily.Switch room is outward the multi-layer heat preserving structure except observation window.Inwall is with titanium pipe or the stainless steel tube composition that closely spirals, and flowing in the pipe needs the hydrogen of preheating.Being thermal insulation layer then, is the high-pressure cooling water pipe in the outside of thermal insulation layer, and the closed frame tube circulating distilled water connects external water cooling heat exchanger.The skin of high-pressure cooling water pipe is the spun-glass insulation layer.After heat release cooling balance, regulate the flow velocity of recirculated cooling water, keep inner wall temperature.The flow velocity of water coolant is controlled the high voltage direct current motor automatically by the information of the temperature sensor that is embedded in switch room and is finished.
The gas, the solid mixture that enter the separate chamber after switch room flows out are cooled in course of conveying.Water composite cooling pipe is cooled to gas temperature below 60 ℃, so that the precipitation of monomer silicon.The separate chamber adopts stainless steel integrated structure, convenient concussion pump work.The discharge port of lower end, separate chamber is installed airtight large bore valves, when the polysilicon powder deposition when a certain amount of, open airtight valve, open the concussion pump, allow the polysilicon powder shake off to packing bag that exit seal is connected in.Simultaneously, the polysilicon powder that also will be deposited on the filtering membrane lower surface is shaken off.
Packing bag is bled the packing stock.
The hydrogen that flows out the separate chamber is compressed to gas-holder by one group of different variable frequency pump extraction of speed.Variable frequency pump is by two groups of inside and outside defeated next information Control of air pressure probe of separate chamber, and the air pressure in the accurate control separate chamber is higher than extraneous 0.1-0.5KPa, keeps the normal barometric pressure of system, also just can keep the normal operating conditions of system.
Embodiment 2:
At present, the enterprise that produces silicon tetrachloride and other halogenated silanes such as trichlorosilane both at home and abroad is quite a lot of, and therefore, utilizing silicon tetrachloride and other halogenated silanes to produce polysilicon also is that a kind of raw material is obtained easily, spends less capital project.
Silicon tetrachloride and other halogenated silanes can utilize the utility model directly to be converted to polysilicon.Method is that hydrogen and silicon tetrachloride or haloalkane are heated respectively, sends into switch room and utilize high frequency discharge to produce plasma after the switch room mouth mixes, and molecular recombination generates silicon monomer and hydrogenchloride in process of cooling.Producing polysilicon with silicon tetrachloride below is embodiment, and production process and equipment are described.
As shown in Figure 3 the plasma switch room among the embodiment 1 is reequiped 2 points: the inlet in the first switch room is reduced to two, respectively as the hydrogen inlet and the silicon tetrachloride inlet that is heated to 1100 ℃ that are heated to 1450 ℃.Mix before entering switch room.Being heated to plasma body at switch room by radio-frequency coil then forms.
Used polysilicon plasma production equipment can obtain 25kg silicon monomer (polysilicon) liquid for per hour changing the silicon tetrachloride of 170kg.The molecule number ratio control of hydrogen and silicon tetrachloride is about 5: 1, as making raw material with trichlorosilane, hydrogen: trichlorosilane=4: 1, purpose are to make not produce chlorine in the tail gas.
The silicon tetrachloride that raw material adopts liquid distillate to purify, non-silane foreign matter content is lower than 10
-6
System starts: be full of switch room and tail gas system of separation columns with nitrogen earlier, with the process of the hydrogen in gas-holder drying installation (oil sealing if gas-holder is attached most importance to, need through fiber filter, remove the mist of oil that may bring into) be heated to 1450 ℃, inject switch room and tail gas system of separation columns, discharge intrasystem nitrogen.Start high frequency heating coil and produce hydrogen plasma, restart the calrod in the crucible, crucible is warmed up to 1450 ℃.After treating that hydrogen is full of switch room, tail gas knockout tower, start silicon tetrachloride gas, mix, inject switch room with the hydrogen of heating through being heated to 1100-1200 ℃.Progressively adjust hydrogen flowing quantity to 70 cubic metre/hour, the electric arc in the synchronization control heating coil current strength maintenance switch room.Progressively adjust silicon tetrachloride gas flow to 23 cubic metre; Start-up course is finished.Open conversion locular wall (the titanium plate is made) water-cooling system and keep inwall 800 ℃ of working temperatures; Open water-cooling system before the tail gas knockout tower keep enter knockout tower gas temperature between 50-80 ℃.
The gas-solid mixture that enters the separate chamber after switch room flows out is cooled in course of conveying.Water composite cooling pipe is cooled to gas temperature between 0-20 ℃, so that the silicon tetrachloride condensation that does not react completely is collected, is transmitted back between the raw materials for production storage car.Gas continues transported to the separate chamber.
The polysilicon powder is deposited to funnel automatically in the separate chamber, and wrapping process is with embodiment 1.Attention prevents hydrogenchloride leakage the causing work accident in the tail gas.Packing bag is bled, fill then, vacuumize again, the packing stock with rare gas element.
The tail gas that flows out the separate chamber is compressed to gas-holder by one group of different variable frequency pump extraction of speed.Variable frequency pump is by two groups of inside and outside defeated next information Control of air pressure probe of separate chamber, and the air pressure in the accurate control separate chamber is higher than extraneous 0.1-0.5KPa, keeps the normal operating conditions of system.
Gas-holder adopts the heavy oil sealing.
Major ingredient is hydrogenchloride and hydrogen in the tail gas.The condensation point that utilizes hydrogenchloride is than hydrogen height, and the present invention adopts the liquid nitrogen freezing separating hydrogen chloride.The isolating hydrogenchloride of this method is not moisture, can send back to the production line utilization of synthetic silicon tetrachloride.If adopt the buck elution method, can be separated to hydrochloric acid and hydrogen, determine according to practical situation.
The device that utilizes condensation method to reclaim hydrogenchloride and hydrogen is seen accompanying drawing 6, and the low-temperature receiver of system adopts liquid nitrogen.
Hydrogen below the waste gas utilization in the gas-holder-90 ℃ carries out the heat exchange precooling, the tail gas of room temperature is cooled to about-30 ℃; And then utilize the volatilization of liquid hydrogenchloride, tail gas can be cooled to-75 ℃.In the end hydrogenchloride is cooled to-95 ℃ with liquid nitrogen, this moment, hydrogen chloride condensed became liquid separation.Only contain hydrogen in the tail gas, send the switch room utilization later on back to through heat exchange.The heat exchange of liquid hydrogenchloride process becomes the gas about-30 ℃ later on, sends the production line utilization of raw materials for production silicon tetrachloride back to through overdraft.
Utilize trichlorosilane to produce polysilicon as the plasma method of raw material, device is with embodiment 2, and the preheating temperature of trichlorosilane is lowered to 750 ℃, and the ratio of hydrogen and trichlorosilane adopted 2.5: 1.
With regard to the plasma transformation approach, utilize the silicon tetrachloride conversion, need to consume a large amount of hydrogen, liquid nitrogen.So the consumption that Billy produces polysilicon with silicomethane is much higher.Also need to build the hydrogenchloride tripping device; In addition, the serious corrosion of system, maintenance cost height.Advantage is to utilize the mass-produced cheap silicon tetrachloride of existing producer as raw material.Therefore, embodiment 2 is applicable to existing trichlorosilane thermal-cracking method improvement of manufacturing line, also can be used as the abundant place of silicon tetrachloride production and produces polysilicon.
Compare by embodiment 1 and embodiment 2, embodiment 1 every production 1kg polysilicon will produce the hydrogen of 1.6M3; And embodiment 2 every production 1kg polysilicons will consume the hydrogen of 1.6M3.If a tame factory starts two production lines simultaneously, a strip adoption embodiment 1 produces hydrogen; Another strip adoption embodiment 2 consumes hydrogen, and is the most to one's profit economically.
Claims (5)
1. produce the device of polysilicon with plasma method, it is characterized by the plasma switch room that mainly has raw material silane or halogenated silanes plasma, will carry out isolating tail gas knockout tower and the tail gas hold-up vessel that stores from the isolated gaseous by-product of tail gas knockout tower from plasma switch room tail gas discharged.
2. the device of producing polysilicon with plasma method according to claim 1, it is characterized by and have the refractory ceramics pipe in the plasma switch room, on the refractory ceramics pipe, high-temperature heating equipment is housed, end at high-temperature ceramic has a plurality of feed(raw material)inlets, the other end of high-temperature ceramic inserts in the insulation crucible, heating tungsten rod is housed in the insulation crucible wall, on insulation crucible inwall, has gas flow guiding spiricle, the liquid-state silicon spout that has insulation in the bottom of insulation crucible, the insulation crucible is installed in the switch room shell, on the shell top tail gas relief outlet is housed.
3. the device with plasma method production polysilicon according to claim 2, it is characterized by the high-temperature heating equipment that is contained on the high-temperature ceramic can be hf electric arc well heater or electric tube heater or fuel burning heater.
4. the device of producing polysilicon with plasma method according to claim 1, it is characterized by the tail gas knockout tower and have the separate chamber, in the bottom, separate chamber gaseous by-product be housed and enter pipe, enter the pipe outer wall water cooling heat exchanger is housed, in the bottom, separate chamber packaging vessel is housed, on top, separate chamber filter membranous layer is housed, filter membrane adopts glass fibre or polyvinyl fluoride fibre to make, and filter membrane concussion pump is housed above filter membranous layer.
5. the device of producing polysilicon with plasma method according to claim 1, it is characterized by the tail gas hold-up vessel and have isolating upper tank body and lower tank two portions, sidewall has the wall of opening around lower tank, sealing liquid is housed in wall, the upper tank body lower sidewall is inserted in the wall, in the lower tank bottom inlet pipe, raffinate relief outlet and escape pipe are housed, escape pipe stretches in the tank body, and its top is in stored-gas top.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102502649A (en) * | 2011-09-28 | 2012-06-20 | 陆飞飞 | Heat and mass transfer device with rotational flow boards in process of producing polycrystalline silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102502649A (en) * | 2011-09-28 | 2012-06-20 | 陆飞飞 | Heat and mass transfer device with rotational flow boards in process of producing polycrystalline silicon |
| CN102502649B (en) * | 2011-09-28 | 2014-05-14 | 陆飞飞 | Heat and mass transfer device with rotational flow boards in process of producing polycrystalline silicon |
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Granted publication date: 20080305 |