CN1996682A - Two-dimensional photon crystal micro resonance cavity - Google Patents
Two-dimensional photon crystal micro resonance cavity Download PDFInfo
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- CN1996682A CN1996682A CNA2006100623968A CN200610062396A CN1996682A CN 1996682 A CN1996682 A CN 1996682A CN A2006100623968 A CNA2006100623968 A CN A2006100623968A CN 200610062396 A CN200610062396 A CN 200610062396A CN 1996682 A CN1996682 A CN 1996682A
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Abstract
This invention relates to one 2D photon transistor micro resonance chamber, which comprises the following structure: the 2D photon transistors composed of high reflection rate medium bar are distributed in turn in the air to form point deficiency and ring one by drawing some medium bars to form one photon transistor compound micro chamber; the ring chamber is inserted with one low reflection medium to make the ring and point chambers resonance at same time through adjusting medium length and reflection rate to get high quality factor and high energy memory status.
Description
(1) technical field
The present invention relates to adopt the micro-resonant cavity of 2 D photon crystal, particularly the integrated two-dimensional photon crystal micro resonance cavity in point defect chamber and ring defect chamber.
(2) background technology
Make high-quality-factor, the microcavity of little mode volume is an important field of research in the integrated optics.It can be used for making such as many passive and active devices based on microcavity such as filter, wavelength division multiplexer, light-emitting diode and lasers.Optical device based on microcavity has special advantage, and for example micro-cavity laser can be controlled the spontaneous radiation of exciting media effectively because volume is little, has high energy conversion efficiency and low threshold value.Micro-cavity structure based on photonic crystal not only has above-mentioned advantage, and can realize high Q value and high radiation enhancer, thereby can realize higher energy conversion efficiency, and people have proposed various photon crystal micro cavity structures for this reason.Granted publication number be CN 1156063C patent disclosure a kind of photon crystal micro cavity structure, as shown in Figure 1, its utilizes introduces a point defect and constitutes microcavity in 2 D photon crystal.This photon crystal micro cavity structure can obtain bigger energy conversion efficiency and bigger Q value, but its energy leakage is still not little, and it is maximum that quality factor q does not reach, and stored energy is limited.Some other document forms point defect by the size that increases or reduce a dielectric rod, and perhaps the position of transfer point defective surrounding medium rod changes the size of point defect, improves the performance of microcavity with this.But these all are based on the microcavity that single or multiple point defects form, and stored energy is all very limited.
The present invention has overcome the shortcoming of above-mentioned photon crystal micro cavity, can obtain higher quality factor, and can make stored energy improve several magnitude.
(3) summary of the invention
Photon crystal micro cavity of the present invention is made up of the point defect chamber of photonic crystal and ring defect chamber.
A kind of basic structure of 2 D photon crystal microcavity is seen Fig. 2, and filled circles is represented the medium post, periodically arranges the medium post and forms photonic crystal.Take out one or several medium post on one side, thereby constitute the point defect chamber.Simultaneously, take out a circle medium post, form the ring defect chamber at another side.The place adds exciting media in the point defect chamber, and the light of certain wavelength can be limited in promptly forming the photonic crystal defect attitude in the chamber.The time that energy is limited in the chamber is long more, and the quality factor in chamber is just high more.When adding an annular chamber on the limit, chamber, the energy that spills from a chamber can be coupled in the annular chamber, at last again from annular chamber is coupled go back to some chambeies, thereby forms the combined type resonant cavity.This is equivalent to the energy that radiation to the outside falls gets back in the point defect again, and this moment, more energy can be limited in the point defect, thereby obtained very high quality factor q.Simultaneously, outer ring cavity plays the effect of stored energy, because its memory space is far longer than the volume in a chamber, and has a plurality of resonance wavelengths, thereby the energy that makes this system to store is far longer than the energy that a single point chamber system can store.By changing the parameter and the structure of system, we just can obtain the photon crystal micro cavity of different Q value.This photon crystal micro cavity can be used for the design of semiconductor micro-cavity lasers and the light source field of full light integrated optical circuit.
Can in annular chamber, add a low-refraction transparent medium, as shown in Figure 2.Change the length or the refractive index size that add medium, be used to adjust the optical length of annular chamber.This can change the position of the resonance wavelength of annular chamber, makes it react on a chamber by coupling, changes the resonance wavelength in some chamber.When resonance wavelength in the annular chamber is identical with resonance wavelength in the some chamber, just can make the coupling of a chamber and annular chamber the strongest.We can also obtain tunable photon crystal micro cavity in this way.
The point defect chamber can be to take out a medium post, also can be to take out single chamber that a plurality of medium posts form, and can also be the single chamber that defective constituted that forms by the diameter that changes one or several dielectric rods.
Belt defect cavity can be capable, cubic go in ring, the triangle ring cavity that go in ring or other any enclosed shape of annulus.
As shown in Figure 2, prism is wherein being represented high refractive index medium, and blank parts is being represented low refractive index dielectric; In order to obtain different results, we also can make prism wherein represent low refractive index dielectric, and high refractive index medium be represented in the clear area conversely.
The operation wavelength of photon crystal micro cavity and its lattice constant are the same order of magnitude, according to these characteristics, by changing structural parameters and selecting different materials, this structure can be suitable for any electromagnetic wave bands, comprises microwave band, millimeter wave band, submillimeter wave wave band, Terahertz (THz) wave band, infrared band, visible light wave range, ultraviolet band, X-band, gamma ray (Gama ray) wave band, cosmic ray wave band etc.
(4) description of drawings
Fig. 1: the independent 2 D photon crystal microcavity that constitutes by point defect
Fig. 2: the schematic cross-section of two-dimensional photon crystal micro resonance cavity
Fig. 3: the resonance frequency of two-dimensional photon crystal micro resonance cavity
Fig. 4: the ideograph of two-dimensional photon crystal micro resonance cavity
Fig. 5: the two-dimensional photon crystal micro resonance cavity schematic diagram in a plurality of somes chambeies
Wherein: 1 constitutes the medium post of photonic crystal, 2 point defects, 3 annular chambers, 4 low refractive index dielectrics
(5) embodiment
The invention will be further described below in conjunction with accompanying drawing.
With reference to Fig. 2,2 D photon crystal is made up of the medium post of periodic arrangement in air.Micro-resonant cavity is made of jointly point defect and annular chamber.Its principle is similar to electric capacity and the inductance in the circuit, when both frequencies of oscillation equate, and whole system generation resonance, this moment, system attenuation was the slowest, therefore can obtain very high quality factor.Add exciting media in point defect, electromagnetic wave is coupled to annular chamber from point defect, and annular chamber forms a loop simultaneously, in the point defect that is coupled back again.If the frequency of oscillation in two chambeies equates that system will reach resonance.Generally speaking, set various parameters after, point defect has only the resonance output of a maximum.But the length of annular chamber is very long, and a plurality of resonance wavelengths are arranged usually.Therefore, we add a low refractive index dielectric in annular chamber, in order to the optical length of change annular chamber, so that the position of change resonance wavelength, the resonance wave strong point that makes one of them move on to point defect, like this, just can get up by resonance in two chambeies.
Therefore the resonance wavelength of photon crystal micro cavity and lattice constant can design the structure and the parameter of photon crystal micro cavity according to required resonance wavelength at the same order of magnitude.For example, the medium post of high index of refraction can be selected silicon (Si) material, and low refractive index dielectric is an air, and its refractive index is respectively 3.4 and 1.In addition, additional agents can be chosen in transparent calcirm-fluoride (GaF in the resonance wavelength scope in the annular chamber
2), its refractive index is 1.25, variable-length.Lattice constant is 1 μ m, and the length of side of square column is 0.4 μ m, and number of arrays is 17 * 19, and then we can obtain the resonance wavelength of micron dimension, as shown in Figure 3.
By calculating the ideograph of photon crystal micro cavity, as shown in Figure 4.When by change inserting the length of medium, we can obtain different frequencies of oscillation, simultaneously can the point of adjustment chamber and the degree of coupling of annular chamber.As shown in Figure 4, this time point chamber and annular chamber coupling are best, and system's generation resonance obtains maximum quality factor.This moment, the quality factor of quality factor when having only a some chamber under the same structure separately of system was bigger, even can reach its twice size.If the number of the medium post around increasing also can obtain bigger quality factor.Stored lot of energy in the annular chamber this moment simultaneously.
As shown in Figure 5, can be used for wavelength-division multiplex system to this photon crystal micro cavity.Photon crystal micro cavity has very high resolution capability.Design the structure and parameter of annular chamber, make it have our two the required resonance wavelengths of working.When directing light into annular chamber, its meeting and the coupling of some chamber, thereby in the inlet point chamber.By designing two different some chambeies, making its resonance wavelength is respectively a kind of in the operation wavelength, so just can import to corresponding light in each resonant cavity.The another side in a chamber separately the lead-in defective make waveguide, just can come out photoconduction; On the contrary, we are incorporated into different light waves in the chamber, and they and annular chamber are coupled, thereby all enter into annular chamber, can extract them by waveguide.So just realized the function of two wavelength light wavelength division multiplexing.When the number that increases the some chamber, during the Adjustment System parameter, we just can realize the optical wavelength-division multiplex of multi-wavelength.
Claims (14)
1. 2 D photon crystal resonant cavity, it is characterized in that: point defect and ring defect by photonic crystal are formed.In 2 D photon crystal, take out a circle dielectric rod and form in the ring defect, reserve several dielectric rods in ring defect one side and form point defect, form combined type 2 D photon crystal microcavity.
2. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: in the ring defect chamber, can insert a transparent medium, to change the stiffness of coupling and the resonance wavelength in ring defect chamber and point defect chamber.
3. by claim 1 and 2 described photonic crystal resonant cavities, it is characterized in that: insert the length of medium and the size of refractive index by adjusting, can change the quality factor of dot system, and can obtain tunable photon crystal micro cavity.
4. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: the point defect chamber can be the single-point defective, also can be single chamber that a plurality of point defects constitute.
5. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: the point defect chamber can be by taking out single chamber that one or a few dielectric rod constitutes, and also can be the single chamber that defective constituted that forms by the diameter that changes one or several dielectric rods.
6. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: the point defect chamber can be by adding one or several dielectric rods generation single chambeies that defective constituted.
7. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: belt defect cavity can be capable, cubic go in ring, the triangle ring cavity that go in ring or other any enclosed shape of annulus.
8. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: the high refractive index medium of forming 2 D photon crystal can be prismatic, also can be cylindrical, also can be the medium post of random cross-sectional shape.
9. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: the low refractive index dielectric of forming 2 D photon crystal can be air, also can be other low refractive index dielectric.
10. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: point is wherein represented high refractive index medium, and blank parts is represented low refractive index dielectric; Also can be, point be wherein represented low refractive index dielectric, and high refractive index medium is represented in the clear area.
11. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: the resonance wavelength in the resonant cavity can be regulated by the size and dimension in point defect chamber and ring defect chamber.
12., it is characterized in that: can change resonance characteristic by the length of change ring cavity and the number in point defect chamber, optimize the result by the described photonic crystal resonant cavity of claim 1.
13. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: according to different requirements, point defect chamber and ring cavity can work in common resonance condition, also can be to have only the point defect chamber to work in resonance condition.
14. by the described photonic crystal resonant cavity of claim 1, it is characterized in that: so-called micro-resonant cavity is meant that its size and operation wavelength are the same order of magnitude; According to different requirements, change structural parameters and select different materials, this structure can be suitable for any electromagnetic wave bands, comprises microwave band, millimeter wave band, submillimeter wave wave band, Terahertz (THz) wave band, infrared band, visible light wave range, ultraviolet band, X-band, gamma ray (Gama ray) wave band, cosmic ray wave band etc.
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| CNA2006100623968A CN1996682A (en) | 2006-08-31 | 2006-08-31 | Two-dimensional photon crystal micro resonance cavity |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353652A (en) * | 2011-07-12 | 2012-02-15 | 中山大学 | Chemical refractive index sensor and design method thereof |
| CN102916238A (en) * | 2012-11-07 | 2013-02-06 | 南开大学 | Terahertz isolator of magnetic surface plasma waveguide |
| CN103905139A (en) * | 2012-12-25 | 2014-07-02 | 深圳大学 | Reconfigurable add-drop multiplexer and signal add drop multiplexing method |
| CN105737975A (en) * | 2016-02-15 | 2016-07-06 | 欧阳征标 | SPP terahertz detector based on metal-insulator-metal (MIM) high sensitivity |
| CN107181037A (en) * | 2017-06-01 | 2017-09-19 | 深圳凌波近场科技有限公司 | Open Fabry Perrault resonator based on surface wave photonic crystal |
| CN109031521A (en) * | 2018-08-27 | 2018-12-18 | 华中科技大学 | A kind of mixing micro-loop waveguide device |
| CN112747821A (en) * | 2020-12-23 | 2021-05-04 | 南京大学 | Terahertz detector integrated with silicon photonic crystal microcavity |
-
2006
- 2006-08-31 CN CNA2006100623968A patent/CN1996682A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353652A (en) * | 2011-07-12 | 2012-02-15 | 中山大学 | Chemical refractive index sensor and design method thereof |
| CN102353652B (en) * | 2011-07-12 | 2013-09-18 | 中山大学 | Chemical refractive index sensor and design method thereof |
| CN102916238A (en) * | 2012-11-07 | 2013-02-06 | 南开大学 | Terahertz isolator of magnetic surface plasma waveguide |
| CN103905139A (en) * | 2012-12-25 | 2014-07-02 | 深圳大学 | Reconfigurable add-drop multiplexer and signal add drop multiplexing method |
| CN103905139B (en) * | 2012-12-25 | 2017-04-26 | 深圳大学 | Reconfigurable add-drop multiplexer and signal add drop multiplexing method |
| CN105737975A (en) * | 2016-02-15 | 2016-07-06 | 欧阳征标 | SPP terahertz detector based on metal-insulator-metal (MIM) high sensitivity |
| CN107181037A (en) * | 2017-06-01 | 2017-09-19 | 深圳凌波近场科技有限公司 | Open Fabry Perrault resonator based on surface wave photonic crystal |
| CN107181037B (en) * | 2017-06-01 | 2020-09-15 | 深圳凌波近场科技有限公司 | Open Fabry Perot resonant cavity based on surface wave photonic crystal |
| CN109031521A (en) * | 2018-08-27 | 2018-12-18 | 华中科技大学 | A kind of mixing micro-loop waveguide device |
| CN109031521B (en) * | 2018-08-27 | 2019-06-18 | 华中科技大学 | A kind of mixing micro-loop waveguide device |
| CN112747821A (en) * | 2020-12-23 | 2021-05-04 | 南京大学 | Terahertz detector integrated with silicon photonic crystal microcavity |
| CN112747821B (en) * | 2020-12-23 | 2022-05-17 | 南京大学 | Terahertz detector integrated with silicon photonic crystal microcavity |
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