CN200972862Y - Network type crystal silicon solar battery back field - Google Patents

Network type crystal silicon solar battery back field Download PDF

Info

Publication number
CN200972862Y
CN200972862Y CN 200620157730 CN200620157730U CN200972862Y CN 200972862 Y CN200972862 Y CN 200972862Y CN 200620157730 CN200620157730 CN 200620157730 CN 200620157730 U CN200620157730 U CN 200620157730U CN 200972862 Y CN200972862 Y CN 200972862Y
Authority
CN
China
Prior art keywords
electric field
back surface
silicon solar
surface field
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200620157730
Other languages
Chinese (zh)
Inventor
杨介珍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jetion Solar(China) Co., Ltd.
Original Assignee
JIANGYIN JETION SCIENCE AND TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGYIN JETION SCIENCE AND TECHNOLOGY Co Ltd filed Critical JIANGYIN JETION SCIENCE AND TECHNOLOGY Co Ltd
Priority to CN 200620157730 priority Critical patent/CN200972862Y/en
Application granted granted Critical
Publication of CN200972862Y publication Critical patent/CN200972862Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The utility model discloses a networked back surface field for a crystalline silicon solar battery. The back surface field consists of a plurality of networked smaller back surface field units that are connected with each other, and each smaller back surface field unit is communicated with an adjoining one via a node. The networked back surface field of the utility model consists of a plurality of relatively independent smaller units, and the shrinkage force produced from the sintering of the back surface field is thus decentralized. The utility model can accordingly avoid the influence on the silicon chips and the bending of the battery pieces caused by the different expansion coefficients of the back surface field and the silicon chips, ensure the bending degree of the battery chips is controlled with a reasonable range, reduce the proportion of broken battery pieces, and improve the conformance rate of silicon solar batter pieces.

Description

Network-like crystal silicon solar battery back electric field
Technical field
The utility model relates to a kind of network-like crystal silicon solar battery back electric field.
Background technology
Crystal silicon solar energy battery is the solar cell based on silicon materials.The electrode that is positioned at rear surface of solar cell is a back electrode.The conductive layer that is positioned at rear surface of solar cell overwhelming majority area is a back of the body electric field.
Crystal silicon solar battery back electric field is positioned at rear surface of solar cell, its effect is that the aluminium atom in the electrocondution slurry is penetrated into the diffusion back in the n type zone that the silicon chip back side forms by sintering, making n type silicon transoid is p type silicon, forms aluminium foil and electric field of collecting the cell back surface current of a reflection photon simultaneously at the silicon cell back side.Back of the body electric field is formed by printing, oven dry, sintering by aluminium paste.
As shown in Figure 1, existing crystal silicon solar battery back electric field is an integral body, and greatly about about 45um, the own thickness of silicon chip of making silicon solar cell is greatly about about 200um, and is that have even thinner at the thickness behind the sintering for back electric field aluminum pulp.Because the thermal coefficient of expansion of an aluminium back of the body material and silicon chip is different, has caused silicon solar cell that tangible buckling phenomenon is arranged behind sintering, makes that the fragment rate of silicon solar cell is higher, has reduced the silicon solar cell input-output ratio, has influenced economic benefit.The flexibility of present silicon solar cell is about 2mm.
The technical scheme that solves the battery bending tablet at present has the thickness that reduces to carry on the back electric field, to reduce the active force of back of the body electrical field deformation, reduces the flexibility of battery sheet.Because the minimizing of back of the body electric field thickness makes aluminium descend to the transoid effect in cell back face diffusion layer n type zone, therefore the electrical property of battery sheet is affected, and conversion efficiency has descended about 0.2%.
The utility model content
The utility model technical issues that need to address just are to overcome the defective of prior art, a kind of network-like crystal silicon solar battery back electric field is provided, it has solved the bending tablet of crystalline silicon solar cell problem, on the basis of the electrical property that does not reduce back of the body electric field thickness, assurance battery sheet, reduce the fragment rate of battery sheet, improved the qualification rate of silicon solar cell.
For addressing the above problem, the utility model adopts following technical scheme:
A kind of network-like crystal silicon solar battery back electric field of the utility model, comprise back of the body electric field and back electrode, described back of the body electric field is interconnected by a plurality of junior unit back of the body electric fields forms a network-like integral body, and each junior unit back of the body electric field is all carried on the back electric field by node with other junior unit adjacent with it and is connected.
Junior unit described in the utility model back of the body electric field is can size identical, shape is identical and even distribution.
Junior unit back of the body electric field described in the utility model can be regular hexagon.
The utility model will be carried on the back electric field and be designed to network-like, back of the body electric field is made up of relatively independent one by one junior unit, disperseed to carry on the back the convergent force that produces behind the electric field sinter, thereby avoided to the influence of silicon chip generation and the battery bending tablet phenomenon of generation, having guaranteed that the flexibility of battery sheet is controlled in the reasonable range because back of the body electric field is different with the coefficient of expansion of silicon chip.Reduce the fragment rate of battery sheet, improved the qualification rate of silicon solar cell.
The back of the body electric field of each junior unit described in the utility model all is connected with adjacent junior unit back of the body electric field by node, and making whole back of the body electric field is one integral body on the electrical property meaning, has guaranteed the electrical property of silicon cell.
Thereby the utility model guaranteed the electrical property of battery sheet on the basis of not reducing back of the body electric field thickness, solved battery bending tablet problem, guaranteed that the flexibility of battery sheet is controlled in the reasonable range.Reduce the fragment rate of battery sheet, improved the qualification rate of silicon solar cell.
Description of drawings
Fig. 1 is prior art structure back of the body electric field schematic diagram.
Fig. 2 is a back of the body electric field structure schematic diagram described in the utility model.
Embodiment
As shown in Figure 2, a kind of network-like crystal silicon solar battery back electric field of the utility model comprises back of the body electric field 1 and back electrode 2, described back of the body electric field is interconnected by a plurality of junior unit back of the body electric fields 3 forms a network-like integral body, and each junior unit back of the body electric field is all carried on the back electric field by node 4 with other junior unit adjacent with it and is connected.
Junior unit described in the utility model back of the body electric field can be identical for size, shape is identical and equally distributed multiple shape and size, and as shown in Figure 2, junior unit back of the body electric field described in the utility model is a regular hexagon.
The utility model will be carried on the back electric field and be designed to network-like, back of the body electric field is made up of relatively independent one by one junior unit, disperseed to carry on the back the convergent force that produces behind the electric field sinter, thereby avoided to the influence of silicon chip generation and the battery bending tablet phenomenon of generation, having guaranteed that the flexibility of battery sheet is controlled in the reasonable range because back of the body electric field is different with the coefficient of expansion of silicon chip.Reduce the fragment rate of battery sheet, improved the qualification rate of silicon solar cell.
The back of the body electric field of each junior unit described in the utility model all is connected with adjacent junior unit back of the body electric field by node, and making whole back of the body electric field is one integral body on the electrical property meaning, has guaranteed the electrical property of silicon cell.
Thereby the utility model guaranteed the electrical property of battery sheet on the basis of not reducing back of the body electric field thickness, solved battery bending tablet problem, guaranteed that the flexibility of battery sheet is controlled in the reasonable range.Reduce the fragment rate of battery sheet, improved the qualification rate of silicon solar cell.
The utility model is not limited to above-mentioned preferred forms, and other any identical with the utility model or akin products that anyone draws under enlightenment of the present utility model all drop within the protection range of the present utility model.

Claims (3)

1, a kind of network-like crystal silicon solar battery back electric field, comprise back of the body electric field and back electrode, it is characterized in that: described back of the body electric field is interconnected by a plurality of junior unit back of the body electric fields forms a network-like integral body, and each junior unit back of the body electric field is all carried on the back electric field by node with other junior unit adjacent with it and is connected.
2, network-like crystal silicon solar battery back electric field as claimed in claim 1 is characterized in that: described junior unit back of the body electric field level is identical, shape is identical and even distribution.
3, network-like crystal silicon solar battery back electric field as claimed in claim 1 is characterized in that: described junior unit back of the body electric field is a regular hexagon.
CN 200620157730 2006-11-07 2006-11-07 Network type crystal silicon solar battery back field Expired - Fee Related CN200972862Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200620157730 CN200972862Y (en) 2006-11-07 2006-11-07 Network type crystal silicon solar battery back field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200620157730 CN200972862Y (en) 2006-11-07 2006-11-07 Network type crystal silicon solar battery back field

Publications (1)

Publication Number Publication Date
CN200972862Y true CN200972862Y (en) 2007-11-07

Family

ID=38884116

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200620157730 Expired - Fee Related CN200972862Y (en) 2006-11-07 2006-11-07 Network type crystal silicon solar battery back field

Country Status (1)

Country Link
CN (1) CN200972862Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101359700B (en) * 2008-09-19 2010-06-02 广东工业大学 Solar cell component of aluminum alloy back plate
CN108963004A (en) * 2018-06-14 2018-12-07 东方日升(常州)新能源有限公司 A kind of solar battery positive electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101359700B (en) * 2008-09-19 2010-06-02 广东工业大学 Solar cell component of aluminum alloy back plate
CN108963004A (en) * 2018-06-14 2018-12-07 东方日升(常州)新能源有限公司 A kind of solar battery positive electrode

Similar Documents

Publication Publication Date Title
CN102029776B (en) Screen for printing silicon solar battery electrodes
KR101656118B1 (en) Solar battery, solar battery module, and solar battery system
CN201856441U (en) Screen plate used for printing silicon solar battery electrode
KR20120067332A (en) Solar battery, solar battery module, and solar battery system
WO2021008634A1 (en) Manufacturing method for shingled assembly and shingled assembly
CN102709370B (en) Solar cell and solar cell module
CN102496644A (en) Crystalline silicon photovoltaic assembly
CN207542262U (en) A kind of solar energy laminated batteries based on interconnection architecture
WO2012163908A2 (en) Solar cell module and method for connecting solar cells
CN200972862Y (en) Network type crystal silicon solar battery back field
CN109599454B (en) Back structure of solar cell
CN102800763A (en) Solar cell and method for producing grid line electrode of solar cell
CN205248287U (en) No main grid battery pack
CN110061081B (en) Photovoltaic cell array and photovoltaic module
CN210110811U (en) Novel high-efficient lamination photovoltaic module
CN200972863Y (en) Zigzag crystal silicon solar batter back electrode
CN101702411A (en) Wiring silica-based solar cell structure
CN103595343A (en) Anti-dazzle solar cell assembly and preparation technology thereof
CN107146822B (en) Solar cell capable of being connected at will without broken grid
CN203071084U (en) Sectional back electrode and back field structure
CN210467856U (en) Solar cell for non-shielding component packaging technology
CN202616241U (en) Positive electrode structure of crystalline silicon solar battery
CN209981238U (en) Solar cell module
CN203250750U (en) Solar cell with sectional main grid lines
CN2760771Y (en) Collector plate for fuel cell

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: JETION TECHNOLOGY CO., LTD.

Free format text: FORMER NAME: JIANGYIN JETION SCIENCE AND TECHNOLOGY CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: 214400 No. 1011, Cheng Cheng Road, Jiangyin, Jiangsu

Patentee after: Jetion Solar(China) Co., Ltd.

Address before: 214400 No. 1011, Cheng Cheng Road, Jiangyin, Jiangsu

Patentee before: Jiangyin Jetion Science and Technology Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071107

Termination date: 20151107

EXPY Termination of patent right or utility model