CN200964448Y - Crystalline silicon chip diffusion furnace - Google Patents
Crystalline silicon chip diffusion furnace Download PDFInfo
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- CN200964448Y CN200964448Y CN 200620042768 CN200620042768U CN200964448Y CN 200964448 Y CN200964448 Y CN 200964448Y CN 200620042768 CN200620042768 CN 200620042768 CN 200620042768 U CN200620042768 U CN 200620042768U CN 200964448 Y CN200964448 Y CN 200964448Y
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- carbide blade
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Abstract
The utility model relates to a silicon wafer diffusion stove of crystalline silicon and comprises a quartz-tube cavity, both ends of which are provided with a load-in mouth and a load-out mouth, a gas curtain and a mechanical end cover. The load-in end of the quartz-tube cavity is provided with a load-in drive mechanism that can drive and load in the silicon-carbide blade. A quartz boat loading with crystalline silicon wafer that is waiting for diffusion treatment is arranged on the load-in silicon-carbide blade. In the quartz-tube cavity, the load-in silicon-carbide blade arranges the quartz boat on the load-out silicon-carbide blade that is interveined with the load-in silicon-carbide blade. The load-out silicon-carbide blade is driven by the load-out drive mechanism on the load-out end of the quartz-tube cavity. After the diffusion treatment of the crystalline silicon wafer, the load-out silicon-carbide blade loads out the quartz boat from the other end of the quartz-tube cavity, thereby forming a quartz-tube-type diffusion stove that can install and disassemble the crystalline silicon wafer bidirectionally, and the load-in and the load-out of the silicon wafer can be accomplished in the same direction simultaneously, and finally reaches the beneficial effects of simple structure, improving efficiency, and reducing cost.
Description
Technical field
The utility model relates to the silicon semiconductor processing unit, especially for the diffusion furnace of solar cell crystalline silicon impurities on surface of silicon chip diffusion.
Background technology
In the crystal-silicon solar cell production process, diffusion is the important process process of preparation PN junction, and prior art adopts the high-temperature tubular diffusion furnace to finish this process.At present, known high-temperature tubular diffusion furnace is by forming with the lower section: the silica tube cavity that 1. forms processes spatial one end opening, 2. be wrapped in the outer resistance-type of silica tube cavity and add hot jacket, 3. will be loaded with the silicon carbide blade that the quartz boat of silicon chip is sent into and taken out from silica tube cavity hatch one end, 4. drive the mechanical transfer mechanism of this blade, 5. diffuse source and form the gas pipeline of required processing atmosphere, and, 6. control above-mentioned parts coordinate operation, form and satisfy the Controlling System that processing condition require.In order to intercept exchange gas inside and outside the silica tube, also be provided with gas curtain and mechanical end cap at the opening end of silica tube cavity.
The working routine of prior art is such: resistance-type adds hot jacket and guarantees in high temperature constant temperature district of silica tube stage casing generation.With the surface treated silicon chip quartz boat of packing into, quartz boat is loaded on the silicon carbide blade.Quartz boat is sent into lentamente the flat-temperature zone of silica tube by the silicon carbide blade.Silicon chip slowly is with from diffusion furnace tube by the silicon carbide blade after the high temperature constant temperature district that is full of diffusion impurity element atmosphere finishes diffusion of contaminants.After for some time cooling, silicon chip is unloaded, load again and go up new silicon chip, the processes of beginning next round.In order to reduce the influence of thermal shocking to silicon chip, the long time of process need of silica tube is sent into and taken out to silicon chip, so that rate temperature change does not exceed the requirement of process stipulation.
Because prior art adopts the diffusion furnace of single-ended opening, inevitably the loading, unloading silicon chip is not produce the value-added process of product with being written into the process that, and has wasted a large amount of time, has increased the cost of product.
Summary of the invention
In order to overcome the deficiencies in the prior art, the purpose of this utility model is to provide a kind of crystalline silicon silicon chip diffusion furnace.Utilize the utility model, when carrying silicon chip, send into new silicon chip, can reduce the technological process waste of time.
For solving the problem that prior art exists, the technical scheme that the utility model adopted provides a kind of crystalline silicon silicon chip diffusion furnace, this diffusion furnace comprises: silica tube cavity, its two ends are provided with and are written into and carry out end opening, and the both ends open place is provided with air curtain curtain and mechanical end cap respectively.The outer periphery of silica tube cavity central zone is equipped with resistance-type and adds hot jacket.The center and the two ends of silica tube cavity are connected with gas pipeline, and gas pipeline is connected with diffuse source, and a stable air-flow is provided in the silica tube cavity.Be written into the air curtain curtain of end and the arranged outside of mechanical end cap is written into transmission rig at the silica tube cavity, it is connected with being written into the silicon carbide blade, and drives its silica tube cavity of coming in and going out.Be written on the silicon carbide blade and be placed with quartz boat, load and to remain the crystal silicon chip of DIFFUSION TREATMENT.Under the driving that is written into transmission rig, be written into the quartz boat that the silicon carbide blade will be equipped with crystal silicon chip and send in the silica tube cavity.After being written into the silicon carbide blade quartz boat transmission being put in place, quartz boat passed to carry on the silicon carbide blade, disengage with both by being written into, carrying moving radially relatively of silicon carbide blade.Carrying the silicon carbide blade is connected with the transmission rig that carries that the silica tube cavity carries out the end air curtain curtain and the mechanical end cap outside.After treating that the crystal silicon chip that loads on the quartz boat carries out DIFFUSION TREATMENT, carry the silicon carbide blade under the driving of carrying transmission rig, carry out quartz boat from the other end of silica tube cavity.Above-mentionedly be written into transmission rig and carry transmission rig and be connected, the sequential that is written into and carries out by Controlling System control with Controlling System.
Because the utility model all is provided with air curtain curtain and mechanical end cap at silica tube cavity two ends, is connected with gas pipeline at the center and the two ends of silica tube cavity, gas pipeline is connected with diffuse source, has guaranteed the intravital stable foreign gas atmosphere in silica tube chamber.
The utility model crystalline silicon silicon chip diffusion furnace adopt both ends open, two-way being written into the formula structure, the quartz boat that fills silicon chip is sent into the silica tube cavity and take out this quartz boat by the silica tube cavity and finish respectively by two groups of mechanisms, since quartz boat send into and carry can be simultaneously, equidirectional carrying out, therefore saved time of technological process.Because being one-sided flowing, last next procedure is easier to production management and quality control simultaneously.Reached the beneficial effect that reduces production costs, improves the quality of products.
Description of drawings
Fig. 1 is the structural representation of the utility model crystalline silicon silicon chip diffusion furnace embodiment.
In Fig. 1, the 1st, be written into transmission rig, the 2nd, air curtain curtain and mechanical end cap, the 3rd, resistance-type adds hot jacket, and the 4th, be written into the silicon carbide blade, the 5th, quartz boat, the 6th, carry the silicon carbide blade, the 7th, carry transmission rig, the 8th, gas pipeline, the 9th, silica tube cavity.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present utility model is described in further detail.Fig. 1 is a structural representation of the present utility model, an embodiment of expression crystalline silicon silicon chip diffusion furnace.This device comprises:
From the above description as seen, unlike the prior art be, silica tube cavity of the present utility model is a both ends open, the operation of the quartz boat that fills silicon chip being sent into silica tube and taking out this quartz boat is finished respectively by two groups of mechanisms.The silicon carbide blade of these two groups of mechanisms is come in and gone out by the two ends of quartz pipe respectively, and two groups of blades are realized the transmission of quartz boat in the silica tube flat-temperature zone.When the silicon chip on one group of quartz boat finish diffusion back from an end of quartz pipe when year going out the silicon carbide blade and carry out, the quartz boat that another assembling is loaded with silicon chip to be spread is sent to the quartz pipe flat-temperature zone from the other end of quartz pipe by being written into the silicon carbide blade, because therefore sending into and carrying to finish simultaneously of quartz boat saved the time of technological process.Simultaneously, because last next procedure is folk prescription to flowing, therefore be easier to production management and quality control.
Further working process of the present utility model is described below.
At first, resistance-type adds hot jacket 3 and set up a flat-temperature zone that meets processing requirement in silica tube cavity 9, gas pipeline 8 provides stable air-flow, and chimneying forms a stable air-flow distribution field under the air-flow distribution boundary condition constraint that intake method, air curtain curtain and mechanical end cap 2 limit.When the air temperature and current distribution all meets processing requirement, by being written into silicon carbide blade 4 under the drive that is written into transmission rig 1, the quartz boat 5 that crystal silicon chip is housed is slowly sent into the flat-temperature zone of silica tube cavity 9, and quartz boat 5 is placed on carries on the silicon carbide blade 6.Be written into silicon carbide blade 4 immediately and withdraw from fast, air curtain curtain and mechanical end cap 2 closed quartz tube cavitys 9 be written into end.Gas pipeline 8 feeds required diffuse source, and silicon chip is carried out diffusion of contaminants.At this moment, with following batch of silicon chip to be spread another sky quartz boat of packing into, and place and be written on the silicon carbide blade 4.After the silicon chip in silica tube cavity 9 flat-temperature zones diffusion was finished, gas pipeline 8 stopped the delivery source air-flow, opened the air curtain curtain and the mechanical end cap 2 that carry end, drove and carried silicon carbide blade 6 quartz boat 5 is slowly carried out by carrying transmission rig 7.Meanwhile, silica tube cavity 9 is written into the air curtain curtain and the mechanical end cap 2 of end and opens, and is written into silicon carbide blade 4 silicon chip that next batch is to be spread by quartz boat 5 by being written into transport sector 1 drive, slowly sends into the constant temperature zone of silica tube cavity 9.After carrying quartz boat 5 unloadings on the silicon carbide blade 6, the constant temperature zone of rapid return silica tube cavity 9 is carried the quartz boat 5 that new silicon chip is housed.Being written into silicon carbide blade 4 places quartz boat 5 and withdraws from fast after carrying the silicon carbide blade.The air curtain curtain at silica tube two ends and mechanical end cap 2 seal silica tube cavity two-port.After the flat-temperature zone for the treatment of silica tube reached processing requirement, pipeline 8 was imported diffuse source in the silica tube cavity 9, the diffusing procedure of a beginning new round.
Claims (1)
1, a kind of crystalline silicon silicon chip diffusion furnace, comprise: silica tube cavity, air curtain curtain and mechanical end cap, resistance-type add hot jacket, silicon carbide blade, quartz boat, gas pipeline, diffuse source and Controlling System, it is characterized in that: described silica tube cavity two ends are provided with and are written into and carry out end opening, and the both ends open place is provided with air curtain curtain and mechanical end cap respectively; Described silicon carbide blade comprises and is written into the silicon carbide blade and carries the silicon carbide blade; Be written into the silicon carbide blade and carry the silicon carbide blade staggered in the silica tube cavity, wherein, be written into the transmission rig that is written into that silicon carbide blade and silica tube cavity be written into end and be connected and be driven by it, carry the transmission rig that year goes out that silicon carbide blade and silica tube cavity carry out end and be connected and be driven by it; Describedly be written into transmission rig and carry transmission rig and be connected, the sequential that is written into and carries out by Controlling System control with Controlling System.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620042768 CN200964448Y (en) | 2006-06-13 | 2006-06-13 | Crystalline silicon chip diffusion furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620042768 CN200964448Y (en) | 2006-06-13 | 2006-06-13 | Crystalline silicon chip diffusion furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200964448Y true CN200964448Y (en) | 2007-10-24 |
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ID=38868460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620042768 Expired - Fee Related CN200964448Y (en) | 2006-06-13 | 2006-06-13 | Crystalline silicon chip diffusion furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN200964448Y (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102094247A (en) * | 2010-09-29 | 2011-06-15 | 常州天合光能有限公司 | Two-end gas intake device for phosphorous diffusion furnace tube |
| CN102534803A (en) * | 2012-01-04 | 2012-07-04 | 北京七星华创电子股份有限公司 | Electrical apparatus control system and method for vertical diffusion furnace |
| CN102916084A (en) * | 2012-10-25 | 2013-02-06 | 上海大学 | Continuous passing type diffusion method for silicon solar cell |
| CN102945796A (en) * | 2012-11-29 | 2013-02-27 | 西安电力电子技术研究所 | Diffusion process channel of diffusion type constant-pressure gas carrying impurity source |
| CN103038865A (en) * | 2010-06-04 | 2013-04-10 | 信越化学工业株式会社 | Heat-treatment furnace |
| CN106949737A (en) * | 2016-12-29 | 2017-07-14 | 核工业北京化工冶金研究院 | A kind of high-temperature tubular atmosphere furnace for being used to prepare triuranium octoxide standard substance |
| CN111564401A (en) * | 2020-06-04 | 2020-08-21 | 捷捷半导体有限公司 | Single-peak high-temperature heating furnace for PN junction diffusion or passivation and application |
| CN112071791A (en) * | 2020-08-31 | 2020-12-11 | 赛姆柯(苏州)智能科技有限公司 | Quartz boat conveying and mounting device and using method |
| CN112629995A (en) * | 2020-12-03 | 2021-04-09 | 上海怡星机电设备有限公司 | Biological sample organic tritium carbon oxide oxidation furnace sample preparation system |
| CN117038800A (en) * | 2023-10-08 | 2023-11-10 | 南通大鹏光电有限公司 | Diffusion furnace for manufacturing solar photovoltaic cells |
-
2006
- 2006-06-13 CN CN 200620042768 patent/CN200964448Y/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103038865B (en) * | 2010-06-04 | 2016-01-20 | 信越化学工业株式会社 | Heat-treatment furnace |
| CN103038865A (en) * | 2010-06-04 | 2013-04-10 | 信越化学工业株式会社 | Heat-treatment furnace |
| CN102094247A (en) * | 2010-09-29 | 2011-06-15 | 常州天合光能有限公司 | Two-end gas intake device for phosphorous diffusion furnace tube |
| CN102094247B (en) * | 2010-09-29 | 2013-03-27 | 常州天合光能有限公司 | Two-end gas intake device for phosphorous diffusion furnace tube |
| CN102534803A (en) * | 2012-01-04 | 2012-07-04 | 北京七星华创电子股份有限公司 | Electrical apparatus control system and method for vertical diffusion furnace |
| CN102916084A (en) * | 2012-10-25 | 2013-02-06 | 上海大学 | Continuous passing type diffusion method for silicon solar cell |
| CN102945796B (en) * | 2012-11-29 | 2015-06-03 | 西安电力电子技术研究所 | Diffusion process channel of diffusion type constant-pressure gas carrying impurity source |
| CN102945796A (en) * | 2012-11-29 | 2013-02-27 | 西安电力电子技术研究所 | Diffusion process channel of diffusion type constant-pressure gas carrying impurity source |
| CN106949737A (en) * | 2016-12-29 | 2017-07-14 | 核工业北京化工冶金研究院 | A kind of high-temperature tubular atmosphere furnace for being used to prepare triuranium octoxide standard substance |
| CN111564401A (en) * | 2020-06-04 | 2020-08-21 | 捷捷半导体有限公司 | Single-peak high-temperature heating furnace for PN junction diffusion or passivation and application |
| CN112071791A (en) * | 2020-08-31 | 2020-12-11 | 赛姆柯(苏州)智能科技有限公司 | Quartz boat conveying and mounting device and using method |
| CN112629995A (en) * | 2020-12-03 | 2021-04-09 | 上海怡星机电设备有限公司 | Biological sample organic tritium carbon oxide oxidation furnace sample preparation system |
| CN117038800A (en) * | 2023-10-08 | 2023-11-10 | 南通大鹏光电有限公司 | Diffusion furnace for manufacturing solar photovoltaic cells |
| CN117038800B (en) * | 2023-10-08 | 2023-12-15 | 南通大鹏光电有限公司 | Diffusion furnace for manufacturing solar photovoltaic cells |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071024 Termination date: 20100613 |